l

DO NOT OPEN THIS TEST BOOKLET UNTIL YOU ARE ASKED TO DO SO

T.B.C. : QGUGKFUA

Test Booklet Series

Serial

062440

TEST BOOKLET
ELECTRONICS & TELECOMMUNICATION'ENGINEERING
PAPER I Time Allowed : Two Hours
INSTRUCTIONS
1. IMMEDIATELY AFTER THE COMMENCEMENT OF THE EXAMINATION, YOU SHOULD CHECK THAT THIS TEST BOOKLET DOES NOT HAVE ANY UNPRINTED OR TORN OR MISSING PAGES OR ITEMS ETC. IF SO, GET IT REPLACED BY A COMPLETE TEST BOOKLET. ENCODE CLEARLY THE TEST BOOKLET SERIES A, B, C, OR D AS THE CASE MAY BE IN THE APPROPRIATE PLACE IN THE ANSWER SHEET. You have to enter your Roll Number on the Test Booklet in the Box provided alongside. DO NOT write anything else on the Test Booklet.

Maximum

Marks : 200

2.

3.

4.

This Test Booklet contains 120 items (questions). Each item comprises four responses (answers). You will select the response which you want to mark on the Answer Sheet. In case you feel that there is more than one correct response, mark the response which you consider the best. In any case, choose ONLY ONE response for each item. 5. You have to mark all your responses ONLY on the separate Answer Sheet provided. See directions in the Answer Sheet. 6. All items carry equal marks. 7. Before you proceed to mark in the Answer Sheet the response to various items in the Test Booklet, you have to fill in some particulars in the Answer Sheet as per instructions sent to you with your Admission Certificate. 8. After you have completed filling in all your responses on the Answer Sheet and the examination has concluded, you should hand over to the Invigilator only the Answer Sheet. You are permitted to take away with you the Test Booklet. 9. Sheets for rough work are appended in the Test Booklet at the end. 10. Penalty for wrong answers: THERE WILL BE PENALTY FOR WRONG ANSWERS MARKED BY A CANDIDATE IN THE OBJECTIVE TYPE QUESTION PAPERS. (i) There are four alternatives for the answer to every question. For each question for which a wrong answer has been given by the candidate, one-third (0'33) of the marks assigned to that question will be deducted as penalty. (ii) If a candidate gives more than one answer, it will be treated as a wrong answer even if one of the given answers happens to be correct and there will be same penalty as above to that question. (iii) If a question is left blank, i.e., no answer is given by the candidate, there will be no penalty for that question. DO NOT OPEN THIS TEST BOOKLET UNTIL YOU ARE ASKED TO DO SO

1.

1 ohm

4.

Consider the following statements 1. Power factor will be unity.

------7

i( t)
1 Henry

2. 3.

Current in circuit will be maximum. Current in circuit will be minimum.

vet)

= t u(t)

Which of these statements are correct with respect to resonance in R-L-C parallel circuit? The current in the above network is (aJ"J t - 1 + e ,
t

(a) (b)

1, 2 and 3 1 and 2 only 2 and 3 only

I u(t)
/' .>,

(c)

(b)
.. \ ." , ,.:,.'
\

I t2 - t + e-t I u(t)

(d&A and 3 only 5.

Number of state variables system, described by 3 yln] - - yln - 1] 4
IS

.' (c)
<

It

+ 1 + e-t I u(t)
/1

of discrete

time

(d)

It - 1 - e-t I u(t)

.6
1

._L
, .. '\

!....,

+ - yln - 2]
8

= xln]

2.

When waves travel along a transmission line from a generator to a load, through which region is power transmission taking place? (~._Only (b) Only re~~ through the conducting region through the non-conducting ~ and

(~ (b)
(c)

4
1

(d)

(c)

Both through conducting non-conducting regions

Which of the following pair of values of Land C should be used in a tank circuit to obtain a resonant frequency of 8 kHz? The bandwidth is 800 Hz and winding resistance of the coil is 10 ohms. (a) (b) 2 mR and 1 JlF 10 Rand 02 JlF

(d)

Through the conducting regions for half a cycle and through the non-conducting regions for the next half cycle

(~_'1'99

mR and 02 JlF

3.

x(t)

(d)

199 mR and 10 JlF

r-

7.

