Electromagnetic Interference (EMI) and Filter Design For Switched Mode Power Supplies

Mayank
Agarwal
Digitally signed
by Mayank
Agarwal
Date: 2012.07.05
18:17:04 +05'30'
Electromagnetic Interference (EMI) and filter design for SMPS Centre for Airborne Systems, DRDO

1
TABLE OF CONTENTS

(A). Abstract .................................................................................................................................................................... 3
(B). List of Figures .......................................................................................................................................................... 4

1. Fundamentals of EMI/EMC ..................................................................................................................................... 6
What is EMI/EMC ....................................................................................................................................................... 7
Source of Electromagnetic Interference ................................................................................................................... 7
The three elements of an EMI problem .................................................................................................................... 8
Types of coupling in EMI ........................................................................................................................................... 9
Impedance coupling .............................................................................................................................................. 10
Inductive coupling ................................................................................................................................................ 11
Capacitive coupling ............................................................................................................................................... 11
Radiative coupling ................................................................................................................................................. 11
Crosstalk ................................................................................................................................................................. 12
Modes of coupling in EMI ........................................................................................................................................ 12
Differential Mode .................................................................................................................................................. 12
Common Mode ..................................................................................................................................................... 13

2. Medium and High frequency modeling of components ................................................................................... 14
Capacitors ................................................................................................................................................................... 15
Inductors ..................................................................................................................................................................... 16
Power diode with reverse recovery ......................................................................................................................... 18
Power MOSFET ......................................................................................................................................................... 21

3. Measurement of EMI in DC-DC converters ....................................................................................................... 29
What are DC-DC power converters ....................................................................................................................... 30
Fly-back converter ..................................................................................................................................................... 30
Basic topology of fly-back converter ....................................................................................................................... 31
Line Impedance Stabilization Network (LISN) ..................................................................................................... 32
Measurement of EMI ................................................................................................................................................ 35

4. EMI filter design for DC-DC converters ............................................................................................................. 43

2
Introduction ............................................................................................................................................................... 44
Topology of an EMI filter ......................................................................................................................................... 44
Basis of determining filter component values ....................................................................................................... 45
Common mode ...................................................................................................................................................... 45
Differential mode .................................................................................................................................................. 47
Software based EMI noise separation method ....................................................................................................... 48
Design procedure for EMI filter .............................................................................................................................. 49
Software implementation of EMI filter design ...................................................................................................... 51
SPICE verification of the designed EMI filter ........................................................................................................ 53
Comparison of results obtained with and without filter ...................................................................................... 62

5. Conclusion ................................................................................................................................................................. 63

6. References .................................................................................................................................................................. 64


3
ABSTRACT

The goal of this work was to simulate the Electromagnetic Interference (EMI) generated in a fly-back
converter, design a filter based on the generated data and to study the EMI characteristics of the power
converter after integration with the filter.
To achieve the designated goals, SPICE models of Power MOSFET and Power diode were improved to
simulate the switching characteristics and the reverse recovery characteristics respectively. These improved
models are then integrated in the fly-back converter and the EMI data is generated. Based on the data
generated, a filter is designed and then integrated to the power converter. The EMI characteristics of the
circuit are again generated and a significant improvement in the EMI characteristics is observed.

4
LIST OF FIGURES

S. No Figure Page

1. The three elements of an EMI problem 8
2. Possible modes of coupling in EMI 9
3. Impedance coupling between System A and System B 10
4. Avoiding common impedance between System A and System B 11
5. Differential mode noise 12
6. Common mode noise 13
7. Series R-L-C model for capacitor with parasitic effects 15
8. Impedance response of a series R-L-C model for capacitor 15
9. Impedance response of an ideal capacitor 16
10. Parallel R-L-C model for inductor with parasitic effects 17
11. Impedance response of a parallel R-L-C model for inductor 17
12. Impedance response of an ideal inductor 18
13. Reverse recovery current of a diode 18
14. Input voltage and Output current of a diode 20
15. Close-up view of the reverse recovery characteristic of diode 20
16. Test structure for the proposed MOSFET model 21
17. Internal schematic diagram of the proposed MOSFET model 22
18. Step response of gate-source voltage 27
19. Step response of drain-source voltage 28
20. Step response of drain current 28
21. Ideal fly-back converter schematics 31
22. Output characteristics of an ideal fly-back converter 32
23. Measurement setup for conducted EMI 33
24. Schematic of LISN 33
25. Impedance offered by LISN for the full frequency spectrum (10Hz to 100 MHz) 34
26. Impedance offered by LISN in the high frequency range (10kHz to 100MHz) 34
27. Circuit to measure EMI generated by fly-back converter (with parasitic and realistic
elements)
35
28. Output voltage of the fly-back converter with parasitic elements 39
29. Output voltage ripple 39
30. FFT of the output waveform 40
31. Frequency vs. live voltage (dBV) 40
32. Frequency vs. neutral voltage (dBV) 41
33. Common mode noise (in dBV) 42
34. Differential mode noise (in dBV) 42
35. Topology of an EMI filter 45
36. Common mode noise equivalent circuit 45
37. Differential mode noise equivalent circuit 45
38. Common mode noise equivalent circuit 46
39.
Equivalent circuit of Fig. 38 if Z
P
>>
1
w(2Cy)
and w(Lc + Ld/2) >> 25
46
40. Equivalent circuit of Fig. 39 after applying reciprocity theorem 46
41. Filter attenuation for common-mode noise 46

5
42. Differential mode noise equivalent circuit 47
43. Equivalent circuit of Fig. 42 if ZC
X1
>> 100; ZC
X2
>> Z
P
; and wL
DM
>> 100 47
44. Equivalent circuit of Fig. 43 after applying reciprocity theorem 47
45. Filter attenuation for differential-mode noise 47
46. Circuit diagram for separation of conductive EMI signals 48
47. Flowchart of software based separation of conductive EMI signals 48
48. Design steps of the presented filter design 50
49. Developed MATLAB GUI for conducted EMI filter design 51
50. EMI filter results obtained for the fly-back converter 52
51. EMI filter using the data obtained by the GUI 53
52. Attenuation curve for the EMI filter designed 53
53. LISN followed by EMI filter and fly-back converter 54
54. Output voltage of the fly-back converter with LISN and EMI filter 58
55. Output voltage ripple with EMI filter 59
56. FFT of the output voltage with EMI filter 59
57. Frequency vs. live voltage with EMI filter (in dBV) 60
58. Frequency vs. neutral voltage with EMI filter (in dBV) 60
59. Common mode noise with EMI filter (in dBV) 61
60. Differential mode noise with EMI filter (in dBV) 61
61(A) Common mode noise without EMI filter 62
61(B) Common mode noise with EMI filter 62
62(A) Differential mode noise without EMI filter 62
62(B) Differential mode noise with EMI filter 62


6

1. Fundamentals of EMI/EMC

7
WHAT IS EMI/EMC

Electromagnetic Interference can be described as the degradation of a device or system caused by an
electromagnetic disturbance. An electromagnetic disturbance is any phenomena, which may degrade the
performance of a device, equipment or system, or adversely affect living or inert matter. An example of EMI
affecting living matter is the current controversy regarding portable cellular telephones causing brain
tumours.
Therefore, an electromagnetic disturbance can be an unwanted signal or even a change in the propagation
medium itself. A change in the propagation medium can attenuate the signal and have a direct effect on the
level of disturbance.
On the other hand, EMC (Electromagnetic Compatibility) can be described as the ability of different pieces
of electrically operated equipment to work in close proximity to each other without causing any mutual
interference. EMC therefore implies the ability of equipment to function satisfactorily in its electromagnetic
environment without introducing intolerable electromagnetic disturbances to any other equipment in that
environment. EMC is a twofold occurrence and consists of emissions and immunity.
First, EMC implies that the equipment will not generate unacceptable interference emission levels, which
could cause interference; and second, EMC implies that the equipments intrinsic immunity levels are such
that it can tolerate ambient levels of interference without degradation of performance.
Therefore, EMC means that a device must be capable of operating in all modes in the environment for which
it was designed without degrading its own performance or that of any nearby equipment.

SOURCES OF ELECTROMAGNETIC INTERFERENCE

An electromagnetic environment can be described as the electromagnetic conditions existing at a given
location. The EMI environment includes interference emanating from natural sources like lightning and
atmospheric static to the various man-made sources of interference such as vacuum cleaners, washing
machines, power tools, computers, cellular phones, mobile radios and even electronic toys.
Natural sources can be either terrestrial or extra-terrestrial in nature. Man-made sources include intentional
or unintentional radiators. Within the scope of man-made noise sources, we can break it down even further
into Inter-system interference and Intra-system interference. Inter-system interference is EMI in a system
caused by an electromagnetic disturbance generated by another system; whereas Intra-system interference is
self-generated EMI present in a system.
There is very little that can be done to prevent electromagnetic energy generated from natural interference
sources. However, natural sources do not create that much of a problem except for perhaps, surges and
spikes on power lines induced by lightning strikes. It is also very difficult to prevent EMI from intentional
sources of electromagnetic energy. Cellular telephones and two-way radios are a major problem and can

8
create havoc for example in hospital environments. It is therefore crucial that electronic equipment be made
immune or less susceptible to environmental interference.
However, the major source of all interference is generated from unintentional manmade sources. This is due
to the vast amount of electrical and electronic equipment in use.

