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of poly-crystalline diamond
synthesized by MWP-CVD
By
G.Bharadwaj S.G.K.S
Kakatiya Institute of Technology and Science
Warangal
Telangana
Under
Supervision of
Awadesh Kr Mallik
Bio-Ceramics and Coatings Division
CSIR-Central Glass and Ceramic Research Institute
Kolkata
OUTLINE
Introduction
Experimental
Results
Conclusion
INTRODUCTION
Natural
Basic
Diamond
Facts
Formation
Need
INTRODUCTION
Artificial Diamond : Diamond synthesized in
1). HPHT
2). CVD
CVD : Refers to deposition of thin films on so
CVD SCHEMATIC
PRE- FABRICATION
Selection of substrate
Operation parameters
SAMPLE PREPARATION
SAMPLE FABRICATION
DT1800
Process Parameters
Substrate Temperature: 7509000C
H2:CH4: 1:99
Pressure : 110-125 Torr
Microwave Frequency : 915
MHz
EXPERIMENT
Sample
fabrication
Chemical Mechanical Polishing
Characterization
1. Scanning Electron
Microscopy(SEM)
2. Laser Profilometer(CSI)
3. Raman Spectroscopy
EXPERIMENT OBJECTIVE
Chemical
mechanical
Planarization
Degree of Differential Polishing
Comparative study of Quality of
Diamond
Comparative study of Surface
Roughness
CMP
What
is CMP ?
Planarization: Refers to Planarization
is
a
process
that
involves
smoothening
and
flattening
of
surface
and
thereby
removing
surface topologies
Principle : Mechanical Abrasion and
Chemical etching
Description
Advantages
CMP
CHEMO-MECHANICAL
POLISHING
CETR-CP4
Process
Parameters
Wafer Pressure : 0.5-2.0 psi
Platen velocity : 100-150
rev/min
Wafer Velocity (Rotary) : Idle
Slurry/Water :1/8
Slurry flow rate : 10 mL/min
LASER PROFILOMETER
Objective
: Provides quantitative
maps of surface topology in a 3D
view. It gives information about
surface roughness of exposed area
Principle : Diffuse reflection, Phase
change
Description
Advantages
LASER PROFILOMETER
Bruker
Inc
Processing parameters
Objective lens : 10x
Area :
0.866*0.6(0.529mm2)
SCANNING ELECTRON
MICROSCOPY
Supra
35VP,Carl Zeiss
Objective : To understand the
microstructure of given
Conducting Sample
Principle : Analogous to Cathode
ray tube
Advantages
RAMAN SPECTROMETER
Make
RESULTS
Raman Data
SEM Data
CSI Data
RAMAN DATA
Quality
of Diamond :
Id/Ig+Id
I : Intensity of
d
Diamond peak
I : Intensity of
g
Graphite peak
Stress:
Uniaxial =0.347()
Bi-axial = 0.528()
*b : Before CMP
*a: After CMP
Sampl
e
Stress(b Q(b*)
*)
Stress(a Q(a*)
*)
0.9661
59.52
%
62.7%
0.8953
56.65
%
62.7%
RAMAN DATA
CSI DATA
Drastic
decrease
in
Ra
Differential
Polishing observed
Sample
Ra(b*)
Ra(a*)
0.528m
0.265m
0.535m
0.453m
3
4
SEM DATA
CONCLUSIONS
CMP
ACKNOWLEDGEMENTS
Sincere thanks
To
Mr. Awadesh Kr Mallik
Dr. Vamsi Krishna Balla
And
All the staff of BCCD division
Especially
Mr. Nandadulal Dandapat
REFERENCES