APPENDIX A: Parameter List

A.1 Model Control Parameters

Symbols used in equation None None None None mobMod capMod nqsModa acnqsMod noiMod Symbols used in SPICE level version binUnit paramChk mobMod capMod nqsMod acnqsMod noiMod Description The model selector Model version selector Bining unit selector Parameter value check Mobility model selector Flag for capacitance models Flag for NQS model Flag for AC NQS model Both instance/model parameter Flag for noise models Default 8 3.3 1 False 1 3 0 0 Unit none none none none none none none none Note

none

a. nqsMod is now an element (instance) parameter, no longer a model parameter.

A.2 DC Parameters

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DC Parameters

Symbols used in equation Vth0

Symbols used in SPICE vth0

Description Threshold voltage @Vbs=0 for Large L.

Default 0.7 (NMOS) -0.7 (PMOS)

Unit V

Note nI-1

VFB K1 K2 K3 K3b W0 Nlx Vbm Dvt0 Dvt1 Dvt2 Dvt0w

vfb k1 k2 k3 k3b w0 nlx vbm dvt0 dvt1 dvt2 dvt0w

Flat-band voltage First order body effect coefficient Second order body effect coefficient Narrow width coefficient Body effect coefficient of k3 Narrow width parameter Lateral non-uniform doping parameter Maximum applied body bias in Vth calculation first coefficient of short-channel effect on Vth Second coefficient of shortchannel effect on Vth Body-bias coefficient of shortchannel effect on Vth First coefficient of narrow width effect on Vth for small channel length Second coefficient of narrow width effect on Vth for small channel length

Calculated 0.5 0.0 80.0 0.0 2.5e-6 1.74e-7 -3.0 2.2 0.53 -0.032 0

V V1/2 none none 1/V m m V none none 1/V 1/m

nI-1 nI-2 nI-2

Dvt1w

dvtw1

5.3e6

1/m

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DC Parameters

Symbols used in equation Dvt2w

Symbols used in SPICE dvt2w

Description Body-bias coefficient of narrow width effect for small channel length Mobility at Temp = Tnom NMOSFET PMOSFET First-order mobility degradation coefficient Second-order mobility degradation coefficient Body-effect of mobility degradation coefficient

Default -0.032

Unit 1/V

Note

u0

670.0 250.0 2.25E-9 5.87E-19 mobMod =1, 2: -4.65e-11 mobMod =3: -0.046 8.0E4 1.0 0.0 0.0 0.0 -0.047 0.0 1.0

cm2/Vs m/V (m/V)2 m/V2

Ua Ub Uc

ua ub uc

1/V m/sec none 1/V m m 1/V 1/V none

sat A0 Ags B0 B1 Keta A1 A2

vsat a0 ags b0 b1 keta a1 a2

Saturation velocity at Temp = Tnom Bulk charge effect coefficient for channel length gate bias coefficient of Abulk Bulk charge effect coefficient for channel width Bulk charge effect width offset Body-bias coefficient of bulk charge effect First non-saturation effect parameter Second non-saturation factor

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DC Parameters

Symbols used in equation Rdsw Prwb Prwg Wr Wint Lint dWg dWb Voff Nfactor Eta0 Etab Dsub Cit Cdsc

Symbols used in SPICE rdsw prwb prwg wr wint lint dwg dwb voff nfactor eta0 etab dsub cit cdsc

Description Parasitic resistance per unit width Body effect coefficient of Rdsw Gate bias effect coefficient of Rdsw Width Offset from Weff for Rds calculation Width offset fitting parameter from I-V without bias Length offset fitting parameter from I-V without bias Coefficient of Weffs gate dependence Coefficient of Weffs substrate body bias dependence Offset voltage in the subthreshold region at large W and L Subthreshold swing factor DIBL coefficient in subthreshold region Body-bias coefficient for the subthreshold DIBL effect DIBL coefficient exponent in subthreshold region Interface trap capacitance Drain/Source to channel coupling capacitance

