Topic 1 Diode

Malaysian Institute of Aviation Technology
ELECTRONIC FUNDAMENTAL (MECHANICAL) AGD 20102

Course Outline
Chapter 1 Diodes
Objectives
After studying the material in this chapter, you should be able to:
1. 1. Describe basic atomic structure of semiconductor material and doping process. Identify the terminals of a pn-junction diode, given the schematic symbol for the component. Analyze the schematic diagram of a simple diode circuit to determine: Whether the diode is conducting The direction of current through any conducting diode. List the main parameters of the pn-junction diode, and explain how each limits the use of the component.
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1.
1.
Conductor, Insulator & Semiconductor

Conductor - material that allows electrons to flow, e.g.: gold, silver, copper and aluminum
Insulator - material that restricts current flow, e.g. : wood, plastic Semiconductor - material that is between conductor and insulator in its ability to conduct electrical current, e.g.:. germanium or silicon
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Introduction to Semiconductor Material

The valence shell (outermost shell) determines the electrical and chemical properties of an atom:
Conductors
: Three or less electrons in the valence shell
Semiconductor : Four electrons in the valence shell
Insulator
: Five or more electrons in the valence shell

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Energy diagrams for the three types of solids
Energy gap The difference between the energy levels of any two orbital shells. Conduction band The band outside the valence shell.
The atomics structure of silicon and germanium:
Covalent Bonding
A means of holding atoms together by sharing valence electrons.
The center atom (at right) is electrically stable because its covalent bond is complete. An intrinsic (pure) silicon is one that has no impurities .
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Doping
Doping is the process of adding impurity elements to intrinsic (pure) semiconductors to increase and control conductivity within the material.
By adding impurities, n-type and p-type extrinsic semiconductive material can be produced
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Elements In Doping Process

Trivalent element element that has three valence electrons
p-type material A semiconductor that has added trivalent impurities. Pentavalent element One that has five valence electrons
n-type material A semiconductor that has added pentavalent impurities.

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N-type Material
A semiconductor that has added pentavalent impurities, eg: arsenic,phosphorus The pentavalent atom (As) has a fifth valence electron that is not a part of the covalent bond. Relatively little energy is required to force the excess electron into the conduction band. Electrons are called majority carrier and holes are minority carrier.
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P-type Material
A semiconductor that has added trivalent impurities, eg: aluminium,indium, The bond requires one more valence electron than the trivalent atom (Al) is capable of providing. The electron shortage results in the bond having a valence-band hole. Converse of n-type material, holes are called majority carriers and electrons are minority carriers.
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The PN Junction
At the instant of the pn junction formation, free electrons near the junction in the n-region begin to diffuse across the junction into p-region where they combine with holes near the junction.
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For every electron that diffuses across the junction and combines with hole, a positive charge is left in the n region and negative charge is created in the p region, forming a barrier potential. This action continues until the voltage of the barrier repels further diffusion.
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DIODE STRUCTURE
Semiconductor diode is formed by joining the p-type and n-type material with conductive contacts and wire leads connected to each region.
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Diode
A two-electrode (two-terminal) device that acts as a one-way conductor. The n region is called the cathode and p region is called anode.
Symbol for diode

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Examples of diode
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Bias
A potential applied to a pn junction to obtain a desired mode of operation.
Forward bias A potential used to reduce the resistance of a pn junction. Reverse bias A potential used to increase the resistance of a pn junction.
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Forward Voltage
Forward voltage (VF) is the voltage across a forward biased pn junction.
VF 0.7 V (for silicon) VF 0.3 V (for germanium)
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Forward Biased pn- junction Diodes

The component is fwd biased so that the cathode is more negative than the anode. The voltage across the diode exceeds its barrier potential. The diode conducts fully when VF is approximately 0.7 V (for silicon) or 0.3 V (for germanium). The value of IF depends on the circuit voltage and resistance values.
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Reverse Biased pn-Junction Diodes

The component is reverse biased so that the cathode is more positive than the anode. The voltage across the diode is approximately equal to the applied voltage (V ). The diode current is approximately 0 A (as indicated by the ammeter).
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Diode Characteristics Curve
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VF and Circuit Analysis

