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Overview
Introduction
Experiments suggest
34mm
Coating applied
here
500m
0.02
0.00
-0.02
-0.04
0
200
400
600
Time (s)
800
Mechanical loss
3.5x10
-5
3.0x10
-5
2.5x10
-5
2.0x10
-5
1.5x10
-5
1.0x10
-5
5.0x10
-6
0.0
0
50
100
150
200
Temperature (K)
250
300
1.2x10
-3
1.1x10
-3
1.0x10
-3
9.0x10
-4
8.0x10
-4
7.0x10
-4
6.0x10
-4
5.0x10
-4
4.0x10
-4
3.0x10
-4
10
20
Temperature (K)
30
40
( )
2
1
1 01e
Ea
K BT
where 0-1 is the rate factor and Ea is the activation energy for the process
Ea
K BT peak
hence
ln ln 0 1
Ea
K BT peak
10
ln( 0)
5
0.046
0.048
0.050
0.052
0.054
0.056
0.058
1/Tpeak
Coating Structure
(a)
(b)
Ta2O5 layer
SiO2 layer
stable Si-O
bond angle
Potential energy
potential
barrier
Ea
stable Si-O
bond angle
1.2x10
-3
1.0x10
-3
8.0x10
-4
6.0x10
-4
4.0x10
-4
Mechanical loss
Mechanical loss
10
15
20
25
30
Temperature (K)
35
40
45
1.2x10
-3
1.0x10
-3
8.0x10
-4
6.0x10
-4
4.0x10
-4
10
15
20
25
30
35
40
Temperature (K)
Comparison of dissipation peak in doped and un-doped Ta2O5 for 4th (left) and 5th
bending modes (right).
Doping appears to reduce the height of the peak and slightly reduce
the width of the peak
45
Mechanical loss
1.4x10
-3
1.2x10
-3
1.0x10
-3
8.0x10
-4
6.0x10
-4
4.0x10
-4
2.0x10
-4
50
100
150
200
250
300
Temperature (K)
Effect of annealing
-4
-5
6.0x10
-5
4.0x10
-5
2.0x10
-5
effect of low T
peak still visible in
sample annealed
to 800 C
Losses similar
close to room
temperature
0
50
100
150
200
250
300
Temperature (K)
Loss at 1900 Hz of Ta2O5 annealed at 800 C and 600 C
-3
Mechanical dissipation
-4
6.0x10
-4
4.0x10
-4
2.0x10
-4
scatter at
higher
temperatures
possibly due to
loss into clamp.
Recent data
suggests SiO2
loss of ~410-5
at room
temperature.
50
100
150
200
250
300
Temperature (K)
Conclusions Ta2O5
Some evidence that TiO2 doping reduces the height of the dissipation
peak in Ta2O5,in addition to reducing the loss at room temperature.
coating loss
coated cantilever
uncoated cantilever
thermoelastic + residual gas loss
frequency: 2.8 kHz
geometry: 50 mm 8 mm 70 m
thermal stresses
in coating clearly
observed in the
bending of the
silicon substrate
HfO2 at 1955 Hz
HfO2 at 3310 Hz
HfO2 at 960 Hz
Mechanical loss
HfO2 at 56 Hz
1.4x10
-3
1.2x10
-3
1.0x10
-3
8.0x10
-4
6.0x10
-4
4.0x10
-4
2.0x10
-4
Ta2O5 at 960 Hz
Undoped tantala ~1000 Hz mode
Doped tantala ~ 1000 Hz
50
100
150
200
250
Temperature (K)
300
Mechanical loss
HfO2 at 960 Hz
1.4x10
-3
1.2x10
-3
1.0x10
-3
8.0x10
-4
6.0x10
-4
4.0x10
-4
2.0x10
-4
Ta2O5 at 960 Hz
Undoped tantala ~1000 Hz mode
Doped tantala ~ 1000 Hz
50
100
150
200
250
300
Temperature (K)
Preliminary results of the mechanical loss of Hafnia does not show a large
dissipation peak at low T.
Note: the higher Youngs modulus of Hafnia should lead to lower thermal
noise for the same .d (loss-thickness product) in the case of silicon
optics (not true for other materials e.g. fused silica).
Initial room temperature studies on a multi-layer silica-hafnia coating on
a fused silica substrate were found to be hafnia=(5.70.3)10-4.
However material properties for thin-film Hafnia are not well studied and
any changes over bulk properties will change the results presented here.