INDUSTRIAL

ELECTRONICS

WELDING
The process of joining metals usually by heat or
sometimes with pressure and sometimes with
an intermediate or filter material with high
melting point.

I. WELDING SYSTEMS
1. BASIC INTERVALS
a.
b.
c.
d.
e.

Squeeze Interval
Weld Interval
Hold Interval
Release
Standby Interval

2. POPULAR WELDING
PROCESSES
a. Arc Welding
TIG Welding
MIG Welding
b. Solid State
Welding
c. Resistance
Welding
Spot Welding
Seam Welding
Upset Welding

BASIC INTERVALS

a. SQUEEZE INTERVAL
Welding electrode comes forward and engage
the metal pressing against the surface.
Typical squeeze time is 1 sec.

BASIC INTERVALS

b. WELD INTERVAL
Welding transformer is energized, current
flows and creates a weld.
On heat subinterval is a condition when the
current is on.
On cool subinterval is when the current is
of
Typical duration (2-10 sec).

BASIC INTERVALS

c. HOLD INTERVAL
Weld interval is finished.
Electrode pressure is maintained.

d. RELEASE
Welding electrode is retracted.

e. STANDBY INTERVAL
The time after release interval to the next
start sequence.

POPULAR WELDING PROCESSES

a. ARC WELDING
It is simply the use of electric arc to provide
heat.
Process of utilizing the concentrated heat of an
electric arc to join metal by fusion of the parent
metal and the addition of metal to joint usually
provided by a consumable electrode.

Either direct or alternating current may be

used for the arc, depending upon the
material to be welded and the electrode used.

POPULAR WELDING PROCESSES

a.ARC WELDING
Various forms of arc
welding includes
electroslag welding,
plasma arc welding,
gas metal arc
welding, submerged
arc welding, gas
tungsten arc
welding, etc.

ARC WELDING MACHINE

POPULAR WELDING PROCESSES

TIG WELDING
Gas
tungsten
arc
welding
An
arc
is
formed
between
a
nonconsumable
tungsten
electrode and the metal
being welded.
Some of its benefits
includes superior quality
welds, precise control of
heat, free of splatter and
low distortion.

GTAW Weld Area

POPULAR WELDING PROCESSES

MIG WELDING
Gas metal arc welding
Commonly
used
high
deposition rate welding
process
Referred
to
as
a
semiautomatic
welding
process
Benefits
include
all
position capability, long
weld can be made without
start
and
stops
and
minimal post weld cleaning
is required.

GAS METAL ARC

WELDING

GMAW WELD AREA

1) Direction of Travel
2) Contact Tube
3) Electrode
4) Shielding Gas
5) Molten Weld Metal
6) Solidified Weld Metal
7) Workpiece

POPULAR WELDING PROCESSES

b.SOLID STATE WELDING

Group of welding processes
which produces coalescence at
temperatures
essentially
below the melting point of the
base materials being joined,
without the addition of brazing
filler metal.
Pressure may or may not be
used.

POPULAR WELDING PROCESSES

b.SOLID STATE WELDING

Sometimes called
solid state bonding
processes.
Includes cold
welding, difusion
welding, explosion
welding, forge
welding, friction
welding, hot
pressure welding,
roll welding, and
ultrasonic welding

SOLID STATE
WELDING MACHINES

POPULAR WELDING PROCESSES

c. RESISTANCE WELDING

Uses the application of

electric
current
and
mechanical
pressure
to
create a weld between two
pieces of metal.
Weld electrodes conduct the
electric current to the two
pieces of metal as they are
forged together.
Some of its benefits include
high
speed,
easily
automated, suitable for high
rate production and it is
economical.

RESISTANCE
WELDING

POPULAR WELDING PROCESSES

SPOT WELDING
Resistance welding in which the weld is
produced by the heat obtained at the
interface between the work pieces.

SPOT WELDS

RESISTANCE SPOT WELDING

POPULAR WELDING PROCESSES

SEAM WELDING
Spots are very closed to each other that they
overlap and make a continuous seam weld.

