Analog Circuit Electronics

Circuits and Analog Electronics
Ch6 Basic BJT Amplifiers Circuits

6.1 Bipolar junction transistors (BJTs)
6.2 Single-Stage BJT Amplifiers
6.3 Frequency Response
6.4 Power Amplifiers
References:
References Floyd-Ch-3, 5, 6; Gao-Ch7;

Key Words:
Words
Construction of BJT
BJT in Active Mode
BJT DC Model and DC Analysis
C-E Circuits I-V Characteristics
DC Load Line and Quiescent Operation Point
BJT AC Small-Signal Model

This lecture will spend some time on understanding
how the bipolar junction transistor (BJT) works based
on what we have known about PN junctions. One way
to look at a BJT transistor is two back-to-back diodes,
but it has very different characteristics.
Once we understand how the BJT device operates, we
will take a look at the different circuits (amplifiers)
which we can build.


Construction of Bipolar junction transistors
Emitter-base
junction
Base region
(very narrow)
Emitter region
Collector
Collector region
Emitter
Base
Collector-base
junction

Construction of Bipolar junction transistors
NPN BJT shown

3 terminals: emitter, base, and collector
2 junctions: emitter-base junction (EBJ) and collector-base
junction (CBJ)
These junctions have capacitance (high-frequency
model)
BJTs are not symmetric devices
doping and physical dimensions are different for emitter
and collector

Standard bipolar junction transistor symbols
Depending on the biasing across each of the junctions, different

modes of operation are obtained cutoff, active and saturation

BJT in Active Mode
Two external voltage sources set the bias conditions for active
mode
EBJ is forward biased and CBJ is reverse biased

BJT in Active Mode
IE IEN IEP IEN
Forward bias of EBJ injects electrons from emitter into base

(small number of holes injected from base into emitter)

BJT in Active Mode
IB IBN IEP
Most electrons shoot through the base into the collector

across the reverse bias junction
Some electrons recombine with majority carrier in (P-type)
base region

BJT in Active Mode
IC = ICN + ICBO
Electrons that diffuse across the base to the CBJ junction are
swept across the CBJ depletion region to the collector.

BJT in Active Mode
IE IEN IEP IEN
IC = ICN + ICBO
IE = IB + IC
Let ICN
IB IBN
IEP
IC
---common-base current gain

IE
IE
IC (1 ) = IB + ICBO

BJT in Active Mode
IE IEN IEP IEN
IC
IE
IB IBN
IEP
IE=IB+IC
IC (1 )= IB+ICBO
Let
Beta:
IC
IB
I C I B (1 ) I CBO
---common-emitter current gain
I E I C I B (1 ) I B
I C I B I CEO I B
I I
E
C
IC=ICN+ICBO

BJT Equivalent Circuits
i B
iC
vBE
IB
IC
iE
V CE
VBEVon
IB
vCE
BJT DC model
iB
IE
Use a simple constant-VBE

model
Assume VBE = 0.7V

BJT DC Analysis
Make sure the BJT current equations and
region of operation match
VBE > 0,
VBC < 0, VE < VB <VC
Utilize the relationships ( and ) between
collector, base, and emitter currents to solve
for all currents
I E I C I B (1 ) I B
IC I B
I I
E
C

Base-emitter Characteristic(Input characteristic)
i B f (v BE )
vCE C

Collector characteristic (output characteristic)
iC f (VCE )
iB C
iB = 40 A

Collector characteristic (output characteristic)
iC f (VCE )
iB C

Collector characteristic
Saturation
Saturation occurs when the
supply voltage, VCC, is
across the total resistance
of the collector circuit, RC.
IC(sat) = VCC/RC
Vsat
Once the base current is high enough to produce saturation, further increases in
base current have no effect on the collector current and the relationship IC = IB is
no longer valid. When VCE reaches its saturation value, VCE(sat), the base-collector
junction becomes forward-biased.