THE THREE ELEMENTS OF AN EMI PROBLEM

There are three essential elements to any EMC problem. There must be an EMI source or an electromagnetic
disturbance, a receptor or victim that cannot function properly due to the electromagnetic phenomenon,
and a path between them that allows the source to interfere with the receptor. Each of these three elements
must be present at the same time in order to have an electromagnetic disturbance or EMI. Identifying at least
two of these elements and eliminating or attenuating the interference from one of them can solve EMC
problems.
Interference signals are established whenever electrons move. Therefore, any current flow may cause either
direct coupling to other circuits or radiated fields, which may in turn couple unwanted signals into other
circuits.
Their frequency, bandwidth and amplitude can characterize sources of interference. The propagation
medium of EMI below 30 MHz tends to be mains-borne or conducted. The interference travels along the
power cord or signal lines from the source to the receptor or victim circuit. The conducted interference is not
easily attenuated over distance.
The radiated portion of EMI emissions is borne as an electromagnetic wave, propagating through the air or
any other non-conducting media. Generally, the higher the EMI in the frequency spectrum, the more easily it
will radiate. EMI and EMC are becoming more of a problem due to the trend to produce equipment in
smaller packages operating at very high speeds and processing rates.
The use of higher speed switching logic increases emissions from printed circuit boards. Also the use of
devices with low operating voltages and currents, packaged more closely together, increases the potential for
intra-system interference and reduced immunity (increased susceptibility).

Coupling Path

Fig. 1- the three elements of an EMI problem

Source
(Culprit)
Device
(Victim)
Electromagn

TYPES OF C

Any situat
complemen
victim, whic
Knowledge
coupling fa
performanc
emissions w
aspects are c
Putting sou
Some of the

The most co
wiring and
electromagn
coupling be
layout and
screening p
coupling ca
materials m
conductors
There are ba
1. Imp
etic Interfere
COUPLING
ion, in wh
ntary aspects
ch is suscepti
of how the
ctor is often
ce specificati
will also impr
considered s
urce and vict
e possibilities
ommon culp
d mechanic
netic fields,
etween equip
proximity of
lanes will en
an be either c
may also redu
in most prac
asically 5 mo
pedance coup
nce (EMI) and
IN EMI
hich the qu
s as discusse
ible to this in
e source emi
n the only w
ion. The two
rove the susc
eparately.
im together
s are shown i
Fig
prit in EMC s
al structure
which coup
pment is mo
f interfering
nhance an int
capacitive or
uce the field
ctical situatio
odes of coupl
pling
d filter design
uestion of e
d above. An
nterference. I
issions are c
ay to reduce
o aspects ar
ceptibility, th
shows the p
in the followi
ig. 2 Possibl
situation is t
es. These e
ple with the
odified by th
and victim
terfering sign
r inductive a
d by absorpt
ons.
ling, namely
for SMPS
electromagn
ny such situa
If either of th
coupled to t
e interferenc
re frequently
hough this is
potential inte
wing figure.
le modes of c
the antenna l
elements ca
circuits. In
he presence o
equipment a
nal by reflect
and depends
tion, though
etic compat
ation must h
hese is not pr
the victim is
ce effects, if
y reciprocal
s not always
erference rou
coupling in EM
like behaviou
n transfer
practical si
of screening
and especiall
tion or atten
on orientati
h this is negl
Centre fo
tibility arise
have a sourc
resent, there
s essential, s
a product is
that is mea
true. For an
utes that exis
MI
ur of cables,
energy via
ituations, int
and dielectr
ly their respe
uate it by ab
ion, length a
ligible comp
or Airborne Sy
es, invariab
ce of interfe
is no EMC p
since a redu
s to continue
asures taken
n easy analys
st from one t
PCB tracks,
electric, m
ntra-system a
ric materials
ective cables
bsorption. Ca
and proximit
pared with th
ystems, DRDO
ly has two
erence and a
problem.
ction in the
e to meet its
to improve
is, these two
to the other.
and internal
magnetic or
and external
, and by the
s. Ground or
able-to-cable
ty. Dielectric
he effects of
O
9
o
a
e
s
e
o
.
l
r
l
e
r
e
c
f
Electromagn

2. Ind
3. Cap
4. Rad
5. Cro

1. Impedan
When the v
be coupled
the noise pr
Shown belo
victim circu
current with
victim circu

The solutio
way that th
common im

etic Interfere
ductive coupl
pacitive coup
diative coupl
osstalk
nce coupling
victim shares
to the victim
roduced in th
ow in the figu
uit share a c
h time in th
uit in series w
n is to avoid
here is no c
mpedance and
nce (EMI) and
ling
pling
ing
g
common im
m and may in
he source can
ure is commo
common gro
he source cir
with its own s
Fig. 3 Imp
d any commo
common im
d hence solv
d filter design
mpedance wit
nterfere with
n also couple
on mode imp
und connect
rcuit produc
source.
pedance coup
on path betw
pedance. Co
es the proble
for SMPS
th the source
h its working
e either induc
pedance coup
tion. This co
ces a voltage
pling between
ween the sou
onnection as
em.
e, any noise,
g. Apart from
ctively or cap
pling. As sho
onnection is
across this
n System A a
urce and vict
s shown in
Centre fo
which is pro
m conductive
pacitvely to t
own in the ci
inductive in
connection

nd System B
im and conn
the followin
or Airborne Sy
oduced in the
ely coupled to
the victim.
ircuit, the so
n nature. Th
which is cou
nect the circu
ng figure av
ystems, DRDO
e source, will
o the victim,
urce and the
he change in
upled to the
uit in such a
voids having
O
10
l
,
e
n
e
a
g
2
3
4
I
o
Electromagn

This proble
PCB.

2. Inductiv
The magne
placed near
conductors.
orientation
magnetic co
whether or
the circuits

3. Capaciti
Changing v
induce a vol
Both mutua
conductors.

4. Radiativ
If the disturb
of the instal
etic Interfere
Fig.
m and its so
ve coupling
tic field form
rby. The m
. The mutua
and separat
oupling is a
not there is a
were isolated
ive coupling
voltage on on
ltage on it. T
al capacitanc
. An optimal
ve coupling
bance on the
lation may a
nce (EMI) and
4 Avoiding
olution tell th
med around
agnitude of
al inductanc
tion distance
voltage gen
a direct conn
d or connect
g
ne conductor
The magnitud
ce and mutua
l placement m
e power supp
act as antenn
d filter design
g common im
he importanc
a conducto
f the voltage
ce depends o
e and the pre
nerator in se
nection betwe
ed to ground
r creates an e
de of this vol
al inductance
must be decid
ply or data n
nas and radi
for SMPS
mpedance bet
ce of proper
r when curr
e developed
on the areas
esence of any
eries with th
een the two c
d.
electric field,
ltage depend
e are affected
ded to minim
network cont
iate Electrom
tween System
layout of com
rent flows th
depends up
s of the sou
y magnetic s
he victim cir
circuits; the i
, which may
ds on the mut
d by the phy
mize the effec
ains high fre
magnetic fiel
Centre fo
m A and Syste
mponents wh
hrough it can
pon the mu
urce and vict
screening. Th
rcuit. The co
induced volt
couple with
tual capacitan
sical separati
cts of these s
equency com
ld which can
or Airborne Sy

em B
while routing
n couple to
utual induct
tim current
The equivalen
oupling is un
tage would b
a nearby co
nce of these
tion of sourc
stray impedan
mponents, oth
n be picked
ystems, DRDO
them on the
a conductor
tance of the
loops, their
nt circuit for
naffected by
e the same if
nductor and
conductors.
e and victim
nces.
her elements
up by other
O
11
e
r
e
r
r
y
f
d
m
s
r
c
t
r

5
Electromagn

conductors.
towards radi
radiate only
5. Crosstal
Apart from
PCB traces
and closer t

MODES OF

Understand
solving any
in the follow

1. Differen
As shown in
another and
mode interf
own.

etic Interfere
All conduct
iative couplin
when their li
lk
inductive an
through dist
o reality. Th
F COUPLING
ding how any
EMC proble
wing paragra
ntial Mode
n the figure
d returns th
ference betw
nce (EMI) and
tive parts of
ng. It may be
inear dimens
nd capacitive
tributed indu
e phenomen
G IN EMI
y stray noise
em. The basi
aphs.
below, the cu
rough the o
ween the two
d filter design
f the electric
e however no
sion exceeds
e coupling at
uctance and
non is also cal
e generated
c modes of c
urrents carri
ther. A radi
wires; simila
Fig. 5 D
for SMPS
cal installatio
oted that con
s approximat
t single poin
capacitance.
lled as crosst
in a source
coupling are
ied in differe
iated field ca
arly, the diff
Differential m
on may serve
nductive elem
tely half of th
t as discusse
. This type o
talk.
circuit is co
the different
ential mode f
an couple to
ferential curr
mode noise
Centre fo
e as antenna
ments such as
he wavelength
d above, cou
f coupling of
upled to the
tial and comm
flows in one
this system
rent will indu
or Airborne Sy
as and henc
s cables and
h.
upling also o
f noise is mo
e victim circ
mon modes
cable from
m and induce
uce a radiate

ystems, DRDO
e contribute
slots start to
ccurs on the
ore common
cuit is key to
as explained
one block to
e differential
ed field of its
O
12
e
o
e
n
o
d
o
l
s
2
Electromagn