SEAM
WELDING
MACHINE

POPULAR WELDING PROCESSES

UPSET WELDING
Resistance welding process applicable to
small welding areas.
UPSET WELDING
MACHINE

UPSET MOTION

REVIEW
QUESTIONS

1. The
time
between
the
first
application of electrode force and the
first application of welding current.
a.
b.
c.
d.

Squeeze time
Weld time
Hold time
Of period

2. Process
wherein
coalescence
is
produced by the heat obtained from
the resistance of the workpiece to the
flow of low voltage, high density
electric current in a circuit.
a.
b.
c.
d.

Forge welding
Resistance welding
Ultrasonic welding
LBW

3. Time when electrode force is applied

but the current is shut of.
a.
b.
c.
d.

Of period
Hold time
Squeeze time
Weld time

4. The time when electrode force is

released.
a.
b.
c.
d.

Hold time
Squeeze time
Of period
Weld time

5. The fusion of the grain structure of

materials.
a.
b.
c.
d.

Forge
Weld
Recombination
Coalescence

6. Time when current is applied to the

workpiece.
a.
b.
c.
d.

Weld time
Squeeze time
Hold time
Of period

7. Heat in resistance welding is

produced by the following factors
except one
a.
b.
c.
d.

Time duration
Current
Electrical resistance
Pressure applied

8. Resistance
component
workpieces.
a.
b.
c.
d.

welding
machine
that
holds
the

Electrical circuit
Electrode system
Mechanical system
None of the above

9. Resistance
spot
welding
(RSW)
machine type that is controlled by
hydraulic cylinders.
a.
b.
c.
d.

Miniature welders
Rocker-arm welder
Press-type welder
Portable spot welder

10.Machine component made up of the

transformer
and
the
current
regulator.
a.
b.
c.
d.

Control system
Electrical system
Electrode system
Mechanical system

11.Welder machine with capacities up

to 500 kVa
a.
b.
c.
d.

Miniature welders
Rocker-arm welder
Press-type welder
Portable spot welder

12.Regulates the time of the welding

cycle.
a.
b.
c.
d.

Electrode
Current regulator
Control system
Mechanical system

13.Welding machine
workpieces.
a.
b.
c.
d.

Miniature welders
Rocker-arm welder
Press-type welder
Portable spot welder

use

for

large

14.Another name for hammer welding

a.
b.
c.
d.

Fusion welding
RW
Maul welding
Forge welding

15.Referred to as a localized coalescence

a.
b.
c.
d.

Weld
Mold
Cast
Metal

16.Part of the welding electric circuit

that is used to produce high
amperage current at low voltages.
a.
b.
c.
d.

Capacitor
Voltage regulator
Transformer
The secondary circuit

17.The overlapped RSW.

a.
b.
c.
d.

RSEW (Resistance Seam Welding)

ORSW
OSW
USW

18.Spot welding are most commonly

used in
a.
b.
c.
d.

Ships
Automobiles
Airplanes
Rafts

19.The last step in welding time control.

a.
b.
c.
d.

Of period
Weld time
Squeeze time
Hold time

20.The relative maximum workpiece

thickness where spot welding can be
used.
a.
b.
c.
d.

0.5 in
1 in.
1.5 in.
0.25 in.

21.Resistance welding was developed

by this man in and revolutionized
the welding industry.
a.
b.
c.
d.

Isaac Asimov
Karel Capek
Thomas Seebeck
Elihu Thomson

22.The year when resistance welding

was discovered.
a.
b.
c.
d.

1935
1798
1886
1945

23.It is the fusion or growing of the

materials being together.
a.
b.
c.
d.

Coalition
Coincidence
Coalescense
Mixing

24.Arc welding requires a voltage

around _______.
a.
b.
c.
d.

60 100 V
150 -200 V
400 440 V
1000 5000 V

25.During arc welding, the current

is in the range of _______.
a.
b.
c.
d.

15A
5 50 A
50 400 A
500 4000 A

26.The body structure of the car is

welded by ______.
a.
b.
c.
d.

Gas welding
Spot welding
Induction welding
Arc welding

27.For inspection of welding defects in

thick metals, which of the following
ray is used to photograph thick
metals objects?
a.
b.
c.
d.

