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MOSFET
Now add source and drain to MOS capacitor. The new structure is called MOS transistor. Two types of MOS transistors : NMOS and PMOS
The distance between S and D is called channel length L and lateral extent of channel is width W. Both W and L are very important parameters. The channel is formed through applied gate voltage between S and D.
MOSFET Types
Figure: n-Channel Enhancement MOSFET showing channel length L and channel width W.
Lecture-3@IIITAllahabad
Lecture-3@IIITAllahabad
Lecture-3@IIITAllahabad
Lecture-3@IIITAllahabad
Lecture-3@IIITAllahabad
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V-I Characteristics
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V-I Characteristics
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P channel
The physical structure of a PMOS is identical to a NMOS except that the semiconductor types are interchanged, i.e., body and gate are made of n-type material and source and drain are made of p-type material and a p-type channel is formed.
As the sign of the charge carriers are reversed, all voltages and currents in a PMOS are reversed. By convention, the drain current is owing out of the drain as is shown. With this, all of the NMOS discussion above applies to PMOS as long as we multiply all voltages by a minus sign:
Next class
Consider NMOS circuit below with K = 0:25 mA/V2 and Vt = 2 V. Find vo when vi = 0, 6, and 12 V for RD = 1 K and VDD = 12 V.
Threshold voltage
Dependence Numerical Second order effects Strong and Weak ones and zeros . DC characteristics of inverter Realization of circuits using CMOS [Gates, Mux, Flip flops (sequential)]