Bipolar Junction Transistors Explained

Slide 8-1
Chapter 8 Bipolar J unction Transistors

Since 1970, the high density and low-power advantage of
the MOS technology steadily eroded the BJTs early dominance.

BJTs are still preferred in some high-frequency and analog
applications because of their high speed and high power output.
Question: What is the meaning of bipolar ?
Modern Semiconductor Devices for Integrated Circuits (C. Hu)
Slide 8-2
8.1 I ntroduction to the BJ T
I
C
is an exponential
function of forward
V
BE
and independent
of reverse V
CB
.
N
+
P N
emitter collector base
V
BE
V
CB
-
-
E
f n
E
f p
V
CB
V
BE
(a)
(b)
(c)
V
BE
I
C
0
V
CB
B
C E
E
c
E
v
E
f n
NPN BJT:
N
+
P N
E C
B
V
BE
V
CB

Emitter Base
Collector
Slide 8-3
Common-Emitter Configuration
Question: Why is I
B
often preferred as a parameter over V
BE
?
Slide 8-4
8.2 Collector Current
B B B
B
D L
L
n
dx
n d
t
'
=
'
2 2
2
t
B
: base recombination lifetime
D
B
: base minority carrier (electron)
diffusion constant
Boundary conditions :
) 1 ( ) 0 (
/
0
=
'
kT qV
B
BE
e n n
0 ) 1 ( ) (
0
/
0
~ ~ =
'
B
kT qV
B B
n e n W n
BC
N
+
P
N
emitter base collector
x
0

W
depletion layers
B
Slide 8-5
( )
B B
B
B
kT qV
B
L W
L
x W
e n x n
BE
/ sinh
sinh
) 1 ( ) (
/
0
|
|
.
|
\
|
= '
) 1 (
/
2
=
=
kT qV
B
iB
B
B
E
B E C
BE
e
N
n
W
D
q A
dx
dn
qD A I
) 1 (
/
=
kT qV
S C
BE
e I I
}
=
B
BE
W
B iB
i
B
kT qV
B
i
E C
dx
D
p
n
n
G
e
G
qn
A I
0
2
2
/
2
) 1 (
It can be shown
G
B
(s cm
4
) is the base Gummel number
8.2 Collector Current
n
i
2
N
B
-------e
qV
BE
kT
1
()
n '
n ' 0 ()
-------------
) 0 ( / ) ( n x n ' '
0
1
1
) 1 ( ) (
/
2
= '
kT qV
B
iB
BE
e
N
n
x n
x/
x / W
B
) / 1 )( 1 (
) / 1 )( 0 ( ) (
/
2
B
kT qV
B
iB
B
W x e
N
n
W x n x n
BE
=
' = '
Slide 8-6
At low-level injection,
inverse slope is 60 mV/decade
High-level injection effect :
8.2.1 High Level I njection Effect
0 0.2 0.4 0.6 0.8 1.0
10
-12

10
-10

10
-8

10
-6

10
-4

10
-2

V
BE
I
C

(
A
)

I
kF

60 mV/decade
At large V
BE,

B
N p n >>
'
=
'
p n p n = = ' = '
kT qV
i
BE
e n p n
2 /
~ ~
kT qV
i B
BE
e n p G
2 /
= kT qV
i
BE
e n I
2 /
C

When p > N
B
, inverse slope is 120mV/decade.

kT qV
i
kT E E q
i
BE
Fp Fn
e n e n np
/
2 / ) ( 2
= =

Slide 8-7
8.3 Base Current
Some holes are injected from the P-type base into the N
+
emitter.
The holes are provided by the base current, I
B
.
p
E
' n
B
'
W
E
W
B
(b)
emitter base collector contact
I
E

I
C
electron flow

+
hole flow
I
B
( a )
contact
Slide 8-8
}
=
E
BE
W
E iE
i
E
kT qV
E
i
E B
dx
D
n
n
n
G
e
G
qn
A I
0
2
2
/
2
) 1 (
Is a large I
B
desirable? Why?
8.3 Base Current
emitter base collector
contact
I
E

