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electrons
+
holes
E
I
C
I
B
I
5
4
1
2
3
+
I
EP
I
EN
I
BR
Electron
flux
Hole
flux
and current
I
BR
I
BE
+
12
Current components
1 = hole current lost due to recombination in base, I
BR
2 = hole current collected by collector, ~ I
C
1 + 2 = hole part of emitter current, I
EP
5 = electrons injected across forward biased E-B junction, ( I
BE
);
same as electron part of emitter current, I
EN
4 = electron supplied by base contact for recombination with
holes lost, I
BR
(= 1)
3 = thermally generated e & h making up reverse saturation
current of reverse biased C-B junction. (generally neglected)
13
Performance parameters (Consider pnp)
Emitter efficiency:
E
EP
EN EP
EP
I
I
I I
I
=
+
= Fraction of emitter current carried by holes.
We want close to 1.
Base transport factor:
Ep
C
T
I
I
=
Fraction of holes collected by the collector.
We want o
T
close to 1.
Common base dc current gain:
E dc E T EP T C
I I I I o = o = o =
o o
T dc
=
Neglect the reverse leakage (electron) current of C-B junction
Note that o is less than 1.0 but close to 1.0 (e.g. o = 0.99)
14
Performance parameters (Consider pnp)
Common emitter dc current gain, |
dc
:
B dc C
I I | =
B
dc
dc
C
B C dc E dc C
1
) (
I I
I I I I
|
|
.
|
\
|
=
+ = =
o
o
o o
But,
o
o
o
o
|
T
T
dc
dc
dc
1 1
=
=
Note that | is large (e.g. | = 100)
For npn transistor, similar analysis can be carried out. However,
the emitter current is mainly carried by electrons.
Example:
. etc
EN EP
EP
I I
I
+
=