SEMICONDUCTOR PHYSICS

Breakdown etc.
Breakdown in P-N junction diode
In Electronics, the term breakdown stands for release of
electron-hole pairs in excess.
1. Avlanche Breakdown (uncontrolled)
2. Zener Breakdown (controlled)
The critical value of the voltage, at which the breakdown of a P-N
junction diode occurs is called the breakdown voltage. The
breakdown voltage depends on the width of the depletion region,
which, in turn, depends on the doping level.
There are two mechanisms by which breakdown can occur at a
reverse biased P-N junction:
Avalanche breakdown
Avalanche breakdown
If the reverse bias is made very high, the thermally generated
electrons and holes get sufficient K.E from applied voltage to break
the covalent bonds near the junction and a large no. of electron-
hole pairs are released. These new carriers, in turn, produce
additional carrier again by breaking bonds. Thus reverse current
then increase abruptly and may damage the junction by the
excessive heat generated.
The avalanche breakdown occurs in lightly doped junctions, which
produce wide depletion region.
The avalanche breakdown voltage increases as the temp. of the
junction increases due to the increased probability of collisions of
electron and holes with crystal atoms.
Zener breakdown (controlled)
Zener Breakdown occurs at low voltage in heavily doped reverse
biased p-n junction.
Strong electric field directly (without impact of electron) pull out the
electrons from the covalent bond.
Zener breakdown voltage decreases as the temp. of the junction
increases. Since an increase in temp. increase the energy of valence
electron. So escape from covalent bond become easier for these
electrons. Thus a smaller reverse voltage Is sufficient to pull the
valence electron out of the covalent bonds.
Zener breakdown (controlled)
Zener Breakdown occurs at low voltage (<5 volts) in heavily
doped reverse biased p-n junction.
* Strong electric field directly (without impact of electron)
pull out the electrons from the covalence bond.
* Zener breakdown voltage decreases as the temp. of the
junction increases. Since an increase in temp. increase the energy
of valence electron.
Working of Zener Diode
At a certain reverse bias voltage (Zener voltage), in heavily doped p-n
diode, the bottom of conduction band in n-region becomes lower
than the top of valence band in p-region.
Electron now tunnel directly across the potential barrier from the
valence band in p-region into the conduction band in n-region.
Hence a large reverse current flows.
Kit Building Class Lesson 3 Page 8
The Zener Diode
+V
F

+I
F

-3 -6
1 2 3
zener
point
Constant
breakdown
voltage
The zener diode exhibits a constant voltage
drop when sufficiently reversed-biased.
This property allows the use of the zener
diode as a simple voltage regulator.
+V
V
r

R
D
Here, V
r
will be equal to the reverse breakdown voltage of
the zener diode and should be constant. What is the purpose
of the resistor in this circuit? Its job is to limit the current
flowing through the zener diode:
R
V V
I
r

Introduction
The basic function of zener diode is to maintain a specific voltage across its
terminals within given limits of line or load change. Typically it is used for
providing a stable reference voltage for use in power supplies and other
equipment.
This particular zener circuit will work to maintain 10 V across the load.
Zener Diode Applications
Regulation
In this simple illustration of zener regulation circuit, the zener diode will adjust its
impedance based on varying input voltages and loads (R
L
) to be able to maintain its
designated zener voltage. Zener current will increase or decrease directly with
voltage input changes. The zener current will increase or decrease inversely with
varying loads. Again, the zener has a finite range of operation.
Zener Limiting
Zener diodes can used for limiting just as normal diodes. Recall in previous
chapter studies about limiters. The difference to consider for a zener limiter is
its zener breakdown characteristics.
The diode
Diode structure and symbol
The diode is a single pn junction device with
conductive contacts and wire leads
The p region is called anode and the n region
is called cathode
The arrow points in the direction of
conventional current (opposite to electron
flow)
Typical diodes
Forward and reverse bias of a diode
The ideal diode model
The ideal model of
a diode is a simple
switch. The barrier
potential, the
forward dynamic
resistance and the
reverse current are
all neglected
The practical diode model
R
V V
I
F BIAS
F

The IV characteristics of the practical diode

model
The complex diode model
The IV characteristics of the complex diode
model

Photodiodes
Photodiodes are semiconductor light sensors that generates
current or voltage when PN junction is illuminated by light.
Photodiode working as photo-detector is essentially a reverse
biased PN junction diode which is designed to respond to photon
absorption.
When photodiode is kept under dark condition and sufficient
reverse voltage is applied then almost constant current,
independent of magnitude of reverse bias is obtained. Which is
called dark current.




25
Photodiode fundamentals
Based on PN or PIN junction diode
photon absorption in the depletion
region induces current flow
Depletion layer must be exposed
optically to source light and thick
enough to interact with the light
Spectral sensitivity


Material Band gap
(eV)
Spectral sensitivity
silicon (Si) 1.12 250 to 1100 nm
indium arsenide (InGaAs) ~0.35 1000 to 2200 nm
Germanium (Ge) .67 900 to 1600 nm
I
P
N
+
-
h
R
L
I
L
electron
hole

28
Photodiode structure
n- region
p+ Active Area
Insulation
Depletion region
Back Metalization
n+ Back Diffusion
Front
Contact
Rear
Contact
Incident light
Absorbtion in the
depletion layer
causses current to
flow across the
photodiode and if
the diode is
reverse biased
considerable
current flow will be
induced