A PRESENTATION ON THE USE & EFFECT OF

CNT IN FET & OPTOELECTRIONICS FIELD

Prepared By-Shouvik Musavvir

ID-1006007
Level-4,Term-1
Submitted to-Dr. Sharif
MohammadMominuzzaman
Professor , EEE
Department ,BUET

Recent challenges in FET

industry

1. Decreasing The minimum chip length ,

which has reached a certain limit in the
silicon based industry
2.Decreasing the power consumption in the
electronic devices , especially in the
subthreshold region where the digital logic
indicates zero
Improving high electron transport
characteristics in inter chip connections

Characteristics of CNT FET

It flows holes for negative gate to source voltage &

electron for the positive gate-source voltage
It flows minimum current for gate-source
voltage=drain-source voltage/2
The sub threshold region occurs mainly due to the
schottky barrier between metal contact & the CNT ,
which is high for the situation stated above
Increasing the gate-source voltage from neutral point
means the schottky barrier decays exponentially and
the flow becomes independent of gate-source
voltage at around 0.6V from the neutral point .This is
the linear region where current doesnt depend on
Vgs anymore but remains proportional to Vds

Characteristics of CNT FET

At a point of Vds increment the current

reaches to a saturation point & its
independent of any terminal voltages
The subthreshold region graph shows
that for

Characteristics of CNT FET

Ultra thin oxide layer the current due to
tunneling effect decreases , and the
thermal power dissipation decreases
remarkably even to 0.3mV/degree for
2nm oxide layer . For bigger layer of
oxide than 10nm ,its heat dissipation
ability is less than silicon based mosfets .

Advantages of using CNT in FET

CNT based FET has a length of few

centimeters and diameter comparable to nm
range , so the device length can be more
decreased than before
The gate oxide can be super thin , even upto
2 nm which decreases the subthreshold
region current to the sufficient tolerable limit
so the power consumption decreases
Its unique ambipolar charectarstics means it
can be used in making p-FET & n-FET at the
same time , so the process technology is
much easier.

Disadvantages of using CNT in

FET

The first disadvantages is that its temperature

rise while conducting can be worse than
mosfets when it has traditional oxide layer
depth of 80-100nm, but for ultra thin oxide
layer this characteristics is remarkably
improved
The schottky barrier at the metallic contact is
the main disadvantage . The high schottky
barrier lead to inefficent chips . This problem
can be solved by changing the geomatrical
shape of the metalic contact , using different
types of metallic contact & doping the CNT

CNT based Optoelectronics

Devices-ambipolar method

The minimum current conduction situation

in CNT based FET means the hole and the
electrons combine with each other and thus
the energy is released as photons , minority
carrier injection also leads to this effect
Thus as the voltage is more near to the
minimum current condition , the energy or
photoluminescence can be controlled by it
This light or radiation is strictly along the
axis of CNT its position can be controlled by
the gate voltage

Disadvantages of ambipolar
methods

The radiation has a very wide band

characteristics which is poor when we
want to create visible light devices like
led
The efficiency is very poor , 1 in a million
hole-electron pair would create radiation
in visible range which is recently
increased to one in thousands
Thus the scientist switched on to
more unipolar methods

Unipolar photolumicense

Only p type or n type CNT is created by doping. By

gate trench effect & due to hetero problems like
diffusion or abnormalities , the high electric field
creates hole electron pairs due to collision with the
carrier .Resulting radiation is very bright , so the
abnormalities or errors in CNT can be detected by
this
Splitting the gate to make p type & n type devices
beside each other can make 100 times better
radiation than ambipolar systems
Thin flim can lead to more robust structure for
optoelectronic devices with the larger diameter
nanotube shares the principle region of radiation

Conclusions

CNT can be used to make future FETs ,a

as it solves the recent challenges in the
industry . But the process technology is
expensive & less reliable along with the
high schottky barrier represents the main
challenge
CNT based optoelectronics system an be
used in future if the radiation can be
made within the narrow band region &
efficiency is increased to a sufficient level