Default 0.0 0 0 1.0 0.0 0.0 0.0 0.0 -0.08 1.0 0.08 -0.07 drout 0.0 2.4E-4

Unit -mWr V-1/2 1/V none m m m/V m/V1/2 V none none 1/V none F/m2 F/m2

Note

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DC Parameters

Symbols used in equation Cdscb Cdscd Pclm Pdiblc1 Pdiblc2 Pdiblcb Drout

Symbols used in SPICE cdscb cdscd pclm pdiblc1 pdiblc2 pdiblcb drout

Description Body-bias sensitivity of Cdsc Drain-bias sensitivity of Cdsc Channel length modulation parameter First output resistance DIBL effect correction parameter Second output resistance DIBL effect correction parameter Body effect coefficient of DIBL correction parameters L dependence coefficient of the DIBL correction parameter in Rout First substrate current bodyeffect parameter Second substrate current bodyeffect parameter Gate dependence of Early voltage Effective Vds parameter poly gate doping concentration The first parameter of impact ionization current Isub parameter for length scaling The second parameter of impact ionization current

Default 0.0 0.0 1.3 0.39 0.0086 0 0.56

Unit F/Vm2 F/Vm2 none none none 1/V none

Note

Pscbe1 Pscbe2 Pvag Ngate 0 1 0

pscbe1 pscbe2 pvag delta ngate alpha0 alpha1 beta0

4.24E8 1.0E-5 0.0 0.01 0 0 0.0 30

V/m m/V none V cm-3 m/V 1/V V nI-3

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C-V Model Parameters

Symbols used in equation Rsh Js0sw Js0 ijth

Symbols used in SPICE rsh jssw js ijth

Description Source drain sheet resistance in ohm per square Side wall saturation current density Source drain junction saturation current per unit area Diode limiting current

Default 0.0 0.0 1.0E-4 0.1

Unit / square A/m A/m2 A

Note

nI-3

A.3 C-V Model Parameters

Symbols used in equation Xpart CGS0 Symbols used in SPICE xpart cgso

Description Charge partitioning flag Non LDD region source-gate overlap capacitance per channel length Non LDD region drain-gate overlap capacitance per channel length Gate bulk overlap capacitance per unit channel length Bottom junction capacitance per unit area at zero bias

Default 0.0 calculated

Unit none F/m

Note nC-1

CGD0

cgdo

calculated

F/m

nC-2

CGB0 Cj

cgbo cj

0.0 5.0e-4

F/m F/m2

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C-V Model Parameters

Symbols used in equation Mj Mjsw

Symbols used in SPICE mj mjsw

Description Bottom junction capacitance grating coefficient Source/Drain side wall junction capacitance grading coefficient Source/Drain side wall junction capacitance per unit area Source/drain gate side wall junction capacitance grading coefficient Source/drain gate side wall junction capacitance grading coefficient Source/drain side wall junction built-in potential Bottom built-in potential Source/Drain gate side wall junction built-in potential Light doped source-gate region overlap capacitance Light doped drain-gate region overlap capacitance Coefficient for lightly doped region overlap capacitance Fringing field capacitance fringing field capacitance Constant term for the short channel model Exponential term for the short channel model

Default 0.5 0.33

Unit

Note

none

Cjsw Cjswg

cjsw cjswg

5.E-10 Cjsw

F/m F/m

Mjswg

mjswg

Mjsw

none

Pbsw Pb Pbswg CGS1 CGD1 CKAPPA

pbsw pb pbswg cgs1 cgd1 ckappa

1.0 1.0 Pbsw 0.0 0.0 0.6

V V V F/m F/m V

Cf CLC CLE

cf clc cle

calculated 0.1E-6 0.6

F/m m none

nC-3

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NQS Parameters

Symbols used in equation DLC DWC Vfbcv noff voffcv acde

Symbols used in SPICE dlc dwc vfbcv noff voffcv acde

Description Length offset fitting parameter from C-V Width offset fitting parameter from C-V Flat-band voltage parameter (for capMod=0 only) CV parameter in Vgsteff,CV for weak to strong inversion CV parameter in Vgsteff,CV for week to strong inversion Exponential coefficient for charge thickness in capMod=3 for accumulation and depletion regions Coefficient for the gate-bias dependent surface potential

