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Ronel G. Jandi
Instructor
TRANSISTOR
The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of
electricity
The term Junction is because there are two pn junctions
There are two configurations for this device
NPN Transistor
Transistor Currents
IE = I B + I C
PNP Transistor
Transistor Operation
BJT CONFIGURATIONS
Common Base
Input
Input
IC
IE
Common Collector
Forward
Current Gain
IE
1
IB
Forward Current
Gain
Relationship of and
IE = I B + I C
Multiply with 1/ Ic
[IE = IB + IC] 1/ Ic
IE I B
IC
IC I C
IC
= / ( +
1)
1 / = 1 + 1/
Example No 1. Determine DC, IE, and DC for a transistor
where IB = 50A and IC = 3.65mA.
. Example 2) Determine IB, IC, IE, VBE, VCE, and VCB in the
circuit. The transistor has a DC = 150
VCC
. DC = 100
Ic = PD(max)/VCE
VCE = PD(max)/IC
. DC = 100
VBB
VCC
Derating PDmax)
Example 6) A certain transistor has PD(max) of 1W at 25C.
The derating factor is 5mw/C . What is the PD(max) at a
temperature of 70C ?
0V
IC = 0
RC
RC
RB
IB = 0
a) Cutoff
+VCC
+VCC
+VBB
+VCC
IC(sat)
RC
RB
IB
B) Saturation
Example 7)
a) For the transistor, what is VCE when VIN = 0V?
b) What minimum value of IB is required to saturate this transistor if DC is
200? Neglect VCE(sat).
c) Calculate the maximum value of RB when VIN = 5V.
VCC
+ 10V
RC
VIN
RB
DC Operating point
DC Load Line
Linear Operation
Waveform Distortion
RB
47k
VBB
10V
VCC
20V
BASE BIAS
+VCC
RC
RB
RC
VCC
RB
RC
560
RB
100k
I2 + I B
R1
RC
IC
IB
I2
R2
RE
IE
Simplified Voltage-Divider
+VCC
+VCC
R1
RC
R1
IIN
A
R2
a)Unloaded
+
VBE -
+
R2
RIN(base)
b) Loaded
VIN
-
IE
RE
RIN(base) = DCRE
R1
+VCC
R1
RC
A
R2
RE
R2
RIN(base)
10k
R1
RC
5.6k
R2
RE
1k
560
The End
Those who are enamored of practice without science are
like a pilot who goes into a ship without rudder or compass
and never has any certainty where he is going.
Practice should always be based upon a sound knowledge
of theory.
Leonardo da Vinci (1452 - 1519)
Italian artist, engineer, and inventor.
Notebooks