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General aspects
Optical absorption and luminescence occur by transition of electrons and holes between electronic states (bands, tail states, gap states). If electron-phonon coupling is strong enough self-trapping occurs.
where I(z) is the flux density if incident light is Io, z is the distance measured from the incident surface. Hence = - (1/I(z)) dI(z)/dz
I(z) = Io exp {- z}
Absorption
C region
In addition, optical absorption by defects also appears at energy lower than optical gap. Likewise is written as another exponential function of photon energy: () ~ exp (/Ed), Ed belongs to the width of the defect states. C region is rather sensitive to the structural properties of materials.
S. Kugler: Lectures on Amorphous Semiconductorsa 9
Direct/indirect transition
In the case of crystalline semiconductors (without defects, there is no localized state) photoluminescence occurs by transition between the bottom of the conduction band and the top of the valence band. k selection rule must be satisfied: kphoton = ki kf . (kphoton, ki and, kf are the wave numbers of photons, electron of initial and final states.
S. Kugler: Lectures on Amorphous Semiconductorsa 10
Since kphoton is much smaller than ki and kf, we can rewrite the selection rule:
ki = kf.
The semiconductors satisfying this condition is called direct-gap semiconductors. c-Si is not satisfying k-selection rule (indirect-gap semiconductor). Transition is allowed by either absorption of phonons or their emission.