When IB = 0, the transistor is in

cutoff and there is essentially no
collector current except for a
very tiny amount of collector
leakage current, ICEO, which can
usually be neglected. IC 0.
Cutoff
In cutoff both the base-emitter

and the base-collector junctions
are reverse-biased.

linearity

Discussion of an amplification effect
vi Ri iB
vo RL iC
vCE
vBE
Ri
RL
iB
iC
With iB iC
vi vo
E.g. for common-base configuration transistor:
vo
Av
50 ~ 300
vi

DC Load Line and Quiescent Operation Point
Q-point
VCC
ICQ
VCEQ
DC load line
Base-emitter loop: I B
Collector-emitter loop:
VCC VBE VCC
40( A)
Rb
Rb
vCE VCC iC RC 10 iC 4k

BJT AC Small-Signal Model
i B
iC
vBE
iB
iE
vCE
vbe
ib
rbe
ic
ib
vce
ie
rbe 300 (1 )
26( mV )
I E (mA)
We can create an equivalent circuit to model the transistor for small signals
Note that this only applies for small signals (vbe < VT)
We can represent the small-signal model for the transistor as a voltage controlled
current source (
) or a current-controlled current source (ic = ib).
For small enough signals, approximate exponential curve with a linear line.

BJT fundamentals:
VBE 0.7V
I E IC I B 1 I B IC
IC I B
Summary for three types of diodes:

Input
Output
Functions
C-C
C-E
C-B
IB
IB
IB
IE
IC
IC
Z at Z in
Z at Z in Z at Z in
Vat Vin Vat Vin

Key Words:
Words
Common-Emitter Amplifier
Graphical Analysis
Small-Signal Models Analysis
Common-Collector Amplifier
Common-Base Amplifier

C-E Amplifiers
To operate as an amplifier, the BJT must be biased to operate in active
mode and then superimpose a small voltage signal vbe to the base.
DC + small signal
coupling capacitor
(only
passes
ac
signals)
vi C2 vBE iB iC iB ic RC vCE C1 vo
vi iB
iB iC
iC vO

C-E Amplifiers
+
Vi
Vi
Vi

C-E Amplifiers
Apply a small signal

input voltage and see ib
i B I B ib
vBE=vi+VBE

C-E Amplifiers
See how ib translates into vce.
vi = 0 IB IC VCE
vi 0
i B I B ib
iC I C iC
vCE VCE vce
iC=ic+IC
VoM ViM
f ( o ) f (i )
vo out of phase with vi
vCE=vce+VCE

C-E Amplifiers
Considering VC (all the capaertors are replaced

by open circuits)
Considering Vi (all the capaertors are replaced

by short circuits)

C-E Amplifiers
Considering VC (all the capaertors are replaced
by open circuits)
Considering Vi (all the capaertors are replaced

by short circuits)

Graphical Analysis
Can be useful to understand the operation of BJT
circuits.
First, establish DC conditions by finding IB (or VBE)
Second, figure out the DC operating point for IC
VCC
Can get a feel for whether the BJT will stay in active region of operation
What happens if RC is larger or smaller?

Graphical Analysis
vce ic ( RC // RL ) ic RL'
VCC ' VCEQ I CQ RL '
VCC

Graphical Analysis
Q-point is centered on the ac load line:
VCC

Graphical Analysis
Q-point closer to cutoff:
VCC
Clipped at cutoff
(cutoff distortion)

Graphical Analysis
Q-point closer to saturation:
VCC
Clipped at cutoff
(saturation distortion)

Graphical Analysis

Steps for using small-signal models

1. Determine the DC operating point of the BJT
in particular, the collector current
2. Calculate small-signal model parameters: rbe
3. Eliminate DC sources
replace voltage sources with shorts and current
sources with open circuits
4. Replace BJT with equivalent small-signal models
5. Analysis

Example 1
VC ( I B I C ) R I B R b VBE I E R e
VC VBE
IB
Rb (1 )( R Re )
IC IB,
IE = IC + IB = (1+)IB
VCE VC I C RC I E ( R Re )

Example 1

Example 2
VB
Rb 2
VCC
Rb1 Rb 2
IC I E
vs
IB
VB VBE
V B/ Re
Re
IC
VCE VCC I C ( R C R e )

There are three basic configurations for single-stage

BJT amplifiers:
Common-Emitter
Common-Base
Common-Collector
VE VB VC
VE VB VC
VE VB VC

VCC I B Rb VBE I E Re I B Rb VBE (1 ) I B Re
VCC V BE
VCC
IB
Rb (1 ) Re Rb 1 Re
I C I B
VCC VCE I E Re VCE I C Re
VCE VCC I C Re
Note : V&o is slightly less than V&

i due to the voltage drop introduced by VBE
AV 1

The last basic configuration is to tie the collector to a fixed voltage, drive
an input signal into the base and observe the output at the emitter.

