CHAPTER 1

OVERVIEW OF POWER
ELECTRONIC DEVICES

CLO2: Apply knowledge of basic principle operations of power

electronic converters
using suitable circuit diagrams.
ET502
POWER
ELECTRONICS

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Prepared by: Pn Asiah binti Ab Wahid

 Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Latch Up
Turn Of
Characteristic

Others
Devices

TRIAC

GTO-SCR

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

Introduction
Equivalent
Circuit
IV
Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Advantages &
Disadvantages

IGBT

Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor
Switching
Example

Introduction
Physical
Structure
IV
Characteristic
Curve
Turn On & Turn
Of
GTO vs SCR
Turn On
Characteristic
Turn Of
Characteristic

E-MOSFET

SCR
BJT

Introduction
Physical
Structure
Regenerative
Action
IV
Characteristic
Curve
Methods to
turn on
Methods to
turn of

DIAC &
Photo
Diode
Photo
Thyristor
& Photo
Transistor
Optocoupl
er &PUT

Front Page

SCR

Introduction

Menu

SCR
SCR

Introduction
Physical Structure
Regenerative
Action
IV Characteristic
Curve
Methods to turn
on
Descriptio
Methods
to turn
of
ns:

Symbol

Physical
Structure

SCR is a latching device; once it is turned on, or "fired," it remains

SCR
on (i.e., the current will continue to flow) until the driving voltage
between anode and cathode is removed.
Silicone It conducts current in only direction. It is a unidirectional thyristor.
Controlled The two outer junctions are forward biased by the voltage as shown,
Rectifier but the inner junction is reverse biased.
As a result, a small current in the gate electrode can turn on a
current between anode and cathode.

Chapter 1: PE

SCR

Physical Structure

Menu

SCR
SCR

Anode

Introduction
Physical Structure
Regenerative
Action
IV Characteristic
Curve
Methods to turn
on
Descriptio
Methods
to turn
of
ns:

The
collector of
Q2 drives
the base of
Q1, while
the
collector of
Q1 feeds
back to the
base of Q2.

P
Gate

2 BJT
(1 PNP & 1
NPN)

N
P

Cathode

Chapter 1: PE

SCR

Regenerative Action

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SCR
SCR

Introduction
Physical Structure
Regenerative
Action
IV Characteristic
Curve
Methods to turn on
Methods to turn of

Anod
e

0<tt
1

Ie1
Vbe1

Descriptio
ns:

Gat
eI
g

Vg

Ic1

At t =
t1

Ib1 I
c2

Ib2

Vbe2

Ie2

Cathod
e

Chapter 1: PE

SCR

When 0<tt1

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Vg=0V,
therefore Vb2 =Vg=0V ;
while Ib2 =0 and Ic2 Ic1.
Ib for Q1 , Ib1=Ic2=Ic1 where it is too
small to switch on Q1.
Therefore, both transistor Q1 and Q2 are
in of condition. So that, is produce high
impedance between collector and emitter
for both Q1 and Q2 make it open circuit.
Chapter 1: PE

SCR

When t = t1(SW is closed) Menu

The pulse Vg is triggered to the gate terminal where the value of Vg
is sufficient to switch on Q2 (Vbe2=Vg).
Whereas Ic2 of Q2 will rise to achieve the suitable value to swtich on
Q1(Ib1=Ic2).
When Q1 is on, Ic1 will rise and caused Ib2 rise too. Therefore, the
rising of Ib2 will rising the value of Ic2 at Q2.
In all, this process produce a situation of regeneration process where
it increase the value of collector current of each transistor Q1 & Q2;
at the same time the resistance between anode & cathode is very
small that makes anode current is equal likely as cathode current. So
that, SCR is on.
Triggering pulse, Vg is no longer required in the circuit. The circuit will
remain on until it is turned of by a reduction in the collector
current
Chapter
1: PE

SCR

I-V Characteristic Curve

Details of IV
Curve
SCR
SCR

Introduction
Physical Structure
Regenerative
Action
Reverse
IV Characteristic
Breakover
Curve
Methods to turn on voltage
Methods to turn of

Descriptio
ns:

VRBO

I
Forward volt-drop IL (Latching current)- The minimum anode
current required to maintain SCR in the onstate immediately after SCR is turned on
and the gate signal is removed.

