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FET construction
major part of the structure is the n-type material that forms the
channel between the embedded layers of p-type material
The n-type channel is connected through an ohmic contacts
drain (D) and source (S)
The two p-type materials are connected together and to the
gate (G) terminal
In the absence of any applied potentials the JFET has two p-n
junctions under no-bias conditions
Working of FET
Characteristic of FET
Regions in FET
VGS < 0
Transfer characteristics
Working of FET
iD= f(VGS,VDS)
id = gm vgs+ (1/rd)vds
AC equivalent ckt
VDD
AC equivalent ckt
AC equivalent ckt
MOSFET
Figure:nChannelEnhancementMOSFETshowingchannellengthLandchannelwidthW.
Depletion-type MOSFET.
Symbols for
(a) n-channel depletion-type MOSFETs
and
(b) p-channel depletion-type
MOSFETs.
ENHANCEMENT-TYPE MOSFET
Symbols for
(a)n-channel enhancement-type
MOSFETs and (b) p-channel
enhancement-type MOSFETs
CD amplifier
AC equivalent ckt
VDD
RD
R1
ii
+
vs
Rs
+
vs
Ci
R2
RSS
io
vi = v
gmv
rd
RD
RL
vo
_
_
mid-frequency CE amplifier circuit
vo
= -g m R 'L , where R L' = rd R D R L
vi
A vs =
Zi =
vi
= R Th , where R Th = R 1 R 2
ii
AI =
Zo =
vo
io
AP =
= rd R D
seen by R L
vo
Zi
= A vi
vs
R s + Zi
io
= A vi
ii
+
RL
Co
vi
+
RTh
io
D
ii
VDD
Zi
R L
po
= A vi A I
pi
CSS
vo
_
VDD
VDD
RD
R1
io
D
ii
Rs
vs
Ci
RL
R2
vi
CS
Co
C SS
RSS
vo
_
_
Common Source (CS) Amplifier
ii
Rs
S
+
RD
RSS
RL
R1
A vi
-g m R
R 'L
rd R D R L
Zi
R Th
Zo
rd R D
io
G
vi
C2
R2
vo
_
VCC
A vs
Common Gate (CG) Amplifier
VDD
AI
VDD
R1
AP
ii
+
vs
_
Rs
+
vi
'
L
g mR
CD
g m R 'L
1 g m R 'L
'
L
rd R D R L
R SS
R SS R L
1
gm
R Th
Co
Ci
+
vs
CG
Ci
Co
R2
R SS
_
Common Drain (CD) Amplifier (also called source follower)
Zi
R
+
Z
i
s
Z
A vi i
R L
Zi
A vi
R
+
s
Zi
Z
A vi i
R L
A vi A I
A vi A I
A vi
R SS
A vi
1
gm
Z i
R s + Zi
Zi
RL
A vi
A vi A I
where R Th = R 1 R 2
io
rd R D
+
RL
vo
_