Lets find Av
Ai
Vo I e ( Re // RL ) I b (e1 )( Re // RL )
Vi I b [rbe (1 )( Re // RL )] I b rbe I e ( Re // RL )
(1 )( Re // RL )
( Re // RL )
AV
1
Vi rbe (1 )( Re // RL ) rbe (1 )( Re // RL )
VO

Lets find Av
I o RL AiI
e ( Re // RL ) (1 ) I b ( Re // RL )
(1 )( Re // RL )
Io Ib
RL
I b (rbe (1 )( Re // RL )) ( I i I b ) Rb
rbe (1 )( Re // RL ) Rb
(1 )( Re // RL ) Rb
Ii Ib
Ib
Rb
Rb
Ai
(1 )( Re // RL )
Rb
(1 )( Re // RL )
RL
(1 )( Re // RL ) Rb
RL
Ai
(1 )( Re // RL )
>>1
RL
(1 )( Re // RL ) << Rb

Lets find Ri
v i ib rbe i e ( Re // R L ) ib rbe (1 )( Re // R L )
Ri
vi
rbe (1 )( R e // R L )
ib
Ri Ri // Rb [rbe (1 )( Re // RL )] // Rb Rb // ( Re // RL )

Lets find Ro
I Re I I e
I I Re I e
I I Re I e I Re 1 I b
I I Re I b I b
v
v
(1 )
Re
rbe Rs // Rb
Ie
I Re
v
1
Ro
1
i 1
Re (rbe Rs // Rb ) (1 )
(rbe Rs // Rb )
Re //
1

Ri [rbe (1 )( Re // RL )] // Rb
(rbe Rs // Rb )
Ro Re //
1

( Re // RL )
AV
1
r
(
1
)(
R
//
R
)
be
e
L
Vi
VO
Ai
(1 )( Re // RL )
>>1
RL
Ri [rbe (1 )( Re // RL )] // Rb
(rbe Rs // Rb )
Ro Re //
1
C-C amp characteristics:

Gain is less than unity, but close (to unity) since is large and rbe is small.
Also called an emitter follower since the emitter follows the input signal.
Input resistance is higher, output resistance is lower.
- Used for connecting a source with a large Rs to a load with low
resistance.

Ground the base and drive the input signal into the emitter
VB VBE I E R e
VB
VCC
R b2
R b1 R b 2
VCE VCC I C RC I E Re VCC I C ( RC Re )
IC I E
IB
IC
VB V BE V B
Re
Re

Ro
Ri
Av
ic ( Rc // RL ) ( Rc // RL )
ib rbe
rbe
rbe
// Re
Ri=
(1 )
RoRC
C
C
I
(
R
R
)
( RC RL ) I E
C
L
A o
1
i
rbe
(
1
)
IC
I
i
r
be
(1 )
// Re
1 sinceI E I C
For RL<<RC, Ai
(1 )

RC ( R R )
I
RC
C
L
A i o
(1 )
RC RL
I i
For RL<<RC, Ai
(1 )
( Rc // RL )
rbe
rbe
rbe
//
R
Ri=
e
(1 )
(1 )
Av
RoRC
CB amp characteristics:
current gain has little dependence on
is non-inverting
most commonly used as a unity-gain current amplifier or current buffer and not
as a voltage amplifier: accepts an input signal current with low input resistance
and delivers a nearly equal current with high output impedance
most significant advantage is its excellent frequency response

Key Words:
Words
Basic Concepts
High-Frequency BJT Model
Frequency Response of the CE Amplifier

