Chapter 7:

BJT Transistor Modeling

2
Topic objectives
At the end of the course you will be able to
Understand about the small signal analysis of circuit
network using r
e
model and hybrid equivalent model
Understand the relationship between those two
available model for small signal analysis

3
INTRODUCTION:TRANSISTOR MODELING

To begin analyze of small-signal AC response of BJT
amplifier the knowledge of modeling the transistor is
important.
The input signal will determine whether its a small
signal (AC) or large signal (DC) analysis.
The goal when modeling small-signal behavior is to
make of a transistor that work for small-signal enough to
keep things linear (i.e.: not distort too much) [3]
There are two models commonly used in the small signal
analysis:
a) r
e
model
b) hybrid equivalent model
4
How does the amplification be
done?
Conservation; output power
of a system cannot be large
than its input and the
efficiency cannot be greater
than 1
The input dc plays the
important role for the
amplification to contribute its
level to the ac domain where
the conversion will become
as =P
o(ac)
/P
i(dc)

Simply speaking
5
Disadvantages
R
e
model
Fails to account the output impedance level of device
and feedback effect from output to input
Hybrid equivalent model
Limited to specified operating condition in order to
obtain accurate result
6
V
S
V
CC
C
1
C
2
C
3
+
-
V
o
R
S
V
i
+
-
R
E
R
C
R
1
R
2
V
S
+
-
V
o
R
S
V
i
+
-
R
C
R
1
R
2
I/p coupling
capacitor s/c
Large values
Block DC and
pass AC signal
Bypass
capacitor s/c
Large values
DC supply
0 potential
Voltage-divider configuration
under AC analysis
Redraw the voltage-divider
configuration after removing dc
supply and insert s/c for the
capacitors
O/p coupling
capacitor s/c
Large values
Block DC and
pass AC signal
7
V
S
R
S
R2 R1
R
c
Transistor small-
signal ac
equivalent cct
V
o
Z
i
I
i
Z
o
I
o
V
i
+
+
- -
B
E
C
Redrawn for small-signal AC analysis
Modeling of
BJT begin
HERE!
V
S
+
-
V
o
R
S
V
i
+
-
R
C
R
1
R
2
8
AC bias analysis :

1) Kill all DC sources

2) Coupling and Bypass capacitors are short cct.
The effect of there capacitors is to set a lower cut-off
frequency for the cct.

3) Inspect the cct (replace BJTs with its small signal
model:r
e
or hybrid).

4) Solve for voltage and current transfer function,
i/o and o/p impedances.
9
IMPORTANT PARAMETERS

Input impedance, Z
i
Output impedance, Z
o
Voltage gain, A
v
Current gain, A
i

Input Impedance, Z
i
(few ohms MO)

The input impedance of an amplifier is the value as a
load when connecting a single source to the I/p of
terminal of the amplifier.
10
V
S Two-port
system
V
i
R
sense
I
i
Z
i
+
-
Determining Z
i
+
-
sense
i s
i
R
V V
I

=
i
i
i
I
V
Z =
Two port system
-determining input impedance Z
i

The input impedance of transistor can be
approximately determined using dc biasing because it
doesnt simply change when the magnitude of applied
ac signal is change.
11
Demonstrating the impact of Z
i

V
S
=10mV
Two-port
system
V
i
R
source
Z
i
+
-
+
-
1.2 k
600
mV 6 . 6
600 k 2 . 1
) m 10 ( k 2 . 1
R Z
V Z
V
600 R impedance, source With
system the to applied 10mV Full
0 R source, Ideal
source i
s i
i
source
source
=
+
=
+
=
=
=
12
Example 6.1: For the system of Fig. Below, determine
the level of input impedance
V
S
=2mV
Two-port
system
V
i
=1.2mV
R
sense
Z
i
+
-
+
-
1 k
A 8 . 0
k 1
m 8 . 0
k 1
m 2 . 1 m 2
R
V V
I
sense
i s
i = =

