Interfacing Displacement Sensors

Potentiometric Resistive Transducer

Resistive Strain Gage
LVDT(Linear Variable Differential Transformer)
Piezoelectric Transducer
Equivalent Circuit Representation
Signal Conditioning
Accelerometers
Pressure Transducer
Displacement Transducer
1

Potentiometric Resistive Transducer

Simplest and most efficient

Connect slide to moving
object
Three types
Translation
Single turn: Angular
Multi turn: Angular

Translation

Vo = (Rx / Rtotal) Vi

Rx Xi
Linear relationship
between Vi and Xi

Nonlinear

Caused by Load R

Potentiometric Resistive Transducer

Linear if RL =

In practice, RL <

Using Shunt Rm

To remove nonlinearity
Rm = RL

Potentiometric Resistive Transducer

Resolution

Dependent on diameter
of winding wire

Fine wire give better

resolution
20m is close to
practical limit
50 turns / mm

Resistive Strain Gage

Change resistance as a direct result

of the element strained by
displacement
Biomedical application

Metal and semiconductor

gage

Small displacement (<20m)

Require fairly large force to actuate it
Used in force, pressure and
acceleration measurement

Elastic strain gage

Large displacement
Static and Dynamic changes
associated with Limbs, Blood
vessels and chamber of the heart

Strain Gage Principles

Resistance of wire
R

L
A

: resistivity

When wire is stretched

(1 2 )L

Dimensional
change+
R
L
piezzoresistive effect
L / L
: change in Length
D / D
: change in Diameter
(D / D) /( :LPoissons
/ L)
ratio

Resistive Strain Gage

Gage factor

A.k.a Strain sensitivity

G

R / R
/
1 2
L / L
L / L

Most metal
Poissons ratio :
0.3
Gage factor G:
1.6
Dimensional
effect
Semiconductor
50 ~ 70 times G
of metal
Piezoresistive
effect

Unbonded and bonded Strain gages

Unbonded
Normally connected to
Wheatstone bridge

Two lengthened
Two Shortened

Bonded
Resistance-wire type
Foil type
Helical-wire type

Resistance change is
small: 1%

Effect of temperature is
important

Use 4 gage balanced

Wheatstone bridge

Semiconductor Strain Gages

High Gage Factor

Suitable for dynamic
measurements
Used for short-term
measurements of static strain
level

Bonded semiconductor gage

Gage factor: Up to 150

Piezoelectric effect

High temperature sensitivity

Nonlinearity
Diffused Semiconductor gage
Diaphragms on the silicon
Low cost

Mounting strain gages and application

Stress = Strain x Modulus of elasticity

Force, Pressure measure

Packaging
Pressure measurement application
LX1701G

Pressure range
-3.5 ~ 35KPa

Output Voltage
2.5 ~ 12.5 V

Mounting Strain Gage

If applied directly to a strained

object
Measuring small
displacement
Measuring large displacement

Relations:

2 L2 x
s
3lh

l = Distance between P
and P
x = Strain at P

Selection of Strain
Gage

See Figure 9.12

10

Elastic Resistance Strain Gage

Extensively used in
biomedical applications
Consist of

Narrow silicon rubber

tube

0.5mm ID, 2mm OD

30 ~ 250mm long
Filled with mercury or
electrolyte or conductive
paste
Sealed with electrode

Typical Resistance Change

2 ~ 200m / mm
Measure higher
displacement than other
gages
Characteristics
Dead zone
Linear within 1%

As tube stretched

Length: Increase
Diameter: Decrease
Resistance change

R 2L L 2

( )
R0
L0
L0

< 10% of maximal

extension

Nonlinearity of 4%

> 30% of maximal

extension

11

Bridge Circuits

(a) Wheatstone bridge

R1 R2
R
R
) /{(1 1 )(1 2 )}]Vi
R4 Strain
R3 gage R4
R3
(b) One

v [(

Vi x
Vi x
v

( for x 1)
(c) Doubled Output
4(1 x / 2)
4

(d) Quadruple
V x OutputV

2(1 x / 2)

x
( for x 1)
2
i

(e) Zero-centered R

v Vi x

(f) Balanced by Op amp

Good Linearity

vLow
output
Vi x / 2Z

v Vi x / 2

12

Loading Effect on Bridge

Frequently Negligible
Actual output
vo

vi

1
1 (

R2 R3
RR
1 4 ) / Rm
R2 R3 R1 R4

If Rm is infinite

Vi = Vo

If Rm is not infinite

Reduction of output

Ex: Rm = 10Rb
9% of signal loss
due to loading effect

13

Examples of Strain Gages

Simplified circuit

4 Strain Gage

If

Vi = 5V
x = 0.1%
Gain of Amp
G=R4(2R1+R2)/(R2R3)
= 800

Then

Signal fed into

ADC
Va = xViG
= 4V

14

Excitation

Strain gage
Low impedance

120 ~ 350

Voltage drop in wire

leading to bridge input
causes significant
variation in exciting
Output is proportional
to exciting
A small gain error
To solve this problem,
2B35 transducer power
supply is used

Voltage across bridge

terminal is compared with
reference
High gain feedback loop
causes VB = Vref/K

15

Amplifier Circuit

Low cost solution

Single OP amp
Suitable only for small
deviation
Difficult to switch gain
Nonlinearity

Using 2B30/2B31
High Quality
Instrumentation Amp
Three-pole low pass filter
Adjustable transducer
excitation