Basic Concepts
1.0V
0.5V
0V
-0.5V
-1.0V
0.5ms
V(1)
V(2)
1.0ms
1.5ms
2.0ms
2.5ms
Time
3.0ms
3.5ms
4.0ms

Basic Concepts
VO (t )
1.0V
0.5V
0V
-0.5V
-1.0V
0.5ms
V(1)
V(2)
1.0ms
1.5ms
2.0ms
2.5ms
Time
3.0ms
3.5ms
4.0ms

Basic Concepts
800mV
600mV
400mV
200mV
0V
0Hz
2KHz
V(2) V(1)
4KHz
6KHz
8KHz
10KHz
Frequency
12KHz
14KHz
16KHz
18KHz
1.0V
0.5V
0V
10Hz
V(2)
100Hz
1.0KHz
10KHz
100KHz
1.0MHz
20KHz

Basic Concepts
A v Av ( f ) ( f )
Lower cut off frequency
or
A Av ( ) ( )
Upper cut off frequency
The drops of voltage gain (output/input) is mainly due to:

1 Increasing reactance ofC s , Cc , Ce (at low f)
2 Porasitic capacetine elements of the net work (at high f)
3 Dissappearance of changing current(for trasformer coupled amp)

High-Frequency BJT Model
In BJTs, the PN junctions (EBJ and CBJ) also have capacitances associated
with them
C
rbe
rbe
C'
C'

rbe
C'
vs
There are three capacitors in the circuit.

At the mid frequency band, these are considered to be short
C' and
circuits and internal capacitors
are considered to be open
C',
circuits.
C'

At low frequencies, C1, C2 are an
open circuit and the gain is zero.
Thus C1 has a high pass effect on the
gain, i.e. it affects the lower cutoff
frequency of the amplifier.
vs
1 C1 ( Rs Rb1 // Rb 2 // rbe )
f L1
2 is the time constant for C2.
2 1
2 1
---is neglected

1 C1 ( Rs Rb1 // Rb 2 // rbe )
2 1
---is neglected
Capacitor Ce is an open circuit. The

pole time constant is given by the
resistance multiplied by Ce.
vs
( Rb // Rs rbe )
// Re Ce
1
e
f L 1.1 f
2
L1
f L 2 f Le
2
f Le
2 e

At high frequencies, C1, C2 Ce are all
short circuit.
The frequency that dominates is the
lowest pole frequency.
vs
The time constant is neglected for C'

( RL 1 jC' )
rbe
C'
C'
C ( Rb // Rs // rbe )C
1
fH
2 C
In summary:the lower cut off frequency is determined by network capacitence.

e.g.C1 C2 , Ce The higher cut off frequency is determined by the parasitic
ferquency of the BJT. e.g. C

rbe
C'
A v Avm
vs
f
,
fL
C'
(1 j
f
fL
f
f
)(1 j
)
fL
fH
f
For f L f f H ,
0 Av Avm mid - frequency
fH
f
j
f
fL
For f f L ( f f H ),
0, Av Avm
low - frequency
f
fH
1 j
fL
fL
1
For f f H ( f f L ) 0, Av Avm
High frequency
f
f
1 j
fH

rbe
vs
A v Avm
fL
(1 j
L
1
2 2 L
f
fL
f
f
)(1 j
)
fL
fH
fH
H
1
2 2 H
C'
C'

decade
decade

Key Words:
Words
Power Calculation
Class-A, B, AB Amplifiers
Complementary Symmetry(Push-Pull) Amplifier
Biasing the Push-Pull Amplifier (OCL)
Single-Supply Push-Pull Amplifier (OTL)

An Analog Electronics System Block
Sensor
Energy
conversion
Voltage
Amplifiers
Power
Amplifiers
Signal
Amplifiers
Load
Energy
conversion

The output power delivered to the load RL:
Po
Vom I om
2
1
Vom I om
2 2
The average power delivered by the supply:
1
PS
T
1
VCC iC (t )dt VCC
T
iC (t )dt VCC I C
The efficiency in converting supply power to useful output power is

defined as
P
OM 100%
PS

Power Calculation
The DC power by
the supply
PC VCEQ I CQ (VCC I CQ RC ) I CQ
2
PS I CQ
RC
The DC power delivered to BJT by the supply