V V 0.7 V R S V 0.7 V S IT 4 .3 mA R
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For the diode below determine VD, VR and ID
V V 0.7 V 7.3 V R S
VD = 0.7V
V V 0.7 V 7.3 V R S
V 0.7 V S I 3 . 32 mA T R
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Repeat Example with the diode reverse. Thus the equivalent circuit is
Find the value of VD VD = E = 8 V
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If the diode is biased with the voltage source less than VD, the diode also acting like open circuit
Diode circuit
Equivalent circuit
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Determine Vo, I1, ID1and ID2 for the parallel diode below
Since the source voltage is greater than the diode then the current flow and the voltage across diode is 0.7 V, thus Vo is 0.7 V The current is
V E V ( 10 V 0 . 7 V ) R D I 28 . 18 mA 1 R R0 . 33 k 27
Continue.
Since diodes are similar thus the current will be the same , then
I 1 I I 14 . 09 mA D 1 D 2 2
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Parameters of the PN-Junction Diode
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Diode Characteristics Curve
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Peak Reverse Voltage (VRRM )

VRRM is the maximum reverse voltage that wont force a pn junction to conduct. When VR > VRRM , diode reverse current (IR) increases rapidly as the depletion layer breaks down. VRRM is a diode parameter that can be found on the component spec sheet.
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Forward Current and Power Dissipation

Average Forward Current (I0 ) The maximum allowable value of dc forward current for a diode. Forward Power Dissipation ( PD(max) ) The maximum possible power dissipation of the forwardbiased diode. I0 and PD(max) are diode parameters that are listed on the component spec sheet.
P D (max) I0 V F
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Component Substitution
A substitute diode can be used in a circuit if:
Its VRRM rating is at least 20% greater than the maximum reverse voltage produced by the circuit.
Its I0 rating is at least 20% greater than the average (dc) value of IF generated by the circuit. Its PD(max) rating is at least 20% greater than the value of PF required by the circuit.
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Diode Reverse Current (IR )

The low-level current through a reverse biased pn junction, made up of: Reverse saturation current (IS) A current caused by thermal activity in a reverse biased diode.
Surface leakage current (ISL) A current along the surface of a reverse-biased diode.
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Temperature Effects on IF and VF

When temperature increases: IF increases (at a specified value of VF) VF decreases (at a specified value of IF)
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Temperature Effects on IR
IR increases with increases in temperature.
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Diode Resistance Test
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Meter Diode Test Function
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Summary
Difference between conductor, insulator & semiconductor? What is doping process? Majority carrier for P & N material? Identify forward & reverse bias? What is the value of diode resistance when fwd bias?
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Diode Applications
Objectives After studying the material in this chapter, you should be able to: 1. Identify different types of rectifier 2. Calculate the the peak and dc (average) load voltage and current values for half and full wave rectifier. 3. Describe of the operation of full wave rectifier. 4. Discuss the effects that filtering has on the output of a rectifier. 5. Describe basic operation of rectifier of three phase
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Half-wave Rectifiers
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Half-wave Rectifiers
Half-wave rectifier A diode placed in series between a transformer (or ac line input) and its load.
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Positive Half-wave Rectifiers

This circuit converts an ac input to a series of positive pulses.
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Average Load Voltage and Current

Average voltage (Vave) The dc equivalent of a voltage waveform. Average current (Iave) The dc equivalent of a current waveform. For the output from a half-wave rectifier:
1
Vave
Vpk
Ipk Iave
fo fi
44
Negative Half-wave Rectifiers

This circuit converts an ac input to a series of negative pulses.
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Peak Inverse Voltage (PIV)

Peak inverse voltage (PIV) The maximum diode reverse bias produced by a given circuit.
For the diode in a half-wave rectifier:
PIV V S(pk)
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Half-wave Rectifier With Capacitive Filter
PIV 2 V S(pk )
Initial Charging of the capacitor
The capacitor discharging

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Half-wave rectifier with and without filtering
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Full-wave Rectifier
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Full-wave Rectifier
A full-wave rectifier allows unidirectional current to the load during the entire input cycle
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Full-wave Rectifier Operation