(conducting)

IL
IH

Gate triggered

IH (Holding current)- the minimum anode

current required to maintain SCR in the onstate.

Reverse
Leakage
current

Menu

VFBO VFBO (Forward Breakover Voltage) - When

Forward
Leakage Forward the gate of SCR is open, then the minimum
current breakover amount of forward voltage which is required
for SCR to start conducting heavily.
voltage
VRBO (Reverse Breakover Voltage)- When
Cathode Terminal of SCR is kept positive
with respect to anode, then the maximum
reverse voltage at which SCR remains in
OFF state

Chapter 1: PE

SCR

Details of I-V Characteristic

Menu
Curve

In the normal OFF state (No gate signal), the leakage current
remains very small.
When gate terminal is triggerred, the forward voltage from
cathode to anode is increased until the breakdown point (VFBO) is
reached.
Here, the centre junction breaks down, SCR begins to conduct
heavily. The drop across SCR becomes very low.
Breakdown of the center junction can be achieved at speeds
approaching a microsecond by applying an appropriate signal to
the gate lead, while holding the anode voltage constant.
After breakdown, the voltage across the device is so low that
the current through it from cathode to anode is essentially
determined by the load it is feeding.
SCR continue operating although the gate signal is removed
Chapter
unless anode current is reduced below holding current,
Ih. 1: PE

SCR

SCR Turn-on Characteristic (Method)

Menu
SCR
SCR

Introduction
Physical Structure
Regenerative
Action
IV Characteristic
Curve
Methods to turn on
Methods to turn of

Descriptio
ns:

Chapter 1: PE

SCR

SCR 3 main conditions..

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Chapter 1: PE

SCR

Positive Gate Signal

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In the normal "of" state, the device restricts current

to the leakage current.
When the gate-to-cathode voltage exceeds a certain
threshold, the device turns "on" and conducts current.
The device will remain in the "on" state even after
gate current is removed so long as current through
the device remains above the holding current.
Once current falls below the holding current for an
appropriate period of time, the device will switch
"of".
If the gate is pulsed and the current through the
device is below the holding current, the device will
remain in the "of" state.
Chapter 1: PE

SCR

Exceed VFBO

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SCRs can also be triggered by increasing the

forward voltage beyond their rated
breakdown voltage; VFBO but this does not
rapidly switch the entire device into
conduction and so may be harmful so this
mode of operation is also usually avoided.
Also, the actual breakdown voltage may be
substantially higher than the rated breakdown
voltage, so the exact trigger point will vary
from device to device.
Chapter 1: PE

SCR

Turn-on Characteristic

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2 BJT
Connection
If an SCR's gate is disconnected, it may be latched by breakover voltage or
by exceeding the critical rate of voltage rise between anode and cathode.
However, because the gate terminal connects directly to the base of the
lower transistor, it may be used as an alternative means to latch the SCR.
By applying a small +ve voltage between gate and cathode, the lower
transistor will be forced on by the resulting base current, which will cause the
upper transistor to conduct, which then supplies the lower transistor's base
with current so that it no longer needs to be activated by a gate voltage.
The necessary gate current to initiate latch-up is very much lower than the
current through the SCR from cathode to anode.
Chapter 1: PE

SCR

Turn-of Characteristic (Method)

Menu

SCR
SCR

Introduction
Physical Structure
Regenerative
Action
IV Characteristic
Curve
Methods to turn on
Methods to turn of

Descriptio
ns:

Chapter 1: PE

SCR

Serial Switch

Menu

SW

SW connected in series
with SCR
Switch in Series Connection:
When SW is opened, the anode current, I decrease
a
below holding current, Ih.

Therefore, SCR is of.

