EE8407

Power Converter Systems

Topic 2

Graduate Course EE8407

Bin Wu

PhD, PEng

Professor

ELCE Department
Ryerson University

Contact Info
Office: ENG328
Tel:
(416) 979-5000 ext: 6484
Email:
bwu@ee.ryerson.ca
http://www.ee.ryerson.ca/~bwu/

Ryerson Campus
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Topic 2

Topic 2

High-Power Semiconductor Devices

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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High-Power Semiconductor Devices

Topic 2

Lecture Topics

Power Diode
SCR Thyristor
Gate Turn-Off Thyristor (GTO)
Integrated Gate Commutated Thyristor (GCT)
Insulated Gate Bipolar Transistor (IGBT)
Switch Series Operation

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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High-Power Semiconductor Devices

Topic 2

Device Rating
V (V)
12000

12000V/1500A
(Mitsubishi)

SCR

27MVA
SCR:
GTO/GCT: 36MVA
6MVA
IGBT:

10000
6500V/600A
(Eupec)

8000
6000

7500V/1650A
(Eupec)

6500V/1500A
(Mitsubishi)

6000V/3000A
(ABB)

6500V/4200A 6000V/6000A
(Mitsubishi)
(ABB)

GTO/GCT

4800V
5000A
(Westcode)

3300V/1200A
(Eupec)

4000
4500V/900A
(Mitsubishi)

2000

2500V/1800A
(Fuji)

1700V/3600A
(Eupec)

IGBT
0

1000

2000

3000

4000

5000

6000 I (A)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Power Diode

Topic 2

4500V/800A press pack and 1700V/1200A module diodes

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Power Diode

Topic 2

Heatsink Assembly
P
P

Heatsink P

A
B

Vd

C
N
N

N
(a) Diode Rectifier

(b) Press pack

(c) Module

Press pack device:

Double sided cooling
Low assembly cost and high power density
Preferred choice for high voltage high power applications
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor

Topic 2

4500V/800A and 4500V/1500A SCRs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor

Switching Characteristics
iG
0.1I GM

I GM

iT

iT

0.9 I D

ID

0.1I D

I rr

vT
VD

0.1VD

iG

t rr

vT

0.1I rr

Qrr

Von

t don tr
ton

toff
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor

Main Specifications
12000V/1500A SCR Thyristor
Maximum
Rating
Switching
Characteristics

V DRM

V RRM

I TAVM

I TRMS

12000V
Turn-on
Time

12000V
Turn-off
Time

1500A

2360A

diT /dt

dv T /dt

Q rr

t on 14 s

t off 1200 s

100 A / s

2000V / s

7000 C

V DRM Repetitive peak off-state voltage

V RRM Repetitive peak reverse voltage

I TAVM Maximum average on-state current

I RRMS Maximum rms on-state current

Qrr

t rr I rr
Reverse recovery Charge
2

Part number FT1500AU-240 (Mitsubishi)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

EE8407

Gate Turn-Off (GTO) Thyristor

Topic 2

4500V/800A and 4500V/1500A GTOs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Topic 2

Symmetrical versus Asymmetrical GTOs

Type

Blocking
Voltage

Asymmetrical GTO

V RRM V DRM

Symmetrical GTO

V RRM V DRM

Example
(6000V GTOs)

VDRM 6000V
VRRM 22V
VDRM 6000V
VRRM 6500V

Applications
For use in voltage
source inverters with
anti-parallel diodes.
For use in current
source inverters.

V DRM - Maximum repetitive peak (forward) off-state voltage

VRRM - Maximum repetitive peak reverse voltage

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Switching Characteristics
vT , iT

iT

vT

0 .9 I D

0.9VD

VD

0.1VD

ID

t don t r
iG

0.1I D

ttail

t doff
tf

diG1 / dt

t
iT

iG

I G1M
0.1I G1M

0.1I G 2 M

diG 2 / dt

vT

IG 2M

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Main Specifications
4500V/4000A Asymmetrical GTO Thyristor
Maximum
Rating
Switching
Characteristics
On-state Voltage

V DRM

V RRM

I TGQM

I TAVM

I TRMS

4500V
Turn-on
Switching

17V
Turn-off
Switching

4000A

1000A

1570A

diT /dt

dv T /dt

di G1 /dt

di G2 /dt

t don 2.5 s

t doff 25.0 s

t r 5 .0 s

t f 3 .0 s

500 A / s

1000V / s

40 A / s

40 A / s

VT ( on state ) 4.4V at I T 4000 A

V DRM - Repetitive peak off-state voltage

V RRM - Repetitive peak reverse voltage

I TGQM - Repetitive controllable on-state current

I TAVM - Maximum average on-state current

I RRMS - Maximum rms on-state current

Part number - 5SGA 40L4501 (ABB)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor (GCT)

6500V/1500A Symmetrical GCT

GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor

GCT Classifications

Type

Anti-parallel
Diode

Blocking
Voltage

Example
(6000V GCT)

Asymmetrical GCT

Excluded

V RRM V DRM

V DRM 6000V
V RRM 22V

Reverse Conducting
GCT

Included

V RRM 0

V DRM 6000V

Symmetrical GCT
(Reverse Blocking)

Not required

V RRM V DRM

V DRM 6000V
V RRM 6500V

Applications
For use in voltage
source inverters with
anti-parallel diodes.
For use in voltage
source inverters.
For use in current
source Inverters.

