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OBJECTIVE
Plot the graph V vs. I for forward bias and reverse bias. Find the DC and AC resistance for forward bias.
APPARATUS REQUIRED
SL . NO 1 2 3 4 COMPONENT/EQUIPMENT Micro lab kit DC power supply Multi meter Diode IN4007 0-30 volt SPECIFICATION QUANTITY 1 2 2 1
5
6 7
Zener diode
Resistor Connecting wires
6.7 V
1 K
1
1 As required
THEORY
SEMICONDUCTOR DIODE:
Diode is a two terminal electronic component with asymmetric conductance, it has low resistance to current flow in one direction . There are two types of semiconductor diode:i) P TYPE ii) N -TYPE
TYPES OF BIASING A. No biasing B. Forward biasing C. Reverse biasing
DIODES
FORWARD BIASING(VD<0v)
I. A forward bias condition is established by applying the +ve potential to the p-type material and ve potential to the n-type material. II. The application of VD will pressure the electrons in the n-type and holes in the p-type material to recombine with the ions near the boundary and reduce the depletion layer. III. As the applied bias increases the depletion region will continue to reduce in width until a flood of electrons will pass through the junction. IV. As a result an exponential rise in current occurs.
REVERSE BIASING(Vd<0v)
I. For reverse biasing +ve and ve terminals are connected to the n-type and p-type materials respectively. II. As a result the no. of uncovered +ve ions in depletion region of the n-type material will increase due to the large no. of free electrons drawn to the +ve potential of the applied voltage. III. Similarly the no. of uncovered ve ions will increase in the p-type material.Hence the width of the depletion region increases leading to behave like a barrier for majority carriers. IV. When reaches its max level the saturation comes and at this level there occur the significant change even if with the increase of reverse of the reverse bias potential.
Shockleys equation
diode
VT =KT/q
K = Boltzmann's constant T= absolute temperature q = magnitude of electronic charge
MODEL GRAPH
PROCEDURE
FORWARD BIASING
I. II. Connect the circuit as per the circuit diagram. Vary the power supply voltage(Vi) 0-5 in such a way that the readings are taken in step of 0.2 V.
REVERSE BIASING:
I. II. Connect the circuit as per the circuit diagram. Vary the power supply voltage(Vi) 0-15 in steps of 1 volt.
OBSERVATION
FORWARD BIASING
SL NO I/P VOLTAGE (Vi) Forward voltage ( Vr) Forward current (If)
REVERSE BIASING
SL NO I/P VOLTAGE(V i) Reverse voltage ( Vr) Reverse current( Ir)
CALCULATION:
Dynamic resistance
Static resistance
PRECAUTION
I. II. Short circuit should be avoided. Handle the materials carefully.
CONCLUSION
EXPERIMENT NO- 4
AIM OF THE EXPERIMENT
Diode as half wave and full wave rectifier. Calculation of D.C current and ripple factor for resistive load and capacitive load.
OBJECTIVES:
I. II. Find out the average value, RMS value and Ripple factor. Trace the I/O wave forms for half wave and full wave rectifier.
APPARATUS REQUIRED
S L NO 1 2 3 4 5 6 7 COMPONENT/EQUIPMENT Micro lab kit CRO CRO probes Diode Resistor Capacitors Connecting wires IN4007 1K 470F 20 MHZ SPECIFICATION QUANTITY 1 1 2 4 1 1 As per requirement
THEORY
RECTIFIER:
When a diode is employed in the rectification process it is termed as a rectifier. The power gain is more as compared to the diodes used in the other purposes. Generally the sinusoidal and square wave signals are applied to it. There are two types of rectifires i) HALF WAVE RECTIFIER ii) FULL WAVE RECTIFIER
CIRCUIT DIAGRAM
CIRCUIT DIAGRAM OF HALF WAVE RECTIFIER
PROCEDURE
I. II. Connect the circuit as per the circuit diagram. Observe the I/O signal of the CRO.
III. Measure the input voltage and the average and r.m.s value of output voltage for half wave and full wave rectifier. IV. Calculate the ripple factor. V. Trace the output wave forms with and without capacitor
filter.
WAVE FORMS
OBSERVATION
PARAMETERS H /W RECTIFIER F/W RECTIFIER(CT) F/W RECTIFIER (BRIDGE)
Vm
Vavg
Vrms
RIPPLE FACTOR
CALCULATION
PRECAUTION:
Short circuit should be avoided. Handle the materials carefully.
CONCLUSION