Chapter 1: PE

SCR

Parallel Switch

Menu

SW

SW connected in parallel
with SCR
Switch in parallel connection:

When SW is closed, anode & cathode terminal is shorted.

Therefore, SCR is of.

Chapter 1: PE

SCR

Natural Commutation

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SCR of when the current, Ia goes to natural zero

If the input is AC, the thyristor current goes through a

natural zero, and a reverse voltage appears across the
thyristor. The device is then automatically turned of due
to the natural behavior of the source voltage. Chapter 1: PE

SCR

Try this

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SCR
SCR

Introduction
Physical Structure
Regenerative
Action
IV Characteristic
Curve
Methods to turn on
Methods to turn of

Descriptio
ns:

Draw and label the symbol of SCR

State the name of three terminals of SCR.

Explain the regenerative action of SCR

Define the meaning of forward breakover voltage, reverse

Chapter 1: PE

GTO - SCR

Introduction

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GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

Symbol

GTO-SCR

Physical
Structure

GTO-SCR is like normal SCR but it can be turned of using very large
negative gate current (1/5 Ia)

Gate Turn
Of SCR it involves shunting all of the upper transistor's collector current past
It is also known

by the name of
GateControlled

Switch, or GCS.

the lower transistor's base.

fully controllable switches which can be turned on and of by the GATE
terminal.
The main applications are in variable speed motor drives, high power
inverters and traction
Chapter 1: PE

GTO - SCR

Physical Structure
GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

Menu

Anode

PN
P

P
P

NPN >>
PNP

the only diferences being details of

construction designed to grant the NPN
transistor a greater than the PNP.

This allows a smaller gate current (forward

or reverse) to use a greater degree of
control over conduction from cathode to
anode, with the PNP transistor's latched
state being more dependent upon the NPN's
than vice versa.

GTO-SCR
N
Gate
share the
NP
same
P
NN
equivalent
schematic
with SCR.
Cathode
(Two
transistors
connected:inCE forward current gain amplification factor
a positive-

Chapter 1: PE

GTO - SCR

IV Characteristic Curve

Menu

GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

Behave like normal thyristor, but can be turned of using gate signal
Chapter 1: PE

GTO - SCR

Turn on & Turn of

GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

Turn On

Menu
Turn Of

Positive gate triggered

Negative gate triggered

Efective and more stable

switching time to ON
(1s) more than SCR

Efective and more stable

switching time to OFF
(1s) more than SCR (530s)

Triggered current is
higher than SCR

Turn of current is much

higher than the triggered
current itself and
triggered current of SCR

Easier to switch on than

SCR (no triggered circuit)

Easier to switch of than

SCR

Chapter 1: PE

GTO - SCR

GTO vs SCR

Menu

GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

Thyristor
(1600 V,
350 A)

GTO
(1600 V,
350 A)

Characteris
tic

Description

VT ON

On state
voltage drop

ton,Igon

Turn on time,
8 s,200 mA
gate current

2 s,2 A

tof

Turn of time

15 s

1.5 V

150 s

3.4 V

Chapter 1: PE

GTO - SCR

Turn-on Characteristic
GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

Menu

"positive current" pulse between the

gate and cathode terminals.
As the gate-cathode behaves like PN
junction, there will be some relatively
small voltage between the terminals.
The turn on phenomenon in GTO is
however, not as reliable as an SCR
and small positive gate current must
be maintained even after turn on to
improve reliability.
Chapter 1: PE

More about Turn-on

Characteristic

GTO - SCR

Menu

GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

During turn on, the device has a maximum dI/dt rating

limiting the rise of current. This is to allow the entire bulk of
the device to reach turn on before full current is reached.
If this rating is exceeded, the area of the device nearest the
gate contacts will overheat and melt from over current.
The rate of dI/dt is usually controlled by adding a saturable
reactor (turn-on snubber), although turn-on dI/dt is a less
serious constraint with GTO thyristors than it is with normal
thyristors, because of the way the GTO is constructed from
many small thyristor cells in parallel. Reset of the saturable
reactor usually places a minimum of time requirement on
GTO based circuits.
Snubber is to shape the turn on and turn of currents to
prevent device destruction.
Chapter 1: PE