Default lint wint -1 1.0 0.0 1.0

Unit m m V none V m/V

Note

nC-4 nC-4 nC-4

moin

moin

15.0

none

nC-4

A.4 NQS Parameters

Symbols used in equation Elm Symbols used in SPICE elm

Description Elmore constant of the channel

Default 5

Unit none

Note

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dW and dL Parameters

A.5 dW and dL Parameters

Symbols used in equation Wl Wln Ww Wwn Wwl Ll Lln Lw Lwn Lwl Llc

Symbols used in SPICE wl wln ww wwn wwl ll lln lw lwn lwl Llc

Description Coefficient of length dependence for width offset Power of length dependence of width offset Coefficient of width dependence for width offset Power of width dependence of width offset Coefficient of length and width cross term for width offset Coefficient of length dependence for length offset Power of length dependence for length offset Coefficient of width dependence for length offset Power of width dependence for length offset Coefficient of length and width cross term for length offset Coefficient of length dependence for CV channel length offset

Default 0.0 1.0 0.0 1.0 0.0 0.0 1.0 0.0 1.0 0.0 Ll

Unit mWln none mWwn none mWwn+Wln mLln none mLwn none mLwn+Lln mLln

Note

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Temperature Parameters

Symbols used in equation Lwc

Symbols used in SPICE Lwc

Description Coefficient of width dependence for CV channel length offset Coefficient of length and widthdependence for CV channel length offset Coefficient of length dependence for CV channel width offset Coefficient of widthdependence for CV channel width offset Coefficient of length and widthdependence for CV channel width offset

Default Lw

Unit mLwn

Note

Lwlc

Lwlc

Lwl

mLwn+Lln

Wlc

Wlc

Wl

mWln

Wwc Wwlc

Wwc Wwlc

Ww Wwl

mWwn mWln+Wwn

A.6 Temperature Parameters

Symbols used in equation Tnom te

Symbols used in SPICE tnom ute

Description Temperature at which parameters are extracted Mobility temperature exponent

Default 27 -1.5

Unit
oC

Note

none

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Temperature Parameters

Symbols used in equation Kt1 Kt1l

Symbols used in SPICE kt1 kt1l

Description Temperature coefficient for threshold voltage Channel length dependence of the temperature coefficient for threshold voltage Body-bias coefficient of Vth temperature effect Temperature coefficient for Ua Temperature coefficient for Ub Temperature coefficient for Uc

Default -0.11 0.0

Unit V Vm

Note

Kt2 Ua1 Ub1 Uc1

kt2 ua1 ub1 uc1

0.022 4.31E-9 -7.61E18 mobMod=1, 2: -5.6E-11 mobMod=3: -0.056

none m/V (m/V)2 m/V2

1/V

At Prt At nj XTI

at prt at nj xti

Temperature coefficient for saturation velocity Temperature coefficient for Rdsw Temperature coefficient for saturation velocity Emission coefficient of junction Junction current temperature exponent coefficient

3.3E4 0.0 3.3E4 1.0 3.0

m/sec -m m/sec none none

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Flicker Noise Model Parameters

Symbols used in equation tpb tpbsw tpbswg tcj tcjsw tcjswg

Symbols used in SPICE tpb tpbsw tpbswg tcj tcjsw tcjswg

Description Temperature coefficient of Pb Temperature coefficient of Pbsw Temperature coefficient of Pbswg Temperature coefficient of Cj Temperature coefficient of Cjsw Temperature coefficient of Cjswg

Default 0.0 0.0 0.0 0.0 0.0 0.0

Unit V/K V/K V/K 1/K 1/K 1/K

Note

A.7 Flicker Noise Model Parameters

Symbols used in equation Noia Noib Noic Symbols used in SPICE noia noib noic

Description Noise parameter A Noise parameter B Noise parameter C

Default (NMOS) 1e20 (PMOS) 9.9e18 (NMOS) 5e4 (PMOS) 2.4e3 (NMOS) -1.4e12 (PMOS) 1.4e-12 4.1e7