Gamma rays
Cosmic rays
Infrared rays
Ultraviolet rays

II. INDUSTRIAL ELECTRONIC DEVICES

1. ELECTRON TUBES
a. Thyratron
b. Ignitron

2. THYRISTOR
a. Silicon Controlled Rectifier (SCR)
b. Triac

II. INDUSTRIAL ELECTRONIC DEVICES

3. BREAK-OVER DEVICES
a.
b.
c.
d.
e.
f.
g.
h.

Shockley Diode
Silicon Unilateral Switch
DIAC
Silicon Bilateral Switch (SBS)
Silicon Controlled Switch (SCS)
Gate Turn Of Switch
Unijunction Transistor (UJT)
Programmable Unijunction Transistor (PUT)

ELECTRON TUBES

a. THYRATRON
A gas filled triode
used as an electrode
switch.

Giant GE Hydrogen Thyratron,

used in pulse radars

ELECTRON TUBES

b. IGNITRON
Electron tube containing
mercury and function as a
rectifier.
IGNITRON
1. Anode
2. Cathode
3. Ignitor
4. Mercury
5. Ceramic Insulators
6. Cooling Fluid

THYRISTOR
Solid state devices used as a switch in
applications that handles larger voltage and
currents.
Have at least four semiconductor layers.
Regenerative switching devices and cannot
operate in linear manner.

THYRISTOR

SILICON CONTROLLED RECTIFIER (SCR)

Most commonly used thyristor.
Three-terminal device used to control large
currents to a load.
Four layer semiconductor device usually
used in relay controls, time delay circuits,
regulated power supply and phase controls.

SCR Basic Construction and Equivalent Circuit

SCHEMATIC
SYMBOL

SCR

SCR CHARACTERISTIC CURVE

THYRISTOR

VBR - BREAK-OVER VOLTAGE

Voltage through which SCR starts to
conduct when gate current is zero.

IH - HOLDING CURRENT
Anode current between the conducting
state and non-conducting state.

SCR GATE CHARACTERISTICS

SCR is fired by a short burst of current
into the gate typically 0.1 50 mA.

SCRS CONDUCTION ANGLE (CA)

The angular degrees of an AC cycle during
which the SCR is turned on.

SCRS FIRING DELAY ANGLE (FDA)

Angular degrees of an AC cycle that
elapses before SCR is turned on.

Turning ON an SCR
Apply enough gate triggering current.
Apply anode voltage equal to break-over
voltage.

Turning OFF an SCR

Anode current interruption
Forced commutation

THYRISTOR

b. TRIAC
Triode AC
A three-terminal device used to control the
average current flow to a load.
Can conduct current in either direction
when it is turned on so it is called a
bidirectional triode thyristor.
Acts like two SCRs connected in inverse
parallel so that each SCR conducts
alternately for every half cycle of an AC
signal.
Gated DIAC

TRIAC Schematic and Construction Diagram

TRIAC

ELECTRICAL CHARACTERISTICS
OF TRIAC
1. Maximum Allowable Main Terminal RMS
Current
1 A, 3 A, 6 A, 10 A, 15 A and 25 A

2. Breakdown Voltage
Highest main terminal peak voltage the
triac can block in either direction typically
100 V, 200 V, 400 V and 600 V

ELECTRICAL CHARACTERISTICS
OF TRIAC
3. On Stage Voltage Across the Terminals
Ideal value is 0 V
Typical value is 1-2 V

ADVANTAGES OF TRIAC OVER

MECHANICAL SWITCHES
No contact bounce

BREAK-OVER DEVICES
Small thyristors which do not switch the
main load current.
Useful as triggering devices.

a. SHOCKLEY DIODE
A 4-layer diode constructed like an SCR
but without gate terminal.
Unilateral triggering device for SCR.

SHOCKLEY DIODE Schematic Symbol and

Construction Diagram

SHOCKLEY DIODE CHARACTERISTIC CURVE

ADVANTAGES OF SHOCKLEY
DIODE OVER SCR
Relatively independent of temperature.

