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Outline
1. Graphene Preparation and characterization
2. Device Fabrication
(a) Suspended Graphene-sensor
(b) Graphene Oxide based Sensor ( Suspended and
Supported)
(c) Body effect or contact effect or interface effect
3. Device Characterization
(a) Normal resistivity and Hall resistivity
(b) Study of time response
(c) Mass-Sensor
4. Conclusions
Preparation:
Preparation of oxidized graphene will be done by Hummers method [1]. Hydrazine
vapors would be used for reducing the oxidized graphene to graphene.
Substrates:
Substrates used would be Si/SiO2 and Si:H / Si:OM,
OM : Organic Molecules
Motivation:
To study the role of interface states in sensing applications,
[1]. Hummers et al., J. Am. Chem. Soc., 80, 1339 (1958)
Our Proposal
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Graphene being a one atom thick sheet comes in direct contact with substrate,
thus interface state should play important role in sensing. We propose to study
the effect of different substrates.
We propose that suspended graphene sheet will be more efficient for certain
(though not all) gas atom adsorption, as in suspended graphene, both the sides
of the aromatic C-sheet will be exposed to the gas(es).
Both types of sensors will be compared to evaluate the selective sensing
properties.
We propose to fabricate identical sensor devices using bilayer supported and
suspended graphene as the noise level in BLG is known to be much smaller
than that in SLG (IBM reported)
Establishing experimentally, whether the sensing is due to the body dominated
or it is contact dominated or induced by the graphene-substrate interfacial
defects. For the first, we cover the contacts with some insulator to avoid
molecular adsorption. For the second one, we cover large part of the graphene
sheet (except the contacts) using PMMA or any other insulating polymer layer
Metal nano-particles (Pt, Pd) embedded graphene sheets will be used for
hydrogen sensing.
Device Fabrication
Motivation for graphene sensors: Increased sensitivity to ultimate
limit to detect even single dopant
The ultimate limit of detectable S/N ratio at RT in graphene is due to
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Can be made defect free sheet, thereby a low level of excess (1/f) noise
caused by their thermal switching
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Device Fabrication
Procedure
SLG size: 10m x 10m on Si/SiO2(300nm)
Au/Ti, Au/Cr electrical contacts using EBL
Multi-terminal Hall bar to be defined (by etching graphene in O 2 plasma)
AFM linescan
Data by Y. Dan et al
Device Characterization
Mechanism:
Adsorb gases changes the resistivity/conductivity of the graphene layer making it a gas
sensitive resistor. Desorption of adsorb gases bring graphene to its natural state thus
recovering the sensor.
Changes in the longitudinal (normal) resistance upon gas adsorption
The Hall effect in graphene-based device shows strong sensitivity of the Hall resistivity
xy to the charge carrier density (n or p), making it promising feature for sensor
applications.
Variation in Vg can manipulate the carrier type,
the charge carrier density, and switching from one
conduction regime to other
Device Characterization
R depends on B, number of
graphene layers, and device to
device, reflecting the steepness of
Hall resistivity near neutrality
point
1 ' dc 2
'
dc
Fel Cg (Vg ) CgVg Vg .
2
m
f
f 0 [ A( E / ) t / L ] A 0.57T / L wt
2 .
m
f0
m
Sensitivity in Air:
f 0.25MHz
7.1 103
m
1/ 2
2 2
Conclusions
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Acknowledgement
Prof. Y. P. Chen and the team members of this project.
THANKS!
Noise Analysis