2. Commo
The cable al
currents ve
coupling to
equipment
susceptible.
point and t
mode curre
EMC point

Although it
there may a
occurs when
external gro
physical lay
layout.

etic Interfere
on Mode
lso carries cu
ry often hav
o the loop fo
to ground,
Alternativel
the cable con
ents means th
of view.
t was said ab
also be a com
n the two-sig
ound. These
yout, and are
nce (EMI) and
urrent in com
ve nothing t
ormed by th
and may t
ly, they may
nnection, an
hat no cable,
bove that com
mponent of
gnal conduct
e impedances
only under t

d filter design
mmon mode
to do with t
he cable, the
then cause
y be generate
nd be respon
, whatever si
Fig. 6
mmon mode
common m
tors present d
s are domin
the circuit de
for SMPS
, that is, all f
the signal cu
ground pla
internal dif
ed by intern
nsible for rad
ignals it may
Common mo
e currents m
mode current
differing imp
nated at RF b
esigners con
flowing in th
urrents. The
ane and the
fferential cu
nal noise vol
diated emiss
y be intended
ode noise
may be unrela
which is du
pedance to th
by stray cap
ntrol if that p
Centre fo
e same direc
y may be in
various imp
urrents to w
tages betwee
sions. The ex
d to carry can
ated to the i
ue to the sig
heir environm
pacitance and
person is also
or Airborne Sy
ction on each
nduced by e
pedances con
which the eq
en the groun
xistence of R
n be viewed

intended sign
gnal current.
ment, repres
d inductance
o responsible
ystems, DRDO
h wire. These
xternal field
nnecting the
quipment is
nd reference
RF common
as safe from
nal currents,
Conversion
sented by the
es related to
e for physical
O
13
e
d
e
s
e
n
m
,
n
e
o
l

14

2. Medium and High frequency
modelling of components
Electromagn

CAPACITO

An actual ca
internal stru
frequency w
types of resi
an effective
frequency. A
of the diele
where the c
chosen to m

etic Interfere
RS
apacitor incl
ucture. This
where it rings
istive effects
e series resis
A parallel res
ectric materia
apacitor is u
model the filte
F
nce (EMI) and
ludes several
inductance
s with the cap
in a capacito
stance (ESR)
sistance may
al. This para
used as a low
er capacitors
Fig. 7 Seri
C
Fig. 8 Imped
d filter design
parasitic effe
may domina
pacitance un
or. Dielectric
). Dielectric
y be used to m
allel resistanc
impedance e
s and their pa
es R-L-C mod
Cmain = 1F,
dance respon
for SMPS
fects. One of
ate the impe
nless sufficien
c losses and t
losses, whic
model the le
ce is negligib
element. The
arasitic effec
del for capac
, Ls = 22.5nH
nse of a series
these is the s
dance of the
ntly damped
the non-zero
ch dominate
akage of the
ble, however
e series R-L-
ts.
citor with par
H, Rs = 0.025
R-L-C mode
Centre fo
series inducta
e component
by resistive
o resistance o
the ESR, ca
capacitor du
r, at the EM
C model sho

rasitic effects;
5
el for capacito
or Airborne Sy
tance of the l
t above the s
effects. Ther
of the leads c
cause it to in
ue to the fini
MI frequencie
own in Fig. 7
;

or
ystems, DRDO
eads and the
self-resonant
re are several
contribute to
ncrease with
ite resistivity
es of interest
7 is therefore
O
15
e
t
l
o
h
y
t
e
Electromagn

INDUCTOR

The parasit
throughout
parasitic cap
of the filter
damped or
The resistiv
frequency. A
of the induc
series resist
frequencies
and the dep
is negligible
hand, is dire
core loss, be
core materi
and flux lev

etic Interfere
RS
tic effects of
the compo
pacitance ma
r, giving the
even domina
ve impedance
At low frequ
ctive reactan
tance becom
, the skin de
pendence of t
e below the k
ectly proport
ecomes impo
al, may be m
vel.
nce (EMI) and
Fig. 9
f inductors
nent. For si
ay resonate w
component
ated, howeve
e of an indu
uencies, losse
nce at the low
mes less imp
epth is only
the resistanc
kHz range fo
tional to freq
ortant. Core
modelled by a
d filter design
9 Impedanc
are quite co
mplicity, thi
with the mai
capacitive c
er, by lossy p
uctor, compri
s are determ
w frequencies
portant. Alt
a weak func
ce on this ski
or the wire d
quency. As th
losses, inclu
a shunt resist
for SMPS
ce response of
omplex. An
is effect is m
in inductor a
characteristic
arasitic effec
ising both w
mined by the
s of power tr
though the
ction of freq
in depth, alth
dimension o
he reactive im
uding both hy
tance; howev
f an ideal cap
n inductor h
modelled wi
at a frequenc
cs above this
cts.
wire and core
series wire r
ransmission.
skin effect
uency, inver
hough invers
of interest. Th
mpedance ri
ysteresis effe
ver this resist
Centre fo
pacitor
has winding
th a parasiti
cy well within
s frequency.
e losses, is a
esistance wh
At higher fr
increases th
rsely proport
sely proportio
he inductive
ses, however
cts and eddy
tance is a fun
or Airborne Sy

capacitance
ic shunt cap
in the range
This resona
complicated
hich may be
frequencies, h
his resistanc
tional to its
ional at high
e reactance, o
r, the second
y currents in
nction of bot
ystems, DRDO
e distributed
pacitor. This
of operation
ance may be
d function of
on the order
however, the
ce at higher
square root,
frequencies,
on the other
d type of loss,
duced in the
th frequency
O
16
d
s
n
e
f
r
e
r
,
,
r
,
e
y
Electromagn

In addition
densities du
however, th
independen
accurate mo
R-L-C mod
represents t

etic Interfere
F
to these par
ue to skin effe
hese effects w
nt of frequen
odel for indu
del, C
w
repr
the core loss
Fig
nce (EMI) and
Fig. 10 Para
Lm
rasitic effects
fects may cha
were neglecte
cy. The circu
uctors over th
resents the e
effects.
g. 11 Imped
d filter design
allel R-L-C m
main = 3.3mH
s, variations
ange the actu
ed in modelli
uit shown in
he measurab
effects of th
dance respon
for SMPS
model for indu
H, Cw = 30p
of core perm
ual inductanc
ing the induc
Fig. 10 was
ble EMI frequ
he distribute
nse of a parall
uctor with pa
pF, Rc = 22.3k
meability ove
ce of a compo
ctors. The co
therefore ch
uency range
ed winding
lel R-L-C mo
Centre fo

arasitic effect
k
er frequency
onent over fr
ore resistance
hosen as a con
(10 kHz to 3
capacitance
del for induc
or Airborne Sy
ts;
y and change
frequency. Fo
e was also as
nvenient and
30 MHz). In
and R
c
pre

ctor
ystems, DRDO
es in current
or simplicity,
ssumed to be
d reasonably
n this parallel
edominantly
O
17
t
,
e
y
l
y
Electromagn

POWER DI

Reverse reco
occurs whe
transient rev
The diode m
model whic
reverse reco
during com
diode is sho

The diode m
recovery ch
etic Interfere
ODE WITH
overy plays a
en a forward
verse curren
models wide
ch includes th
overy of the
mmutation to
own in Fig. 1
model availa
aracteristics.
nce (EMI) and
Fig. 12
REVERSE R
an important
d conducting
nt to flow at h
ely used in ci
he effects of c
diode. Thus,
o the no-con
3.
Fig
able in SPIC
. The SPICE
d filter design
2 Impedan
RECOVERY
t role in the a
g diode is t
high reverse v
ircuit simula
charge storag
, these diode
nducting stat
g. 13 Revers
CE is extende
macro-mod
for SMPS
nce response o

accuracy of s
turned off ra
voltage.
ators such as
ge during rev
e models alw
te. The reve
se recovery cu
ed by provid
el code used
of an ideal in
simulation of
apidly, and
s SPICE are b
verse recover
ways exhibit a
erse recovery
urrent of a di
ding addition
to model th
Centre fo
ductor
f a dc-dc con
the internal
based on the
ry operation
an instantane
y current cha
iode
nal data so a
e diode is as
or Airborne Sy

nverter. Reve
lly stored ch
e original ch
but does no
eous or snap
aracteristic o
as to include
follows:
ystems, DRDO
erse recovery
harge causes
harge control
t provide for
ppy recovery
of a realistic
e the reverse
O
18
y
s
l
r
y
c
e

19

Reverse recovery diode

*reverse recovery
Vin 1 0 pulse (-10 10 600n 0 0 600n 1200n)

Rin 1 2 10

Xd1 2 0 40EPS08

.SUBCKT 40EPS08 A K
D1 A K 40EPS08
.MODEL 40EPS08 d (
+IS=1e-15 RS=0.00426912 N=0.926332 EG=0.6
+XTI=0.5 BV=800 IBV=0.0001 CJO=1e-11
+VJ=0.7 M=0.5 FC=0.5 TT=1e-09
+KF=0 AF=1 )
.ENDS

