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1
TRANSISTOR STRUCTURE
The basic structure of the bipolar junction transistor (BJT)
determines its operating characteristics.
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PHYSICAL REPRESENTATION OF BJTs
Physically BJTs are of two types. One type consists of two n
regions separated by a p region npn, and the other type
consists of two p regions separated by an n region pnp
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PHYSICAL REPRESENTATION OF BJTs
The pn junction joining the base region and the emitter region is
called the base emitter junction. The pn junction joining the base
region and the collector region is called the base collector
junction
The base region is lightly doped and very thin compared to the
heavily doped emitter and the moderately doped collector
regions
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SCHEMATIC SYMBOL FOR BJTs
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BASIC TRANSITOR OPERATION
In order to operate transistor as an amplifier properly , the two
pn junctions must be correctly biased with external dc
voltages. Figure shows the proper biasing arrangement for
both npn and pnp transitors for active operation as an
amplifier. In both cases the base emitter (BE) junction is
forward biased and the base collector (BC) junction is
reversed biased
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ILLUSTRATION OF BJT ACTION
To illustrate transistor action, let's look inside the npn
transistor.
• The base region is lightly doped and very thin so that it has a
limited number of holes. Thus, only a small percentage of all
the electrons flowing through the BE junction can combine
with the available holes in the base. These relatively few
recombined electrons forms the small base electron current.
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ILLUSTRATION OF BJT ACTION
• Most of the electrons flowing from the emitter into base
region do not recombine but diffuse into the BC depletion
region because they are pulled through the reverse biased
BC junction by the electric field set up by the force of
attraction between positive and negative ions.
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ILLUSTRATION OF BJT ACTION
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TRANSISTOR CURRENTS
The directions of the currents in an npn and pnp transistor and
its schematic symbol are shown as;
The above figures shows that the emitter current (IE) is the sum
of collector current (IC) and the base current (IB) ,expressed as
follow
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TRANSISTOR DC BIASED CIRCUITS
When a transistor is connected to dc bias voltages, as shown
in figure. VBB forward biases the base emitter junction, and
Vcc reverse biases the base collector junction. Generally,
VBB is very small as compared to Vcc.
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DC BETA (βDC )
Definition:
“The ratio of the dc collector current (IC) to the dc base current
(IB) is the dc beta (βDC).” It is also called the gain of a
transistor.
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DC ALPHA (αDC )
Definition:
“The ratio of the dc collector current (IC) to the dc emitter
current (IE) is the dc alpha (αDC).” The alpha is a less used
parameter than beta in transistor circuits.
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EXAMPLE 4-1
SOLUTION
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TRANSISTOR CURRENT AND VOLTAGE
ANALYSIS
Three transistor dc currents and three dc voltages can be
identified as
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TRANSISTOR CURRENT AND VOLTAGE
ANALYSIS
VBB forward-biases the base emitter junction, and Vcc
reverse-biases the base collector junction. When the base
emitter junction is forward biased, it is like a forward biased
diode and has a nominal forward voltage drop of
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TRANSISTOR CURRENT AND VOLTAGE
ANALYSIS
• Since the emitter is at ground ,by kirchhoff’s voltage law, the
voltage across RB is
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TRANSISTOR CURRENT AND VOLTAGE
ANALYSIS
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EXAMPLE 4-2
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SOLUTION
As we know that .We can calculate the base,
collector and emitter current as
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COLLECTOR CHARACTERISTIC
CURVES
• Collector characteristic curves plotted between collector
current IC versus VCE for specified values of base current IB
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COLLECTOR CHARACTERISTIC
CURVES
The collector characteristic curve divided into three regions
o Saturation region
o Active region
o Cutoff region
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SATURATION REGION
• Both BE (Base Emitter) and BC (Base Collector) are forward
biased
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CIRCUIT DIAGRAM FOR SATURATION
REGION
• When Base Emitter (BE) junction becomes forward biased the
base current is increased
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ACTIVE REGION
• BE (Base Emitter) is forward biased and BC (Base Collector) is
reversed biased
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CUTOFF REGION
• Both BE (Base Emitter) and BC (Base Collector) are reverse
biased
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CIRCUIT DIAGRAM FOR CUTOFF
REGION
• The base terminal open, resulting in base current of zero
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EXAMPLE 4-3
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SOLUTION
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DC LOAD LINE
• A DC load line drawn on a family of curves connecting the cutoff
point and saturation point
• Top of load line is at saturation where IC=IC (sat) & VCE = VCE(sat)
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EXAMPLE 4-4
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SOLUTION
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MAXIMUM TRANSISTOR RATING
• Typically , maximum rating are given for collector to base voltage
, collector to emitter voltage , emitter to base voltage,collector
current & power dissipation
• The product of VCE and IC must not exceed the maximum power
dissipation, (means both cannot be maximum at the same time)
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EXAMPLE 4-5
SOLUTION
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DC QUANTITIES
• DC quantities always carry an uppercase roman subscript. For
example, IB ,IC and IE are the dc transistor currents.
• VBE ,VCB and VCE are the dc voltages from one transistor
terminal to another.
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AC QUANTITIES
• AC quantities always carry an lowercase roman subscript. For
example, Ib ,Ic and Ie are the ac transistor currents.
• Vbe ,Vcb and Vce are the ac voltages from one transistor terminal
to another.
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AMPLIFICATION
Definition:
“Amplification is the process of linearly
increasing the amplitude of an electrical
signal”
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TRANSISTOR AMPLIFICATION
• A transistor amplifies current because the collector current is
equal to the base current multiplied by the current gain β. i.e.
(Ic = βIB)
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TRANSISTOR AMPLIFICATION
• The ac input voltage produces an ac base current which results in
a much larger ac collector current
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TRANSISTOR AMPLIFICATION
• The forward biased base emitter (BE) juction presents a very low
resistance re′ to the ac signal.
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TRANSISTOR AMPLIFICATION
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CONCLUSION
• We can say that the transistor produces amplification in the
form of gain, which is dependent on the values of Rc and re′
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EXAMPLE 4-8
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SOLUTION
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TRANSISTOR AS A SWITCH
Transistor used as an electronic switch into two regions
o Cutoff region
o Saturation region
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CUTOFF REGION
In cutoff region, the transistor behaves as an open switch
because base emitter (BE) juction is reversed biased which
cause an open action between collector and emitter
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CONDITION IN CUTOFF REGION
By neglecting the leakage current , all of the currents
are zero and VCE is equal to VCC
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SATURATION REGION
In saturation region, the transistor behaves as a close switch
between collector and emitter because both junctions base
emitter (BE) and base collector (BC) are forward biased which
cause the collector current to reach its saturation value
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CONDITION IN SATURATION REGION
When transistor is saturated, the formula for collector
saturation current is
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SOLUTION
51
SOLUTION
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