V DRM - Maximum repetitive peak forward off-state voltage

V RRM - Maximum repetitive peak reverse voltage

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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EE8407

Topic 2

Integrated Gate Commutated Thyristor

Switching Characteristics
vT , iT

iT

vT
0.9VD
VD

iG

0 .9 I D

ID

0.4 I D

0.1VD

tdon t r

t doff
tf

iG

iT

iG

vT

diG1 / dt

vG

diG 2 / dt

vG

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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EE8407

Topic 2

Integrated Gate Commutated Thyristor

Main Specifications
6000V/6000A Asymmetrical GCT
Maximum
Rating
Switching
Characteristics
On-state
Voltage

V DRM

V RRM

I TQRM

I TAVM

I TRMS

6000V
Turn-on
Switching

22V
Turn-off
Switching

6000A

2000A

3100A

diT /dt

dv T /dt

di G1 /dt

di G2 /dt

t don 1.0 s

t doff 3.0 s

t r 2.0 s

t f - N/A

1000 A / s

3000V / s

200 A / s

10,000
A/ s

VT (on state ) 4V at I T 6000 A

V DRM - Repetitive peak off-state voltage

V RRM - Repetitive peak reverse voltage

I TGRM - Repetitive controllable on-state current I TAVM - Maximum average on-state current
I RRMS - Maximum rms on-state current

Part number FGC6000AX120DS (Mitsubishi)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

1700V/1200A and 3300V/1200A IGBT modules

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

IGBT Characteristics
iC

vG
+15V

vCE

E
IC

VGE 5

vGE

90%

VGE 4
VGE 3

+15V

iC

90%

VGE 2
VGE1
0

2V

VCE

Static V-I Characteristics

10%

tdon tr

tdoff

tf

Switching characteristics

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

Main Specifications
3300V/1200A IGBT
Maximum
Rating
Switching
Characteristics
Saturation
Voltage

VCE

IC

I CM

3300V

1200A

2400A

t don

tr

t doff

tf

0.35 s

0.27 s

1.7 s

0.2 s

I CE sat 4.3V at I C 1200 A

VCE - Rated collector-emitter voltage

I C - Rated dc collector current
I CM - Maximum repetitive peak collector current

Part number FZ1200 R33 KF2 (Eupec)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Topic 2

Cause of Voltage Imbalance

Type

v1

S1

Static Voltage
Sharing

Causes of Voltage Imbalance

I lk Device off-state leakage current

T j Junction temperature
t don Turn-on delay time

t doff Turn-off delay time

Device

v2

S2

T j

Dynamic
Voltage Sharing

v3

S3

Qrr Reverse recovery charge of

anti-parallel diode
Junction temperature

t GDon Gate driver turn-on delay time

Gate
Driver

t GDoff Gate driver turn-off delay time

Lwire Wiring inductance between the
the gate driver and the device gate

Differences between series connected devices.

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Topic 2

Equal Voltage Sharing

S1, S2, S3:

v1
v2
v3

S1

Rs
Cs

S2

Rs
Cs

S3

Rv

Rv

GTO, GCT or IGBT

Voltage Sharing:

v1 = v2 = v3

in steady state

and transients
Static Voltage Sharing:

Rs
Cs

Rv

Rv
Dynamic Voltage Sharing:

Rs and Cs
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Active Overvoltage Clamping (AOC)

- Suitable for series IGBTs
- Not applicable to GCTs

Active Overvoltage
Clamping
Vm

Gate Signal
Conditioning

Amp

vin

S1

AOC
Vm

Vm

vCE1
iC

Gate Signal
Conditioning

vCE 2

td

vCE1

Rg

Amp

S2
Rg

vCE 2

Assumption:
S1 is turned off earlier than S2
t

VCE1 is clamed to Vm due to

active clamping.

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Summary
Item

GTO

IGCT

IGBT

Maximum switch power

(Device V I )
Active di/dt and dv/dt control
Active short circuit protection
Turn-off (dv/dt) snubber
Turn-on (di/dt) snubber
Parallel connection
Switching speed

36MVA

36MVA

6MVA

No
No
Required
Required
No
Slow

No
No
Not required
Required
No
Moderate

Behavior after destruction

Shorted

Shorted

Low
High
Complex,
separate

Low
Low
Complex,
integrated

Yes
Yes
No required
No required
Yes
Fast
Open
in most cases
High
Low
Simple,
compact

High

High

Low

On-state losses
Switching losses
Gate Driver
Gate Driver Power
Consumption

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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