Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
RF Receiver
Antenna
BPF1
LNA
BPF2
Demodulator
RF front end
LO
Low-Noise Amplifier
First gain stage in receiver
Amplify weak signal
NFsubsequent 1
GLNA
Impedance matching
Efficient power transfer
Better noise performance
Stable circuit
3
Noise performance
Power transfer
Impedance matching
Power consumption
Bandwidth
Stability
Linearity
Noise Figure
Definition
SNRin
Sin N in
NF
As a function of device
N device G N source
NF
G N source
NF of Cascaded Stages
Sin/Nin
Sout/Nout
G1, N1,
NF1
Gi, Ni,
NFi
GK, NK,
NFK
NF2 1 NF3 1
NFK 1
NF 1 NF1 1
...
G1
G1G2
G1G2 ...G K 1
Flicker noise g
WLC ox f
Dominant at low frequency
Vg
Id
Vi
Input-inferred noise
Vi 2 ( f ) 4kT
gm
k
WLC ox f
7
Noise Approximation
Noise spectral
density
1/f noise
Thermal noise
dominant
Thermal noise
Band of interest
Frequency
8
jXs
Vs
Pdel
RL
Rs jX s RL jX L
jXL
V
RL
Impedance matching
Load and source impedances conjugate pair
Real part matched to 50 ohm
9
Available Power
10
Reflection Coefficient
Rs
Vs
jXs
V IZ L
jXL
V
RL
I I * ( Z L Z L* )
Pdel
2
aa*
4Rs
4Rs
(V IZs* )(V * I *Z s )
Pref Pmax Pdel
bb*
4Rs
V IZ s
a
2 Rs
V IZs*
b
2 Rs
b Z L Z s*
a ZL Zs
11
Reflection Coefficient
No reflection
Maximum power transfer
12
S-Parameters
Parameters for two-port system analysis
Suitable for distributive elements
Inputs and outputs expressed in powers
Transmission coefficients
Reflection coefficients
13
S-Parameters
a1
b2
S21
S11
S22
S12
b1
b1 S11a1 S12 a2
a2
b2 S 21a1 S 22 a2
14
S-Parameters
b1
S11
a1 a 20
b2
S 21
a1 a 20
b1
S12
a2
b2
S 22
a2
a10
a10
15
S-Parameters
I1
Z1
Vs1
I2
S
V1
Z2
V2
Vs2
V1 I1Z1*
S11
V1 I1Z1 V
V2 I 2 Z 2* Re( Z1 )
S21
V1 I1Z1 Re( Z 2 ) V
V1 I1Z1* Re( Z 2 )
S12
V2 I 2 Z 2 Re( Z1 ) V
V2 I 2 Z 2*
S22
V2 I 2 Z 2 V
s 2 0
s 2 0
s 1 0
s 1 0
16
Stability Condition
Necessary condition
1 | S22 |2 | S11 |2 | S |2
K
1
2 | S12 S21 |
where
Stable iff
where
| S11 |2 | S 22 |2
L | S12 S 21 |
2
17
Assume
Vs
No flicker noise
ro = infinity
Cgd = 0
Reasonable for appropriate
bandwidth
Effective transconductance
Rs 4kTRs
Vs
io
Vgs
Gmeff
gmVgs 4kTggm
io g m Z in
Vs Rs Z in
18
Power Gain
Voltage input
Current output
ii
g m Z in
2
G
| Gmeff |
*
VsVs
Rs Z in
*
o o
g m 1 ( jC gs )
gm
Rs 1 ( jC gs )
1 jRs C gs
T 1
g
2
2
1 ( Rs C gs )
Rs
2
m
19
g
Rs g m
g
Rs g m
4kTg g m
g m2
4kTRs
1 2 ( RsC gs ) 2
(1 2 Rs2Cgs2 )
gRs g m
2
( g m / Cgs ) 2
