July28th2008 Notes

Slide 1 EE100 Summer 2008 Bharathwaj Muthuswamy
EE100Su08 Lecture #14 (July 28

th
2008)
Outline
MultiSim licenses: trying to get new licenses
HW #2: regrade deadline: Monday, 07/28, 5:00 pm
PST.
Midterm #1 regrades: DONE!
QUESTIONS?
Bode plots
Diodes: Introduction
Reading
Appendix E* (skip second-order resonance bode
plots), Chapter 1 from your reader (skip second-order
resonance bode plots)
Chapter 2 from your reader (Diode Circuits)
Example Circuit
) 1 ( ) / 1
) / 1 (
2 2
C R j
A
C j R
jwC A
IN
OUT
e e +
=
+
=
V
V
IN
OUT
nction TransferFu
V
V
=

+
AV
T
R
2
R
1
+

V
T
+

V
OUT
C
V
IN
+

c R
c
IN
OUT
Z Z
AZ
+
=
V
V
A = 100
R
1
= 100,000 Ohms
R
2
= 1000 Ohms
C = 10 uF
Example Circuit

+
AV
T
R
2
R
1
+

V
T
+

V
OUT
C
V
IN
+

A = 100
R
1
= 100,000 Ohms
R
2
= 1000 Ohms
C = 10 uF
Example Circuit

+
AV
T
R
2
R
1
+

V
T
+

V
OUT
C
V
IN
+

A = 100
R
1
= 100,000 Ohms
R
2
= 1000 Ohms
C = 10 uF
Bode Plot: Label as dB
0
20
40
60
-20
10 100 1000
1
Radian
Frequency
) 1 (
2
C R j
A
IN
OUT
e +
=
V
V
A = 100
R
2
= 1000 Ohms
C = 10 uF
w
p
= 1/(R
2
C) = 100
A
M
a
g
n
i
t
u
d
e

i
n

d
B

Note: Magnitude in dB = 20 log
10
(V
OUT
/V
IN
)
Example: Phase plot
) 1 (
2
C R j
A
IN
OUT
e +
=
V
V
-90
0
90
180
-180
10 100 1000
1
Radian
Frequency
-45
o
A = 100
R
2
= 1000 Ohms
C = 10 uF
P
h
a
s
e

Actual value is
45 45 0 }
45 2
0 100
{ }
| 1 |
0 100
{ = =
Z
Z
=
+
Z
Phase
j
Phase
Transfer Function
Transfer function is a function of frequency
Complex quantity
Both magnitude and phase are function of
frequency
Two Port
filter network
V
in
V
out
( )
( )
( )
out
out in
in
V
f
V
H f
u u
u
= = Z
= Z
out
in
V
H
V
H(f)
Filters
Circuit designed to retain a certain
frequency range and discard others
Low-pass: pass low frequencies and reject high
frequencies
High-pass: pass high frequencies and reject low
frequencies
Band-pass: pass some particular range of
frequencies, reject other frequencies outside
that band
Notch: reject a range of frequencies and pass
all other frequencies
Common Filter Transfer Function vs. Freq
(Magnitude Plots shown)
( ) H f
Frequency
High Pass
( ) H f
Frequency
Low Pass
( ) H f
Frequency
Band Pass
Frequency
Band Reject
( ) H f
First-Order Lowpass Filter
( )
( )
1
2
1
2
1 ( ) 1 1
tan
1 ( ) 1
1
1 1
2
( )
1
( ) , tan
1
B B
B
B
j C
RC
j C R j RC
RC
Let and f
RC RC
H f
f
H f
f
f
f
e
e
e e
e
e
t
u
u
= = = Z
+ +
+
= =
= Z
| |
= =
|
\ .
| |
+
|
\ .
C
V
H(f) =
V
H(f)
R
+
-
C
V
V
C

+
-
1/ 2
10 10
1
( ) 2
2
( ) 1
20log 20( ) log 2 3
(0) 2
B
B
H f
H f
dB
H
= =
= =
First-Order Highpass Filter
( )
( )
( )
1
2
1
2
tan
1 ( ) 1 2
1
( ) , tan
2
1
R
B
B
B
RC
R j RC
RC
j C R j RC
RC
f
f
f
H f
f
f
f
e
e t
e
e e
e
t
u
(
= = = Z
(
+ +

+
| |
|
| |
\ .
= =
|
\ .
| |
+
|
\ .
V
H(f) =
V
R
+
-
C
V
V
C

+
-
1/ 2
10 10
1
( ) 2
2
( ) 1
20log 20( ) log 2 3
(0) 2
B
B
H f
H f
dB
H
= =
= =
V
R

First-Order Lowpass Filter
1
2
1
2
1 1
tan
1
1
2
( )
1
( ) , tan
1
R
B B
B
B
L
j L
R
L
R
R
R R
Let and f
L L
H f
f
H f
f
f
f
e
e
e
e
t
u
u
| |
= = Z
|
\ .
| | +
+
|
\ .
= =
= Z
| |
= =
|
\ .
| |
+
|
\ .
V
H(f) =
V
H(f)
R
+
-
L
V
V
L

+
-
V
R

First-Order Highpass Filter
1
2
1
2
tan
2
1
1
2
( )
( ) , tan
2
1
L
B B
B
B
B
j L L
L
R R
j L
R
L
R
R
R R
Let and f
L L
H f
f
f
f
H f
f
f
f
e e
t e
e
e
e
t
u
t
u
(
| |
= = Z
|
(
\ .