BREAK-OVER DEVICES

b. SILICON UNILATERAL SWITCH

Solid-state device that provides a positive
pulse.
Also a 4-layer diode with a typical break-over
voltage of 8 volts.
In terms of firing, it has faster rate than
Shockley diode.

BREAK-OVER DEVICES

c. SILICON BILATERAL SWITCH (SBS)

A bilateral or bidirectional break-over device.
Two SUS connected back to back in parallel.
Popular in low voltage trigger control circuits.
Has lower break-over voltages than diacs.

ADVANTAGES OF SBSS OVER DIACS

More vigorous switching characteristics

BREAK-OVER DEVICES

d. DIAC
Diode AC
Constructed like a TRIAC
but
without
a
gate
terminal
Used as a trigger for
TRIAC circuits
Bilateral trigger diode
Symmetrical trigger diode
because its break-over
voltage is close 32 volts

DIAC CHARACTERISTIC CURVE

BREAK-OVER DEVICES

e. SILICON CONTROLLED SWITCH (SCS)

SCS turn of time is 1-10 sec.
The higher the anode gate current, the lower
the required anode to cathode voltage to turn
on device on.
To turn on the device, a negative pulse must
be applied to the anode gate terminal while a
positive pulse is required to turn of the
device.

ADVANTAGES OF SCS OVER SCR

Reduced turn off time

BREAK-OVER DEVICES

f. GATE TURN OFF SWITCH

Thyristors:
(a) Cross-section,
(b) silicon controlled
rectifier (SCR) symbol,
(c) gate turn-of thyristor
(GTO) symbol

ADVANTAGES OF GATE TURN OFF

SWITCH (GTO)

Can be turned on or off by applying the proper pulse to the c

BREAK-OVER DEVICES

g. UNIJUNCTION TRANSISTOR (UJT)

Break-over type switching device
Double-based diode
Semiconductor device consisting of thin
silicon bar on which a PN junction acting
as emitter is formed near one end
Operates in the negative resistance region

UJT Symbol and Characteristic Curve

APPLICATIONS OF UJT

INTRINSIC STAND-OFF RATIO ()

= RB1 / (RB1 + RB2)

INTERBASE RESISTANCE

RB2 + RB1 = RBB

FIRING POTENTIAL
Necessary to fire the UJT.
Equal or greater than
emitter and base1.

voltage

Vp = VBB + Vdiode

across

BREAK-OVER DEVICES

h. PROGRAMMABLE UNIJUNCTION
TRANSISTOR (PUT)
Similar operating characteristics as UJT
Programmable
because
the
internal
resistances of UJT are external for PUT and
can be selected to a certain desired response.

Symbol and PUT Construction

Anode

Anode

Gate

Cathode

P
N
P
N

Cathode

Gate

REVIEW
QUESTIONS

28. Referred to a bidirectional trigger

diode.
a.
b.
c.
d.

Triac
UJT
BJT
Diac

29. Voltage required to turn on any

thyristor.
a.
b.
c.
d.

Trigger voltage
Breakover voltage
Barrier voltage
Supply voltage

30. Also known as a four-layer diode.

a.
b.
c.
d.

Diac
Shockley diode
Zener diode
FET

31. The thyristor counterpart of the

unijunction transistor.
a.
b.
c.
d.

UJT
PUT
SBS
SCS

32. Minimum current required to keep a

thyristor on.
a.
b.
c.
d.

Holding current
Trigger current
Supply current
Collector current

33.A
unidirectional-three
terminal
device,
the
most
popular
of
thyristors.
a.
b.
c.
d.

SCS
Triac
UJT
SCR

34. The angle of an AC supply voltage

during which an SCR is of.
a.
b.
c.
d.

Conduction angle
Firing delay angle
Right angle
Of angle

35.Thyristors are most often used as

a.
b.
c.
d.

Switches
Amplifiers
Bufers
Decoders

36.The total internal series resistance of

the UJT.
a.
b.
c.
d.

Bulks resistance
Total resistance
Interbase resistance
RIS

37.The most popular and

breakover voltage of a diac.
a.
b.
c.
d.