gm
T
C gs
20
iin
Device
iout
Ai
iin
Ai
i
out T 1
iin T
iout
Ai
fT
0dB
frequency
21
i1
Rg
Cgs
V1
V2
i2
Cgd
Vgs
ri rds
Cdb
V2
Cgs
Cgd
rds
Cdb
Rg: Gate resistance
ri: Channel charging
resistance
gmVgs
22
T Calculation
i1
Rg
Cgs
V1
i2
Cgd
Vgs
ri rds
Cdb
i1
Rg
Cgs
gmVgs
V1
Cgd
i2
Vgs
ri
gmVgs
g m (1 sriCgs ) sC gd s 2riCgsCgd
I2
Y21
23
Y11 ( j T )
Y21 ( j T )
Solve for T
gm
T
gm
Cgs Cgd
Noise Performance
g
2
NF 1
g Rs gm 2
Rs gm
T
Low frequency
Rsgm >> g ~ 1
gm >> 1/50 @ Rs = 50 ohm
Power consuming
CMOS technology
gm/ID lower than other tech
T lower than other tech
25
Power transfer
S11=(1-sRCgs)/(1+sRCgs)
S21=2Rgm/(1+sRCgs), R=Rs=RL
Power consumption
High power for NF
High power for S21
26
Resistive termination
Series-shunt feedback
Common-gate connection
Inductor degeneration
27
Resistive Termination
io
Rs
Vs
RI
4kTggm
4kT/Rs 4kT/RI
Is
Rs
RI
Vgs
gmVgs
gm
G
1/ Rs 1/ RI j Cgs
Noise figure
2
Rs g Rs 1
1
2
g g m Rs 2
NF 1
RI
g m Rs RI
T
28
Resistive-termination
2
Rs
g Rs
2
1 g g m Rs 2
NF 1
RI g m Rs RI
T
Introduced by input
resistance
Signal attenuated
29
4g
NF 2
gm R
30
Series-Shunt Feedback
RF
Broadband matching
RL
Rs
Rin
Vs
Ra
Rs
Cgs
Vs
1 gm ( RL Ra ) s( Ra RF RL )Cgs
Rout
iout
RF
Vgs
( RF RL )(1 gm Ra sRaCgs )
gmVgs
RL
(1 g m Ra )(RF Rs )
1 ( g m sC gs )(Rs Ra )
sC gs ( Ra RF Rs RF Ra Rs )
1 ( g m sC gs )(Rs Ra )
Could be noisy
Ra
31
Common-Gate Structure
Rs
RL
Rs 4kTRs
Vgs gmVgs
Vs
I out
Geff
Vs
gm
1 g m Rs sRs Cgs
4kTggm
RL
RL
Rs 4kTRs
Vs
gm
Vgs
gmVgs
4kTggm
32
1/gm=Rs=50 ohm
33
gm2
(1 gm Rs )2 2 ( Rs Cgs )2
N device G N in
NF
1
G Nin
1
g
Rs g m
(1 g
4kTg g m
g m2
4kTRs
(1 g m Rs ) 2 2 ( RsCgs ) 2
2
2 2 2
R
)
Rs Cgs
m s
2
1 4g g 2
T
Signal attenuated
34
Zin Z s* 1 g m Rs sRsCgs
S11
Zin Z s 1 g m Rs sRsCgs
sRsCgs
2 sRsCgs
S 21 2 RLGeff
2 RL g m
1 g m Rs sRsC gs
2 sC gs
Summary CG Structure
Noise performance
No extra resistive noise source
Independent of power consumption
Impedance matching
Broadband input matching
No passive components
Power consumption
gm=1/50
Power transfer
Independent of power consumption
36
Rs
Lg
Zin
iin
Vs
Ls
Vs
iout
Lg
Cgs
Vin
Vgs
gmVgs
Ls
1
Vin I in sLg I in
( I in g mVgs ) sLs
sC gs
1
1
I in sLg I in
( I in g m I in
) sLs
sC gs
sC gs
1
g m Ls
I in s ( Lg Ls )
sC gs Cgs
Zin
37
Zin
Vs
Ls
Cgs
gmLs/Cgs
Zin=Rs
iout
Lg
Vgs
gmVgs
1
g m Ls
Z in s ( Lg Ls )
sC gs C gs
IM{Zin}=0
1
( Lg Ls )Cgs
RE{Zin}=Rs
g m Ls
Rs
C gs