I
C
electron flow

+
hole flow
I
B
( a ) contact
) 1 (
/
2
=
kT qV
E E
iE E
E B
BE
e
N W
n D
q A I
For a uniform emitter,
Slide 8-9
8.4 Current Gain
B
C
F
I
I
|
How can |
F
be maximized?
Common-emitter current gain, |
F
:

Common-base current gain:

F
F
B C
B C
C B
C
E
C
F
E F C
I I
I I
I I
I
I
I
I I
|
|
o
o
+
=
+
=
+
=
=
1 / 1
/
It can be shown that
F
F
F
o
o
|
=
1
2
2
iE B B E
iB E E B
B
E
F
n N W D
n N W D
G
G
= = |
Slide 8-10
EXAMPLE: Current Gain
A BJT has I
C
= 1 mA and I
B
= 10 A. What are I
E
, |
F
and o
F
?
Solution:

9901 . 0 mA 01 . 1 / mA 1 /
100 A 10 / mA 1 /
mA 01 . 1 A 10 mA 1
= = =
= = =
= + = + =
E C F
B C F
B C E
I I
I I
I I I
o
|
We can confirm
F
F
F
|
|
o
+
=
1
F
F
F
o
o
|
=
1
and
Slide 8-11
8.4.1 Emitter Bandgap Narrowing
Emitter bandgap narrowing makes it difficult to raise |
F
by
doping the emitter very heavily.
2
2
iE
iB
B
E
n
n
N
N
|
To raise |
F
, N
E
is typically very large.
Unfortunately, large N
E
makes
2 2
i iE
n n >
(heavy doping effect).
kT E
V C i
g
e N N n
/
2

=
Since n
i
is related to E
g
, this effect is
also known as band-gap
narrowing.
kT E
i iE
gE
e n n
/
2 2
A
=
AE
gE
is negligible for N
E
< 10
18
cm
-3
,
is 50 meV at 10
19
cm
-3
, 95 meV at 10
20
cm
-3
,
and 140 meV at 10
21
cm
-3
.
Slide 8-12
2
2
iE
iB
B
E
n
n
N
N
|
To further elevate |
F
, we can raise n
iB
by
using an epitaxial Si
1-q
Ge
q
base.
With q = 0.2, E
gB
is reduced by 0.1eV and n
iE
2
by 30x.
8.4.2 Narrow-Bandgap Base and Heterojuncion BJT
Slide 8-13
Assume D
B
= 3D
E
, W
E
= 3W
B
, N
B
= 10
18
cm
-3
, and n
iB
2
= n
i
2
. What is
|
F
for (a) N
E
= 10
19
cm
-3
, (b) N
E
= 10
20
cm
-3,
and (c) N
E
= 10
20
cm
-3

and a SiGe base with AE
gB
= 60 meV ?
(a) At N
E
= 10
19
cm
-3
, AE
gE
~ 50 meV,

(b) At N
E
= 10
20
cm
-3
, AE
gE
~ 95 meV

(c)

2 92 . 1 2 meV 26 / meV 50 2
/
2 2
8 . 6
i i i
kT E
i iE
n e n e n e n n
gE
= = = =
A
13
8 . 6 10
10 9
2 18
2 19
2
2
=

= =
i
i
iE B
i E
B E
E B
F
n
n
n N
n N
W D
W D
|
2 2
38
i iE
n n = 24 =
F
|
2 meV 26 / meV 60 2
/
2 2
10
i i
kT E
i iB
n e n e n n
gB
= = =
A
237 =
F
|
EXAMPLE: Emitter Bandgap Narrowing and SiGe Base
Slide 8-14
A high-performance BJT typically has a layer of As-doped N
+

poly-silicon film in the emitter.
|
F
is larger due to the large W
E
, mostly made of the N
+
poly-
silicon. (A deep diffused emitter junction tends to cause emitter-
collector shorts.)
N-collector
P-base
SiO
2
emitter
N
+
-poly-Si
8.4.3 Poly-Silicon Emitter
Slide 8-15
Why does one want to operate BJTs at low I
C
and high I
C
?
Why is |
F
a function of V
BC
in the right figure?
|
F

From top to bottom:
V
BC
= 2V, 1V, 0V
8.4.4 Gummel Plot and |
F
Fall-off at High and Low I
c

