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Lithography definitions Resist tone Introduction to the lithography process Surface Preparation Photoresist Application Soft Bake Align & Expose Develop Hard Bake Inspection Etch Layer or Add Layer Resist Strip Final Inspection Clean- Room, Wafer Cleaning
Photolithography -- Definitions
Photolithography is used to produce 2 1/2-D images using light sensitive photoresist and controlled exposure to light. Microlithography is the technique used to print ultra-miniature patterns -- used primarily in the semiconductor industry.
Photolithography -- Definitions
Thin Films
Polish
Patterned wafer
Diffusion
Photo
Etch
Test/Sort
Implant
Resist Tone
Negative: Prints a pattern that is opposite of the pattern that is on the mask. Positive: Prints a pattern that is the same as the pattern on the mask.
Resist Tone
Ultraviolet Light Chrome island on glass mask
Areas exposed to light become polymerized and resist the develop chemical.
Island Exposed area of photoresist
photoresist
Window
Shadow on photoresist
photoresist oxide silicon substrate
oxide
silicon substrate
Negative Lithography
Resist Tone
Ultraviolet Light
Window
photoresist
oxide
silicon substrate
Positive Lithography
Resist Tone
Resist Tone
Resist Tone
bake in enclosed chamber with exhaust Clean and dry wafer surface (hydrophobic) Hexamethyldisilazane (HMDS) Temp ~ 200 - 250C Time ~ 60 sec.
HMDS
2. Photoresist Application
Wafer held onto vacuum chuck Dispense ~5ml of photoresist Slow spin ~ 500 rpm Ramp up to ~ 3000 - 5000 rpm Quality measures:
time speed thickness uniformity particles & defects
to vacuum pump
photoresist dispenser
2. Photoresist Application
Resist spinning thickness T depends on: Spin speed Solution concentration Molecular weight (measured by intrinsic viscosity) In the equation for T, K is a calibration constant, C the polymer concentration in grams per 100 ml solution, h the intrinsic viscosity, and w the number of rotations per minute (rpm) Once the various exponential factors (a,b and g) have been determined the equation can be used to predict the thickness of the film that can be spun for various molecular weights and solution concentrations of a given polymer and solvent system
3. Soft Bake
Partial
evaporation of photoresist solvents Improves adhesion Improves uniformity Improves etch resistance Improves linewidth control Optimizes light absorbance characteristics of photoresist
the mask image to the resistcoated wafer Activates photosensitive components of photoresist Quality measures:
linewidth resolution overlay accuracy particles & defects
UV Light Source
Mask
Resist
Alignment errors (many different types) Mask aligner equipment Double sided alignment especially important in micromachines
Contact printing Proximity printing Self-aligned (see next) Projection printing : R = 2bmin = 0.6 l/NA
z R = 2b min ~ 3 l (s ) 2
z R = 2b min ~ 3 l ) 2
5. Develop
Soluble areas of photoresist are dissolved by developer chemical Visible patterns appear on wafer
windows islands
developer dispenser
Quality measures:
line resolution uniformity particles & defects
vacuum chuck to vacuum pump spindle
6. Hard Bake
Evaporate remaining photoresist
Improve adhesion Higher temperature than soft bake
7. Development Inspection
Optical
Selective removal of upper layer of wafer through windows in photoresist: subtractive Two basic methods:
wet acid etch dry plasma etch
CF4
Quality measures:
defects and particles step height selectivity critical dimensions
Plasma
O2
Photoresist has been completely removed Pattern on wafer matches mask pattern (positive resist) Quality issues:
defects particles step height critical dimensions
Yellow light and low particle size/density curves Cleaning steps RCA1-peroxides and NH3-removes organics RCA2-peroxide and HCl-removes metals Dry vs. wet cleaning Supercritical cleaning-no liquid phase
Yield is the reason for the cleanrooms-the smaller the features the more important the cleanroom In the future people will work outside the cleanroom and only wafers will be inside the clean environment At universities, modularity (many different materials and processes) is more important than yield
CD and Tg
CD (e.g. 90 nm) i.e. critical dimension (the smallest feature made in a certain process) Glass transition temperature, above Tg the resist picks up dirt quite readily and the profile might get degraded
Making a Mask
Software Mask
Moores Law
Observation and self fulfilling prophecy --not a physical law Is it running out of steam?