An elliptically polarized wave travelling in the positive Z-direction in air has x and y components

_+--_+------l_--+_--L

__

-2

-1

= 3 sin (rot Ey = 6 sin (rot EX

~z) Vim ~z + 75) Vim

The mathematical signal is

(a)

model of the above shown

x(t)

(b)

= u(2 + t) x(t) = u(t - 2)

x(t) = u(t - 1)

If the characteristic impedance of air is 360 n, the average power per unit area conveyed by the wave is
(a) (b)

8 W/m2
4 W/m2

(cJyrx(t) = u(2 - t) (d)

(c) (d)

625 mW/m2 125 mW/m2

Q-GUG-K-FUA

( 2 - D )

The value of a resistance as measured by a 12. Wheatstone bridge is 100 K using a voltage source of 100 V The same resistance is measured by the same bridge using 150 V The value of resistance is
(a)

The diffusion length for holes Lp, is the (a)

c /

Average distance which an injected hole travels before recombining with an electron Maximum distance travelled by a hole before recombining with an electron Length of the region in which diffusion takes place Minimum distance travelled by a hole before it recombines with an electron

(b) (c)

150 K
"V P

(b) 155 K
(c)
(d)

166 K 100 K

'l.

.}

.. c.

(d)

9.

In the case of ABeD parameters, (av (b) (c) (d)

if all the

impedances in the network are doubled, then

and D remain unchanged, e is halved and B is doubled A, B, e and D are doubled A and B are doubled, unchanged A and D are unchanged, and B is halved e and Dare e is doubled

13. 1 ohm 1 ohm

1ohm

v1

10.

Unit step response of the system described by the equation yen) + yen - 1) = x(n) IS
(a)

The above network controlled sources.

contains

resistors
IS

and

V Gl2 = - 2
Vj ~

Z2

\../"(Z

+ 1)(Z -1)
Z

(a)

4 5

(b)

(Z + 1)(Z -1)

(b)

--

(c)

Z+l
Z-1 Z(Z -1)
(Z (c)

5
-

'-

5
--

(d)

+ 1)
functions for of continuous state the LTl 14. time
I

(d)

11.

The transfer representation system:

q (t) = Aq(t)
is given by

+ bx(t)

,.

The frequency response H(D) of a system for impulse sequence response h[n] = o[n] + o[n - 1] is
(~YI(n)

.(

yet) = cq(t) + dx(t)

= 2 cos

(~) L - ~ - D
Q

(b)
(c) (d)

H(D) H(D) H(n)

= cos D L

(wc (sl - Ar! b + d

(b)
(c)

b (sl - Arl b + d
c (sl -

= 2 cos D L =2L
-Q

Ar! b + d

- 2

(d)

d (sl - Arl b + c
( 3 - D )

Q-GUG-K-FUA

15.

Consider the following statements The inter element spacing of 1.

17.

Consider the following symmetrical T section : 1.

statements

More than "- in array antenna will produce grating lobes in unscanned condition. More than "-/2 but less than "- in array antenna will produce grating lobe under scanned condition.

Z11 and Z22 are equal. Z12 and Z21 are equal. Z11 and Z12 are equal. Z21 and Z22 are equal.

~\
(

2. 3.

2.

4.

Which of the above statements (av1 (b) will (c) (d) and 2 only

are correct?

3.

Less than "-/2 in array antenna will not produce any grating lobe.

2 and 3 only
3 and 4 only 1, 2, 3 and 4

4.

More than 15 "- in array antenna not produce any grating lobe.

Which of the above statements (a) (b) (c) (d) 1 and 2 only 3 and 4 only 1, 2 and 3 only 1,2,3 and 4

are correct ?

18.

The magnetic flux density B and the vector magnetic potential A are related as

(al,/B
(b)
(c)

= V xA A = V x B B = V. A
A

. \ '\..

16.

Match List I with List II and select the correct answer the lists : using the code given below 19.

(d)

= V B

List I (Excitation)
A. B.

List II (Two-port parameters)

1. z

Two milli ammeters with full scale currents of 1 mA and 10 mA are connected in parallel and they read 05 mA and 25 mA respectively. Their internal resistances are in the ratio of (a) 1: 10 10: 1

II' 12 VI'V2 V1,I2 11' V2

(b) 2. y (c)

1: 5
5: 1

C.
D.

3. g
4. h 20.