Hint: See Sec. 8.5 and Sec. 8.9.
SCR BE current
Slide 8-16
8.5 Base-Width Modulation by Collector Voltage
Output resistance :
C
A
CE
C
I
V
V
I
r =
|
|
.
|
\
|
c
c
1
0
Large V
A
(large r
o
)
is desirable for a
large voltage gain
I
B3
I
C

V
CE
0
V
A
V
A
: Early Voltage
I
B2

I
B1

Slide 8-17
How can we reduce the base-width modulation effect?
N
+
P
N
emitter
base collector

V
CE

W
B 3
W
B 2
W
B 1
x
n'
}

V
CE 1
< V
CE 2
< V
CE 3
V
BE
Slide 8-18
The base-width modulation
effect is reduced if we

(A) Increase the base width,
(B) Increase the base doping
concentration, N
B
, or
(C) Decrease the collector doping
concentration, N
C
.

Which of the above is the most acceptable action?
N
+
P
N
emitter
base collector

V
CE

W
B 3
W
B 2
W
B 1

x
n'
}

V
CE 1
< V
CE 2
< V
CE 3
V
BE
Slide 8-19
8.6 Ebers-Moll Model
The Ebers-Moll model describes both the active
and the saturation regions of BJT operation.
I
B
I
C
0
V
CE
saturation
region
active region
Slide 8-20
I
C
is driven by two two forces, V
BE
and V
BC
.
When only V
BE
is present :
) 1 (
) 1 (
/
/
=
=
kT qV
F
S
B
kT qV
S C
BE
BE
e
I
I
e I I
|
Now reverse the roles of emitter and collector.
When only V
BC
is present :
) 1 )(
1
1 (
) 1 (
) 1 (
/
/
/
+ = =
=
=
kT qV
R
S B E C
kT qV
R
S
B
kT qV
S E
BC
BC
BC
e I I I I
e
I
I
e I I
|
|
|
R
: reverse current gain
|
F
: forward current gain
I
C
V
BC
V
BE
I
B

E

B C
Slide 8-21
) 1 ( ) 1 (
) 1 )(
1
1 ( ) 1 (
/ /
/ /
+ =
+ =
kT qV
F
S
kT qV
F
S
B
kT qV
R
S
kT qV
S C
BC BE
BC BE
e
I
e
I
I
e I e I I
| |
|
In general, both V
BE
and V
BC
are present :
In saturation, the BC junction becomes forward-biased, too.
V
BC
causes a lot of holes to be injected
into the collector. This uses up much
of I
B
. As a result, I
C
drops.
V
CE
(V)
Slide 8-22
8.7 Transit Time and Charge Storage

C
F
F
I
Q
t
When the BE junction is forward-biased, excess holes are stored
in the emitter, the base, and even in the depletion layers.
Q
F
is all the stored excess hole charge

t
F
determines the high-frequency limit of BJ T operation.
t
F
is difficult to be predicted accurately but can be measured.
Slide 8-23
8.7.1 Base Charge Storage and Base Transit Time

Lets analyze the excess hole charge and transit time in
the base only.
W
B
0
n
'
0
( )
n
iB
2
N
B
------- e
qV
BE
kT
1
( )
=

x
p' = n'
) 1 ( ) 0 (
/
2
=
'
kT qV
B
iB
BE
e
N
n
n
p n ' = '
B
B
FB
C
FB
B E FB
D
W
I
Q
W n qA Q
2
2 / ) 0 (
2
=
'
=
t
Slide 8-24
What is t
FB
if W
B
= 70 nm and D
B
= 10 cm
2
/s?
Answer:

2.5 ps is a very short time. Since light speed is
310
8
m/s, light travels only 1.5 mm in 5 ps.
EXAMPLE: Base Transit Time
ps 5 . 2 s 10 5 . 2
/s cm 10 2
) cm 10 7 (
2
12
2
2 6 2
= =
= =

B
B
FB
D
W
t
Slide 8-25
The base transit time can be reduced by building into the base
a drift field that aids the flow of electrons. Two methods:
Fixed E
gB
, N
B
decreases from emitter end to collector end.
Fixed N
B
, E
gB
decreases from emitter end to collector end.
dx
dE
q
c
1
= E
8.7.2 Drift TransistorBuilt-in Base Field