GTO - SCR

Turn-of Characteristic

Menu

GTO-SCR
GTO-SCR

Introduction

Physical Structure
IV Characteristic
Curve
Turn On & Turn Of

GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

a "negative voltage" pulse between

the gate and cathode terminals.
Some of the forward current (about
one-third to one-fifth) is "stolen" and
used to induce a cathode-gate voltage
which in turn induces the forward
current to fall and the GTO will switch
of (transitioning to the 'blocking'
state.)
Chapter 1: PE

More about Turn-of

Characteristic
GTO-SCR
GTO-SCR

Introduction
Physical Structure
IV Characteristic
Curve
Turn On & Turn Of
GTO vs SCR
Turn On
Characteristic
Descriptio
Turn
Of
Characteristic
ns:

GTO - SCR

Menu

During turn of, the forward voltage of the device

must be limited until the current tails of. The
limit is usually around 20% of the forward
blocking voltage rating.
If the voltage rises too fast at turn of, not all of
the device will turn of and the GTO will fail, often
explosively, due to the high voltage and current
focused on a small portion of the device.
Substantial snubber circuits are added around
the device to limit the rise of voltage at turn of.
Resetting the snubber circuit usually places a
minimum on time requirement on GTO based
circuits.
Chapter 1: PE

TRIAC

Introduction

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio&
Advantages
Disadvantages
ns: formal name
The

is bidirectional
triode thyristor.
This results in a

bidirectional
electronic switch

which can
conduct current
in either

direction when it
Physical
is triggered
Structure
(turned
on) and

MT
2

n
n

Symbol

Physical
Structure

n
MT
1

Three terminals: MT1, MT2 & Gate

The structure of a TRIAC is considered as a DIAC with an additional gate contact
provided to enable control of the device.
TRIAC is normally made of silicon. Using a silicon fabrication process further
enables the devices to be produced very cheaply.
TRIAC structure consists of four n-type areas as shown and two p-type areas.

Chapter 1: PE

TRIAC

Equivalent Circuit

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio&
Advantages
Disadvantages
ns:

Equivalent TRIAC

two SCRs joined in inverse parallel (paralleled but with the polarity reversed)
and with their gates connected together.

When the voltage on the MT2 is positive with regard to MT1 and a positive gate
voltage is applied, the left SCR conducts. When the voltage is reversed and a
negative voltage is applied to the gate, the right SCR conducts.

This is provided that there is sufficient voltage across the device to enable a
minimum holding current to flow.
Chapter 1: PE

TRIAC

V-I Characteristic Curve

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio&
Advantages
Disadvantages
ns:

Minimum holding current, Ih, must be maintained in order to keep a triac

conducting
Chapter 1: PE

TRIAC

Turn-on Characteristic

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio&
Advantages
Disadvantages
ns:

TRIAC can be triggered by either a positive or a

negative voltage being applied to its gate terminal.
TRIAC is a very convenient switch for AC circuits,
allowing the control of very large power flows with
milliampere-scale control currents.
In addition, applying a trigger pulse at a controllable
point in an AC cycle allows one to control the
percentage of current that flows through the TRIAC to
the load (phase control).

Chapter 1: PE

TRIAC

Turn-on Characteristic

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio& TRIACs
Advantages
Disadvantages
ns:

DIAC & TRIAC connected together

do not fire symmetrically as a result of slight differences between the

two halves of the device. This results in harmonics being generated and the
less symmetrical the TRIAC fires, the greater the level of harmonics produced.
To help in overcoming this problem, a DIAC is often placed in series with the
gate. This device helps make the switching more even for both halves of the
cycle.
Since the DIAC prevents any gate current flowing until the trigger voltage has
reached a certain voltage in either direction, this makes the firing point of the
TRIAC more even in both directions.
Chapter 1: PE

TRIAC

Turn-of Characteristic

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio&
Advantages
Disadvantages
ns:

the current through it drops

below a certain threshold value,
the holding current, such as at
the end of a half-cycle of
alternating current (AC) mains
power.

