UNIT PROCESS

DIFFUSION - PART 2

Dr. S. K. Bhatnagar
Professor and Head, R & D Center for Engg. And Science J. E. C. Kukas, Jaipur

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Tube

Open tube Sealed tube

Diffusion source

Solid Liquid Gaseous

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S. K. Bhatnagar and O. P. Wadhawan "Improvements In Or Relating To An Apparatus For Diffusion Of Impurities In Semiconductor Using Liquid Dopants

Patent No.2291/CAL/73 (1973)

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Atomic model of diffusion

Purpose - to understand
diffusion process at high conc. mechanism for diffusion

Significance of atomic model

crystal is isotropic Diffusion coeff. is a function of Doping conc. Depth level lattice sites are minima of potential well dopant atom may occupy substitutional or

interstitial lattice site.

Kinds of exchange
Direct exchange

Vacancy exchange

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Fairs Vacancy Mechanism

Used to describe diffusion at
Low and moderate conc.
Temperatures < 10000 C

According to this mechanism each atom in

Si forms a covalent bond with its four nearest neighbors in order to fill its vacancy

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Diffusion in SiO2
Simple class of diffusion

Dopant distribution at Si SiO2 interface

is assumed to be in equilibrium Dopant conc. At the interface is described by segregation coeff.

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Techniques for measurement of diffusivity

SIMS Technique Secondary Ion Mass

Spectroscopy

High energy ions are directed towards the

surface of the specimen so as to sputter the material Emitted ions are detected and measured Diffusivity of the dopant is estimated from this

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Techniques for measurement of diffusivity - RBS

RBS Technique Rutherford Back

Scattering Technique

He ions bombard the target at high energy The ions penetrate significant distance before

being scattered. Back scattered ions are detected. Diffusivity is estimated from this data

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Techniques for measurement of diffusivity BST

BST test Bias Temperature Stress Test
MOS structure is fabricated
Electric bias and temperature are applied C V characteristics are plotted Diffusivity is estimated from this data

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Mechanism for diffusion in SiO2

Exchange mechanism
Interstitial mechanism Substitutional

Ring mechanism
Vacancy mechanism Crowdion mechanism

mechanism Interstitially mechanism Relaxation mechanism Grain Boundary Diffusion mechanism

Divacancy mechanism
Dislocation Pipe

mechanism Diffusion Surface Diffusion mechanism

Interstitial Vacancy and Substitutional S. K. Bhatnagar (2009) mechanisms are of importance

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Kinds of Diffusion
D is a function of dopant conc. and Temperature Intrinsic Diffusion N << ni ; D is constant under isothermal conditions Extrinsic Diffusion N = ni ; drift current can not be ignored. D is a function of N. Lateral Diffusion side ways diffusion is substantial. Three dimensional diffusion is to be considered.
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What is lateral diffusion? State its significance in IC Technology. Raj Univ. 2002, 2003
Diffusion is an isotropic process. In a masked diffusion, the dopant diffuses in all the directions. Near the mask edge side ways diffusion is substantial. This is called Lateral Diffusion. To take this into account three dimensional diffusion is to be considered. In IC technology this results in loss of critical dimensions.
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Lateral diffusion may be as large as 0.8 x vertical junction depth. However IC technology has used this phenomenon gainfully also by clever calculation and accurate control over diffusion process. This is clear from the accompanying diagrams. Post implantation thermal process is carefully designed to take advantage of the lateral diffusion.

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As the depth of diffusion depends on crystallographic orientation, lateral diffusion can, in principle, be controlled by proper choice of crystal orientation and diffusing element.

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Important Parameters
Surface Conc. the conc. Of the dopants

at the surface. This controls the doping profile and junction depth of the next diffusion. Dose 0 : Total quantity of the dopant present per unit volume of the wafer 0 = 0N(x,t)dx

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Explain the electric field effect on diffusion. What is maximum value of electric field enhancement factor? Raj. Univ. 2004
When the dopants are ionized at the

diffusion temp. a local electric field is set up between the ionized impurity atoms and the electrons or holes. The conc. Gradient of these ionized impurity atoms also produces an internal electric field which enhance the diffusivity of ionized impurity atoms.
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Garima page 2.21

This internal electric field is related to

electrical potential V(x) as:

Important Parameters
Junction Depth Depth of the junction

below the wafer surface.

Physical location where the conc. Of the

diffusing species is equal to the conc. Of the background species is called metallurgical junction.

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Measurement of junction depth

By angle lapping and

stainning

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Measurements
Junction Depth

Sheet Resistance
Effective line width Concentration - profile

Junction depth measurement

Angle Lapping
Lapping at 1 to 5 degree angle

Cleaning
Staining: few drops of Nitric acid in 100 c.c.

HF Expose in strong light (1000 watt bulb) for 2 minutes surface of p type material will become dark due to change in reflectivity Measurement Calculation Grooving

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Cooperative Diffusion Effects

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Diffusion Profiles

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 Diffusion Systems

Diffusion Profiles
Measurements Rapid Thermal Annealing (RTP)

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Difference between theory and practice

Spread in values of surface concentration

of the dopant

Theoretical values are not achieved Impurity profile varies from theoretical prediction

Effect of physical location of the wafer in

the furnace

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RS

Distance from gas input end of the diffusion tube

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Solution
Based on Henrys law research was

undertaken Patent No.2291/CAL/73 (1973)

S. K. Bhatnagar and O. P. Wadhawan "Improvements In Or Relating To An Apparatus For Diffusion Of Impurities In Semiconductor Using Liquid Dopants

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Henrys Law: Surface concentration of the dopant is proportional to the partial pressure in gas phase
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Normal equipment Patented equipment

Center of the process tube

RS

Distance from gas input end of the diffusion tube

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Mechanism of diffusion

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