=
: Solution
O =

= = k 5 . 1
8 . 0
m 2 . 1
I
V
Z
i
i
i
13
Output Impedance, Z
o
(few ohms 2MO)


The output impedance of an amplifier is determined at
the output terminals looking back into the system with
the applied signal set to zero.
Two-port
system
R
source
V
s
=0V
R
sense
V
+
-
+
-
I
o
Z
o
V
o
Determining Z
o
sense
o
o
R
V V
I

=
o
o
o
I
V
Z =
cct open become Z R Z o L o >
R
L
Z
o
=R
o
I
amplifier
I
Ro
I
L
Ro L
L o
I I
R R For
>
>
14
Example 6.2: For the system of Fig. below, determine the
level of output impedance
Two-port
system
V
s
=0V
R
sense
V=1 V
+
-
+
-
Z
o
V
o
=680mV
20 k
A 16
k 20
m 320
k 20
m 680 1
R
V V
I
sense
o
o = =

=
: Solution
O =

= = k 5 . 42
16
m 680
I
V
Z
o
o
o
15
Example 6.3: For the system of Fig. below, determine Z
o

if V=600mV, R
sense
=10kO and I
o
=10A
Two-port
system
R
source
V
s
=0V
R
sense
V
+
-
+
-
I
o
Z
o
V
o
( )
( )
mV 500
k 10 10 m 600
R I V V
R
V V
I
sense o o
sense
o
o
=
=
=

=
: Solution
O =

= = k 50
10
m 500
I
V
Z
o
o
o
16
Example 6.4: Using the Z
o
obtained in example 6.3,
determine I
L
for the configuration of Fig below if
R
L
=2.2 kO and I
amplifier
=6 mA.
R
L
Z
o
=R
o
I
amplifier
I
Ro
I
L
mA 747 . 5
k 2 . 2 k 50
) m 6 ( k 50
R Z
) (I Z
I
: rule divider Current
L o
amplifier o
L
=
+
=
+
=
: Solution
17
Voltage Gain, A
V


DC biasing operate the transistor as an amplifier.
Amplifier is a system that having the gain behavior.
The amplifier can amplify current, voltage and power.
Its the ratio of circuits output to circuits input.
The small-signal AC voltage gain can be determined
by:
i
o
v
V
V
A =
18
V
S A
vNL
V
i
R
source
Z
i
+
-
+
-
V
o
+
-
Determining the no load voltage gain
By referring the network below the analysis are:
cct) (open R
i
o
L vNL
V
V
A
load no
= =
vNL A
R Z
Z
V
V
A
: resistance source with
s i
i
s
o
vs
+
= =
19
Example 6.5: For the BJT amplifier of fig. below,
determine: a)V
i
b) I
i
c) Z
i
d) A
vs
V
S
=40mV
BJT amplifier
A
vNL
=320
V
i
R
s
Z
i
+
-
+
-
V
o
=7.68V
+
-
1.2 k
mV 24
320
7.68

A
V
V

V
V
A a)
vNL
o
i
i
o
vNL
= = =
=
: Solution
source s
s
i s
i
R R
A 33 . 13
k 2 . 1
m 24 m 40
R
V - V
I b)
=
=

= =
O =

= = k 8 . 1
33 . 13
m 24
I
V
Z c)
i
i
i
192 ) 320 (
k 2 . 1 k 8 . 1
k 8 . 1
A
R Z
Z
A d) vNL
s i
i
vs =
+
=
+
=
20
Current Gain, A
i


This characteristic can be determined by:
i
o
i
I
I
A =
BJT
amplifier
V
i
Z
i
+
-
V
o
+
-
I
i
R
L
Determining the loaded current gain
I
o
L
i
v i
R
Z
A A =
L i
i o
i i
L o
R V
Z V
Z / V
R / V
= =
L
o
o
R
V
I =
21
r
e
TRANSISTOR MODEL

employs a diode and controlled current source to
duplicate the behavior of a transistor.
BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