*reverse recovery

.tran 1n 5600n 0 1n
.probe

.end

Diode Model Parameters
Model Parameter Description Unit Value Specified

IS Saturation current A 1E-15
RS Parasitic resistance Ohm 0.00426912
N Emission coefficient - 0.926332
EG Bandgap voltage (barrier height) eV 0.6
XTI IS temperature exponent - 0.5
BV Reverse breakdown knee voltage V 800
IBV Reverse breakdown knee current A 0.0001
CJO Zero-bias p-n capacitance F 1E-11
VJ p-n potential V 0.7
M p-n grading coefficient - 0.5
FC Forward-bias depletion capacitance coefficient - 0.5
TT Transit time Sec 1E-9
KF Flicker noise coefficient - 0
AF Flicker noise exponent - 1

Electromagn

etic Interfere
Fig
nce (EMI) and
Fig. 14
g. 15 Close-
d filter design
4 Input volt
up view of th
for SMPS
tage and Outp

he reverse rec
tput current o
overy charac
Centre fo
of diode
cteristics of di
or Airborne Sy

iode
ystems, DRDOO
20
Electromagn

POWER M

The commo
it also has it
the drain-to
linearity of t
In this sect
mentioned
drain-sourc
where it cor

etic Interfere
OSFET
on PSpice m
ts lacks for s
o-source resi
the MOS cap
tion, a Powe
parameters.
ce voltage, dr
rrectly predic
nce (EMI) and
odel for the
some critical
istance relate
pacitor again
er MOSFET
The chosen
rain current
cts the EMI g
Fig. 16
d filter design
power MOS
simulating p
ed to the sim
nst applied vo
is modelled
approach su
and gate-sou
generated by
Test Structur
for SMPS
SFET devices
problems. Th
mulation temp
oltage.
taking into
uccessfully re
urce voltage
y the converte
re for the pro

is satisfying
hese lacks co
perature and
account the
eproduces th
. The model
er.
oposed MOSF
Centre fo
g for most of
onsist especia
d in almost n
e non-linear
e step respon
is employed
FET model
or Airborne Sy
f the designer
ally in poor m
no-modelling
rity aspects o
nse characte
d in a fly-bac

ystems, DRDO
rs needs but
modelling of
g of the non-
of the above
ristics of the
ck converter
O
21
t
f
-
e
e
r
Electromagn

The SPICE

POWER M

.OPTION

Vcc 1 0
Vin 10

l1 1 2
r1 2 3
r2 10 1
ls 13 0

Xm1 3 1

.subckt
*
* 10 =
*
*******
*
*------
* PACKA
etic Interfere
Fig
macro-mode
MOSFET Mod
NS METHOD=
0 dc 50
0 pulse(0
51n
5
11 56
0 3n
11 13 mtp6
t mtp6n60/
Drain 20
**********
----------
AGE INDUCT
nce (EMI) and
g. 17 Interna
el code for th
del
=GEAR
10 0 20n
6n60/mc
mc 10 20 3
= Gate 30
**********
----------
TANCE
d filter design
al schematic
he above sho
20n 510n
30
= Source
**********
EXTERNAL
for SMPS
diagram of t

own schemati
4u)
***********
PARASITICS
the proposed
ic is as follow
**********
S --------
Centre fo
MOSFET mo
ws:
***********
-----------
or Airborne Sy

odel
**********
----------
ystems, DRDO
*****
-----
O
22

23
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
RDRAIN1 4 11 RDRAIN 0.8036
RSOURCE 31 6 RSOURCE 0.02018
RDBODY 8 30 RDBODY 0.0135
*
RGATE 21 2 5
*
*--------------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 2.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 1.31e-09
*
*--------------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------------
*
.MODEL RDRAIN R(
+TC1 = 0.008891
+TC2 = 3.056e-05)
*
.MODEL RSOURCE R(
+TC1 = -0.003198
+TC2 = 2.60004e-05)
*
.MODEL RDBODY R(
+TC1 = 0.003945
+TC2 = 9.54752e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 13
+GAMMA = 2.6
+PHI = 0.6
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15

24
+NSS = 0
+NFS = 6.59e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+VMAX = 0
*+NEFF = 1
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 0
+KAPPA = 0.2)
*
*--------------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 1.129e-09
+VJ = 1.943
+M = 1.476
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.532e-11
+RS = 0
+N = 1.062
+TT = 2.5e-07
+CJO = 9.725e-10
+VJ = 1.127
+M = 0.6627
+EG = 1.11
+XTI = 5
+KF = 0
+AF = 1
+FC = 0.5
+BV = 671
+IBV = 0.00025)
.ENDS

.tran 1n 1u 0 1n
.plot tran v(11,13) V(3,13)
.probe
.plot tran i(Xm1.ld)
.end


25
Resistor Model Parameters (RDRAIN)

TC1 Linear temperature coefficient
o
C
-1
0.008891
TC2 Quadratic temperature coefficient
o
C
-1
3.056E-5

Resistor Model Parameter (RSOURCE)

o
C
-1
-0.003198
o
C
-1
2.60004E-5

Resistor Model Parameter (RDBODY)

o
C
-1
0.003945
o
C
-1
9.54752E-6

NMOS MOSFET Model Parameter

LEVEL Model index - 3
VTO Zero bias threshold voltage V 3.8
KP Transconductance coefficient amp/v
2
13
GAMMA Bulk threshold parameter Volt
1/2
2.6
PHI Surface potential V 0.6
RD Drain ohmic resistance Ohm 0
RS Source ohmic resistance Ohm 0
CBD Zero-bias bulk drain p-n capacitance Farad 0
CBS Zero-bias bulk source p-n capacitance Farad 0
IS Bulk p-n saturation current A 1E-14
PB Bulk p-n bottom potential V 0.8
CGS0 Gate-source overlap capacitance/channel width Farad/meter 0
CGD0 Gate-drain overlap capacitance/channel width Farad/meter 0
CGB0 Gate-drain overlap capacitance/channel length Farad/meter 0
RSH Drain, source diffusion sheet resistance Ohm/square 0
CJ Bulk p-n zero-bias bottom capacitance/area Farad/meter
2
0
MJ Bulk p-n bottom grading coefficient - 0.5
CJSW Bulk p-n zero-bias sidewall capacitance/length Farad/meter 0

26
MJSW Bulk p-n sidewall grading coefficient - 0.33
JS Bulk p-n saturation current/area Amp/meter
2
1E-14
TOX Oxide thickness Meter 1E-7
NSUB Substrate doping density 1/cm
3
1E15
NSS Surface state density 1/cm
2
0
NFS Fast surface state density 1/cm
2
6.59E11
TPG Gate material type:
+1 = opposite of substrate
-1 = same as substrate
0 = aluminium
- 1
XJ Metallurgical junction depth Meter 0
LD Lateral diffusion Meter 0
UO Surface mobility cm
2
/v-sec 600
VMAX Maximum drift velocity m/s 0
FC Bulk p-n forward bias capacitance coefficient - 0.5
DELTA Width effect on threshold - 0
THETA Mobility modulation Volt
-1
0
ETA Static feedback - 0
KAPPA Saturation field factor - 0.2

Diode Model Parameters (DGD)

IS Saturation current A 1E-15
RS Parasitic resistance Ohm 0
N Emission coefficient - 1000
TT Transit time Sec 0
CJO Zero-bias p-n capacitance Farad 1.129E-9
VJ p-n potential V 1.943
M p-n grading coefficient - 1.476
EG Bandgap voltage (barrier height) eV 1.11
XTI IS temperature exponent - 3
FC Forward-bias depletion capacitance coefficient - 0.5
BV Reverse breakdown knee voltage V 10000
IBV Reverse breakdown knee current A 0.001

Electromagn

Diode Mod
Model Para

IS
RS
N
TT
CJO
VJ
M
EG
XTI
KF
AF
FC
BV
IBV

etic Interfere
del Paramete
ameter D

Sa
Pa
Em
T
Ze
p-
p-
Ba
IS
Fl
Fl
Fo
R
R

nce (EMI) and
ers (DBODY
Description
aturation cur
arasitic resist
mission coef
ransit time
ero-bias p-n
-n potential
-n grading co
andgap volta
S temperatur
licker noise c
licker noise e
orward-bias
everse break
everse break
Fig.
d filter design
Y)
rrent
tance
fficient
capacitance
oefficient
age (barrier h
e exponent
coefficient
exponent
depletion ca
kdown knee v
kdown knee c
18 Step res
for SMPS
height)
apacitance co
voltage
current
sponse of Ga

oefficient
te-Source vol
Centre fo
U

A
V
e
V
A

ltage
or Airborne Sy
Unit Valu

A 1.53
Ohm 0
- 1.06
Sec 2.5E
Farad 9.72
V 1.12
- 0.66
eV 1.11
- 5
- 0
- 1
- 0.5
V 671
A 0.00

ystems, DRDO
ue Specified
32E-11
62
E-7
25E-10
27
627

0025

O
27

Electromagn

etic Interference (EMI) and
Fig.
F

d filter design
19 Step res
Fig. 20 Step
for SMPS
sponse of dra

p response of
ain-source vo
f drain curren
Centre fo
ltage
nt
or Airborne Sy ystems, DRDO

O
28

29

3. Measurement of EMI in DC-DC
converters


30
WHAT ARE DC-DC POWER CONVERTERS

DC-DC power converters are employed in a variety of applications, including power supplies for personal
computers, office equipment, aircraft power systems, laptop computers, and telecommunications equipment,
as well as dc motor drives. The input to a dc-dc converter is an unregulated dc voltage Vg. The converter
produces a regulated output voltage V, having a magnitude (and possibly polarity) that differs from Vg. For
example, in the power supply system of the Airborne Early Warning & Control Systems (AEW&CS) the
input supply of 200V/400Hz from the aircraft is rectified to 270V DC by a rectifier unit. This 270V DC is
then supplied to a Multi-output power supply which converts this 270V DC into a number of smaller outputs
using a DC-DC converter.
High efficiency is invariably required, since cooling of inefficient power converters is difficult and expensive.
The ideal dc-dc converter exhibits 100% efficiency; in practice, efficiencies of 70% to 95% are typically
obtained. This is achieved using switched-mode, or chopper, circuits whose elements dissipate negligible
power. Pulse-width modulation (PWM) allows control and regulation of the total output voltage. This
approach is also employed in applications involving alternating current, including high-efficiency dc-ac
power converters (inverters and power amplifiers), ac-ac power converters, and some ac-dc power converters
(low-harmonic rectifiers).

