Types of Extrinsic Semiconductors

Donor or N-type
If a pentavalent atom (e.g., As, Sb, P) replaces the tetravalent Ge or Si atoms in the crystal lattice, donor or Ntype Extrinsic type Semiconductor is formed.

Acceptor or P-type
If a trivalent atom (e.g. B, Ga, In) replaces tetravalent Ge or Si atoms in the crystal lattice, acceptor or P-type Extrinsic type Semiconductor is formed.

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Extrinsic Semiconductors

Donor or N-type Semiconductors

Four of the five electrons make the covalent bonds. The fifth is unbound and available as carrier of current. The energy required to detach this fifth electron from the atom is of the order of only 0.01 eV for Ge and 0.05 eV for Si. Not only the number of electrons increases in the n-type semiconductor, but the number of holes decreases below the intrinsic value.
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EC-EF = kT ln (NC/ND)
Where NC = effective density of state function in conduction band

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Charge Equation

ND + p = n (+ve ions) (holes) (electrons) Hence, n >> p

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Representation of N-type Semiconductor

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Acceptor or P-type Semiconductors

Only three of the covalent bonds can be filled. There remains a vacancy in the fourth bond. Is this vacancy a hole ? Ans. No. The single electron in the incomplete bond has a great tendency to snatch an electron from a neighbouring bond. Only a little energy ( 0.01 eV) is needed for the electron from a neighbouring bond to jump to this vacancy.
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When this happens a hole is created. Not only the number of holes increases in the P-type semiconductor, but the number of electrons decreases below the intrinsic value.

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EF-EV = kT ln (NC/ND)
Where NV = effective density of state function in valance band

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Charge Equation

NA + n = p (-ve ions) (electrons) (holes) Hence, p >> n

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Representation of P-type Semiconductor

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The Mass Action Law

Adding N-type impurities decreases the number of holes below that in the intrinsic semiconductor. Doping with P-type impurities decreases the concentrations of free electrons below that in the intrinsic semiconductor. The product of the free negative and positive concentration is constant and is independent of the amount of donor and acceptor impurity doping, i.e., n p = ni2
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Charge Densities In Semiconductors

Suppose, Concentration of electrons in N-type material = nn Concentration of electrons in P-type material = np Concentration of holes in N-type material = pn Concentration of holes in P-type material = pp Concentration of donor atoms = Positive charge contributed by donor ion = ND Concentration of acceptor atoms = Negative charge contributed by acceptor ion = NA

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In general, The electron and hole concentrations in the relation np = ni2 can further be interrelated by the law of electrical neutrality. Total positive charge density = ND+ p Total negative charge density = NA+ n According to electrical neutrality, ND + p = NA+ n

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In case of N-type material having NA= 0 and nn>>pn, The equation for electrical neutrality becomes, ND+ pn= NA+ nn i.e. nn ND In an N-type material the free electron concentration is approximately equal to the density of donor atoms. Concentration of holes in N-type semiconductor 2 is given by n

pn

ND
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In case of P-type material having ND= 0 and pp >> np, The equation for electrical neutrality becomes, ND+ pp= NA+ np i.e. pp NA In an P-type material, the hole concentration is approximately equal to the density of acceptor atoms. Concentration of holes in semi-conductor is given by 2

ni np NA

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 It is possible to add donors to P-type crystal, or conversely, to add acceptors to N-type crystal. What happens if equal concentration of donors and acceptors are added to an intrinsic semiconductor ? Ans. It remains intrinsic. ND = NA and n = p
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What is Diffusion ?
Suppose that there is a concentration gradient in space in an ensemble of particles. The particles tend to move from a region of higher concentration to a region of lower concentration. This is done so as to destroy the nonuniformity of the concentration. This phenomenon is known as Diffusion.
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Diffusion Current Density

It is possible to obtain non-uniform concentration of electrons (or holes) in semiconductors (as we shall see in a PNJunction). Let the concentration of holes p vary with the distance x in semiconductor. Let the concentration gradient be dp/dx. If dp/dx is negative, obviously the hole concentration decreases with increase in x.
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 Although the holes move in a random fashion due to their thermal energy, a diffusive flow of holes exist in the positive x-direction. This flow of holes results in a diffusion current in the positive x-direction. Note that the diffusion does not arise from the mutual repulsion among charged particles of like sign, but it is the result of a statistical phenomenon.
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Diffusion Current Density

Diffusion hole-current density Jp is proportional to the concentration gradient dp/dx and is expressed as

dp J p qDp dx
This is sometimes referred to as Ficks Law. Here q is the magnitude of the electronic charge and DP is called the Diffusion Constant or Diffusion Coefficient or Diffusivity.

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Since dp/dx is negative, Jp is positive in the positive x-direction. In SI units, q is in coulomb, dp/dx is in m-4 and Jp is in A/m2. What are the units of diffusivity Dp ? Ans. m2/s.

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Similarly, the electron-current density Jn can be written by replacing p by n, Dp by Dn and the minus sign by the plus sign, as

dn J n qDn dx
It is possible for both a potential gradient and concentration gradient to exist simultaneously along the positive xdirection within a semiconductor.
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In such a situation, the total current is the sum of the drift current and the diffusion current. Thus,

dp J p pq p E qDp dx dn J n nq n E qDn dx
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Einstein Relationship
Since both diffusion and mobility are statistical thermodynamic phenomena, D and are not independent. The relationship between them is given by the Einstein equation:

Dp

Dn

VT
equivalent of

where VT is the voltage temperature, defined by,

kT T VT q 11600
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 Here k is the Boltzman Constant in J/K. (k is the Boltzman Constant in eV/K). =1.60X10-19k

At room temperature (300 K), VT = 0.026 V = 26 mV

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