Chapter 1: PE

Advantages &
Disadvantages

TRIAC

Menu

TRIAC
TRIAC

Introduction
Equivalent Circuit
IV Characteristic
Curve
Turn On
Characteristic
Turn Of
Characteristic
Descriptio&
Advantages
Disadvantages
ns:

Chapter 1: PE

BJT

Introduction

Menu

BJT
BJT
Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor Switching
Power transistor
Example

Descriptio
of NPN types are
ns: to
easy
manufacture
and cheaper.

Used in highvoltage and high

current
application.
In transistor,
base current is
efectively the
input current
and collector
current is output

Collector

NPN

Base

I
c

Emitter

3 terminals:
Collector (C)
Base (B)
Emitter (E)

PNP

N
P
N

Collector

Base

P
N
P
E

I
c

Emitter
Chapter 1: PE

BJT

V-I Characteristic Curve

BJT
BJT
Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor Switching
Example

Descriptio
ns:

Saturation
region
(Power
Switch): With
both junctions
forwardbiased, a BJT
is in saturation
mode. IB & IC
are very high
but VCE0.
This mode
corresponds to
Cutof
a
logicalregion:
"on", In cutof (below the line
IB a
=0)
, both emitter-base & baseor
closed
collector junctions reverse biased.
switch.
There is very little current (Ic) flow,
which corresponds to a logical "of", or
an open switch.

Mode
Cutof

Menu

Active region
(Amplifier): The
emitter-base junction is
forward biased and the
base-collector junction is
reverse biased. Most
bipolar transistors are
designed to aford the
greatest commonemitter current gain, f
in forward-active mode.
If this is the case, the
collector-emitter current
is approximately
proportional to the base
current, but many times
larger,
for small CBJ
base
EBJ
current variations.

Reverse

Reverse

Active

Forward

Reverse

Saturati
on

Forward

Forward

Chapter 1: PE

Turn-on & turn-of

Characteristic
BJT
BJT
Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor Switching
Example

Descriptio
ns:

BJT

Menu

Large base current will cause the transistor work in saturation region
with small saturation voltage VCE.
When the control or base is reduce to 0, the transistor is turn-of and its
operation is in the cut-of region. A small leakage current I CEO flow in
the collector circuit when the transistor is of.
If the base current is more than IBS , VCE is almost zero. This shows that
collector current at saturation remain substantially constant even if
base current is increased.
Under saturation condition VBE>VCE, means base emitter junction is
forward bias. Ie VCB is ve. Under saturation condition CJB is also FB. So
at SC, BEJ &CBJ are FB.
If the base current is more than IBS , VCE is almost zero. This shows that
collector current at saturation remain substantially constant even if base
current is increased.
Under saturation condition VBE>VCE, means base emitter junction is
forward bias. Ie VCB is ve. Under saturation condition CJB is also FB. So at
SC, BEJ &CBJ are FB.
Chapter 1: PE

BJT

Turn-on Characteristic

Menu

BJT
BJT
Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor Switching
Example

Descriptio
ns:

The base-emitter diode (forward) acts as a

switch.When v1>0.7 it lets the electrons flow
toward collector, so we can control our output
current (Ic) with the input current (Ib) by
using transistors.
Chapter 1: PE

BJT

BJT as a SWITCH

Menu

BJT
BJT
Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor Switching
Example

Descriptio
ns:

Transistor operation as switch means that transistor operates either in

saturation region or in cut-of region

Chapter 1: PE

Transistor Switching
Example

BJT

Menu

BJT
BJT
Introduction
VI Characteristic
Curve
Turn on & Of
Characteristic
Turn On
Characteristic
BJT as a Switch
Transistor Switching
Example

Descriptio
ns:

When VBE is less than 0.7V the transistor is of and the lamp does not light.
When VBE is greater than 0.7V the transistor is on and the lamp lights.