-
E B C
E
c

E
v

E
f

-
E
B
C
E
c

E
v

E
f

Slide 8-26
8.7.3 Emitter-to-Collector Transit Time and Kirk Effect

Top to bottom :
V
CE
= 0.5V, 0.8V,
1.5V, 3V.
To reduce the total transit time, emitter and depletion layers must be thin, too.
Kirk effect or base widening: At high I
C
the base widens into the collector. Wider
base means larger t
F
.
Slide 8-27

Base Widening at Large I
c
sat E C
qnv A I =
sat E
C
C
C
v A
I
qN
qn qN
=
=
s
dx
dE
c
/
=

x

E
base
N
collector
N
+
collector

base
width
depletion
layer
x

E
base
N
N
+
collector
base
width
depletion
layer
collector
Slide 8-28
8.8 Small-Signal Model

kT qV
S C
BE
e I I
/
=
Transconductance:
) / /(
) (
/
/
q kT I e I
kT
q
e I
dV
d
dV
dI
g
C
kT qV
S
kT qV
S
BE BE
C
m
BE
BE
= =
=
At 300 K, for example, g
m
=I
C
/26mV.
) / /( q kT I g
C m
=
v
be
r
t
g
m
v
be
C
E
B
E
C
t
+

Slide 8-29
F
m
BE
C
F BE
B
g
dV
dI
dV
dI
r | |
t
= = =
1 1
m F C F
BE BE
F
g I
dV
d
dV
dQ
C t t
t
= = =
This is the charge-storage capacitance, better known as the
diffusion capacitance.
Add the depletion-layer capacitance, C
dBE
:

dBE m F
C g C + =t
t
8.8 Small-Signal Model

m F
g r / |
t
=
v
be
r
t
g
m
v
be
C
E
B
E
C
t
+

Slide 8-30
EXAMPLE: Small-Signal Model Parameters

A BJT is biased at I
C
= 1 mA and V
CE
= 3 V. |
F
=90, t
F
=5 ps,
and T = 300 K. Find (a) g
m
, (b) r
t
, (c) C
t
.

Solution:

(a)

(b)

(c)

siemens) (milli q kT I g
C m
mS 39
V
mA
39
mV 26
mA 1
) / /( = = = =
k 3 . 2
mS 39
90
/ = = =
m F
g r |
t
ad) (femto far g C
m F
fF 19 F 10 9 . 1 039 . 0 10 5
14 12
= ~ = =

t
t
Slide 8-31
Once the model parameters are determined, one can analyze
circuits with arbitrary source and load impedances.
The parameters are routinely
determined through comprehensive
measurement of the BJT AC
and DC characteristics.
Slide 8-32
8.9 Cutoff Frequency

The load is a short circuit. The signal source is a current source,
i
b
, at frequency, f. At what frequency does the current gain
fall to unity? ) / (
b c
i i |
C dBE F F
m
b
c
be m c
b b
be
qI kT C j j C j r
g
i
i
v g i
C j r
i i
v
/ / 1
1
/ 1
) (
,
/ 1 admittance input
e et | e
e |
e
t t
t t
+ +
=
+
= =
=
+
= =
) / ( 2
1
at 1
C dBE F
T
qI kT C
f
+
= =
t t
|
v
be
r
t g
m
v
be
C
E
B
E
C
t
+
-
Signal
source
Load
dBE m F
C g C + =t
t
Slide 8-33
f
T
is commonly used to compare the speed of transistors.
Why does f
T
increase with increasing I
C
?
Why does f
T
fall at high I
C
?
f
T
= 1/2t(t
F
+ C
dBE
kT/qI
C
)
8.9 Cutoff Frequency

Slide 8-34
Poly-Si emitter
Thin base
Self-aligned poly-Si base contact
Narrow emitter opening
Lightly-doped collector
Heavily-doped epitaxial subcollector
Shallow trench and deep trench for electrical isolation
BJ T Structure for Minimum Parasitics and High Speed
Slide 8-35
In order to sustain an excess hole charge in the transistor,
holes must be supplied through I
B
to susbtain recombination at
the above rate.
What if I
B
is larger than ?
F F F
Q | t /
F F
F
B
F
Q
t I
dt
dQ
| t
= ) (
Step 1: Solve it for any given I
B
(t) to find Q
F
(t).
8.10 Charge Control Model