(d)

The Fourier transform of unit step sequence is (a)

Code:

1rO (n)
1 1-e-jQ 1'Q e-J

B
2
2

C 3 3 2 2

D
(b) 4

(V
(b) (c) (d) 4

1 4 1

1
4

(W no + 1(d) 1 -e -jQ

3 3

Q-GUG-K-FUA

(4 - D )


A long 1 metre thick dielectric (E = 3 Eo) slab 24. occupying the region 0 < x < 5 is placed perpendicularly in a uniform electric field

y
A

Eo = 6ax'
dielectric is
(a) (b) (c)

The

polarization

Pi

inside

the

4 Eo
8 Eo

ax ax ax

~ __

-t=D_-7X

36 Eo Zero

(d) 22.

Consider points A, B, C and D on a circle of radius 2 units as in the above figure. The items in List II are the values of al at

t
2
If\
''(

30A

different points on the circle. Match List I with List II and select the correct answer using the code given below the lists: List I List II 1.
ax

3 A.

(.

\\..

The power dissipated in the 1 n resistor is 1 W due to the 5 V voltage source alone and 576 W due to 30 A current source alone. The total power absorbed in the same resistor due to both the sources is
(a)

B.

2.
3. 4. 5. 6.

ay
- ax

C.
D.

)0

577 W 575 W
(ax

(b)

+ ay) /

12 12

(<>L/625 W
(d) 529 W

- (ax

+ ay) /

(ax -ay

)/12

23.

Consider the following statements an FET: 1. 2. 3. 4.

regarding Code: A
(a) (b) (c) (d)

Its operation depends upon the flow of majority carriers only. It has a high input resistance. It is suitable for high frequency. Its operation depends upon the flow of both majority and minority carriers. are correct ?

B
4

C 5 5 2
4

2 2
'4

1
1 3

6
6 5

Which of the above statements (a) (b) 1, 2, 3 and 4 1 and 2 only

(\1,/ 2 and 3 only

(d) 3 and 4 only

Q-GUG-K-FUA

25.

The incorrect statement (a)

(b)

is

28.

The flux and potential line form: (a) Concentric and straight (b) Concentric circular charge and due are circular conductors

functions to two of the

due to a concentric following

Thermistor has a high sensitivity. Thermocouple external operation. does not require for an its

electrical

source

equipotential

lines

radial flux lines circular flux lines and

(c)

Platinum has a linear R - T relationship. does not require an external

straight equipotentiallines (o/fhermistor electrical source for its operation. (c) Equipotentials concentric 26. In ionic crystals, electrical conductivity is (a) (b) Very high Depends on material Depends on temperature Practically zero 29. LED is a (o/i>-n 27. Consider the following statements: 1. The Laplace transform is of the unit (b) (c) (d) s x Laplace Transistor diode (d) due to line charge are

cylinders

and equipotentials

due to two conductors are straight lines Equipotentials straight due to line charge are

flat surfaces and those due to

two conductors are concentric cylinders

(0/
(d)

3
Thermistor Gate

impulse

function

transform of the unit ramp function. 2. The impulse function is a time derivative of the ramp function. 3. The Laplace transform
IS

30. of the unit

--+ v
3

impulse

function

s x Laplace

transform of the unit step function. 4. The impulse function is a time derivative of the unit step function. Which of the above statements (a) 1 and 2 only 4 only are correct ? Voltage and current expressions for the above circuit are given at t 2: 0 as v

125 e-50t V,

i = 5 e-50t A. The value of L will b~

(a)

0005 H 0'05 H
,
"

(0/3 and
(c) (d)

(b)

2 and 3 only 1, 2, 3 and 4

(clrlO'5 H
(d) 5 H

Q-GUG-K-FUA

( 6 - D )
(

Consider the following statements: Fourier series of any periodic function X(t) can be obtained if

34.

1.

fI
o

xlt) dt <

00

A single strain gauge of resistance 120 n is mounted along the axial direction of an axially loaded specimen of steel (E = 200 GPa). The percentage change in length of the rod due to loading is 3% and the corresponding change in resistivity of strain gauge material is 03%. For a Poisson's ratio of 0,3, the value of the gauge factor is
(a)

13 15 17 20

2.