Chapter 1: PE

E-MOSFET

Introduction
E-MOSFET
E-MOSFET

Menu
has broken channel line to
indicate this normally OFF
condition.

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

substrate
connection
brought out
separately
from the
source.

Descriptio
ns:

the arrow points to this

inversion layer, which
acts like an N-channel
when the device is
conducting.

Enhancement
MOSFET

Pchannel

the source
and
substrate
internally
connected,

NChapter 1: PE
channel

E-MOSFET

I-V Characteristic Curve

The characteristic curves

have almost vertical and
almost horizontal parts.

E-MOSFET
E-MOSFET

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

The almost vertical

components of the curves
correspond to the ohmic
region, and the horizontal
components correspond to
the constant current region.

Descriptio
ns: zero value of
For
VGS, the EMOSFET is OFF
because there is
no conducting
channel
between source
It has an
& drain.
insulated gate is
indicated by the
gate not making
direct contact
with the channel.

Menu

Thus E-MOSFET can be

operated in either of these
regions i.e. it canbe used
as a variable-voltage
resistor or as a constant
current source.

Drain Characteristics of N
E-MOSFET
channel
The lowest
curve is the VGST curve. When VGS < VGST, ID 0A

When VGS > VGST, the device turns- on and the drain current ID is
Chapter 1: PE
controlled by the gate voltage.

E-MOSFET

I-V Characteristic Curve

Menu

E-MOSFET
E-MOSFET

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

Descriptio
ns:
The

manufacturer
sometimes
indicates the
gate-source
threshold
voltage VGST at
which the
drain current
ID attains
some defined

The current IDSS at VGS <=0 is very small, being of the order of a
few nano-amperes.
When the VGS is made positive, the drain current ID increases slowly
at first, and then much more rapidly with an increase in V GS.
A current ID (0N, corresponding approximately to the maximum value
given on the drain characteristics and the values of VGS required to
give this current VGs QN are also usually given on the manufacturers
data sheet.
The equation for the transfer characteristic of E-MOSFETs is given
as: ID=K(VGS-VGST)2
Chapter 1: PE

E-MOSFET

Turn-on Characteristic

Menu

E-MOSFET
E-MOSFET

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

Descriptio
ns:

Symb
ol

Interpretation
of Symbol

Function
as two switches

Chapter 1: PE

E-MOSFET

Turn-on Characteristic

Menu

E-MOSFET
E-MOSFET

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

Descriptio

ns:V
For
GS
exceeding the
threshold
voltage VGST,
an N-type
inversion layer,

connecting the
source to
drain, is
created.

If the source is made positive with respect to the drain,

there is a direct path for current flow across the
junction between the p region & the drain n- region,
which becomes forward-biased under this direction.
Therefore the device functions like a power diode in
this direction. This integral antiparallel diode is an
advantageous feature for most switching applications
of the power MOSFET.
Chapter 1: PE

E-MOSFET

Turn-on & Of Characteristic

Menu
E-MOSFET
E-MOSFET

Introduction
IV Characteristic

Curve
Turn on
Characteristic
Turn on & Of
Characteristic

Descriptio
ns:

OFF State: If there is no input on the gate signal, no

current can flow from drain to source, because the
junction between of n- drain region and p island is
reverse biased. The only current that flow is reverse
leakage current of this junction which is negligiblely
small.
ON state: If a positive voltage (higher than some threshold value) is applied
to the gate, the electric field so created pulls electrons from the n+ zone
immediately near the gate.

Chapter 1: PE

E-MOSFET

Turn-on & 0f CharacteristicMenu

E-MOSFET
E-MOSFET

Introduction
IV Characteristic
Curve
Turn on
Characteristic
Turn on & Of
Characteristic

Descriptio
ns:

In this way n channel is created linking the source n+

region & the drain n- region. This n channel now
provides the path for flow of current from drain to
source. Above the threshold, the cross sectional are of
the channel will increase with increasing VGS.
For a given value of VGS however, there is a limit to the
max current that can flow through the channel. If VDS is
continue increase to increase current, there will be
initially be a steep increase in current. Afterwards, the
current will reach saturation value current reach IDS
valuethe
which
is limited
byis VGS.
Once
saturation
value
reached, further increase of VDS
will only cause increased voltage drop across the device &
increased power dissipation in it without increase the current.