2
0
38
Effective Transconductance
Rs
Zin
Ls
gmLs/Cgs
Vs
Geff
iout
Lg
Cgs
Vgs
gmVgs
I out g m ( sC gs )
Vs
Rs Z in
gm
1 s ( RsCgs g m Ls ) s 2Cgs ( Lg Ls )
39
gm2
Calculate NF at 0
NF
N device G Nin
1
G N in
g
Rs g m
= 0 @ 0
4kTg g m
g m2
4kTRs 2
( RsCgs g m Ls ) 2
2 ( RsCgs g m Ls )2
40
Rs
Vs
Stored power
Q
Lost power
Ls
gmLs/Cgs
I I * C
1
*
II R
CR
1
1
Qin
CR C gs ( Rs g m Ls / C gs )
Lg
Cgs
1
1
( Rs C gs g m Ls ) 2Rs C gs
41
1
( RsC gs g m Ls )
Decrease NF
gmLs/Cgs = 0
NF
g
Rs g m
2 ( RsCgs g m Ls )2
1
1
Rs g m Qin2
Conflict between
Power transfer
Noise performance
42
Further Discussion on NF
NF
g
Rs g m
2 ( RsCgs g m Ls )2
4( g m Ls ) 2
1
1 g
Rs g m Cgs ( Lg Ls )
4g Ls
1
Lg Ls
Frequency @ 0
2 ~= 1/Cgs/(Lg+Ls)
Input impedance
matched to Rs
RsCgs=gmLs
Ls Rs T
Suitable for hand
calculation and design
Large Lg and small Ls
Ls Lg 1 02Cgs
43
2
Z in Z s* 1 s Cgs ( Lg Ls ) sg m Ls sRsCgs
S11
1 s 2Cgs ( Lg Ls )
1 s( g m Ls RsCgs ) s 2Cgs ( Lg Ls )
S 21 2Geff RL
@ 20
2 g m RL
1 s ( RsC gs g m Ls ) s 2C gs ( Lg Ls )
1
( Lg Ls )C gs
1
Qin
( RsC gs g m Ls )
2 g m RL
T RL
S11 0; S 21
j 2 g m RLQin j
j0 ( Rs Cgs g m Ls )
0 Rs
44
Lg
Vs
Ls
I o g mVgs g m I in j0C gs
Power Consumption
P I DVDD
Cox W
2
(Vgs VT ) 2VDD
2
Cgs CoxWL
3
W
g m Cox (Vgs VT )
L
g m2 L2 3
W
2
Cox
Vgs VT
Cgs 2
L
g L
Rs m s
C gs
gm
RsCgs
Ls
g m2 L2
L2 Rs2
L2 Rs2
VDD
P
VDD
C gsVDD
2
3C gs
3 Ls
3 L2s 02 ( Lg Ls )
2
L
1 T L2VDD
1 L2 Rs2
VDD
P
C gsVDD
2 3
3
3 0 ( Lg Ls ) 3 0 Ls (1 Lg / Ls )
2 2
T
46
Power Consumption
L2
Rs2
1
P 2 3
0 Ls (1 Lg / Ls )
NF
4g Ls
1
Lg Ls
Technology constant
L: minimum feature size
: mobility, avoid mobility saturation region
Standard specification
Rs: source impedance
0: carrier frequency
Circuit parameter
Lg, Ls: gate and source degeneration inductance
47
Summary of ID Structure
Noise performance
No resistive noise source
Large Lg
Impedance matching
Matched at carrier frequency
Applicable to wideband application, S11<-10dB
Power transfer
Narrowband
Increase with gm
Power consumption
Large Lg
48
Cascode
LL
Vbias
Rs
M2
Lg
M1
Vs
Ls
Improve noise
performance
49
LL
Rs
Rs
Vo
Lg
Vs
Ls
Vo
Cgs
M1
Vs
Lg
Ls
Vgs
gmVgs
LL
50
Rs
Vs
Lb1
Cb1
Input
bias
Vdd
Lvdd
Lb2
Cb2 V
out
Ld
Lout
Output
bias
M2
M3
Tm
Cm
Lg
M1
Lgnd
Ls
Off-chip
matching
[3] D. Shaeffer and T. Lee, A 1.5-V, 1.5-GHz CMOS low noise amplifier, IEEE J. Solid51
State Circuits, vol. 32, pp. 745 759, May 1997.
