NOISE IN CIRCUITS

MOHAMMAD A MAKTOOMI
M.TECH (CSD: 2011-2013)
ELED,AMU

Noise: Definition & Classification


EXTERNAL noise: Outside Interference
- Even between different part of circuit
(Electric & Magnetic interaction through
parasitic capacitor/ inductor)
Everything except the desirable ones !
Contd
External noise: periodic, intermittent, or
random


- Present, even if we could manage to remove all
external noise !
- Always random- due to random phenomena like
thermal agitation of electrons in resistors/ random
EHP generation/recombination in semiconductors.

INTERNAL noise: INHERENT NOISE

It limits minimum signal that can be
processed/detected

The noise level of a circuit directly trades
with power dissipation and speed

In most circuits, low noise dictates the use
of large capacitors and/or large g
m
which
means high power dissipation


But, Why do we care???

Contd
The noise has become increasingly
important in modern technologies with
reduced supply voltages

Designing a low power precision circuit
requires good understanding of
electronic noise!

BASIC CONCEPTS

RMS value:

T is some suitable averaging interval.
is mean-square value= average power
dissipated by x
n
(t) in 1 resistor.
NOISE SUMMATION: if the noise are
uncorrelated then superposition holds for
power -

1/ 2
2
0
1
( )
T
n n
X x t dt
T
| |
=
|
\ .

2
n
X
2 2 2 2
1 2 1 2
0
1
[ ( ) ( )]
T
n n n n n
X x t x t dt X X
T
| |
= + = +
|
\ .

SPECTRAL DENSITY

Power spectral density (PSD) shows how
much power signal caries at a particular
frequency.
Expressed as or !
Total (mean) power is, then
2
/ V Hz
/ V Hz
Noise Type: A brief description
THERMAL NOISE
Result of random motion of electrons in
conductor due to thermal effects
White spectral density
Proportional to absolute temperature
Also known as Johnson or Nyquist noise
THERMAL NOISE


r

= NO NOISE (just in model)

r
b
= NOISY (parasitic material resistance)


(Pure) Capacitor, Inductor= No thermal Noise


Purely reactive elements do not generate Noise !

NOT associated with resistor symbol !

SHOT NOISE
Occurs in pn Junction
Result of discrete movement of charge
across the barrier when current flows
through it.
White noise
Thermal noise is independent of bias
current, Shot noise is not !

FLICKER NOISE

Least understood noise!
Found in all active devices (occurs only
when dc current flows)
Due to carrier traps in semiconductor
and released (randomly)
Spectral density proportional to 1/f

,
hence the other name- 1/f noise.

NOISE in Resistor
Thermal noise is major source
PSD: V
2
/Hz
K= Boltzmann Const
T= Temeperature in kelvin
Could be modeled in Norton or Thevenin
form

2
( ) 4
R
V f KTR =
Noise in Resistor
Spectrum is white !
Practically, White only up to 100THz
(then drops)
Input-referred noise
A
1
:noiseless
As A
1
increases, output
Noise will also increase
wrong conclusion, as it
equally amplifies the signal.
Hence the notion
of input-referred
noise.


An Example
Evaluate: output noise and input referred
noise over DC to 1KHz
(1)

(2) V
out
(f)= =
2
2
4 4
( ) 18.26 24
10 1
R
KT KT A
I f E
K K Hz
= + =
1 .10
18.26 24( )
1 10
k k
E
k k

+
3.88 9
V
E
Hz

Mean-power:

RMS output noise = 122.67nV
Input referred noise= 122.67nV/
=1.35uV
1
2 2 2
0
( ) (3.88 9 ) .1
k
out out
V
V V f df E kHz
Hz
= =

1
( )
1 10
k
k k +
SPICE SIMULATION

NOISE in DIODES
SHORT noise is major source
Model: A current source in parallel to
incremental resistance
PSD:
2
( ) 2
d d
I f qI =
d
d
KT
r
qI
=
2
/ A Hz
NOISE IN BJTs
Due to Shot noise of Base and collector
current
Flicker noise of base current
Thermal noise of base resistance
Common practice is to model all noise by
two equivalent sources at the base:
2
1
( ) 4 ( )
2
i b
m
V f KT r
g
= +
2
2
( ) 2 (
( )
C B
i B
I KI
I f q I
f
f |
= + +
NOISE IN MOSFET
Dominant source is Flicker and Shot noise
Flicker Noise Modeled by a voltage source in series
with gate:

K is device dependent parameter (lower for PMOS
than NMOS as their majority carrier is less likely
to be trapped)
Large area device has low flicker noise !
Thermal noise due to resistive channel
In saturation, modeled by a drain to source current
of

2
( )
g
ox
K
V f
WLC f
=
2
2
( ) 4 ( )
3
d m
I f KT g =
Models could be simplified by
Dividing current by in referring
Back to input as voltage source
Or vice versa. [ ]
2
m
g
d m gs
i g v =
Opamp Model
Modeled by three uncorrelated
Noise sources as shown.
In CMOS opamp, Current sources
may be ignored, at low frequencies
SUMMARY of Noise
Models
EXAMPLE-1
An opamp Circuit




Integrate, and add.
EXAMPLE-2
Common-source stage
2 2 2
,
2 4
(4 . )
3
n out m m D
ox D
K KT
V KT g g R
C WLf R
= + +
2
V
Hz
Resistors thermal noise
MOS thermal & flicker noise
EXAMPLE-3
Common-emitter
Evaluate optimum
I
C
, to minimize
Equivalent input
Noise


Assume:

Collector shot noise dominate input noise voltage
Base current shot noise dominates input noise current

Given assumptions mean




Differentiate and equate to zero to obtain,
Conclusion
Discussed various terminology
Discussed Various noise mechanism
Discussed noise models of various
elements
Some examples were discussed
SPICE simulation discussed

References
John and Martin, Analog Integrated Circuit Design
John Wiley & Sons, India, 1997
Baker, R J, CMOS Circuit design, layout and
simulation, John Wiley & sons, India, 2005
Razavi, B, Design of Analog CMOS Integrated
Circuits, TMH, India, 2002
Voss, 1/f(flicker noise): A brief review,
33rd Annual Symposium on Frequency Control.
1979, pn,40-46