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KT(300K) = 26meV
K = 8.617 x 10-5 eV/K
q= 1.6x10-19 C
For Silicon at room temperature ni = 1010 cm-3
Midterm1Ba
58 points
1)
(2pts) For a sample in thermal equilibrium, which answer is the most complete? (circle one)
a) np ni2
dE F
0
dx
c Jn | diff Jn | drift 0
d) a and b
e) a and c
f) a, b and c
b)
4) (10pts) A sample of intrinsic Silicon at 400K is 2cm long and 4cm2 in area. Determine the
resistance.
Assume that at this temperature: ni = 3.59 x 1012 cm-3, Dn = 10 cm2/sec, Dp = 3.64 cm2/sec
T = 400
un = 294, up = 105
Rho = 4463.27
R = 2181.64
450K ni = 2.58E+13
T = 450
Dn = 9.32 Dp = 3.3
un = 239, up = 85
Rho = 747.69
R = 373.84
6) (8pts) A sample of N-type Silicon at room temperature is doped such that Nd = 1016 cm3
. At t=0 an unknown concentration of excess holes is suddenly injected in the material
such that there is no concentration gradient. At t = 2usec, the concentration of excess
holes is 105 cm-3 Assume that all the excess holes recombine at t= infinity. Determine the
concentration of excess holes injected at t=0.
You may assume that: ni = 1010 cm-3,
n = p = 10
-6
n p (0) 105 e 2
6) (8pts) A sample of N-type Silicon at room temperature is doped such that Nd = 1016 cm3
. At t=0 an unknown concentration of excess holes is suddenly injected in the material
such that there is no concentration gradient. At t = 2usec, the concentration of excess
holes is 2x105 cm-3 Assume that all the excess holes recombine at t= infinity. Determine
the concentration of excess holes injected at t=0.
You may assume that: ni = 1010 cm-3,
n = p = 10
-6
Ev
a)
b)
c)
d)
E-field
8) (8pts) Below is the band diagram of a pn junction in thermal equilibrium and at room temperature.
a) Determine the doping concentration on the n side.
b) Label and provide a numerical value for Vbi
Ec
.09eV
EF
.18eV
Ei
Ev
Ec
.1eV
EF
.18eV
Ei
Ev