32 V
16 V
8V
4V

typical

38.The peak voltage of a PUT is

a. VD + VBB
b. VG + VBB
c. VD + VG
d. VBB

39.A UJT has = 0.65 and is

connected to a 20 V supply. What
is its VEB1?
a.
b.
c.
d.

12 V
13.6 V
12.7 V
14 V

Solution:
VEB1 = VD + VS
= 0.6 V + 0.65 (20 V)
= 13.6 V

40.The three terminal semiconductor

device that acts in either direction.
a.
b.
c.
d.

Triac
SCR
Diac
SCS

41.The P of PUT stands for

a.
b.
c.
d.

Programmable
Performance
Peak
Post

42.The terminals of a UJT are

a.
b.
c.
d.

Gate, Anode, Cathode

Anode, Cathode
Emitter, Base
Emitter, Base1, Base2

43.The lowest current that can prevent

the transition of a UJT from
conduction to blocking region.
a.
b.
c.
d.

Switching current
Emitter current
Valley current
Peak current

44.The SCS has how many gate

terminals?
a.
b.
c.
d.

0
1
2
3

45.What device has two terminals

connected in inverse-parallel that
pass in two directions?
a.
b.
c.
d.

Triac
Diac
Shockley
SCR

46.What is the breakover voltage of a

PUT if it is connected to a 15 V
supply across the gate terminal?
a.
b.
c.
d.

10.7 V
23.7 V
15.7 V
5.3 V

Solution:
VP = VD + VG
= 0.7 V + 15 V
=15.7 V

47.The gap between the

blocking region and the
conduction region.
a.
b.
c.
d.

Band gap
Switching region
Jump gap
Negative resistance region

forward
forward

48.The cathode of the PUT is the

counterpart of which terminal in
UJT?
a.
b.
c.
d.

Anode
Base2
Emitter
Base1

49.An electronic switch that has the

highest
single
device
current
capacity
and
can
withstand
overloads better.
a.
b.
c.
d.

Thyratrons
Ignitrons
SCR
Triac

50. Group of devices with 4 or more

semiconductor layers.
a.
b.
c.
d.

Transistors
Diodes
Thyristors
Op-Amps

51.Identify which of the following is a

three layer device.
a.
b.
c.
d.

SCS
Diac
Triac
PUT

52.What device can be modeled by a

diode and two resistors?
a.
b.
c.
d.

BJT
DIAC
SCR
UJT

53.A junction that is formed by adding

controlled amounts of an impurity to
the melt during crystal growth is
termed as
a.
b.
c.
d.

Fused junction
Unijunction
Alloy junction
Doped junction

54.A triac is a ______.

a.
b.
c.
d.

2
2
3
3

terminal
terminal
terminal
terminal

switch
bilateral switch
unilateral switch
bidirectional switch

55.A thyristor equivalent of a thyratron

tube is _____.
a.
b.
c.
d.

Diac
Triac
SCR
PUT

56.Which of the following describes a

triac?
a. Conducts when not triggered
b. Conducts when not triggered in both
directions
c. Conducts when triggered in one direction
d. Conducts when triggered in both direction

57.Minimum anode current to hold a

thyristor at conduction.
a.
b.
c.
d.

Trigger
Maintaining current
Holding current
Threshold voltage

58.General term for semiconductor

devices primarily used as switches.
a.
b.
c.
d.

Shockley
Thyratron
Thyristor
Relay

59. A two-terminal, unidirectional

thyristor.
a.
b.
c.
d.

DIAC
Shockley
TRIAC
Diode

60.A thyristor is basically ______.

a.
b.
c.
d.

PNPN device
A combination of diac and triac
A set of SCRs
A set of SCR, diac and triac

61.What is the PNPN device with two

gates?
a.
b.
c.
d.

Diac
Triac
SUS
SCS

62.Which device incorporates a terminal

for synchronizing purposes?
a.
b.
c.
d.

Diac
Triac
SUS
SCR

63.An SCR is a _______.

a.
b.
c.
d.

