Design problems of LASER

CHAPTER NO.4 GERD KEISER

Problem no.4.11
Approximate expression for the
transverse and lateral optical field
L
T
confinement
factors
2 dFabry
D
and
respectively
, Din a

(n12 n22 )1/2
2 D

2
PerotWLasing cavity are
with
2

with

2 W
2 w 2
W
(neff n22 )1/2

(neff n22 T ((n12 n22 )

2

 Here w and d are the width and

thickness, respectively, of the active layer
and n1 and n2 are refractive indices inside
and outside the cavity, respectively.
a) Consider a 1300 nm InGaAsP laser
diode in which the active region is 0.1 m
thich, 1.0 m wide and 250 m long with
refractive indices n1 =3.55 and n2 = 3.20.
What are the transverse and lateral
optical field confinement factors?

b) Of 4.11
Given that the total confinement
factor
T is
L
, what is the gain

threshold if the effictive absorption

coefficient is
= 30/cm and the
facet reflectivities are R1= R2 =
0.31?

Solution of Problem 4.11

Problem 4.12
A GaAs laser emitting at 800 nm has
a 400 micrometer cavity length with
refractive index n = 3.6. If the gain g
the total loss
exceed
t
= throughout the range 750 nm <
< 850nm
How many modes will exist in the
laser?
t

Solution of Problem 4.12

Problem 4.13
A laser emitting at 0=850nm has a
gain spectral width of = 32 nm and
a peak gain of g(0) 50/cm , Plot g()
equation 4.41. If
from
t
=32.2 /cm , show the region
where lasing takes place. If the laser
is 400 micrometer long and n= 3.6,
how many modes will be excited in
the this laser?

Solution of Problem 4.13

Problem 4.14
The derivative of Eq 4.46 assumes
that the refractive index n is
independent of wavelength .
Show that when n dependent on ,
we have
2

2 L(n dn / d )

b) Of 4.14
If the group refractive index (ndn/d) is 4.5 for GaAs at 850 nm,
what is the mode spacing for a 400
micrometer long laser?

Solution of problem 4.14

Problem 4.15

For LASER structure that have strong carrier

confinement, the threshold current density
for stimulated emission Jth can to a good
approximation be related to the lasing
thresold optiocal gain gth by gth = Jth
where is the constant that depends on the
specific device construction. Consider a
GaAs laser with an optical cavity of length
250 micrometer and with 100 micrometer.
At the normal operation temperature , the
gain factor = 21x10^-3 A/cm^3 and the
effective
absorption coefficient

= 10/cm

a) Of 4.15
If the refractive index is 3.6, find the
threshold current density and the
threshold current Ith. Assume the
laser and faces are uncoated and the
current is restricted to the optical
cavity.
b) What is the threshold current if the
laser cavity width is reduced to 10
micrometer.

Solution of problem 4.15

Problem 4.16

Solution of problem 4.16

Problem 4.17

Solution of 4.17

Problem 4.18

Solution of problem 4.18

Problem 4.19

Problem 4.23

Solution of Problem 4.23

Problem 4.24

Solution of problem 4.24

Problem 4.25

Solution of Problem 4.25