Lvdd
M4
Ld
Vbias
Rs
Vs
Lb1
Cb1
Lout
M2
M3
Tm
Cm
Lg
M1
Lgnd
Ls
Unwanted
parasitics
[3] D. Shaeffer and T. Lee, A 1.5-V, 1.5-GHz CMOS low noise amplifier, IEEE J. Solid52
State Circuits, vol. 32, pp. 745 759, May 1997.
Circuit Details
Two-stage cascoded structure in 0.6 m
First stage
W1 = 403 m determined from NF
Ls accurate value, bondwire inductance
Ld = 7nH, resonating with cap at drain of M2
Second
4.6 dB gain
W3 = 200 m
53
54
IREF
IB1
M2
Vout1
NL
RX
VRF
Ns
Off-chip
matching
M1
Cs
CB
M4
VB1
M5
CX
Off-chip
matching
M7
M3
M6
[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.
55
Simplified view
56
RB
IREF
IB1
M2
Vout1
NL
RX
VRF
Ns
M1
Cs
CB
M4
VB1
M5
CX
M7
M3
M6
Bias
feedback
[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.
57
RB
IREF
IB1
M2
Vout1
NL
RX
VRF
Ns
M1
Cs
CB
M4
VB1
M5
CX
M7
M3
M6
Bias
feedback
[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.
58
M8
RB
IREF
IB1
M2
Vout1
NL
RX
VRF
Ns
M1
Cs
CB
DC output = VB1
M4
VB1
M5
CX
M7
M3
M6
Bias
feedback
[4] A. Karanicolas, A 2.7-V 900-MHz CMOS LNA and Mixer, IEEE J. Solid-State
Circuits, vol. 31, pp 1939 1944, Dec. 1996.
59
60
LNA Architecture
The cascode architecture
provides a good input
output isolation
Transistor M2 isolates the
R1
Miller capacitance
Input Impedance is obtained
using the source
M3
degeneration inductor Ls
R2
Gate inductor Lg sets the
resonant frequency
The tuning granularity is
LG
Input to LNA
achieved by the output
matching network
VDD
LD
M2
M1
Matching
Network
Output to
Mixer
LS
62
Matching Network
The output matching tuning
network is composed of a
varactor and an inductor.
The LC network is used to
convert the load impedance
into the input impedance of
the subsequent stage.
A well designed matching
network allows for a
maximum power transfer to
the load.
By varying the DC voltage
applied to the varactor, the
output frequency is tuned to
a different frequency.
63
64
Simulation results - NF
The noise figure is 1.8
dB at 1.4 GHz and rises
to 3.4 dB at 2 GHz.
Noise Figure
65
The output return loss at 1.77 GHz is 44.73 dB and the output return
loss at 1.7725 GHz 45.69 dB.
S22 at 2 GHz
67
IIP3
Flicker noise g
WLC ox f
Dominant at low frequency
Vg
Id
Vi
Input-inferred noise
Vi 2 ( f ) 4kT
g
gm
k
WLC ox f
70
Modifications
Thermonoise
gm
I ( f ) 4kTg g do 4kTg
2
d
71
72
73
Fliker noise
Traps at channel/oxide interface randomly
capture/release carriers
k
V (f)
fWLCox
2
g
I (f)
2
d
Kf
n
Kf
f
f
Parameterized by Kf and n
Provided by fab (note n 1)
Currently: Kf of PMOS << Kf of NMOS due to buried channel
74
ing 4kTdg do
75
real
Input impedance
g m Ldeg
1
Z in ( s) s( Lg Ldeg )
sC gs
C gs
Set to be real and equal to source resistance:
1
( Lg Ldeg )Cgs
2
0
g m Ldeg
C gs
Rs
76
I d2 ( f ) kTg g do 1 2 c d d2 (4Q2 1)
1
1 2 c d d2 (4Q 2 1)
4
gm d
d
g do 5g
1
2 Rs0C gs
0 ( Lg Ldeg )
2 Rs
77
Noise factor
o
F 1
T
g g do
1 2 c d (4Q 2 1) d2
2Q g m
g g do
2
2
K nf
1 2 c d (4Q 1) d
2Q g m
Compare:
NF
0
N device G N in
g
2
2
1
0 4( Rs Cgs ) 1
G N in
Rs g m
T
4
2Q
78
79
Example
Assume Rs = 50 Ohms, Q = 2, fo = 1.8 GHz, ft = 47.8 GHz
From
1
2 Rs0C gs
1
C gs
442 fF
2 Rs0Q 2(50)2 1.8e9(2)
Ldeg
Rs C gs
gm
Rs
50
0.17nH
T 2 47.8e9
1
1
Lg 2
Ldeg 17.5nH
( Lg Ldeg )Cgs
0 Cgs
2
0
80
81
If we choose Vgs=1V
Idens = 175 A/m
From Cgs = 442 fF, W=274m
Ibias = IdensW = 48 mA, too large!