FLYBACK CONVERTER

Fly-back converter is the most commonly used SMPS circuit for low output power applications where the
output voltage needs to be isolated from the input main supply. The output power of fly-back type SMPS
circuits may vary from few watts to less than 100 watts. The overall circuit topology of this converter is
considerably simpler than other SMPS circuits. Input to the circuit is generally unregulated dc voltage
obtained by rectifying the utility ac voltage followed by a simple capacitor filter. The circuit can offer single
or multiple isolated output voltages and can operate over wide range of input voltage variation. In respect of
energy-efficiency, fly-back power supplies are inferior to many other SMPS circuits but its simple topology
and low cost makes it popular in low output power range.
The commonly used fly-back converter requires a single controllable switch like, MOSFET and the usual
switching frequency is in the range of 100 kHz. A two-switch topology exists that offers better energy
efficiency and less voltage stress across the switches but costs more and the circuit complexity also increases
slightly.

Electromagn

BASIC TOP

Fig. 21 show
derived from
generally of
Since the SM
spite of bein
A fast switc
the desired
between in
transformer
be noted t
simultaneou
normal tran
ampere turn
Since prima
more like
transformer
done like th
rectification
As can be s
diode and a

etic Interfere
POLOGY OF
ws the basic
m the utility
f low frequen
MPS circuit
ng unregulat
ching device,
output volt
put and ou
r are wound
that the pri
usly and in
nsformer, un
ns of primary
ary and seco
two magnet
r as inductor
hat for an in
n and filterin
seen from th
a capacitor. V
nce (EMI) and
FLYBACK C
c topology o
ac supply af
ncy and the
is operated a
ed, may be c
like a MOSF
tage. The tr
utput voltage
to have good
imary and s
this sense fl
nder load, p
y winding is
ondary wind
tically coup
r-transforme
nductor. Th
ng, is conside
he circuit (Fig
Voltage acros
Fig
d filter design
CONVERTER
f a fly-back
fter rectificat
overall rippl
at much high
considered to
FET, is used
ansformer is
e and curren
d coupling so
secondary w
ly-back trans
primary and
nearly balan
ings of the f
led inductor
er. Accordin
e output sec
erably simpl
g.21), the sec
ss this filter c
g.21 Ideal f
for SMPS
R
circuit. Inpu
tion and som
le voltage wa
her frequenc
o have a cons
with fast dyn
s used for v
nt requirem
o that they a
windings of
sformer wor
secondary w
nced by the o
fly-back tran
rs and it m
ngly the mag
ction of the
ler than in m
condary win
capacitor is th
fly-back conv

ut to the cir
me filtering. T
aveform repe
cy (in the ran
stant magnitu
namic contr
voltage isola
ments. Prima
are linked by
the fly-bac
rks different
windings co
opposing amp
nsformer don
may be mor
gnetic circuit
fly-back tra
most other sw
nding voltage
he SMPS out
verter schema
Centre fo
rcuit may be
The ripple in
eats at twice
nge of 100 kH
ude during a
ol over switc
tion as well
ary and seco
nearly same
k transform
ly from a no
nduct simul
pere-turns of
nt conduct
re appropria
t design of a
nsformer, w
witched mod
e is rectified
tput voltage.
atic
or Airborne Sy
e unregulated
n dc voltage
the ac main
Hz) the inpu
any high freq
ch duty ratio
l as for bett
ondary wind
e magnetic flu
mer dont ca
ormal transf
ltaneously su
f the second
simultaneou
ate to call t
a fly-back tra
which consist
de power sup
and filtered
ystems, DRDO
d dc voltage
waveform is
ns frequency.
ut voltage, in
quency cycle.
to maintain
er matching
dings of the
ux. It should
arry current
former. In a
uch that the
ary winding.
usly they are
the fly-back
ansformer is
ts of voltage
pply circuits.
using just a
O
31
e
s
.
n
.
n
g
e
d
t
a
e
.
e
k
s
e
.
a
Electromagn

LINE IMPE

LISN is an
converter in
situation is
An LISN rea
1. It al
2. It fe
3. It p
4. It p
rep
etic Interfere
DANCE STA
industrial e
ncluding load
shown in Fig
alizes four im
llows supply
eeds and con
prevents exter
presents a c
roducibility
nce (EMI) and
Fig. 22 Ou
ABILIZATION
element offe
d as an interf
g. 23.
mportant task
ying the equip
ncentrates dis
rnal noise to
onstant imp
from site to
d filter design
utput charac
N NETWOR
ered by stan
face to make
ks
pment with A
sturbance thr
modify mea
pedance of 5
site.
for SMPS
cteristics of an
K
ndards to pl
e it possible m
AC power (lo
rough the m
asurements
50 with re
n ideal fly-ba
lace between
measuring th
ow frequency
measurement
espect to fre
Centre fo
ack converter
n the supply
he conducted
y behaviour)
points.
equency whi
or Airborne Sy
y and power
d interference
) from the po
ich allows m
ystems, DRDO
r electronics
e. The stated
ower mains.
measurement
O
32
s
d
t
Electromagn

The adopted

etic Interfere
d LISN topol
nce (EMI) and
Fig. 2
logy is shown
Fig. 24 Sc
d filter design
23 Measure
n in Fig. 24.
hematic of L
for SMPS
ement setup f
ine Impedan

for conducted
nce Stabilizat
Centre fo
d EMI
ion Network
or Airborne Sy

ystems, DRDOO
33
Electromagn

It is evident
thus allowin

etic Interfere
Fig. 25 Imp
Fig. 26 Im
t from the Im
ng standardiz
nce (EMI) and
pedance offer
mpedance offe
mpedance cu
zed measure
d filter design
red by LISN f
ered by LISN
urves that a L
ment of EMI
for SMPS
for the full fr

in the high fr

LISN offers a
I component
requency spec
frequency ran
a constant im
t (10 kHz to
Centre fo
ctrum (10Hz
nge. (10 kHz t
mpedance of
30 MHz).
or Airborne Sy
to 100 MHz)
to 100 MHz)
50 at high
ystems, DRDO
)

)
frequencies,
O
34
,
Electromagn

MEASUREM

Fig. 27

The SPICE

REALIST

.OPTION

*******
* INPUT

Vinput
Vgate 7

*******

* LISN

Clisn1_
Rlisn1_

Llisn1

Clisn1_
Rlisn1_
Rlisn1_

*******

* LISN

Clisn2_
Rlisn2_

Llisn2

Clisn2_
etic Interfere
MENT OF E
Circuit to me
net-list for th
TIC FLYBAC
N METHOD=G
**********
T VOLTAGE
1 2 dc 30
7 8 pulse(
**********
1
_1 1 12 8u
_1 12 0 5
1 3 50uH
_2 3 11 0.
_2 11 0 1k
_3 11 0 50
**********
2
_1 2 10 8u
_1 10 0 5
2 8 50uH
_2 8 9 0.2
nce (EMI) and
MI
easure EMI g
he above sho
CK CONVERTE
GEAR LVLTIM
**********
0V
0 10 0 10n
**********
u
25u
k

**********
u
5u
d filter design
generated by
own schemat
ER
M=1
**********
n 10n 0.58
**********
**********
for SMPS
the fly-back
tic is as show
***********
8u 1u)
***********
***********
converter (w
wn below:
**********
**********
**********
Centre fo
ith parasitic
***********
***********
***********
or Airborne Sy
and realistic
******
******
******
ystems, DRDO
c elements)
O
35

36
Rlisn2_2 9 0 1k
Rlisn2_3 9 0 50

*********************************************************************

* primary side of flyback converter

R1 3 4 0.014

Cpar1 4 5 2.73nF

Lpar1 5 6 1.58uH

Xm1 6 7 8 mtp6n60/mc

*********************************************************************

* flyback transformer

LFPRIMARY 4 5 14u
LFSECONDARY 0 13 0.6u
KTX LFPRIMARY LFSECONDARY 0.99

*********************************************************************

* capacitor parasitics of flyback transformer

CtxPar1 4 13 0.29nF
CtxPar2 5 0 0.29nF

*********************************************************************

* secondary side of transformer

Cpar2 13 0 4.46nF

Xd1 13 14 40EPS08

Cfilter 14 0 50uF

Rload 14 0 3.2

*********************************************************************

* MOSFET subcircuit

.subckt mtp6n60/mc 10 20 30
*
* 10 = Drain 20 = Gate 30 = Source
*
*********************************************************************
*
*------------------------ EXTERNAL PARASITICS -----------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
*
RGATE 21 2 5