In practice; VGS= +12V to 15V will be adequate to fully turn

on the switch.
Chapter 1: PE

IGBT

Introduction
IGBT
IGBT
Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
IGBTs
Turn
Characteristic
applications :

PWM servo
three-phase
drives
UPS
SMPS
power circuits of
Optimized
IGBT
high
is
available
for
switch
repetition
both
rates.low
conduction loss
and low

Physical
switching
loss.

Menu
Collector

Symbol

Physical
Structure

IGBT is a minority-carrier device with high input impedance and

large bipolar current-carrying capability. Many designers view IGBT as
a device with MOS input characteristics and bipolar output
characteristic that is a voltage-controlled bipolar device.
To make use of the advantages of both Power MOSFET and BJT, the
IGBT has been introduced. Its a functional integration of Power
MOSFET and BJT devices in monolithic form. It combines the best
attributes of both to achieve optimal device characteristics.
IGBT improves dynamic performance and efficiency and
reduced
Chapter
1: PE the

IGBT

Why IGBT?
IGBT
IGBT
Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
Characteristic

Menu

The IGBT is suitable for scaling up the blocking voltage

capability. In case of Power MOSFET, the on-resistance
increases sharply with the breakdown voltage due to an
increase in the resistively and thickness of the drift region
required to support the high operating voltage.
For this reason, the development of high current Power
MOSFET with high-blocking voltage rating is normally
avoided. In contrast, for the IGBT, the drift region resistance
is drastically reduced by the high concentration of injected
minority carriers during on-state current conduction.
The forward drop from the drift region becomes dependent
upon its thickness and independent of its original resistivity.

Chapter 1: PE

IGBT

V-I Characteristic Curve

Menu

IGBT
IGBT
Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
Characteristic

It has a family of curves, each of which corresponds to a diferent gate-toemitter voltage (VGE).

The collector current (IC) is measured as a function of collector-emitter

voltage (VCE) with the gate-emitter voltage (VGE) constant.
Chapter 1: PE

IGBT

How IGBT works?

IGBT
IGBT
Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
IGBT
Characteristic

contains of
MOSFET,
JFET, NPN
and NPN
PNP and
The
transistors.
PNP
transistors
represent the
parasitic
thyristor which
constitutes a
regenerative
feedback loop.

The collector of NPN

is connected to the
base of PNP through
the JFET.
B
C

Menu

The collector of PNP

is connected to the
base of NPN

JFET represents the

constriction of current between
any two neighbouring IGBT
cells. It supports most of the
voltage and allows the MOSFET
to be a low voltage type and

RB represents the shorting

of the base-emitter of NPN
to ensure that the thyristor
does not latch up, which
will lead to the IGBT
latchup.

Chapter 1: PE

IGBT

Switching Characteristic
IGBT
IGBT
Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
Characteristic

Menu

The switching characteristics of an IGBT are very

much similar to that of a Power MOSFET. The major
diference from Power MOSFET is that it has a
tailing collector current due to the stored charge in
the N- drift region. The tail current increases the
turnof loss and requires an increase in the dead
time between the conduction of two devices in a
half-bridge circuit.
Collector
J1
J2
J3

Chapter 1: PE

IGBT

Turn-on Characteristic
IGBT
IGBT

Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
Characteristic

Menu

Operation Modes
Forward-Blocking Mode
When a positive voltage is applied across the
collector-to-emitter terminal with gate shorted to
emitter, the device enters into forward
blocking mode with junctions J1 and J3 are
forward-biased and junction J2 is reverse-biased.
A depletion layer extends on both-sides of
junction J2 partly
into P-base and N-drift region.
Collector
J1
J2
J3

