A

PRESENTATION
ON

INSULATED GATE BIPOLAR
TRANSISTOR (IGBT)
Presented By
AJAY KUMAR
132502
Contents
Introduction
Constructional diagram
Schematic structure
Equivalent circuit diagram
Operating principle of IGBT
Characteristics of IGBT
Advantages and disadvantages of IGBT over
power MOSFET and BJT
Applications







Introduction
IGBT stands for Insulated Gate Bipolar Transistor.
It is controlled device (Voltage control).
IGBT has been developed by combining the best qualities of
BJT and Power MOSFET.
It is a functional integration of Power MOSFET and BJT
devices in monolithic form.
It possesses high input impedance like Power MOSFET and
low on state power loss as in BJT.
IGBT is free from the problem of second breakdown as in
BJT.
IGBT is also known as :
Metal Oxide Insulated Gate Transistor (MOSIGT),
Conductively-Modulated Field Effect Transistor
(COMFET),
Gain-Modulated FET(GEMFET).
It was also initially called insulated gate transistor(IGT).
Constructional diagram
Vertical structure of power MOSFET cell
Constructional diagram
The major difference bitween the corresponding
vertical MOSFET cell structure and IGBT is the
addition of a p+ injecting layer .
This layer forms a p-n junction with the drain
layer and injects minority carriers into it.
Hence it is a four layer three junction J1, J2 & J3
device as shown in figure.
The n type drain layer itself may have two
different doping levels.
The lightly doped n- region is called the drain drift
region and n+ region is called buffer layer.
Gate terminal is insulated from rest of the device.


Constructional diagram
This construction of the device is called Punch
Trough (PT) design. The Non-Punch Through (NPT)
construction does not have this added n+ buffer
layer.
The PT construction does offer lower on state voltage
drop compared to the NPT construction particularly
for lower voltage rated devices.
Symbol of IGBT.
Parasitic Thyristor in an IGBT cell
The IGBT cell has a parasitic p-n-p-n thyristor structure
embedded into it as shown in Fig (a).
The constituent p-n-p transistor, n-p-n transistor and the
driver MOSFET are shown by dotted lines in this
figure.
Important resistances in the current flow path are also
indicated .
A major effort in the development of IGBT has been
towards prevention of latch up of the parasitic thyristor.
This has been achieved by modifying the doping level
and physical geometry of the body region.
The modern IGBT is latch-up proof for all practical
purpose.
Parasitic Thyristor in an IGBT cell
Schematic Structure
Parasitic Thyristor in an IGBT cell
Exact equivalent circuit Approximate equivalent circuit

Operating principle of an IGBT
Case 1-Forward Blocking Mode:
When
VGE > 0V < VGET and
VCE = Positive collector voltage
Then
J1= Forward bias
J2 = Reverse bias
J3 = Forward bias
Hence
ICE =0


Operating principle of an IGBT
Case 2-Forward conduction mode:
When
VGE = +VGE >VGET, and
VCE = Positive collector voltage,
Then
Inversion Layer forms in p layer
Hence
ICE > 0 (due to inversion layer between n- & n+ region)


Operating principle of an IGBT
Case 3-Saturation region:
When
VGE = +VGE >VGET , and
VCE = Larger Positive collector voltage
Then
ICE = Constant (Independent of VCE )





Operating principle of an IGBT
Case 4-Break down region:
When
VGE = +VGE >VGET, and
VCE = Positive collector voltage beyond saturation
level.
Then
ICE= Rises rapidly
Hence
In this region the device may get damaged



Characteristics of an IGBT
The i-v characteristics of an n channel IGBT is
shown in Fig (a).
They appear qualitatively similar to those of a
logic level BJT except that the controlling
parameter is not a base current but the gate-
emitter voltage.
IGBT has three different characteristics as
1. Output characteristics
2.Transfer characteristics
3. Switching characteristics

Characteristics of an IGBT
Output Characteristics of IGBT
Transfer Characteristics of an IGBT
Switching Characteristics of an IGBT
Advantage of IGBT over power
MOSFET and BJT

It has a very low on-state voltage drop due to
conductivity modulation and has superior on-state
current density. So smaller chip size is possible
and the cost can be reduced.
Low driving power and a simple drive circuit due
to the input MOS gate structure.
It can be easily controlled as compared to current
controlled devices (thyristor, BJT) in high voltage
and high current applications.
Wide SOA. It has superior current conduction
capability compared with the bipolar transistor. It
also has excellent forward and reverse blocking
capabilities.
Disadvantage of IGBT
Switching speed is inferior to that of a Power
MOSFET and superior to that of a BJT.
The collector current tailing due to the
minority carrier causes the turnoff speed to be
slow.
There is a possibility of latch up due to the
internal PNPN thyristor structure.
Applications of IGBT

The IGBT is suitable for many applications in power
electronics, especially in Pulse Width Modulated
(PWM)
Servo and three-phase drives requiring high dynamic
range of control and low noise.
It also can be used in Uninterruptible Power Supplies
(UPS),
Switched-Mode Power Supplies (SMPS), and other
power circuits requiring high switch repetition rates.
IGBT improves dynamic performance and efficiency
and reduced the level of audible noise. It is equally
suitable in resonant-mode converter circuits.
Optimized IGBT is available for both low conduction
loss and low switching loss
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