ECE 662

Microwave Devices
Transit-Time Diodes
February 17, 2005
Two-Terminal Negative
Resistance Devices
Avalanche Transit-Time Devices
Avalanche Transit-Time Devices
Avalanche Transit-Time Devices
Measured Ionization
rates for electrons and
holes vs reciprocal field
for Si and GaAs
Ref: Sze
Diode Configurations
B
m
m
m
qN
E
W E
W
x
E x W
n p
n i p
2 2
1
V
ion concentrat bulk doped lightly the is N where
) 1 ( ) (
qN
E(x)
diode, junction Abrupt
width) (depletion W E V is voltage breakdown
and constant is E field, Diode,
2
s
B
B
s
B
m B
m
c
c
= =
= + =

=

+
IMPATT Mode Diodes
IMPATT Mode Diodes
Injected carriers therefore traverse the length w
D
of the drift region
During the negative half-cycle if we choose the transit time to be
oscillation period.
) ( ) sin( ) (
2
1
P and
2
I
2
I I I I
conserved is Charge . v circuit external in Current
) 2 /( f or ) / 1 ( 5 . 0 /
2
0
rf dc
max inj dc inj max
s
t d t V t I I V P
w v f v w
rf ind B dc
d W
d
W
D s D d
e e e
t
t
u
t
u
u
u
t
t
}
= =
= = =

~ = ~
;
1 cos
2 /
) 2 / sin(


s, IMPATT'
) cos( cos
2 /
) 2 / sin(


;
2 /
) 2 / sin( ) cos( cos

d
m
m
dc
(

=
~
(

+
= =
(

+
=
d W
W
B
rf
m
d
d m
W
W
B
rf
dc
rf
W
W
d
D m
rf rf
V
V
f or
V
V
P
P
V I P
u
u
u
u
q
t u
u
u u u
u
u
q
u
u
u
u u u
W
v
W
v
f
v
W
now
V
V
Max
V
V
s s
s
B
rf
d B
rf
W
W
W
2
74 . 0
2
30% to 20 typically,
,


72 . 0 so 74 . 0 when occurs
1 cos


and , 1
2 /
) 2 / sin(
so
small is , efficiency best for
d
d
d max
d
= ~ =
=
= =
(

= ~
t
u e
u
q
q t u q
u
u
q
u
u
u
IMPATT Mode Diodes
Double-Drift Region IMPATTs
TUNNETT Mode
BARrier Injection Transit Time Devices
(BARITTs)
BARrier Injection Transit Time Devices
(BARITTs)
The injected carrier density increases with the ac voltage.
Then the carriers will traverse the drift region.
The injected hole pulse at 90
o
and the corresponding
induced current which travels 3/4s of a cycle to reach the
negative terminal. Or w/v
s
= (1/f)
Note that for t/2s etst, both the ac voltage and external
current are positive therefore ac power is dissipated in the
device.
Consequently, the BARITT diodes have low power
capabilities and low efficiencies but they also have low
noise (avoiding the avalanche phenomena).
TRApped Plasma Avalanche Triggered
Transit Time Devices (TRAPATTs)
TRApped Plasma Avalanche Triggered
Transit Time Devices (TRAPATTs)
Comparison of Microwave
Devices
An important figure of merit for microwave
devices is power output as a function of oscillation
frequency.
Due to limitations of semiconductor materials, the
maximum power of a single device at a given
frequency is limited.
Two basic limitations:
Critical field, at which avalanche breakdown occurs
Saturation velocity which is the maximum attainable
velocity in semiconductors
Power Output -1
The maximum voltage that can be applied
across a semiconductor sample is limited by
the break down voltage.
For a uniform avalanche this is V
m
= E
c
W
where W is the depletion layer width
The maximum current that can be carried by
the semiconductor is also limited by the
avalanche breakdown process, because the
current in the space charge region causes an
in crease in the electric field.
Power Output -2
W / A E I be to allowed current maximum the find
E E(W) setting ). IW/(A )dx / ( W) E(x
is charge space the to due field
electric in the E(x) e disturbanc The area. the is A
density charge space the is where A, I then
: region depletion the across , velocity, saturation
at their travel electrons that the Assume
s s c m
c s s
W
0
s s
s s spchrg
s
=
= A = = = A
A
=
}
u
Power Output -3
1
s c
c
2
s
2
c
m m
2
m
s
s s
2
c m m m
) / f (2 reactance device the is X
where ,
X 2
E
I V f P
as Rewrite domain. ime transit t under the
operated TED for the 1 and BARITT for 3/4 and
IMPATT for 1/2 is where W, / f frequency,
ime transit t the and A E I V P
: is input power on the limit upper the Therefore

= =
=
= =
W A c t
u
Noise - Microwave Devices
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
B
i
p
o
l
a
r
M
E
S
F
E
T
T
U
N
N
E
L
T
E
D

I
n
P
T
E
D
G
a
A
s
B
A
R
I
T
T
I
M
P
A
T
T
Devices
Noise
Figure
in dB
Solid-State
Device
Power
Output vs
Frequency
ref: Sze
and
modified
by Tian