SECOND ORDER EFFECTS

IN MOSFET

By
M V AJAY KUMAR
 Content

1. BODY EFFECT

2. SUBTRESHOLD CURRENT

3. CHANNEL LENGTH MODULATION

4. SHORT CHANNEL EFFECTS

Body effect or back gate effect
.body and source are grounded
then vds<vth -depletion region
..increase vs>vb then the depletion region is
more widen
here vb ve, holes are attracted
 HOW TO AVOID BODY EFFECT
HERE WE PLACE SOURCE AND BULK very near
IF THE DISTANCE INCREASES RESISTANCE INCREASE,
AND THE METAL CONNECTION TO THE BULK ,SORCE ALSO CAUSES
RESISTANCE .

HERE SUBSTRATE AND SOURECE IS NOT CHANGED ,WE CAN

AWARE OF CAPACITANCE OF GATE Cox.and ,Vth is operative
 Sub threshold current
VGS=VT - inversion layer forms
Some electrons flow from S to D

Here id not equal to zero .

Sub threshold conduction:

Transistors cant abruptly
turn ON or OFF

Sub threshold leakage is the biggest

source in modern transistors

Sub threshold leakage exponential

with Vgs V V
gs V
t ds

I ds I ds 0e
nv Tv
1 e T



 CHANNEL LENGTH
MODULATION
Reverse-biased p-n junctions form a depletion region
Region between n and p with no carriers
Width of depletion Ld region grows with reverse bias
Leff = L Ld VDD
GND VDD
Shorter Leff gives more current Source Gate Drain
Ids increases with Vds Depletion Region
Width: Ld
Even in saturation

I ds Vgs Vt 1 Vds
2

2 n+
L
n+
Leff
= channel length modulation
p GND bulk Si
coefficient
IN THE DESIGN OF V ds is a
significant part .
Short Channel Effects(SCE)

8
What is short channel device?
A MOSFET device considered to be short when the channel length
is the same order of magnitude as the depletion-layer widths
(xdD, xdS) of the source and drain junction.

Why we go for Short Channel devices?

Choosing a lower power supply voltage is an effective method
However, it leads to the degradation of MOSFET current
driving capability.

Scaling of MOS dimensions is important in order to improve the drivab

ility and to achieve higher performance and higher functional VLSIs

As the channel length L is reduced to increase both the operation

speed and the number of components per chip, the so-called short-
channel effects arise.

9
 CMOS Device Scaling.

=dimensional scaling factor

k=supply voltage scaling factor
ECE 663 10
The short-channel effects are attributed to
two physical phenomena:

1.The limitation imposed on electron drift

characteristics(Id) in the channel.
2.The modification of the threshold
voltage(Vth) due to the
shortening channel length.

11
In particular five different short-channel
effects can be distinguished as fallows.
1.Drain-induced barrier lowering,
Subthreshold conduction and punch
through
2.Surface scattering
3.Velocity saturation
4.Impact ionization
5.Hot electron effect
12
1.DIBL ,Subthreshold conduction and Punch through effect.
In normal case as Vgs<Vth ,then inversion layer is not formed & channel barrier is
larger to overcome with vgs<vth.
In small geometry the channel formation is controlled by Vgs,Vds.

As Vds increases, the channel barrier decreases and it allows to form the
inversion layer or channel which allows the flow of current So it is called Drain
induced barrier lowering (DIBL)

Due to this, even though in less Vgs condition also conduction will happen is
called subthreshold conduction.

If you increase the drain voltage in small geometry devices ,the depletion region
widths Xdb & Xsb will merge and it is called punch through effect.

It is avoided by using thinner oxides, using longer channel devices ,larger

substrate doping.

13
DIBL/Threshold Voltage
Roll-off.

Vth 1/Vds
14
Punch Through.

Electrons can flow from source to drain (no more back to back
junctions).
ID VD2 Drain current no longer controlled by gate
Transistors wont turn off
15
How to reduce DIBL/Vth Roll-off and punch
through.

Local heavy substrate doping for punch-through control

leaving channel lightly doped for threshold control

16
2. Surface scattering.
As Vgs,Vds increases the depletion layer widths also increases
If Ey (Lateral field ) increases then carrier mobility becomes field
dependent due to this collision will happen. This reduces the
mobility of electrons.

3. Velocity saturation.
In short channel devices it reduces the
transcondutance in saturation
region(reciprocal or resistance )
As in low Ey the Vds is in linear with Ey
intensity.
As Ey increase drift velocity decreases and
it approaches to constant value and hence
drain current is limited by velocity
saturation. 17
4.Impact ionization.
Due to high electric field and due to the collision also atoms becomes
ionized.
5.Hot electron effect.
During the last decades transistors dimensions were scaled down, but
not the power supply.

The resulting increase in the electric field strength causes an

increasing energy of the electrons. Some electrons are able to leave
the silicon and tunnel into the gate oxide. Such electrons are called
Hot carriers. Electrons trapped in the oxide change the Vt of the
transistors. This leads to a long term reliability problem. For an
electron to become hot an electric field of 10^4 V/cm is necessary.
This condition is easily met with channel lengths below 1m.
As this accumulation continues the device performance degradation
will happen. This is called hot electron effect.

18
How to reduce Hot electron effect & high electric
field.

Reduced N gradient(Lightly doped drain-LDD) smaller electric

field near drain fewer hot electrons into oxide
n- to avoid large fields and hot electrons, n + to get ohmic contacts
(still need to avoid punch-through)
19
But series resistance along the channel increases.
Thank You.

20