Chapter 1: PE

IGBT

Conduction Mode
IGBT
IGBT

Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
onduction
Mode
ns:Of
Turn
Characteristic

To transfer IGBT to forward conducting

state, the gate-emitter shorting must
be removed & apply a +ve voltage of
sufficient level to invert the Si below
gate
the Pabase
region.
This in
forms
conducting

Menu
Collector
o
+
o+

J1

J2 e
channel
J3 e
Electrons
are emitter
transported
from N+
connects N+
to N-drift
emitter
region. to N- drift. This flow of
electrons into N- drift lowers the
potential of N-drift region whereby
This
P+ collector/ N-drift becomes
In forward-biased condition, a high density of minority carrier
mechanism
forward-biased.
holes is injected into N-drift from P+ collector.
in rise in
conductivity When the injected carrier concentration is very much larger
is referred to the background concentration, a condition defined as a
plasma of holes builds up in N- drift region. This plasma of
as the
conductivity holes attracts electrons from emitter contact to maintain
local charge neutrality. In this manner, approximately equal
modulation
This
excess
electron and
drastically
excess
concentrations
of hole
holesconcentrations
and electrons are
gathered in
of the NChapter 1: PE
the conductivity of N- drift region.
N- drift region.
drift region. enhance

IGBT

Latch up

Menu

IGBT
IGBT

Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
Latch-up
Characteristic

B
C
E

Collector
J1

J2
J3

During on-state, paths for current flow in an IGBT. The holes are
injected into N-drift region from P+ collector form two paths. Part of the
holes disappear by recombination with electrons came from MOSFET
channel.
Other part of holes are attracted to the vicinity of the inversion layer by
the negative charge of electrons, travel laterally through the P-body
layer and develops a voltage drop in the ohmic resistance of the body.
This voltage tends to forward bias the N+P junction and if it is large
enough, substantial injection of electrons from emitter into the body
region will occur and the parasitic NPN transistor will be turned-on.
If this happens, both NPN and PNP parasitic transistors will be turned-on
and hence the thyristor composed of these two transistors will latch on
Chapter 1: PE
and the latchup condition of IGBT will have occurred.

IGBT

Turn-of Characteristic

Menu

IGBT
IGBT
Introduction
Why IGBT?
IV Characteristic
Curve
How IGBT Works?
Switching
Characteristic
Turn On
Characteristic
Conduction Mode
Descriptio
Latch Up
ns:Of
Turn
Characteristic

If latchup is not terminated quickly, IGBT will be destroyed by

the excessive power dissipation. IGBT has a max allowable
peak drain current (ICM) that can flow without latchup. this
current level in the datasheet. Beyond this current level, a
large enough lateral voltage drop will activate thyristor and
the latchup of IGBT.
Once in latchup, the gate has no control on collector current
and the only way to turn-of the IGBT is by forced
commutation of the current, exactly same as for a
conventional thyristor.

Chapter 1: PE

Other Devices

DIAC & Photo Diode

Other
Other Devices
Devices

DIAC & Photo

Diode
Photo Thyristor &
Photo Transistor
Optocoupler &PUT

DIAC

Menu

PHOTO DIODE

Main
terminal 1

Descriptio
ns:

Main
terminal 2

Chapter 1: PE

Other Devices

Photo Thyristor & Photo

Transistor
Other
Other Devices
Devices

DIAC & Photo

Diode
Photo Thyristor &
Photo Transistor
Optocoupler &PUT

Menu

PHOTO THYRISTOR

PHOTO TRANSISTOR

Terminals: Emitter, base, and

collector

Descriptio
ns:

Terminals: Cathode,
anode & Gate
Chapter 1: PE

Other Devices

Optocoupler & PUT

Other
Other Devices
Devices

DIAC & Photo

Diode
Photo Thyristor &
Photo Transistor
Optocoupler &PUT

Menu

OPTOCOUPLER

PROGRAMMABLE UNIJUNCTION
TRANSISTOR (PUT)

Terminals: Emitter, base1 & base2

Descriptio
ns:

LED + Photo diode

Chapter 1: PE