Finite

number

of discontinuous

exist
(b) (c)

within finite time interval t. Which of correct ? (a) (b 1 only 35. the above statements is/are

(d)

V2 only
Both 1 and 2 Neither 1 nor 2

(c) (d)

10 mB

32.

In a variable type carbon resistor the carbon track is formed of a mixture of carbon, resin and (~Clay (b) (c) (d) Manganese Nickel Cadmium

In the above shown circuit, the independent current source generates zero current for t < 0 and a pulse instant 5 t e -4t A, for t > O. At what attain the of time, will the current

maximum value in the circuit? (a)

(b)

025 sec 05 see 1 sec

2 see

(c)
(d)

33.

A standard b

air filled waveguide WR-187 has

inside wall dimensions of a

4755 em and 36.

2215 em. At 12 GHz, it will support TElO mode only TElO and TEzo modes only
, ,.
o

Frequency scaling r relationship between discrete time frequency (m and continuous time frequency (w)] is defined as
(a)
W

(a) (b) (c)

= 2n
2

(b)

w=

Ts/0.

TElO' TEzo and TEol modes only

(c)

n = 2 wiTs

Q-GUG-K-FUA

( 7 - 0 )

37.

The intrinsic impedance of copper at 3 GHz 41. (with parameters :

11 =
IT

41( x 10-7 Him;

58 x 107 mho/m)

10-79/361(;

and
lOV

l
(a)

i
(t)

switch is closed at t
lQ lQ

=a

will be (a)
(b)

002 ejn/4 ohm 002 ejn/2 ohm 02 eJn ohm . /4 02 eJn ohm
. /2

IF

(c) (d) 38.

The value of the current i(t) in amperes in the above circuit is O 10 e-t 10 (1 - e-t)

t=O
~ 10Q

(W10
(c) (d)

~ tOV

~3F

r ~V;-6F
1,;'.'1-.

42.

A short current element has length l = 003 A, where A is the wavelength. The radiation resistance for uniform current distribution is
(a)

0072 80
1(2

1(2

In the circuit shown above, switch S is closed at t = O. The time constant of the circuit and initial value of current i(t) are (a) (b) (c) 30 see, 05 A 43. 60 see, 10 A 90 see, 10 A

(b)

(0/ 72 n
(d) 80

If random process X(t) and Yet) are orthogonal then

(avxy(f)

=
=

0 Sx( )

(~,.20

see,

05 A
(b) Sxy(f)

Sy( )

39.

A voltage source .of 240 volts having an internal impedance of (3 - j4) n is supplying power to a complex load impedance Z1' What will be the maximum power transferred to the 44. load?
(a)

(c)

~(T)
H(f)

= h(T)

(d)

=a

24 kW

(b)

36 kW

A first order circuit is excited with a dc source. The current i(t) through any element of the circuit can be written as (if and ij are the final and initial values, respectively, of the current)
t

(4'8 kW
(d)

(a)

i.1 - (i,1 - if)

e T
.

60 kW
t

i,

40.

Atomic number of silicon is

(a) (b)

(bvr;: (c)
1 1

(if - ij) e T
t

12 13
. (iIf
- 1

.) e T 1
t

(cV14
(d)

15 ( 8 - 0 )

(d)

if - (ij

if) e

Q-GUG-K-FUA

Match List I with List II and select the correct 47. answer using the code given below the lists:

In a three element Vagi antenna (a) (b) All the length three elements are of equal

List I

List II

A.

-d = 025 , a = 90 )..

1.

$x

The driven element and the director are of equal length but the reflector is longer than both of them

B.

i=0'5 ' a = 0 A

2.

fEr x
Y 48.
X

(o/The reflector is longer than the driven element which in turn is longer than the director (d) The reflector is longer than the driven element which in turn is longer than the reflector

C. n

"'

iA = 05 ' a = 180

3.

Consider the following statements regarding depth of penetration or skin depth in a conductor: 1. It increases as frequency increases.
2.

It is inversely proportional root of 11 and cr. It is inversely root of f. proportional

to square to square

Y
D.

3.
4.

./

i = 10 ' A

a = 180

4.

~x
(a) B 3
1

It is directly proportional of 11 and cr. 1 and 2 only

to square root correct ?