Power Calculation
The average power dissipated as heat in the BJT:
1 T
vCE iC dt
0
T
1 T
( I CQ I m cos t )(VCEQ Vm cos t )
T 0
1
I CQVCEQ I mVm PC PCL
2
PT

Class-A Amplifiers
Class-B Amplifiers

Class-AB Amplifiers

Complementary Symmetry Power Amplifier (Class-B)

2
2
V
1 VCCVon
on sin t
PT 1
sin td t
d t
0
0
2
RL
RL
Von 2 2
1 VCCVon
sin td t
sin td t
0
0
2 RL
RL
Von 2 1
1 VCCVon

sin tdt
1 cos 2tdt
0
0
2 RL
RL 2
1 VCCVon
cos t
2 RL
2
Von 2
Von
1 VCCVon

2
2 RL
2
RL
2 RL
1 VCCVon Von 2

RL
4

PO
I om
2
2
1 Vom
2 2 RL
Vom
POM
Assuming vo Vom sin t

1
PT 1
2
1
vCE iC d t
2
2
1 VCC
2 RL
vCE VCC vo
vO
v
0 CC O d t
RL
1 VCCVOm VOm
RL
PT 1 0 for VOm 0
VOm VCC
2
4 VCC
PT PT 1 PT 2
2
RL
2
VCC
4
PT 1
RL
4
Note: PT represents the amount of

power dissipated by the BJT as heat

I om
2
1 Vom
2 2 RL
Vom
2
1 VCC
POM
2
2 RL
2
V
4
VOm VCC
PT 1 CC
RL
4
2
4 VCC
PT PT 1 PT 2
2
RL
PO
2
2VCC
PE PT PO
R L
2
1 VCC
P
O 2 RL
2
2 VCC
PE
4
Note that for class A: 25 ~ 50
RL
class B: 78.5
class AB: =25 ~ 78.5
=78.5%

Crossover
distortion

Biasing the Push-Pull Amplifier (Class-AB) (OCL)
To overcome crossover distortion, the biasing is adjusted to just overcome the
VBE of the transistors; this results in a modified form of operation called class
AB. In class AB operation, the push-pull stages are biased into slight
conduction, even when no input signal is present.
}V
CC
}V
CC
Power Calculation is the same as class-B

Single-Supply Push-Pull Amplifier (OTL)
The circuit operation is the same as that described previously, except the
bias is set to force the output emitter voltage to be VCC/2 instead of zero
volts used with two supplies. Because the output is not biased at zero
volts, capacitive coupling for the input and output is necessary to block
the bias voltage from the source and the load resistor.

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Circuits and Analog Electronics

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

NPN BJT shown

Ch6 Basic BJT Amplifiers Circuits

Depending on the biasing across each of the junctions, different

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

IE IEN IEP IEN

Forward bias of EBJ injects electrons from emitter into base

Ch6 Basic BJT Amplifiers Circuits

Most electrons shoot through the base into the collector

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

IE IEN IEP IEN

---common-base current gain

Ch6 Basic BJT Amplifiers Circuits

---common-emitter current gain

Ch6 Basic BJT Amplifiers Circuits

Use a simple constant-VBE

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

When IB = 0, the transistor is in

In cutoff both the base-emitter

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

E.g. for common-base configuration transistor:

Ch6 Basic BJT Amplifiers Circuits

VCC VBE VCC

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Summary for three types of diodes:

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Apply a small signal

Ch6 Basic BJT Amplifiers Circuits

See how ib translates into vce.

vCE VCE vce

vo out of phase with vi

Ch6 Basic BJT Amplifiers Circuits

Considering VC (all the capaertors are replaced

Considering Vi (all the capaertors are replaced

Ch6 Basic BJT Amplifiers Circuits

Considering Vi (all the capaertors are replaced

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits

Steps for using small-signal models

Ch6 Basic BJT Amplifiers Circuits

Ch6 Basic BJT Amplifiers Circuits