16

Bridge Circuit

Bridge with Sensitivity,

Balance and
Calibration features

Calibrate bridge directly

Rc is known
Bridge is balanced with
switch open
Close switch

RS

Bridge unbalanced
Measure output voltage

Sensitivity

R R2 R2 RC ( R2 RC )
s

vo
R

Can change overall

sensitivity by changing RS

Adjust Vo to precisely
zero by changing RZ1

17

LVDT (Linear Variable

Differential Transformer)

Electromechanical device that

produces electrical output
proportional to displacement of a
separate movable core

18

Demodulation process in LVDT

Primary coil excitation

Sinusoidal voltage

3 ~ 15Vrms
60 ~ 20000Hz

180 deg phase shift

across null

Requires demodulator
to distinguish direction
of core movement

Phase sensitive
demodulator

19

Semiconductor Bridge
Demodulator

Vo = Vab + Vcd
Advantage
Simple
No carrier reference required
Disadvantage
Nonlinearity

Caused by Diode

To eliminate ripple in output

Low pass filtered

If Excitation frequency :
core displacement
frequency = 10:1
Simple RC circuit

Otherwise
More complex

20

LVDT circuit example

MC1595

Multiplier

Multiplication involves
detection of sign
Performs phase sensitive
demodulator

21

Unique features of LVDT

Electrical transformer with

a separable noncontacting
core
Frictionless measurement
Applied to dynamic
deflection and vibration of
highly elastic materials
Infinite mechanical life
Applied to fatigue life
testing of materials and
structures

Infinite Resolution
Limitation of resolution is
readability of external
device
Null repeatability
Applied to null position
indicator in high gain
closed-loop control
system
Input/Output Isolation
Applied to analog
computing element
without the need for
buffer amplifier

22

Piezoelectric Transducers

Certain solid state materials

Electrically responsive
to mechanical force

Piezoelectric materials

Distortion of Asymmetric
crystal lattice
internal charge
reorientation
relative charges to opposite
outer surface of crystal

Two categories

Self generating type

Applied force generate

electrical charge

Passive circuit type

Applied force causes a

change in electrical
characteristics of materials

Self generating type

Mechanical deformation
generate electrical
signal
Electrical signal causes
mechanical deformation

23

Piezoelectric Transducers

Materials

Natural highly polar crystal

Barium titanate, Ceramic

Lead zirconate titanate
compositions

Most popular

Quartz, Rochelle salt, ammonium

dihydrogen phosphate

Synthesized

Piezoelectric polymer film

Pliant, Flexible, Tough, lightweight
Vinylidene fluoride gives highest
piezoelectric effect

See Figure 9.31, for properties of

piezoelectric materials

Pyroelectricity
Charge produced by the
piezoelectric material due to
temperature rise
Vinylidene-based polymer
gives highest pyroelectric
effect
Poling
Apply strong electric field to
natural ceramics and
synthetic polymer above
certain temperature, then
cooled in electric field
Ceramic and Polymer has
Piezoelectric characteristics

24

Deformation Modes

Thickness expansion mode

Volume expansion mode

Thickness shear mode

25

Equivalent circuit representation

Modeled as parallel plate

capacitor

Total induced charge is

directly proportional to
applied force

Equivalent model
Applied force: F k2 x
Induced charge: q k1 F Kx
Current:
dq Kdx
it

q dF k1 F

Capacitance between
two plate of Area A and
distance d C 0 r A

10G

500p 5p

dt

dt

5M

: dielectric constant of
free space (8.8x10-12 F/m)
: relative dielectric

constant
of insulator (1.0 for
r
air)

26

Low frequency equivalent circuit

From previous page

C

dv0
Kdx v0
it iR

dt
dt
R

In frequency domain
V0 ( j ) ( K C ) j

, RC
X ( j )
j 1

Steady state response to

deflection = 0

For flat amplitude response

within 5%
3.04
f1
Lower:
2
Upper: f 2 f n 5
Step response
To keep 5% decay

> 20T
Using shunt capacitor
across transducer

27

High frequency equivalent circuit

Resonance at high frequency

Typically 20~80KHz
Can be significantly reduced when transducer
is rigidly mounted

Applications
Ultrasonic
Crystal filter for accurate frequency control

Quartz watches
Computer Clocks

28

Signal Conditioning

Voltage Amplification
(a) Unity Gain Amp

Additional cable
capacitance reduces
voltage sensitivity and
increase overall frequency
response
Need tradeoff between
sensitivity and frequency
response

Low output Z
Reducing cable
interference

Temperature < 150C

q R2 R1
(b)
vo
C R1

Charge Amplification
Kx
(c) vo
C

29

Further Processing

Applications of
Piezoelectric transducer
Force
Pressure
Acceleration
Velocity or displacement
can be measured using
additional integrator

Example: Accelerometer
1st stage: Charge Amp
2nd stage: Normalizing

converting system sensitivity

into calibrated level
Ex: 10mV/g

3rd stage: Range selection

Signal to Noise Ratio is

optimized
Ex: 1V = 1, 3, 10g

30

Piezoelectric Accelerometers

Compression Mode
Preloaded with spring to
prevent material from
going into tension
Accelerometer sensitivity:
pC/g

Voltage sensitivity:

Shear (or Bended) Mode

No mounted resonant
frequency effect
Lower transverse sensitivity
Isolate base bending effect
Reduce pyroelectric output

v = q/C

31

Homework #9-1

Displacement sensor 10
.

Ex:
LVDT
control loop actuator

32