Common-base BJT transistor
r
e
model
r
e
equivalent cct.
22
E
B B
C
Common-base BJT transistor - pnp
I
c
I
e
e
b b
c
e c I I =
I
c I
e
r
e
model for the pnp common-base
configuration
e
b b
c
e c I I =
I
c I
e
common-base r
e
equivalent cct
r
e
current emitter
of level DC the is I
I
26mV
r
E
E( dc)
e =
isolation
part,
Z
i
=r
e
e
b b
c
A 0 Ic =
I
c
I
e=
0A
Determining Z
o
for common-base
r
e
V
s
=0V
Z
o
~ O
Therefore, the input impedance, Z
i
= r
e
that less than 50.
For the output impedance, it will be as
follows;
23
The common-base
characteristics
24
e
b b
c
e c I I =
I
e
r
e
Defining A
v
=V
o
/V
i
for the common-base configuration
BJT common-base
transistor amplifier
V
i V
o
+
-
+
-
Z
i
O = o Z
R
L
I
o
( ) L e L c L o o R I R I R I V o = = =
e
L
e
L
v
r
R
r
R
A
gain, Voltage
~
o
=
e e i e i r I Z I V = =
e e
L e
v
r I
R I
Vi
Vo
A
o
= =
25
1 A
gain, Current
i ~ o =
e
e
e
c
i
o
i
I
I
I
I
I
I
A
o
=

= =
e
b b
c
e c I I =
I
e
r
e
Defining A
i
=I
o
/I
i
for the common-base configuration
BJT common-base
transistor amplifier
V
i
V
o
+
-
+
-
Z
i
O = o Z
R
L
I
o
26
Example 6.6: For a common-base configuration in figure
below with I
E
=4mA, o=0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Z
i
b) Calculate A
v
if R
L
=0.56kO
c) Find Z
o
and A
i
e
b b
c
e c I I =
I
c I
e
common-base r
e
equivalent cct
r
e
27
Solution:

O = = = = 5 . 6
m 4
m 26
I
26m
r Z a)
E
e i
43 . 84
5 . 6
) k 56 . 0 ( 98 . 0
r
R
A b)
e
L
v = =
o
=
98 . 0
I
I
A
Z c)
i
o
i
o
= o = =
~
28
e
b b
c
e c I I =
I
c I
e
common-base r
e
equivalent cct
r
e
=
i
I
29
Example 6.7: For a common-base configuration in previous
example with I
e
=0.5mA, o=0.98 and AC signal of 10mV is
applied, determine:
a) Z
i
b) V
o
if R
L
=1.2kO c) A
v
d)A
i
e) I
b
O = = = 20
m 5 . 0
m 10
I
V
Z a)
: Solution
e
i
i
88mV 5
(1.2k) 0.98(0.5m)
R I R I V b) L e L c o
=
=
o = =
8 . 58
m 10
m 588
V
V
A c)
i
o
v = = =
98 . 0 A d) i = o =
A 10
) 98 . 0 1 ( m 5 . 0
) 1 ( m 5 . 0
I - I
I - I I e)
e e
c e b
=
=
o =
o =
=
30
Common-Emitter Configuration

Common-emitter BJT transistor
r
e
model
r
e
equivalent cct.
Still remain controlled-current source (conducted
between collector and base terminal)
Diode conducted between base and emitter terminal
Input Output
Base & Emitter terminal Collector & Emitter terminal
31
common-emitter BJT transistor
E E
B
C
I
b
I
c
b c I I | =
c
e e
b
I
c
I
b
r
e
model npn common-emitter configuration
b c I I | =
c
e e
b
I
c
I
i
=I
b
Determining Z
i
using r
e
equivalent model
r
e
I
e
+
-
V
be
+
-
V
i
(1)
Ii
Vi
Zi =
gives (1) into subtitute
and Ibre Iere Vbe Vi | ~ = =
b
e b
b
be
I
r I
I
V
Zi
|
~ =
e r Zi | =
O 7k ~ 6 to hundred between ranges
i
Z
32
The output graph
33
b I |
c
e
b
I
i
=I
b
r
e
model for the C-E transistor configuration
r
e
r
o
e
0A b I =
c
e
b
I
i
=I
b
r
e
r
o
e
V
s
=0V
= 0A
o Z
impedance) high cct, (open Z
the thus ignored is r if
r Z
o
o
o o
=
=
Output impedance Z
o