37
*
*--------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 2.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 1.31e-09
*
*--------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------
*
.MODEL RDRAIN R(
+TC1 = 0.008891
+TC2 = 3.056e-05)
*
.MODEL RSOURCE R(
+TC1 = -0.003198
+TC2 = 2.60004e-05)
*
.MODEL RDBODY R(
+TC1 = 0.003945
+TC2 = 9.54752e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 13
+GAMMA = 2.6
+PHI = 0.6
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.59e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+VMAX = 0
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 0

38
+KAPPA = 0.2)
*
*--------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 1.129e-09
+VJ = 1.943
+M = 1.476
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.532e-11
+RS = 0
+N = 1.062
+TT = 2.5e-07
+CJO = 9.725e-10
+VJ = 1.127
+M = 0.6627
+EG = 1.11
+XTI = 5
+KF = 0
+AF = 1
+FC = 0.5
+BV = 671
+IBV = 0.00025)
.ENDS

*********************************************************************

* diode subcircuit

.SUBCKT 40EPS08 A K
D1 A K 40EPS08
.MODEL 40EPS08 d (
+IS=1e-15 RS=0.00426912 N=0.926332 EG=0.6
+XTI=0.5 BV=800 IBV=0.0001 CJO=1e-11
+VJ=0.7 M=0.5 FC=0.5 TT=1e-09
+KF=0 AF=1 )
.ENDS

*********************************************************************

.tran 1ms 10ms
.plot tran V(10,0)
.FOUR 10kHz 100 V(10,0)
.probe

.end

The results obtained from the simulation of the above circuit are shown below:
Electromagn

etic Interfere
Fig.2
nce (EMI) and
28 Output v
d filter design
voltage of the
Fig. 29
for SMPS

e fly-back con

Output volta

nverter with p
age ripple
Centre fo
parasitic elem
or Airborne Sy

ments

ystems, DRDOO
39
Electromagn

Fi
d filter design
Fig. 30 FF
ig. 31 frequ
for SMPS
T of the outp

uency vs. live

put waveform
voltage (dB
Centre fo
m
V)
or Airborne Sy

ystems, DRDOO
40
Electromagn

Fig.

d filter design
32 frequen
for SMPS
ncy vs. neutra

al voltage (dB
Centre fo
BV)
or Airborne Sy

ystems, DRDOO
41
Electromagn

F
Fig

d filter design
ig. 33 Com
g. 34 Differ
for SMPS
mmon mode n

rential mode
noise (in dB
noise (in dB
Centre fo
V)
V)
or Airborne Sy

ystems, DRDOO
42

43

4. EMI filter design for DC-DC
converters


44
INTRODUCTION

The main purpose of the EMI filter is to limit the interference that is conducted or radiated from the power
circuit. Excessive conducted or radiated interference can cause erratic behaviour in other systems that are in
close proximity of, or that share an input source with, the power circuit. If this interference affects the power
circuit, it can cause erratic operation, excessive ripple, or degraded regulation, which can lead to system level
problems. Input EMI filters may also be used to limit inrush current, reduce conducted susceptibility, and
suppress spikes. The specifications for the allowable interference are generally driven by the power circuit
specification. The most common specifications include MIL-STD-461 for military applications and FCC for
commercial applications. Many other EMI specifications also exist.
The basic requirements for an EMI filter are
The filter must provide the power converter with lower output impedance than the negative input
resistance of the power circuit.
The input filter attenuation must be sufficient to limit the resulting interference to a level that is below
the imposed specification.

This section deals with the design and analysis of EMI filters that will reduce conducted interference and
conducted susceptibility.

TOPOLOGY OF AN EMI FILTER

The noise voltage, measured from the 50 LISN contains both common-mode (CM) noise and differential-
mode (DM) noise. Each mode of noise is dealt with by the respective section of an EM1 filter. Fig. 33 shows a
commonly used filter network topology, and Fig. 34 and 35 shows, respectively, the equivalent circuit of the
CM section and the DM section of the filter. Referring to Fig. 34 and 35, it is noticed that some elements of
the filter affect DM (or CM) noise only and some affect both DM and CM noise. The capacitors C
X1
and C
X2

affect DM noise only. An ideal common-mode choke L
C
affects CM noise only, but the leakage inductance
L
leakage
between the two windings of L
C
affects DM noise. C
Y
suppresses both CM noise and DM noise, but its
effect on DM noise suppression is practically very little because of the relatively large value of C
X2
. Similarly,
L
D
suppresses both DM noise and CM noise, but its effect on CM noise is practically very little because of the
relatively large value of L
c
. The two modes of noise collectively contribute to the total EMI noise.

Electromagn

BASIS OF D

1. Comm
The comm
assumption

etic Interfere
DETERMINI
mon Mode
mon mode e
ns and theore
nce (EMI) and
Fig. 3
Fig. 37
NG FILTER C
quivalent cir
ems as show
d filter design
Fig. 35 T
36 Commo
7 Differenti
COMPONEN
rcuit of Fig.
wn in Fig. 36
for SMPS
Topology of a

n Mode nois

ial Mode noi

NT VALUES
. 34 is reduc
39.
an EMI filter
e equivalent
ise equivalent
S
ced to an L
Centre fo
circuit
t circuit
C series circ
or Airborne Sy

cuit through
ystems, DRDO
h a series of
O
45
f
Electromagn

etic Interfere
Fig. 39
nce (EMI) and
Fig. 3
Equivalent
Fig.40 Equ
Fig. 41
d filter design
38 Commo
t circuit of Fig
uivalent circu
1 Filter atte
for SMPS
on mode noise

ig. 38 if Z
P
>>

uit of Fig. 39

enuation for c
If
w
App
CM
=
I
I
e equivalent
>
1
w(2C)
and w
after recipro
common-mo
Z
P
>>
1
w (2C
(L
C
+ L
D
/2)
lying Recipro
M Attenuatio
Is,cm25
o,cm25

vs
vo
f
Centre fo
circuit
w(Lc + Ld/2)
ocity theorem
de noise
)
and
>> 25
ocity theorem
on =
v
lisn
(wth
v
lisn
(w
s,cm
o,cm

f
R,CM
=
1
2nLcm

1
2nLc . 2C

or Airborne Sy
) >> 25
m
m
hout ]Itc)
th ]Itc)

m Ccm
=
2n_(
If L
C
>> L
D
/
ystems, DRDO
1
Lc+
Ld
2
) 2C

/2
O
46
Electromagn

2. Differe
The differe
assumption

etic Interfere
ential Mode
ential mode
ns and theore
Fig. 43 Eq
Fig
nce (EMI) and
equivalent c
ems as show
Fig
quivalent circ
g. 44 Equiv
F
d filter design
circuit of Fig
wn in Fig. 40
g. 42 Differe
cuit of Fig. 42
valent circuit
Fig. 45 Filte
for SMPS
g. 35 is redu
43.
ential Mode e

2 if ZC
X1
>> 1

of Fig. 43 by

er attenuatio
Re
If C
uced to an L
equivalent ci
100; ZC
X2
>
applying rec
n for DM no
If
1
w Cx1
>>
wL
DM
>> 10
ciprocity the
C
X1
= C
X2
= C
D
f
=
Centre fo
LC series cir
rcuit
>> Z
P
; and wL
ciprocity theo
ise
100,
1
w Cx2

00
eorem
DM

f
R,DM
=
1
2nLdm
=
2n(2Ld+LI
or Airborne Sy
rcuit through
L
DM
>> 100
orem
>> Z
P

1
m Cdm

1
Icukugc) Cdm

ystems, DRDO
h a series of

O
47
f
Electromagn

SOFTWAR

Fig. 44 sho
following e
V
L
= V
CM
+
V
N
= V
CM
-
Therefore,
V
DM
= (V
L

Fig. 46

etic Interfere
E BASED EM
ows the circ
equations can
+ V
DM

- V
DM

V
CM
= (V
L
+
V
N
) / 2
Circuit diag
nce (EMI) and
MI NOISE SE
uit diagram
n be derived.
+ V
N
) / 2, and

gram for sepa
signals

d filter design
EPARATION
for separati
.
d
aration of con
for SMPS
N METHOD
ion of condu

nductive EMI

uctive EMI s
I

Fig.
sep
C
Centre fo
signals. As s
47 Flow ch
aration of co
Measu
Measur
Conversion
Calculation o
above def
Conversion
or Airborne Sy
shown in th

hart of softwa
onductive EM
Start
urement of V
rement of V
N
n of V
L
& V
N

of V
CM
& V
DM
fined equatio
n of V
CM
& V
dBV
End
ystems, DRDO
e figure, the
are based
MI signals
V
L

N

in V
M
by the
ons
V
DM
in
O
48
e

49
DESIGN PROCEDURE FOR EMI FILTER

Step 1: Accurately measure the base-line of common mode EMI noise spectrum V
CM
and differential mode
EMI noise spectrum V
DM
.
Step 2: Determine the required common mode noise attenuation & differential mode noise attenuation at
various sampled frequencies.
(V
req-cm
)
dB
= (V
CM
)
dB
(V
lim
)
dB
+ 6dB
(V
req-dm
)
dB
= (V
DM
)
dB
(V
lim
)
dB
+ 6dB
To avoid design error, +6dB is added because both the measured DM noise and CM noise are 3dB
above the actual values, and because the measured CM & DM noise voltages may be in phase, which
will cause a total error of 6dB in estimating the required attenuation.
Step 3: Determine filter corner frequencies
The filter corner frequencies can be determined by searching the minimum values of f
c-cm
and f
c-dm

from the required attenuation from all sampled frequencies.

