Fabrication and Simulation of Ag Doped ZnO

Hetero junction Solar cell

Under the able guidance of Dr. Rinku Sharma

Presented By:
Deepak Kumar Baghel

Introduction
Zinc oxide is an n-type semiconductor .
ZnO is an II VI group based directtransition-type compound semiconductor .
Wide energy band gap of 3.3 eV .
Hexagonal wurtzite structure.
Large exciton binding energy of 60 meV at
room temperature.

Structure of ZnO

The ZnO has wurtzite crystal structure,

named after the mineral wurtzite

The wurtzite structure is noncentrosymmetric (i.e., lacks

inversion symmetry).

Physical properties Of ZnO

Properties
Lattice constants (T = 300 K)

a0
c0

Density

Melting point

Relative dielectric constant

Gap Energy

Intrinsic carrier concentration

Exciton binding Energy

Electron effective mass

Electron mobility (T = 300 K)

Hole effective mass

Hole mobility (T = 300 K)

Value

0.32469 nm
0.52069 nm

5.606 g/cm3

2248 K

8.66

3.4 eV, direct

< 106 cm-3

60 meV

0.24

200 cm2/V s

0.59

5-50 cm2/V s

Why ZnO?:
Cheap.
abundant .
non-toxic elements.
it can be produced for large scale coatings.
Can be tailored of the ultraviolet absorption.
high stability in a hydrogen plasma.
Crystalline growth at low temperature.
Deposition on various substrates.
More resistant to radiation damage.
Relatively high mobility.

Advantages of ZnO

ZnO can be grown as a crystalline material at

relatively low deposition temperature.
The ZnO can be deposited on various substrates
such as silicon or amorphous glasses. So it is
possible to realize a total transparent ZnO-TFT by
depositing ZnO on the ITO glasses.
Because of wide band gap of ZnO, the
characteristics of ZnO-TFT will not degrade in the
exposure of visible light.

Advantages of ZnO
Contd
The ZnO thin film used as an active channel
layer can achieve a relatively high mobility.So
it is possible to reduce the gate voltage for
low power goals.
The most unique property of ZnO is its large
exciton binding energy of 60 meV, which is
much larger than those of GaN (24 meV).
ZnO is also much more resistant to radiation
damage than are other common
semiconductor materials, such as Silicon, and
GaN.

Why Ag doped ZnO ??

Both the grain and grain boundary
resistances of ZnO increase with the
addition of Ag.
Ag+ may behave like many other
monovalent dopant ions (e.g. Na+ andK+)
which have the ability to occupy both the
lattice and interstitial sites.
The presence of Ag solutes increases the
rates of densification and grain growth of
ZnO.

Fabrication

Deposition of
ZnO on
p-Silicon <100> by thermal
evaporation of ZnO .

Ag doped ZnO on
p-Silicon <100> by thermal
evaporation of sintered (1200oC)
Ag2O doped ZnO .
p-Silicon <100> ,post deposition of ZnO to form
bilayer.

Steps of Fabrication of
Ag doped ZnO
Appropriate percentage ( 3%) by weight of Ag2O:ZnO was
chosen
Dry (0.5 Hrs) and wet (in acetone 2.5 Hrs) ball
milling was done using agate mortar and
pestle.
Removal of acetone by drying at 150oC for 15
Mins.
Pellet was formed by hydraulic pressing with a weight of 7
tons.
Sintering was done at 1200oC for 1 Hr with the rate
of rise in temperature at 5oC/Hr in air atmosphere.
Deposition was done on p- Si and annealed at 450oC
followed by top and back metallization by aluminium.
10

Reasons behind
specifications

Maximum grain size obtained at ( 3%) by weight

of Ag2O:ZnO.

Ag doping was done using Ag2O because it was

observed to have given lower resistance over
direct doping of Ag.

450oC was chosen as previous experiments for

ZnO as well as literature showed larger grain
size with no significant improvement after this
temperature.
11

Analysis of Ag doped ZnO

Possible reasons of suppression of spectrum in visible

region
Interfacial mismatch might be reduced due to the presence of
Ag
Ag doped ZnO was annealed in air and ZnO was annealed in
nitrogen. Annealing in air might have
reduced oxygen vacancies.

The slight shift towards the lower

frequency on Ag doping is due to
increase in band gap.
Bilayer exhibits the property of the
underlying ZnO which was annealed in
nitrogen and after deposition of Ag
doped ZnO it was annealed in air.

12

Details of Simulation using

ATLAS

Doping
ZnO (n-type) : 1e16 per cc
Si (p-type) : 1e14 per cc

Models used
Boltzman (Default)

Method used for solving :

Newton Gummel iteration

Characteristics obtained
I-V Characteristics
Doping Profile

Device dimensions

ZnO thickness : 0.2 m

SiO2 thickness : 0.1 m

Si thickness : 40 m

Channel Width: 5 m

Device Length: 20 m

Electrode Length: 7.5 m

13

Future Work

Investigating change in efficiency and

characteristics with the variation of
thickness of ZnO.

Comparing optical and electrical properties

of Ag2O doped ZnO with that of ZnO based
solar cells.

Investigating Properties of bilayer.

14

Thank you

15