Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
D
i
D
N
n
p
N n
2
N-type material
Diodes
N region has lots of free electrons
P region has lots of holes
At equilibrium: total number positive and negative
charges is the same (@ room temp)
At the pn junction the electrons and holes with different
charges form an electric field
In order to move electrons through the electric field
(generate current) we need some force (voltage)
This potential difference is called barrier voltage
When enough voltage is applied such that electrons are
moved then we are biasing the diode
Two layers of positive and negative charges for depletion
region the region near the pn-junction is depleted of
charge carriers)
Biasing Types of a Diode
Forward bias
Bias voltage V
Bias
> barrier voltage V
Bar
Reduction in + and ions smaller
depletion region
V
Bar
Depends on material, doping, temp,
etc. (e.g., for silicon it is 0.7 V)
Reverse bias
Essentially a condition that prevents
electrons to pass through the diode
Very small reverse break down current
Larger depletion region is generated
Cathode
n region
Anode
p region
Connected to the
negative side of
the battery
Connected to the
positive side of the
battery
A K
Biasing Types of a Diode (Forward)
Cathode
n region
Anode
p region
A K
Moving
electrons
Small dynamic resistance
VBias
n p
Conventional
Current Flow
Conventional
Current Flow
I (Forward)
Very Small
Moving
Electrons:
Reverse Current)
Biasing Types of a Diode (Reverse)
Cathode
n region
Anode
p region
A K
Large resistance
VBias
n p
Conventional
Current Flow
Holes are left behind;
large depletion region
Instant pull of
electrons
I-V Characteristic of a Diode
Forward bias: current passes through
The knee is where VBias=VBar
At point B VBias < VBar Very little current
Note that at the knee the current increases rapidly but V(forward) stays
almost the same
Reveres bias: No current passes through
When VBias < VBar Very little current (mu or nano Amp)
At the knee, the reverse current increases rapidly but the reverse
voltage remains almost the same
Large reverse current can result in overheating and possibly damaging
the diode (V=50V or higher typically)
Overheating results from high-speed electrons in the p-region
knocking out electrons of atoms in n-region from their orbit to the
conduction band
Hence, we use limiting resistors
Electrons moving
from n to p region