(V
reqd-CM)
)
dB
= 40log
10
]
]c-cm
f
c-cm
= common mode corner frequency
(V
reqd-DM)
)
dB
= 40log
10
]
]c-dm
f
c-dm
= differential mode corner frequency
Step 4: Determine filter component values
a. CM components L
C
and C
Y
:
Since there is a safety leakage current requirement, C
Y
is normally limited to 3300pF. L
C
and 2C
Y

should have a resonant frequency of f
C-CM
obtained in Step 3.
Therefore
L
C
= (
1
2n ]c-cm
)
2

1
2C

b. DM components L
D
, C
X1
and C
X2
:
Based on the assumption made for Fig. 43, C
X1
and C
X2
are selected to be the same value C
DM
and
are related to L
DM
through corner frequency f
c-dm
requirement as shown below

C
X1
= C
X2
= C
DM
= (
1
2n ]c-dm
)
2

1
Ld

C
X1
, C
X2
, L
D
are unknowns. There exists a degree of freedom for trade-off. Since the leakage
inductance due to the coupling imperfection of a practical CM choke also has a filtering effect on
the DM noise, thus to reduce the EMI filter design cost and size, the effect of the DM inductance
L
D
can be totally replaced by the leakage inductance L
leakage
of the CM choke. Practically, L
leakage
is
generally in the range of 0.5-2% of the L
c
value.


50

Fig. 48 Design steps of the presented filter design

Start
Separated CM and DM components
Limit line
Calculate the required CM and DM attenuation
Compute the CM and DM corner frequencies
Calculate the CM inductor value given that the Y-
capacitor is fixed at 3300pF
Calculate the leakage inductance of the CM inductor
Calculate the value of C
X1
= C
X2
=C
DM
.
End
Electromagn

SOFTWAR

A MATLA
determinati
Some of the
1. Req
2. Allo
3. Allo

For an expe
converter [S
EMI filter is
voltage to 4
has been ext
The results

etic Interfere
E IMPLEME
AB GUI was
ion of EMI fi
e features of t
quires live vo
ows pre-selec
ows design o
a. FCC Cl
b. FCC Cl
c. MIL ST
Fi
erimental ver
See Page 4
s chosen to c
45dBV for a
tended over
obtained fro
nce (EMI) and
ENTATION O
s developed
ilter compon
the GUI are
oltage and the
cting the Y-C
of EMI filter a
lass A
lass B, and
TD
ig. 49 Devel
rification of t
41] is used. T
comply with
a frequency r
the full cond
om the GUI a
d filter design
OF EMI FILT
using the
nent values.
e neutral line
Capacitor val
according to
loped MATL
the develope
The live volta
FCC Class A
range of 450
ducted EMI s
are shown be
for SMPS
TER DESIGN
above descr
e voltage as i
lue and the l
o 3 standards
LAB GUI for

ed GUI, the d
age and the
A standard. F
kHz to 30M
spectrum i.e.
elow.

ribed metho
inputs to com
eakage induc
conducted EM
data obtained
neutral volta
FCC Class A
MHz, but for
. 10 kHz to 3
Centre fo
ods and algo
mpute the filt
ctance of the
MI filter desig
d from the si
age are loade
A standard lim
this simulati
0MHz.
or Airborne Sy
orithms to
ter compone
e CM inducto
ign
imulation of
ed into the G
mits the cond
tion, the freq
ystems, DRDO
help in the
ent values.
or.
f the fly-back
GUI and the
ducted noise
quency range
O
51
e
k
e
e
e
Electromagn

The values f
Common M
C

Differentia
C

etic Interfere
for the EMI f
Mode filter
C
Y
= 3300 nF
al Mode filter
C
X
= 10.223 F
nce (EMI) and
Fig. 50 EM
filter as sugg
F
r
F
d filter design
MI filter resu
gested by the
for SMPS
lts obtained f

GUI are
L
C
= 0.2949
L
D
=2.949 m
for the fly-ba
H
mH
Centre fo
ack converter
Corne
Corne
or Airborne Sy

er freq. = 0.1
er freq. = 0.9
ystems, DRDO
1408 kHz
1662 kHz
O
52
Electromagn

SPICE VERI

With the da
and it was in

It can be see
etic Interfere
IFICATION O
ata obtained
ntegrated wi
en that the fi
nce (EMI) and
OF THE DES
d from the G
ith the fly-ba
Fig. 51
Fig. 52
ilter effective
d filter design
SIGNED EM
GUI, an EMI
ck converter
EMI filter u
Attenuation
ly attenuates
for SMPS
I FILTER
I filter was d
r earlier desig
using the data

n curve for th

s signals with
designed. Its
gned, and the
a obtained by
he EMI filter
h frequency o
Centre fo
attenuation
e EMI charac
y the GUI
designed.
over 10kHz i
or Airborne Sy
properties w
cteristics wer

i.e. EMI nois
ystems, DRDO
were derived
re studied.
e.
O
53
d
Electromagn

To study th
and neutral

The SPICE

LISN FO

.OPTION

*******
* INPUT

Vinput
Vgate 7

*******

* LISN

Clisn1_
Rlisn1_

Llisn1

Clisn1_
Rlisn1_
Rlisn1_

*******

* LISN

Clisn2_
Rlisn2_

Llisn2

Clisn2_
Rlisn2_
etic Interfere
e effectivene
line voltages
net list for th
OLLOWED BY
N METHOD=G
**********
T VOLTAGE
1 2 dc 30
7 18 pulse
**********
1
_1 1 12 8u
_1 12 0 5
1 3 50uH
_2 3 11 0.
_2 11 0 1k
_3 11 0 50
**********
2
_1 2 10 8u
_1 10 0 5
2 8 50uH
_2 8 9 0.2
_2 9 0 1k
nce (EMI) and
ess of the EM
s are again co
Fig. 53 LI
he above sho
Y EMI FILTE
GEAR LVLTIM
**********
0V
e(0 10 0 10
**********
u
25u
k

**********
u
5u
d filter design
MI filter desig
ollected and
ISN followed
wn schemati
ER AND FLY
M=1
**********
0n 10n 0.5
**********
**********
for SMPS
gned, it is inte
studied.
d by EMI filte

ic is as follow
YBACK CONVE
***********
58u 1u)
***********
***********
egrated with
er and fly-bac
ws:
ERTER
**********
**********
**********
Centre fo
the fly-back
ck converter
***********
***********
***********
or Airborne Sy
k converter an
******
******
******
ystems, DRDO
nd the live
O
54

55
Rlisn2_3 9 0 50

*********************************************************************

* EMI filter

CX1 3 8 10.223u

LC1 3 15 0.2949H
LC2 8 16 0.2949H
KEMI LC1 LC2 0.99

LD1 15 17 2.949mH
LD2 16 18 2.949mH

CX2 17 18 10.223u

CY1 17 0 3300n
CY2 18 0 3300n

*********************************************************************

* primary side of flyback converter

R1 17 4 0.014

Cpar1 4 5 2.73nF

Lpar1 5 6 1.58uH

Xm1 6 7 18 mtp6n60/mc

*********************************************************************

* flyback transformer

LFPRIMARY 4 5 14u
LFSECONDARY 0 13 0.08u
KTX LFPRIMARY LFSECONDARY 0.99

*********************************************************************

* capacitor parasitics of flyback transformer

CtxPar1 4 13 0.29nF
CtxPar2 5 0 0.29nF

*********************************************************************

* secondary side of transformer

Cpar2 13 0 4.46nF

Xd1 13 14 40EPS08

Cfilter 14 0 50uF

Rload 14 0 3.2

*********************************************************************

* MOSFET subcircuit

.subckt mtp6n60/mc 10 20 30
*
* 10 = Drain 20 = Gate 30 = Source

56
*
*********************************************************************
*
*------------------------ EXTERNAL PARASITICS -----------------------
* PACKAGE INDUCTANCE
*
LDRAIN 10 11 4.5e-09
LGATE 20 21 7.5e-09
LSOURCE 30 31 7.5e-09
*
* RESISTANCES
*
*
RGATE 21 2 5
*
*--------------------------------------------------------------------
*
*--------------- CAPACITANCES AND BODY DIODE ------------------------
*
DBODY 8 11 DBODY
DGD 3 11 DGD
CGDMAX 2 3 2.7e-09
RGDMAX 2 3 1e+08
CGS 2 6 1.31e-09
*
*--------------------------------------------------------------------
*
*----------------------- CORE MOSFET --------------------------------
*
M1 5 2 6 6 MAIN
*
*--------------------------------------------------------------------
*
.MODEL RDRAIN R(
+TC1 = 0.008891
+TC2 = 3.056e-05)
*
.MODEL RSOURCE R(
+TC1 = -0.003198
+TC2 = 2.60004e-05)
*
.MODEL RDBODY R(
+TC1 = 0.003945
+TC2 = 9.54752e-06)
*
*
.MODEL MAIN NMOS (
+LEVEL = 3
+VTO = 3.8
+KP = 13
+GAMMA = 2.6
+PHI = 0.6
+RD = 0
+RS = 0
+CBD = 0
+CBS = 0
+IS = 1e-14
+PB = 0.8
+CGSO = 0
+CGDO = 0
+CGBO = 0
+RSH = 0
+CJ = 0
+MJ = 0.5