Unijunction device
Device with three junctions
Device with four junctions
Device with two junctions

64.A thyristor can be turned of

a. By reducing the anode current below the
holding current value
b. By reversing the anode voltage
c. Either a or b
d. Both a and b

65.Minimum
duration
of
pulse
triggering system for thyristors is
________.
a.
b.
c.
d.

At
At
At
At

least
least
least
least

10 microseconds
30 milliseconds
10 milliseconds
1 second

66.A device that cannot be triggered by

voltage of either polarity is ________.
a.
b.
c.
d.

Diac
Triac
SCS
All of the above

67.Technically, what is dicing means?

a. Process of joining two diacs
b. Circuit of reducing noise
c. Device for reducing magnetic and radio
interference
d. Process of breaking the silicon slice into
chips

68.The term used to describe the process

whereby two transistors with positive
feedback are used to simulate the
action of the thyristor.
a.
b.
c.
d.

Arcing
Latching
Damping
Switching

69.It is the minimum anode current to

hold a thyristor at conduction.
a.
b.
c.
d.

Trigger
Maintaining current
Holding current
Threshold voltage

70.Electron tube containing mercury

functioning as a rectifier.
a.
b.
c.
d.

Thyratron
Ignitron
Thyrector
SCR

71.How do you stop the conduction

during which the SCR is also
conducting?
a.
b.
c.
d.

Remove voltage gate

Increase cathode voltage
Interrupt anode current
Reduce gate curent

72.A series RC connected in parallel

with an SCR to eliminate false
triggering is the _______.
a.
b.
c.
d.

Crowbar
Snubber
Varistor
Eliminator

73.Which are the three terminals of a

TRIAC?
a.
b.
c.
d.

Gate, anode1 and anode2

Gate, source and sink
Base, emitter and collector
Emitter, base1 and base2

74.The term used to describe the

process whereby two transistors with
positive feedback are used to
simulate the action of the thyristor.
a.
b.
c.
d.

Arcing
Latching
Damping
Switching

75.The minimum emitter to base

voltage to trigger the UJT is the
________.
a.
b.
c.
d.

Forward breakover voltage

Trigger
Breakdown voltage
Peak voltage

76.The ratio of the emitter to base1

resistance to the interbase resistance
of a UJT is called ________.
a.
b.
c.
d.

Aspect ratio
Current gain
Voltage gain
Intrinsic standof ratio

77.For a UJT, it is the region between

the peak and valley points as seen
in its characteristics curve.
a.
b.
c.
d.

Active region
Negative resistance region
Trigger region
Saturation region

78.This device is two zener diodes

connected back to back in series and
is used to support voltage surges and
transients.
a.
b.
c.
d.

Thyristor
Varactor
Thyrector
Phanatron

79.Refers to the number of degrees of an

AC cycle during which the SCR is
turned on.
a.
b.
c.
d.

Conduction angle
Firing delay angle
Induction angle
ON angle

80. A four-element solid state device

that combines the characteristics of
a both diodes and transistors.
a.
b.
c.
d.

Varactor
Zener diode
Tunnel diode
SCR

81. Electron tube equivalent to solid

state SCR.
a.
b.
c.
d.

Triode
VTVM
CRT
Thyratron

82. Find the two stable

conditions of an SCR.
a.
b.
c.
d.

operating

Conducting and non-conducting

Oscillating and quiescent
NPN conduction and PNP conduction
Forward
conducting
and
reverse
conducting

83. How do you stop conduction during

which SCR is also conducting?
a.
b.
c.
d.

Remove voltage gate

Increase cathode voltage
Interrupt anode current
Reduce gate current

84. When an SCR is triggered or on

conducting,
its
electrical
characteristics are similar to what
other solid-state device (as measured
between its cathode and anode)?
a.
b.
c.
d.

The
The
The
The

junction diode
varactor diode
tunnel diode
hotcarrier diode

85. Which of the following does not have

a base terminal?
a.
b.
c.
d.

UJT
PNP
SCR
NPN

86. A series RC circuit that is

connected in parallel with an SCR
to eliminate false triggering.
a.
b.
c.
d.