Diodes
conduct during alternate half cycles of the input signal. is approximately half the value of VS(pk). circuit produces two positive half-cycles for each input cycle.
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VL(pk)
The
Average Load Voltage and Current

Average voltage (Vave) The dc equivalent of a voltage waveform. Average current (Iave) The dc equivalent of a current waveform. For the output from a full-wave rectifier:
1
V ave
2 V pk
Iave
2 Ipk
f o 2 fi
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Peak Inverse Voltage (PIV)

Peak inverse voltage (PIV) The maximum diode reverse bias produced by a given circuit.
For the diode in a full-wave rectifier:
PIV V 0 . 7 S (pk)
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Full-Wave Bridge Rectifiers

The most commonly used because: It does not require the use of a center-tapped transformer. It can be coupled directly to the ac power line. It produces a higher dc output than a full-wave center-tapped rectifier (nearly twice)
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Bridge Rectifier Operation

Conduction alternates between two diode pairs.
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Calculating load voltage and current relationships

V L (pk ) V S (pk) 1 . 4 V V ave I ave 2V L (pk )
V ave RL
fo 2 fi PIV V S(pk) 0 . 7 V
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Three Phase Half Wave Rectifier
Output ripple frequency = 3 times the supply frequency

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Three Phase Full Wave Rectifier

x
Output ripple frequency = 6 times the supply frequency

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Other Applications of Diode

Clipping or limiting
used to clip off portions of signal voltages (above or below certain levels).
Clamping
adds a DC voltage to an ac voltage. Also known as DC restorer Change the reference level of waveform without reducing its amplitude (move up or down)
Voltage Multiplier
use clamping action to increase peak rectified voltages without increasing input transformers rating. typically used in a High Energy Ignition Unit (HEIU)
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Summary
Half-wave Rectifiers Full-wave Rectifier Bridge Rectifiers Three Phase Rectifiers
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Thyristors, Optoelectronic & Special Devices
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Objectives
After studying the material in this chapter, you should be able to explain of the following devices: 1. 2. 3. 4. 5. 6. 7. 8. 9. SCR Triac Diac LED Photodiode Zener Diode Schottky Diode Varactor Diode Varistor Diode
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Thyristors
A semiconductor that used for switching purposes Replaced solenoid or relay for controlling the load current to motors. Advantage: no moving parts, so prevent from wear, corrosion & arching. Two common type : SCR (silicon controlled rectifier) and TRIAC (triode AC semiconductor)
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Silicon-Controlled Rectifiers (SCRs)

Silicon-controlled rectifier (SCR) A three-terminal device.
The third terminal, called the gate, provides an additional method for triggering the device. Allow current to flow once the certain level of gate signal is achieved.
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SCR Triggering
A positive gate pulse triggers the SCR into conduction.
Once conduction begins, the gate input signal has no effect on the device. The SCR is driven into cutoff by anode current interruption or forced commutation.
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SCR Operating Curve
Holding current
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Graphs of SCR Inputs & Outputs

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SCR can be turn off by:

The device is reverse biased The supply removed The voltage across the device is reduced so that the current falls below its holding value
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Triacs
Triac A bidirectional thyristor whose forward and reverse characteristics are identical to the forward characteristics of the SCR.
Also referred to as triodes and bidirectional triode thyristors.
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Triac Construction
The primary conducting terminals are referred to as main terminal 1 (MT1) and main terminal 2 (MT2). The triac is essentially complementary SCRs connected in parallel.
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Triac Operating Curves
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Triac Triggering
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Controlling Triac Triggering
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Diacs
Basically a TRIAC without a gate terminal Designed to conduct at specific voltage , and normally used as a trigger for another device such as Triac. Compensated of nonsymmetrical trigger characteristic of Triac.
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Diac Operating Curves
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Thyristor Applications
Ideal for switching warning circuits on aircraft. Example: Engine warning light of excessive temperature in turbine engine will illuminate until pilot interrupts the light circuit. Controlling large amount of current flow to motor, heater or lighting circuit.
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Optoelectronic
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Light Emitters and Detectors