Which of the above statementsare

--

Code:

A (a) 4
(b) \..
(c)

C
1

D 2
4

(b) 3 and 4 only (<;2../2 and 3 only (d) 49. 1, 2, 3 and 4

2 4 2

3 3 1

1 3

2
4

(d)

Consider the following statements regarding the use of Laplace transforms and Fourier transforms in circuit analysis: 1. Both make the solution problems simple and easy. of circuit of to and

:e. he .al
It)

46.

The output of a linear system for step input is, t2 e-2t. Then the transfer function is
(a)

2. 3.

Both are applicable for the study circuit behaviour for t - a to a. Both convert differential algebraic equations. equations

(b) (s

2s

4.

+ 1)3
s

Both can be used for transient steady state analysis.

Which of the above statements

are correct ?

(c)

(atfi, 2, 3 and 4
(b) 2, 3 and 4 only 1, 2 and 4 only 1, 3 and 4 only (c) (d)

(d)

Q-GUG-K-FUA

( 9 - D )

50.

The mode with lowest cutoff frequency for an 54. electromagnetic wave propagating between two perfectly conducting. parallel plates of infinite extent is (WTElO
(b)

Consider the following statements Thermistor: 1. 2. 3. 4. It has a high sensitivity. It has a temperature. linear

regarding

relationship

with

TMlO

(c) TMol (d) TEM 51. Encoder (a) Assigns quantized values quantized values to binary (bUChanges values (c) (d)

It is a resistive device. It can be used as a time-delay device. are correct ?

Which of the above statements (a) (b) (c) values to numerical values to binary 55. (~1, 1, 2, 3 and 4
2, 3 and 4 only

1, 3 and 4 only

Changes quantized values Changes values numerical

2 and 3 only

52.

Consider the following statements 1. 2. 3.

In cylindrical waveguides the attenuation will be minimum, at a frequency which is J3 times the cutoff frequency for the following modes of operations:

(Electric or magnetic) field must have two orthogonal linear components. The two components same magnitude. must have the

1.
2. 3. 4.

TElO
TMn

TMlO TEn
1, 2, 3 and 4 2 and 3 only 1 and 2 only 3 and 4 only of

The two components must have a time-phase difference of odd multiples of 90.

Which of the above are correct ? (a) (b) (c) (d) 56.

Which of these are the necessary and sufficient conditions for a time-harmonic wave to be circularly polarized at a given point in space? (a) (b) (d) 53. 1 and 2 only 2 and 3 only

(CV1, 2 and 3

1 and 3 only

In a junction transistor, recombination electrons and holes occurs in (a) Base region only Emitter region only Collector region only All the 3 regions

If the response of LTI continuous time system to unit

step

input

IS

. (1 - '21 -2t) '2

e

(b) (c) () 57.

, th en

impulse response of the system is

(~_~e-2t) (tzY{e-2t)
(a) (c)

Given a range of frequencies, which of the following systems is best for transmission line load matching? (a) (b) Single stub Double stub stub with adjustable position

(1 -

e-

2t)
(10 - 0 )

(cVSingle (d)

(d)

Constant

Quarter wave transformer

Q-GUG-K-FUA

An axial magnetic field is applied to a 61. cylindrical rod. The Faraday rotation of a plane polarized beam after emergence from the rod is 5. If both the field and length of the rod are doubled, then the angle of rotation
IS

8Q

4
12 V

Q ~

_is.,

T3 F

1H
40

t=Ol 6F

(a)

(b)
(c) (d)

5
10 20

In the circuit shown above, the switch is closed after a long time. The current is (0+) through the switch is
(a)

1A 2/3 A

Consider the following statements the cavity resonator: 1.

relating to

(b)
(c)

The cavity resonator does not possess as many modes as the corresponding waveguide does. The resonant frequencies of cavities are very closely spaced. The resonant frequency of a cavity resonator can be changed by altering its dimensions. is/are correct ? 62.

1/3 A

2. 3.

If a random process statistical averages (a) (~nd (c) (d)

Xtt)

IS

ergodic then,

and time averages are different time averages are same are greater than time averages are smaller than time averages

Which of the above statements (a) 2 and 3 only

(0/2 only
(c) (d) 3 only 1, 2 and 3

60.