Crowbar
Snubber
Varistor
Eliminator

87. A circuit that protects a sensitive

circuit from a sudden increase in
supply voltage.
a.
b.
c.
d.

Crowbar
Snubber
Varistor
Eliminator

88. A two-terminal, bidirectional

thyristor.
a.
b.
c.
d.

DIAC
Shockley
TRIAC
Diode

89. A DIAC is equivalent to inverse

parallel combination of
a.
b.
c.
d.

Shockley diodes
Schottky
BJT
SCRs

90. A TRIAC is equivalent to inverse

parallel combination of
a.
b.
c.
d.

Shockley
Schottky
BJT
SCRs

91. Which are the three terminals of a

TRIAC?
a.
b.
c.
d.

Gate, anode1 and anode2

Gate, source and sink
Base, emitter and collector
Emitter, base1 and base2

92. Which device can be modeled by a

diode and two resistors?
a.
b.
c.
d.

BJT
DIAC
SCR
UJT

93. The minimum emitter to base 1

voltage to trigger the UJT.
a.
b.
c.
d.

Forward breakover voltage

Trigger
Breakdown voltage
Peak voltage

94. The ratio of the emitter to base1

resistance
to
the
interbase
resistance of a UJT.
a.
b.
c.
d.

Aspect ratio
Current gain
Voltage gain
Intrinsic standof ratio

95. For UJT, it is the region between the

peak and valley points.
a.
b.
c.
d.

Active region
Negative resistance region
Trigger region
Saturation region

96. Typical breakover voltage of an

SBS.
a.
b.
c.
d.

2V
4V
8V
16 V

97. The trigger current is applied to

the
a.
b.
c.
d.

Anode
Gate
Cathode
Base

98. The region where breakover voltage

of the
SBS drops
to
1
V
instantaneously.
a.
b.
c.
d.

Falldown region
Fallback region
Breakback region
Breakdown region

99. The ratio of RB1 and RBB is called

a.
b.
c.
d.

Intrinsic standof ratio

Reubers ratio
Common mode rejection ratio
Cats ratio

CONTROL SYSTEM

a. OPEN LOOP CONTROL SYSTEM

Controlled directly by an input signal.
It has no feedback and therefore less
accurate.
Usually requires an operator to control
the speed and direction of movement of
the output.

CONTROL SYSTEM

b. CLOSED LOOP CONTROL SYSTEM

Can respond and move loads quickly.
With greater accuracy.
Has an automatic feedback system that
informs the input the desired movement
has taken place.

SERVO SYSTEM
Classified as closed-loop system

BASIC SERVO SYSTEM

Normally made up of electromechanical parts
and consists of a synchro control system, servo
amplifier and feedback.
INPUT

BASIC
SERVO
SET-UP

CONTROL

AMP

MOTOR

FEEDBACK

LOAD

BASIC SERVO SYSTEM

a. POSITION SERVO
Control the position of the load.
In AC position servo, the amplitude and
phase of the AC error signal determine the
amount and direction the load will be driven.
In the DC position servo system, the
amplitude and polarity of the DC error signal
are used to determine the amount and
direction of the load will be driven.

Potentiometer is one of the

simplest position sensor
device and is generally
used because of its small
size, high accuracy and
output which can either be
AC or DC.
Balanced potentiometer in a
closed loop servo system is
a voltage divider that
functions as a position
sensor and produces the
error voltage that is fed to
the servo amplifier.

LINEAR
POSITION SERVO

BASIC SERVO SYSTEM

b. VELOCITY SERVO
Same principle of error signal generation
as position servo except that the velocity is
being sensed rather than the position.

BASIC SERVO SYSTEM

c. ACCELERATION
SERVO
Similar to velocity
and position servos
except
that
the
acceleration of the
load is being sensed
rather than position
or velocity.
The tachometer of the
velocity
loop
is
replaced
with
an
accelerometer.

HIGH
ACCELERATION
SERVO

DAMPING
Used to stabilize a system to minimize or
eliminate the problem of overshot.
DAMPING CONDITIONS

UNDERDAMPED
Provides instant response to an error signal but
results in the load oscillating about the point of
synchronism.

