STT-RAM

STT-RAM is an emerging non-volatile

technology that is a potential universal

memory that could replace SRAM in
processor caches.
STT-RAM is an evolution in magnetic
storage from hard disk drive to solid state
semiconductor memory.

Need for new memory technology

Critical applications now-a-days are more data-centric

and less compute-centric.

Memory performance becoming a bottleneck due to
increasing amount of data.
Compute speed can still be increased but processor speed
is limited by memory speed.
Clock speed cannot be increased above certain limit to
avoid heating.
Need of an alternate memory technology which can
replace existing technologies in memory hierarchy.

COMPARISION WITH OTHER RAMS

STT-RAM is an emerging non volatile memory
technology that combines
The capacity and cost benefits of DRAM
The fast read and write performance of SRAM
The non volatility of FLASH with essentially
unlimited endurance

Revolution in memory
Researchers proposed STT-RAM (Spin Transfer Torque Random

Access Memory).
It can be used as Universal Memory.
It has potential to replace all memories in existing memory hierarchy.
It has characteristics of every level in memory hierarchy viz.
high performance
high density
high capacity
high endurance
low power consumption
non-volatility
future scalability

Architecture and design of

STT-RAM cell
MTJ (Magnetic Tunnel Junction) is the basic storage element of the cell.
MTJ structure:
Two ferromagnetic layers viz. Hard layer and Free layer
Hard layer has fixed magnetic orientation.
Free layer has variable magnetic orientation.
Data is stored as relative magnetic orientation of these two layers.

Physics:
Two physical phenomenon describe the functionality of STT-RAM.
Tunneling magnetoresistance (TMR) effect for reading and the spin-transfer

torque (STT) effect for writing.

TMR enables magnetic state of the Free layer to be sensed and hence the stored
information to be read.
STT enables electrons/current flowing through MTJ to change the relative
orientation

MTJ-building block of sttram

MTJs have no intrinsic leakage current

because the free layer needs no currentto

maintain it state.
Applying a small fixed voltage to the MTJ
results in a high or low current depending on
whether the free layer is currently parallel or
anti-parallel to the magnetic orientation of
hard layer.

OVERVIEW OF STT-RAM
It makesuse of the modern spintronics

technology that exploits the quantum propensity

of the electronsto spin as well as making use of
their charge state .
STT-RAM is a form of MRAMthat uses spin
transfer torque to reorient the free layer by
passing a large, directional writecurrent through
the MTJ.
The switching process is regulated by a thermally
controlled stochastic process, which means that
the free layer could change state at any time.

Working of STT-RAM cell

The relative magnetic orientation is changed by passing

spin-polarized current through MTJ.

Current transfers spin angular momentum between the
magnetic layers.
This results in torque on magnetization of Free layer
changing its relative magnetic orientation w.r.t. that of
Hard layer.

Rather than using a magnetic field to write

zeros and ones as with conentional chips ,an

STT-RAM chip records digital data by passing a
current through the magnet and then over the
film structure.
As the current moves through the magnet,it
becomes polarized
Transferring the current through a pre layer
create TORQUE
The TORQUE changes the direction of
polarized current and the orientation of pre
layers.

COMPARISION WITH mRAM

Read operation
A small voltage (< 0.5V) is applied across

the bit cell to sense the data stored in the

MTJ, which is compared to the average of
two reference MTJ cells
One of the reference cells is in the parallel
(low resistance) state while the other is in
the anti-parallel (high resistance) state.

Write operation

Uses spin-polarized current instead of

magnetic field to switch magnetization of

storage layer
Has low power consumption and excellent
scalability
Writing 1 and 0

Challenges faced
Two main challenges:Stochastic nature of MTJ:

1.

Transient behavior is non-deterministic due to random thermal kicks

acting on its magnetization during switching activity.
Thermal stability factor (D) is the measure of its stable transient behavior.
D = (Hk*Ms^2*Ar*t^2)/(kB*T)
Where, Ms = Saturation magnetization, Ar = Area of MTJ, Hk =
Uniaxial anisotropy, t = thickness of free layer

High write energy:

2.

Intrinsic/switching/write current density (Jc0) can give the measure of

write energy.

To maintain D with the high Ms, the switching current

increases.
For reliable memory operation, low switching current with high
value of D is required.

Current Trends
Clinton W. Smullen, et al demonstrated a scheme to reduce write

energy of STT-RAM by relaxing its non-volatility for using it as fast

and energy-efficient cache. Reduction in planar area of MTJ caused
reduction in retention time and hence non volatility.
In another paper, Clinton W. Smullen, et al, proposed a scheme to
reduce write energy by tuning the saturation magnetization Ms and
thickness of Free layer t.
In the same paper, Clinton W. Smullen, et al, proposed another
approach wherein the difference between write energy for write 0 and
write 1 is considered and the minimum of two is used write STTRAM cell. 7% average reduction in total write energy is achieved.

Future prospects
Promising candidate for replacing SRAM, DRAM and

MRAM in cache and main memory.

Excellent scalability feature allows the researchers to
evaluate its performance in multicore processing systems
and parallel high performance computing systems.
Compact and simple cell structure provide higher
packaging density thus decreasing the cost per unit.
Possible to implement multi-level cell structure using MTJ
further increasing the cells per unit area.
High endurance implies increased lifetime of memory.

Future prospects
Standalone STT-RAM and Embedded STT-RAM

product roadmap:
Mohamad T. Krounbi, S. Watts, D. Apalkov, X. Tang, K. MoonV. Nikitin , A. Ong, V. Nikitin, E. Chen, Status and
Challenges for Non-Volatile Spin-Transfer Torque RAM (STT-RAM) ppt, International Symposium on Advanced Gate
Stack TechnologyAlbany, NYSeptember 29 October 1 , 2010.

applications
One of the first applications for stand-alone

STT-RAM will be as a mobile RAM replacement.

STT-RAM has other key initial applications as
an embedded memory. STT-RAM is easily
embedded in standard CMOS processes.

Smart phone with conventional

memory

Smart phone with stt-ram memory

Leading developers and researchers

of STT-RAM
Grandis Inc. is the key inventor and pioneer in STT-RAM

technology.
Hitachi and Tohoku University demonstrated a 32-Mbit
STT-RAM in June 2009.
In 2011, Qualcomm presented a 1 Mbit Embedded STTMRAM, manufactured in TSMC's 45 nm LP technology
at the Symposium on VLSI Circuits.

Conclusion
STT-RAM is capable of being called as Universal

Memory.
maintaining a balance between its two parameters viz.
thermal stability and write current density is a prime
challenge before it can be used as a Universal Memory.
Novel techniques have been proposed and are being
invented which could help improve its performance and
energy efficiency.