34
e
b b
c
b c o I I I | = = I
i
=I
b
r
e
Determining voltage and current gain for the
common-emitter amplifier
BJT common-emitter
transistor amplifier
V
i
V
o
+
-
+
-
O = o Z R
L
I
o
e i r Z | =
e
L
v
r
R
A =
Ib
Ib
Ib
Ic
Ii
Io
A
gain, Current
i
|
= = =
( ) L b L c L o o R I R I R I V | = = =
e b i i i r I Z I V | = =
e b
L b
i
o
v
r I
R I
V
V
A
gain, Voltage
|
|
= =
| = i A
35
Example 6.8: Given |=120 and I
E(dc)
=3.2mA for a common-
emitter configuration with ro= O, determine:

a) Z
i
b)A
v
if a load of 2 kO is applied c) A
i
with the 2 kO load
O = = | =
O = = =
975 ) 125 . 8 ( 120 r Z
125 . 8
m 2 . 3
m 26
I
26m
r a)
e i
E
e
: Solution
15 . 246
125 . 8
k 2
r
R
b)A
e
L
v = = =
120
I
I
A c)
i
o
i = | = =
36
Example 6.9: Using the npn common-emitter configuration,
determine the following if |=80, I
E(dc)
=2 mA and r
o
=40 kO

a) Z
i
b) A
i
if R
L
=1.2k O c) Av if R
L
=1.2k O
O = = | =
O = = =
k 04 . 1 ) 13 ( 80 r Z
13
m 2
m 26
I
26m
r a)
e i
E
e
: Solution
b I |
c
b
I
i
=I
b
r
e
model for the C-E transistor configuration
r
e
r
o
e
R
L
I
o
37
67 . 77
) 80 (
k 2 . 1 k 40
k 40
R r
r
I
R r
) I ( r
A
R r
) I ( r
I
I
I
I
I
i A b)
(cont) Solution
L o
o
b
L o
b o
i
L o
b o
L
b
L
i
o
=
+
= |
+
=
+
|
=
+
|
=
= =
6 . 89
13
k 40 k 2 . 1
r
r R
v A c)
e
o L
= = =
38
Hybrid Equivalent Model
r
e
model is sensitive to the dc level of operation
that result input resistance vary with the dc
operating point
Hybrid model parameter are defined at an
operating point that may or may not reflect the
actual operating point of the amplifier
39
Hybrid Equivalent Model
The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.
40
Determination of parameter
0V V
o
i
12
0V V
i
i
11
o 12 i 11 i
o
o
V
V
h
I
V
h
V h I h V
=
=
=
=
+ =
0A I
o
o
22
0V V
o
i
21
o
o 22 i 21 O
o
o
V
I
h
I
I
h
, 0V V Solving
V h I h I
=
=
=
=
=
+ =
H
22
is a conductance!
41
General h-Parameters for any
Transistor Configuration
hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
42
Common emitter hybrid
equivalent circuit
43
Common base hybrid equivalent
circuit
44
Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr ~ 0 therefore hrVo = 0 and ho ~ (high resistance on the output)


Simplified
45
Common-Emitter re vs. h-Parameter Model
hie = |re
hfe = |
hoe = 1/ro
46
Common-Emitter h-Parameters
[Formula 7.28]




[Formula 7.29]
ac fe
e ie
h
r h
B =
B =
47
Common-Base re vs. h-Parameter Model
hib = re
hfb = -o
48
Common-Base h-Parameters
[Formula 7.30]



[Formula 7.31]
1 ~ =
=
o
fb
e ib
h
r h