OVERDAMPED

Takes as excessive amount of time to reach

synchronization.

OVERDAMPED

UNDERDAMPED

TIME LAG
Servo characteristics defined as the time
between the input of the signal and the
actual movement of the load.
Undesirable and is reduce with the use of
high gain amplifiers.
Damping systems are added to smoothen the
operation.

SERVO DEVICES

a. AC SERVO MOTORS
Used in servo systems that move light
loads.

SERVO DEVICES

b. DC SERVO MOTORS
Control heavy loads and are widely used
in servo systems.

SERVO DEVICES

c. E-TRANSFORMER
Magnetic error detector that can be used in
systems
limited
by
large
angular
movements.

CROSSED E-TRANSFORMER

SERVO DEVICES

d. MODULATORS
Used to change a DC error signal into an
AC input error signal for servo amplifiers.

e. DEMODULATORS
Convert AC error signal to DC error
signal.
Drive a DC servo amplifier.

SERVO DEVICES

f. MAGNETIC AMPLIFIERS
Used when power from a conventional
servo amplifier is too small to drive a large
servo motors.

SERVO DEVICES

g. RATE GENERATOR
Tachometer
Used in the velocity servo loop.

PRECISION RATE GENERATOR

SERVO DEVICES

h. SERVO AMPLIFIER
Used in AC or DC servo system.
Must have a flat gain, minimum phase
shift and low noise level.

DIGITAL SERVO AMPLIFIER

V. GYRO
GYROSCOPE
Applied to any rapidly
spinning object.
A
functional
gyroscope
is
constructed
and
mounted.
RATE GYROS are
specially mounted so
they are free to
precess in only one
direction
and
are
used
to
measure
angular rates.

GYROSCOPE

PROPERTIES OF GYROS

1. RIGIDITY

Tendency of a spinning wheel to remain

in fixed position in space.

Factors that Affect Rigidity

a. Weight
b. Shape
c. Speed of rotation of the rotor

PROPERTIES OF GYROS

2. PRECESSION
Property of a gyro that causes it to tilt
in a direction perpendicular to the
direction of any outside force.
The direction of precession in a gyro
is always 90 from the direction of the
applied force.

COMPONENTS OF A UNIVERSALLY
MOUNTED GYRO
1.
2.
3.
4.

Rotor
Inner Gimbal
Outer Gimbal
Base

REVIEW
QUESTIONS

100.It is a system in which a precise

movement of a large load is
controlled by a relatively weak
control signal.
a.
b.
c.
d.

Synchro
Servo
Gyro
Motor

101.It is the name given to the electrical

output of the control transformer.
a.
b.
c.
d.

Error signal
Correct signal
Diferential signal
Error free signal

102.In a servo system, there are series

of overshoots which are known as
______.
a.
b.
c.
d.

Eating
Climbing
Hunting
Resting

103.This principle stabilizes a system to

minimize the problem of overshoot.
a.
b.
c.
d.

Clamping
Fanning
Damping
Lagging

104.It is the property of gyro causing it

to tilt in a direction perpendicular to
the direction of any outside force.
a.
b.
c.
d.

Recession
Tecession
Precession
Post session

105.It is the tendency of a spinning

wheel to remain in fixed position in
space.
a.
b.
c.
d.

Mobility
Rigidity
Accuracy
Alternativity

106.A universally mounted gyro has

how many gimbals?
a.
b.
c.
d.

One
Two
Three
Four

107.In what direction will a gyro precess

in response to an outside force?
a.
b.
c.
d.

Perpendicular to the force

Perpendicular to the spin axis
Parallel to the force
Parallel to the spin axis

108.How many degrees of freedom does

a rate gyro usually have?
a.
b.
c.
d.

One
Two
Three
Four

109.What gyro characteristics provide

the basis for the operation of rate
gyro?
a.
b.
c.
d.

Decision
Precession
Weight
Spin

110.What is defined as a device that

gives an indication usually in the
form of a voltage that is proportional
to the acceleration to which it is
subjected?
a.
b.
c.
d.

Inertia meter
Accelerometer
Speedometer
Voltmeter

HAPPY
REVIEW!