57
+CJSW = 0
+MJSW = 0.33
+JS = 1e-14
+TOX = 1e-07
+NSUB = 1e+15
+NSS = 0
+NFS = 6.59e+11
+TPG = 1
+XJ = 0
+LD = 0
+UO = 600
+VMAX = 0
+KF = 0
+AF = 1
+FC = 0.5
+DELTA = 0
+THETA = 0
+ETA = 0
+KAPPA = 0.2)
*
*--------------------------------------------------------------------
*
.MODEL DGD D (
+IS = 1e-15
+RS = 0
+N = 1000
+TT = 0
+CJO = 1.129e-09
+VJ = 1.943
+M = 1.476
+EG = 1.11
+XTI = 3
+KF = 0
+AF = 1
+FC = 0.5
+BV = 10000
+IBV = 0.001)
*
*--------------------------------------------------------------------
*
.MODEL DBODY D (
+IS = 1.532e-11
+RS = 0
+N = 1.062
+TT = 2.5e-07
+CJO = 9.725e-10
+VJ = 1.127
+M = 0.6627
+EG = 1.11
+XTI = 5
+KF = 0
+AF = 1
+FC = 0.5
+BV = 671
+IBV = 0.00025)
.ENDS

*********************************************************************

* diode subcircuit

.SUBCKT 40EPS08 A K
D1 A K 40EPS08
.MODEL 40EPS08 d (
+IS=1e-15 RS=0.00426912 N=0.926332 EG=0.6
+XTI=0.5 BV=800 IBV=0.0001 CJO=1e-11
+VJ=0.7 M=0.5 FC=0.5 TT=1e-09
+KF=0 AF=1 )
Electromagn

.ENDS

*******

.TRAN 1
.probe

.end

The results

etic Interfere
**********
10E-004 0.
obtained fro
Fig. 54
nce (EMI) and
**********
01 7E-3
om the simul
4 Output v
d filter design
**********
ation of the a
voltage of the f
for SMPS
***********
above circuit
fly-back con

**********
t are shown b
verter with L
Centre fo
***********
below:
LISN and EM
or Airborne Sy
******

MI filter
ystems, DRDOO
58
Electromagn

Fig.
Fig. 56
d filter design
55 Output
6 FFT of th
for SMPS
t voltage ripp

he output volt

ple with EMI f
tage with EM
Centre fo
filter
MI filter
or Airborne Sy

ystems, DRDOO
59
Electromagn

Fig. 57 f
Fig. 58 fre
d filter design
frequency vs.
equency vs. n
for SMPS
live voltage

neutral voltag

with EMI filt
ge with EMI f
Centre fo
ter (dBV)
filter (dBV)
or Airborne Sy

ystems, DRDOO
60
Electromagn

Fig. 59
Fig. 60
d filter design
Common m
Differential
for SMPS
mode noise w

mode noise w

ith EMI filter
with EMI filte
Centre fo
r (dBV)
er (dBV)
or Airborne Sy

ystems, DRDOO
61
Electromagn

COMPARIS

On compar
improveme
integration

Fig. 61 (A)
Fig. 62 (A

etic Interfere
SON OF RES
ring the com
nt can be see
of the EMI f
Withou
common m
A) different
nce (EMI) and
SULTS OBTA
mon and dif
en. The comm
filter thus, va
ut EMI filter
mode noise w
tial mode noi
filter

d filter design
AINED WITH
fferential mo
mon and dif
alidating the f
r
without EMI f
se without EM
for SMPS
H AND WIT
ode noise lev
fferential mo
filter as effec
filter F
MI Fig
THOUT FILTE
vels with and
ode noises sh
ctive.
Fig. 61(B) co
g. 62 (B) diff
Centre fo
ER
d without the
ow a signific
With EMI
ommon mode

fferential mo

or Airborne Sy
e EMI filter,
cant attenuat
I filter
e noise with E
de noise with
ystems, DRDO
a significant
tion after the
EMI filter
h EMI filter
O
62
t
e

63
5. CONCLUSION

The switching characteristics of a Power MOSFET and the reverse recovery characteristics of a diode are the
main contributors to EMI generated in a power converter. Both the characteristics were successfully
modelled, tested and integrated in the converter and the EMI data was generated. An EMI filter was
developed using the data generated by the converter. This filter was then integrated into the converter
schematic and the EMI characteristics were simulated. A significant improvement in the EMI attenuation
was observed.
In chapter 1, a basic overview of EMI/EMC was provided. The foundation stone for further EMI studies was
laid down in the chapter. The reasons for occurrence of EMI and the modes of occurrence were discussed.
In chapter 2, high frequency models of components used in power converters were modelled. These included
basic components such as the capacitor and inductor and switching components like the MOSFET. SPICE
models for a diode and a MOSFET were developed to be used in the EMI simulation of a power converter.
In chapter 3, the basic concepts of a fly-back converter were discussed. Also the high frequency models of
MOSFET and diodes were integrated into the converter and the circuit was simulated to determine the EMI
characteristics of the converter.
In chapter 4, the data generated from the simulation in chapter 3 was used to design an EMI filter. A
MATLAB GUI was developed for the purpose. The attenuation properties of the designed filter were studied
and it was integrated in the fly-back converter. Thus a complete fly-back converter was simulated and the
EMI data was again generated. The data so obtained (after the filter was integrated) was compared to the data
previously obtained for the same converter and a significant improvement in the EMI characteristics was
observed.
On the whole, a model for EMI simulation in a fly-back converter was developed bottom up. A complete
SPICE program for the same has also been provided that can be used in further studies.

64
6. REFERENCES
[1] Dong-Young Lee, J.H. Lee, S.H. Min, B.H. Cho, B.H. Lee. Exact Simulation of Conducted EMI in
Switched Mode Power Supplies, SAE 98.
[2] Fu-Yuan Shih, Dan Y. Chen, Yan-Pei Wu, Yei-Ton Chen. A Procedure for Designing EMI Filters for
AC Line Applications, IEEE transactions on Power Electronics, Vol. 11, No. 1, January 96.
[3] Po-Shen Chen, Yen-Shin Lai. New EMI Filter Design Method for Single Phase Power Converter using
Software-based Noise Separation Method, IEEE 07.
[4] Himanshu K. Patel. Critical Considerations for EMI Filter Design in Switch Mode Power Supply.
[5] Jukka-Pekka Sjroos. Conducted EMI filter design for SMPS, IEEE 06.
[6] Hsin-Lung Su, Ken-Huang Lin. Computer-Aided Design of Power Line Filters with a Low Cost
Common- and Differential-Mode Noise Diagnostic Circuit, IEEE 01.
[7] A. Farhadi, A. Jalilian. Modelling and Simulation of Electromagnetic Conduced Emission Due to
Power Electronics Converters, IEEE 06.
[8] Thomas Farkas. A Scientific Approach to EMI Reduction in Switching Power Supplies, MS Thesis,
Massachusetts Institute of Technology, September 91.
[9] MIL-STD-462. Military Standard: Measurement of Electromagnetic Interference Characteristics.
[10] Andreas Karvonen. MOSFET Modelling Aimed at Minimizing EMI in Switched DC/DC Converters
Using Active Gate Control, Engineering Thesis, Chalmers University of Technology, 2009.
[11] Liyu Yang. Modelling and Characterization of a PFC Converter in the Medium and High Frequency
Ranges for Predicting the Conducted EMI, MS Thesis, Virginia Polytechnic Institute and State
University, September 03.
[12] C.H. Xu, D. Schroder. Modelling and Simulation of Power MOSFETS and Power Diodes, IEEE
PESC 88.
[13] Gabriel Chindris, Ovidiu Pop, Grama Elin, Florin Hurgui. New PSpice model for Power MOSFET
devices, IEEE International Spring Seminar on Electronics Technology, May 01.
[14] Hong Man Leung. SPICE Simulation and Modelling of DC-DC Flyback Converter, MS Thesis,
Massachusetts Institute of Technology, August 95.
[15] Peter O. Lauritzen. A Simple Diode Model with Reverse Recovery, IEEE transaction on Power
Electronics, Vol. 6, No.2, April 91.
[16] C. Chang, H. Teng, J. Chen, H. Chiu. Computerized conducted EMI filter design system using
labVIEW and its applications.
[17] Mohit Kumar, Vivek Agarwal. Power Line Filter Design for Conducted Electromagnetic Interference
Using Time-Domain Measurements, IEEE transaction on Electromagnetic Compatibility, Vol. 48, No.
1, February 06.
[18] Mohannad Lutfi Nayfah, Ali Keyvan Ekbatani, Abdullah Albisher. Power Line Filter Design for
Conducted Electromagnetic Interference Using Time-Domain Measurements,
[19] Supratim Basu. EMI-EMC Notes.
[20] Fly-Back Type Switched Mode Power Supply, Module-3, Lecture-22, Power Electronics, IIT
Kharagpur, NPTEL.
[21] MicroSim Application Notes, MicroSim.
[22] Reference Manual, OrCAD PSpice A/D, OrCAD Inc.

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