83
0.68 d
g do 1.15
g do
d
2
0.68
0.43
5
5
g m 0.78mS
T
2 42.8 GHz
Cgs
2.9 fF
We now need to re-plot the Noise Factor scaling coefficient
- Also plot over a wider range of Q
o
F 1
T
g do 1
2
2
1 2 c d (4Q 1) d
g m 2Q
84
85
Recall
274 m
W
91m
3
86
Differential LNA
Value of Ldeg is now much better controlled
Much less sensitivity to noise from other circuits
But:
Combining inductive
degeneration and current reuse
Current reuse to save power
Larger area due to two degeneration
inductor if implemented on chip
NF: 2dB, Power gain: 17.5dB, IIP3: 6dBm, Id: 8mA from 2.7V power supply
Can have differential version
F. Gatta, E. Sacchi, et al, A 2-dB Noise Figure 900MHz Differential CMOS LNA,
IEEE JSSC, Vol. 36, No. 10, Oct. 2001 pp. 1444-1452
91
92
ia g m1va g v g v
2
m2 a
3
m3 a
ib g v
3
m3 b
i o ia ib
Sivakumar Ganesan, Edgar Snchez-sinencio, And Jose Silva-martinez
IEEE Transactions On Microwave Theory And Techniques, Vol. 54, No. 12, December 2006
93
94
95
Folded cascode
96
o
F 1
T
g do 1
1 2 c d (4Q 2 1) d2
g m 2Q
g do 1
2
2
K nf g
1 2 c d (4Q 1) d
g m 2Q
97
Targeted Specifications
Frequency
Noise Figure
IIP3
Voltage gain
Power
98
tox = 4.1e-9 m
e = 3.9*(8.85e-12) F/m
= 3.274e-2 m^2/V.s
Vth = 0.52 V
Noise related
= gm/gdo
d/g ~ 2
g~3
c = -j0.55
99
100
Insights:
gdo increases all the way with current
density Iden
gm saturates when Iden larger than
120A/m
Velocity saturation, mobility degradation ---short channel effects
Low gm/current efficiency
High linearity
102
Insights:
fT increases with Vod when Vod is small and
saturates after Vod > 0.3V --- short channel
effects
Cgs/W increases slowly after Vod > 0.2V
fT begins to degrade when Vod > 0.8V
gm saturates
Cgs increases
Design trade-offs
For fixed Iden, increasing Q will reduce the
size of transistor thus reduce total power --- noise figure will become larger
For fixed Q, reducing Iden will reduce
power, but will increase noise factor
For large Iden, there is an optimal Q for
minimum noise factor, but power may be
too high
105
106
Insights:
MOS transistor IIP3 only, when embedded into
actual circuit:
Input Q will degrade IIP3
Non-linear memory effect will degrade IIP3
Output non-linearity will degrade IIP3
107
Step 4: Estimate fT
108
Gm/W~0.4
Gm=0.4*128 ~ 50 mS
fT = gm/(Cgs*2pi) = 48 GHz
112
Large deviation
113
114
Target
1.6 dB
< 10mA
20 dB
-8 dBm
1.8 V
Simulated
0.8 dB
8 mA
21 dB
-6.4 dBm
-20dbm
-17 dB
1.8 V
115