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Bipolar technology
- the size of bipolar transistors must be reduced to meet the high-density requirement
Figure illustrates the reduction in the size of the bipolar transistor in recent years.
- each transistor must be
electrically isolated to prevent
interactions between devices
- to 1970, both the lateral and
vertical isolations were
provided by p-n junctions
- In 1971, thermal oxide was
used for lateral isolation,
resulting in a reduction device
size
-
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NPN type
- the majority of bipolar transistor are n-p-n type because the higher mobility of minority carriers
(electrons) in the base region results in higher-speed performance than can be obtained with p-n-p types
- figure shows a perspective view of an n-p-n
type bipolar transistor, in which lateral
isolation is provided by oxide walls (also
reduce capacitance)
- vertical isolation is provided by the n+ -p
junction
-
Cross-sectional view
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Cross-sectional view
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