Unit none none none

Note

Em

em

Saturation field

V/m

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Process Parameters

Symbols used in equation Af Ef Kf

LINTNOI

Symbols used in SPICE af ef kf lintnoi

Description Flicker noise exponent Flicker noise frequency exponent Flicker noise coefficient
Length Reduction Parameter Offset

Default 1 1 0 0.0

Unit none none none m

Note

A.8 Process Parameters

Symbols used in equation Tox Toxm Xj 1 2 Nch Nsub Vbx Xt

Symbols used in SPICE tox toxm xj gamma1 gamma2 nch nsub vbx xt

Description Gate oxide thickness Tox at which parameters are extracted Junction Depth Body-effect coefficient near the surface Body-effect coefficient in the bulk Channel doping concentration Substrate doping concentration Vbs at which the depletion region width equals xt Doping depth

Default 1.5e-8 Tox 1.5e-7 calculated calculated 1.7e17 6e16 calculated 1.55e-7

Unit m m m V1/2 V1/2 1/cm3 1/cm3

V

Note

nI-3

nI-5 nI-6 nI-4 nI-7

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Geometry Range Parameters

A.9 Geometry Range Parameters

Symbols used in equation Lmin Lmax Wmin Wmax binUnit

Symbols used in SPICE lmin lmax wmin wmax binunit

Description Minimum channel length Maximum channel length Minimum channel width Maximum channel width Bin unit scale selector

Default 0.0 1.0 0.0 1.0 1.0

Unit m m m m none

Note

A.10Model Parameter Notes

nI-1. If Vth0 is not specified, it is calculated by
Vth 0 = VFB + s + K1 s

where the model parameter VFB=-1.0. If Vth0 is specified, VFB defaults to

VFB = Vth0 s K1 s
nI-2. If K1 and K2 are not given, they are calculated based on

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Model Parameter Notes

K1 = 2 2 K 2 s Vbm

K2 =

(1 2 )(

2 s s Vbm s + Vbm

s Vbx s

where

s is

calculated by
s = 2Vtm0 ln Nch ni

Vtm 0 =

k BTnom q

ni = 1.45 10

10

Tnom 300 .15

1 .5

exp 21 .5565981

Eg 0 2Vtm 0

Eg 0

7.02 104 Tnom = 1.16 Tnom + 1108

where Eg0 is the energy bandgap at temperature Tnom. nI-3. If pscbe2 <= 0.0, a warning message will be given. If ijth < 0.0, a fatal error message will occur.

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Model Parameter Notes

If Toxm < = 0.0, a fatal error message will occur.

nI-4. If Nch is not given and is given, Nch is calculated from

N ch =

1 2 C ox 2 2 q si

If both and Nch are not given, Nch defaults to 1.7e23 m-3 and is calculated from Nch.
nI-5. If is not given, it is calculated by

1 =

2q si N ch Cox

nI-6. If is not given, it is calculated by

2 =

2q si N sub Cox

nI-7. If Vbx is not given, it is calculated by

qN ch X t = s Vbx 2 si
nC-1. If Cgso is not given, it is calculated by

if (dlc is given and is greater 0), Cgso = dlc * Cox - Cgs1 if (Cgso < 0) Cgso = 0 else Cgso = 0.6 Xj * Cox

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Model Parameter Notes nC-2. If Cgdo is not given, it is calculated by

if (dlc is given and is greater than 0), Cgdo = dlc * Cox - Cgd1 if (Cgdo < 0) Cgdo = 0 else Cgdo = 0.6 Xj * Cox

nC-3. If CF is not given then it is calculated usin by

CF = 2 ox 4 10 7 ln 1 + Tox

nC-4.

If (acde < 0.4) or (acde > 1.6), a warning message will be given. If (moin < 5.0) or (moin > 25.0), a warning message will be given. If (noff < 0.1) or (noff > 4.0), a warning message will be given. If (voffcv < -0.5) or (voffcv > 0.5), a warning message will be given.

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