| | +
+
|
\ .
= =
= Z
| |
|
| |
\ .
= =
|
\ .
| |
+
|
\ .
V
H(f) =
V
H(f)
R
+
-
L
V
V
L

+
-
V
R

First-Order Filter Circuits
L
+

V
S
C
R
Low Pass
High
Pass
H
R
= R / (R + jeL)
H
L
= jeL / (R + jeL)
+

V
S
R
High Pass
Low
Pass
H
R
= R / (R + 1/jeC)
H
C
= (1/jeC) / (R + 1/jeC)
Diodes
OUTLINE
Diode Model(s)
Circuit Analysis with Diodes
Diode Logic Gates
Load Line Analysis
Zener Diodes
Diode Peak Detector
Reading
Reader: Chapter 2
Diode Physical Behavior and Equation
N
type
P
type
Schematic Device
+

V
I
I
Symbol
+

V
Qualitative I-V characteristics:
I
V
V positive,
easy
conduction
V negative,
no
conduction
Quantitative I-V characteristics:
) 1 e ( I I
kT qV
0
=
In which kT/q is 0.026V and I
O
is a
constant depending on diode area.
Typical values: 10
-12
to 10
-16
A.
Interestingly, the graph of this
equation looks just like the figure to
the left.
A non-ideality factor n times kT/q is often included.
Diode Ideal (Perfect Rectifier) Model
The equation
is graphed below for
1)
kT
qV
exp( I I
0
=
A 10 I
15
0

=
The characteristic is described as
a rectifier that is, a device that
permits current to pass in only one
direction. (The hydraulic analog is
a check value.) Hence the
symbol:
+
V
I
Simple Perfect Rectifier Model
If we can ignore the small forward-
bias voltage drop of a diode, a
simple effective model is the
perfect rectifier, whose I-V
characteristic is given below:
V
I
Reverse bias
0 V any , 0 I < ~
Forward bias
0 I any , 0 V > ~
A perfect rectifier
0
2
4
6
8
10
-5 0 5 10
Current
in mA
Forward
Voltage in V
I-V Characteristics
In forward bias (+ on p-side) we
have almost unlimited flow
(very low resistance).
Qualitatively, the I-V
characteristics must look like:
V
F

I
current increases
rapidly with V
V
F

I
The current is close
to zero for any
negative bias
In reverse bias (+ on n-side)
almost no current can flow.
Qualitatively, the I-V
characteristics must look like:

pn-Junction Reverse Breakdown
As the reverse bias voltage increases, the peak electric
field in the depletion region increases. When the electric
field exceeds a critical value (E
crit
~ 2x10
5
V/cm), the
reverse current shows a dramatic increase:
I
D
(A)
V
D
(V)
reverse (leakage) current
forward current
breakdown voltage V
BD

The pn Junction I vs. V Equation
In EECS 105, 130, and other courses you will learn why the I vs. V
relationship for PN junctions is of the form
) 1 e ( I I
kT qV
0
=
where I
0
is a constant proportional to junction area and depending
on doping in P and N regions,
k is Boltzman constant, and T is absolute temperature.
a typical value for I
0
is
, 10 6 . 1 harge c electronic q
19
= =
, K at300 0.026V q KT = A 10 10
15 12

We note that in forward bias, I increases exponentially and is in
the A-mA range for voltages typically in the range of 0.6-0.8V.
In reverse bias, the current is essentially zero.
I-V characteristic of PN junctions
reverse bias
forward bias
An ideal diode passes current only in one direction.
An ideal diode has the following properties:
when I
D
> 0, V
D
= 0
when V
D
< 0, I
D
= 0
Ideal Diode Model of PN Diode
I
D
(A)
V
D
(V)
I
D
+

V
D

+
V
D

I
D
Circuit symbol I-V characteristic
Diode behaves like a switch:
closed in forward bias mode
open in reverse bias mode
Switch model
Diode Large-Signal Model (0.7 V Drop)
Improved Large-Signal Diode Model:
If we choose not to ignore the small
forward-bias voltage drop of a
diode, it is a very good
approximation to regard the voltage
drop in forward bias as a constant,
about 0.7V. the Large signal
model results.
Reverse bias
0 V any , 0 I < ~
Forward bias
0 I any , 0.7 V
> ~
0
100
200
300
400
-5 -3 -1 1
forward bias (V)
C
u
r
r
e
n
t

(
m
i
c
r
o
a
m
p
)
+

V
I
The Large-Signal
Diode Model
- 0.7+
V
I
0.7
Large-Signal Diode Model
reverse bias
forward bias
I
D
(A)
V
D
(V)
I
D
+

V
D

+

V
D

I
D
Circuit symbol I-V characteristic Switch model
V
Don

+

V
Don

RULE 1: When I
D
> 0, V
D
= V
Don

RULE 2: When V
D
< V
Don
, I
D
= 0
Diode behaves like a voltage
source in series with a switch:
closed in forward bias mode
open in reverse bias mode
For a Si pn diode, V
Don
~ 0.7 V

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Slide 1 EE100 Summer 2008 Bharathwaj Muthuswamy

EE100Su08 Lecture #14 (July 28

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