Light emitter
Optoelectronic devices that produce light. The LED is an example of a light emitter.
Light detector
Optoelectronic devices that respond to light. Example : photodiodes
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Light
Light Electromagnetic energy that falls within a specific range of frequencies.
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Wavelength
Wavelength () The physical length of one cycle of a transmitted electromagnetic wave.
c f
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Light Intensity
Light intensity The amount of light per unit area received by a given photodetector. Also called irradiance.
Light intensity decreases as the distance between the light emitter and detector increases
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Light Emitting Diode (LED)

Commonly used for indicator lamps and readout display in a wide variety of equipment. Most common application : seven segment display.
Seven segment display component
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Light Emitting Diode (LED)

Made of semiconductor compound gallium arsenide phosphide. Emit light when fwd biased and light emitted direct proportional to current flow. Color obtained depending on the composition and impurity content of the compound
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Photodiodes
Photodiode A diode whose reverse conduction is lightintensity controlled.
Light current (IL) The reverse current with an active light input present. Dark current (ID) The reverse current with no active light input present.
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Photodiode Ratings
Wavelength of peak spectral response (S) The wavelength that causes the strongest response in a photodetector. Sensitivity The response of a photodetector to a specified light intensity, measured in mA/mW/cm2. Spectral response A measure of a photodetectors response to a chance in input wavelength.
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Photodiode Application
Detect changes in light intensity Example : As ambient light detector in the cockpit to automatically adjust the brilliance of instrument readouts for changing light conditions.
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Special Devices
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Zener Diode
Will conduct electricity under certain voltage conditions. Ideal for use in voltage regulator circuit. Designed to operate at or above its breakdown voltage.
Anode
Cathode
Symbol of zener diode
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Graph of Reverse Biased
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Schottky Diode
Semiconductor diode with a low forward voltage drop and a very fast switching action. Capable of operating at frequency up to 20Ghz. Lower power loss across the device in forward biased. Most important application in digital computer.
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Varactor
A varactor diode is a variable-capacitance diode. The capacitance of the junction changes with the amount of reverse voltage. As reverse bias voltage increases, depletion region widens, capacitance become smaller. Generally used in electronic tuning circuits and communication systems.
Symbol of Varactor
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Varistor
Metal Oxide Varistor(MOV) is a voltage dependent resistor. Have an electrical behavior similar to back to back zener diodes High voltage resistor breakdown and become conductor (constant current diode) Used for transient voltage suppression, voltage stabilization and switch contact protection
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Summary
Thyristors Optoelectronic Special Devices
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Topic 1 Diode

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Malaysian Institute of Aviation Technology

ELECTRONIC FUNDAMENTAL (MECHANICAL) AGD 20102

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Conductor, Insulator & Semiconductor

Malaysian Institute of Aviation Technology

Introduction to Semiconductor Material

: Three or less electrons in the valence shell

Semiconductor : Four electrons in the valence shell

: Five or more electrons in the valence shell

Malaysian Institute of Aviation Technology

Energy diagrams for the three types of solids

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

The atomics structure of silicon and germanium:

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Elements In Doping Process

n-type material A semiconductor that has added pentavalent impurities.

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Symbol for diode

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

VF 0.7 V (for silicon) VF 0.3 V (for germanium)

Malaysian Institute of Aviation Technology

Forward Biased pn- junction Diodes

Malaysian Institute of Aviation Technology

Reverse Biased pn-Junction Diodes

Malaysian Institute of Aviation Technology

Diode Characteristics Curve

Malaysian Institute of Aviation Technology

VF and Circuit Analysis

Malaysian Institute of Aviation Technology

For the diode below determine VD, VR and ID

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Parameters of the PN-Junction Diode

Malaysian Institute of Aviation Technology

Diode Characteristics Curve

Malaysian Institute of Aviation Technology

Peak Reverse Voltage (VRRM )

Malaysian Institute of Aviation Technology

Forward Current and Power Dissipation

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Diode Reverse Current (IR )

Malaysian Institute of Aviation Technology

Temperature Effects on IF and VF

Malaysian Institute of Aviation Technology

Malaysian Institute of Aviation Technology

Diode Resistance Test

Malaysian Institute of Aviation Technology

Meter Diode Test Function

Malaysian Institute of Aviation Technology