For the DC condition,
F F
F
F C B
Q
I I
| t
| = = /
Step 2: Can then find I
C
(t) through I
C
(t) = Q
F
(t)/t
F
.
I
C
(t) = Q
F
(t)/t
F
Slide 8-36
Visualization of Q
F
(t)
F F
F
B
F
Q
t I
dt
dQ
| t
= ) (
Q
F
( t )
Q
F
/ t
F
|
F
I
B
( t ) ) (t I
B
F F
F
Q
| t
Slide 8-37
EXAMPLE : Find I
C
(t) for a Step I
B
(t)
The solution of is
F F
F
B
F
Q
t I
dt
dQ
| t
= ) (
) 1 ( / ) ( ) (
) 1 (
/
0
/
0
F F
F F
t
B F F F C
t
B F F F
e I t Q t I
e I Q
| t
| t
| t
| t
= =
=
What is ? ) ( )? 0 ( ? ) (
F F B
Q Q I
I
B
(t)
I
C
(t)
I
C
(t)
t
t
I
B
I
B0
E B C
n
t
Q
F

Slide 8-38
8.11 Model for Large-Signal Circuit Simulation
Compact (SPICE) model contains dozens of parameters,
mostly determined from measured BJT data.
Circuits containing tens of thousands of transistors can
be simulated.
Compact model is a contract between
device/manufacturing engineers and
circuit designers.
) 1 ( 1 ) (
/ / /

|
|
.
|
\
|
+
'
=
kT qV
F
S
A
CB
kT qV kT qV
S C
BC BC BE
e
I
V
V
e e I I
|
C
B
E
Q
F
C
CS
r
B
r
C
r
E
C
BE
Q
R
C
BC
I
C
Slide 8-39
A commonly used BJT compact model is the Gummel-Poon
model, consisting of
Ebers-Moll model
Current-dependent beta
Early effect
Transit times
Kirk effect
Voltage-dependent capacitances
Parasitic resistances
Other effects

8.11 Model for Large-Signal Circuit Simulation
Slide 8-40
8.12 Chapter Summary
The base-emitter junction is usually forward-biased while
the base-collector is reverse-biased. V
BE
determines the
collector current, I
C
.

}
=
B
BE
W
B iB
i
B
kT qV
B
i
E C
dx
D
p
n
n
G
e
G
qn
A I
0
2
2
/
2
) 1 (
G
B
is the base Gummel number, which represents all the
subtleties of BJT design that affect I
C
.

Slide 8-41
The base (input) current, I
B
, is related to I
C
by the
common-emitter current gain, |
F
. This can be related to
the common-base current gain, o
F
.

B
E
B
C
F
G
G
I
I
~ = |
The Gummel plot shows that |
F
falls off in the high I
C

region due to high-level injection in the base. It also falls
off in the low I
C
region due to excess base current.

F
F
E
C
F
I
I
|
|
o
+
= =
1

Base-width modulation by V
CB
results in a significant slope
of the I
C
vs. V
CE
curve in the active region (known as the
Early effect).

Slide 8-42
Due to the forward bias V
BE
, a BJT stores a certain amount
of excess carrier charge Q
F
which is proportional to I
C
.

F C F
I Q t
t
F
is the forward transit time. If no excess carriers are stored
outside the base, then

The charge-control model first calculates Q
F
(t) from I
B
(t)
and then calculates I
C
(t).

B
B
FB F
D
W
2
2
= =t t
F F
F
B
F
Q
t I
dt
dQ
| t
= ) (
F F C
t Q t I t / ) ( ) ( =
, the base transit time.
Slide 8-43
The small-signal models employ parameters such as
transconductance,

q
kT
I
dV
dI
g
C
BE
C
m
/ =
input capacitance,

and input resistance.

m F
BE
F
g
dV
dQ
C t
t
= =
m F
B
BE
g
dI
dV
r / |
t
= =

Bipolar Junction Transistors Explained

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Slide 8-1

Chapter 8 Bipolar J unction Transistors

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

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