Consider the following statements: For a rectangular waveguide with dimensions a x b where b is the narrow dimension, small value of b 1. 2. 3. Gives a larger separation between cutoff frequencies of TEol and TElO modes. Gives increased attenuation. Limits power handling capabilities because of breakdown field limits. is/are correct ?

63.

The correct statement (a)

is

Microtrip lines can support pure TEM mode of propagation but shielded coaxial lines cannot Microtrip lines cannot support pure TEM mode of propagation but shielded coaxial lines can

(b)

Which of the above statements (a) (~, (c) (d) 1 and 2 only 2 and 3 2 only 3 only

(cVBoth microtrip lines and shielded coaxial lines can support pure TEM mode of propagation (d) Neither microtrip lines nor shielded coaxial lines can support pure TEM mode of propagation

Q-GUG-K-FUA

( 11 - D )

64.

67.

A line of characteristic impedance 50 ohms is terminated at one end by +j50 ohms. The VSWR on the line is

+
200V
24 V 24Q 8Q

(0/1
(b)
(c)
00

1
The value of R in the above circuit is
(a)

0 j

(d)

40 68.
4Q

(b) 400 (0/440

50V

SOQ

20 Q

(d) 440 0

65.

A
N

The value of current i.n SO 0 resistor of above circuit is

(0/'05 A

B
For the network shown above I = (02 V - 2) A, (I = the current delivered by the voltage source V). The Thevenin voltage Vth and resistance
Rth

(b)
(c)

20 A 50 A 200 A

(d)

for the network

N 69.
2Q

across the terminals AB are respectively

(a) -

10V, 5 Q V, 5 Q
10 V, 02 Q
Q

3Q

A
(0/10
(c) -

B
2Q

lOV
3Q Thevenin resistance equivalent voltage VAB

(d)

10 V, 02

and

R, across the terminals

AB in the

66.

Z and Laplace transform are related by

(a) (b) s

above circuit are

(a) (b)

= In =T

ln z

6 V, 50 4 V, 50 V, 240 2 V, 250

(~=z

(c~2 T s =In z ( 12 - D )
(d)

(d)

Q-GUG-K-FUA

Alumina is a (~electric (b) (c) Ceramic Semiconductor

73.

Convolution of two sequences X1[n] and X2[n] is represented as (a) X1(z)

* Xz(z)

(VI(z) X2(z)
(c) X1(z) + Xz(z) X1(z)/Xz(z) (d) 74.

Cd) Conductor

71.

+ 100 V Vs

A half-wave dipole working at 100 MHz in free space radiates a power of 1000 Watts. The field strength at a distance of 10 kms in the direction of maximum radiation is (a) (b) 173 mV/m 212 mV/m 222 mV/m

What is the voltage across the load resistance, ~ in the above circuit ? The value of each resistor connected in the circuit is 10 n. (a) 333 V V 75.

(c)

Cd) 222 mV/m

(bU'33'33 (c)
(d)

33333 V
0 V 220V

120Q

60Q

200V

72.

At UHF short-circuited lossless transmission lines can be used to provide appropriate values of impedance. Match List I with List II and select the correct answer using the code given below the lists : List I A. B. C. D. List II 1. Capacitive 2. 3. 4. Inductive

l
200V 220V

l
circuit shown above, the current

In

the

through RL is

1< 'A/4 I

(V6A
(b) 4 A (c)

= A/4 < I < A/2

2A
0

1= 'A/4 1= 'A/2

0
00

(d)

'-

Code:
A

76.

Decimation is the process of (a)

(b)

B
1 1 4 4

C
4 4 1 1

(V
(b) (c) (d) 3 2

Retaining sequence other than zeroes

values

of Xp[n]

3
2

Retaining all sequence values of Xp[n] ividing the sequence ~alue by 10 Multiplying the sequence value by 10

3
2

(c.
(d)

Q-GUG-K-FUA

( 13 -' D )

77.

28Q

81.

The driving point impedance of a network given by Z(s)

2s + 1 . The Foster realization s(s + 1) IH

4Q

5A
~

8Q

of the network is

I ohm
. (a)

In the circuit shown above, the current I is

(a)

IF
I ohm

1A

(V:'5 A
(c)

25 A
(b)

(d) 4 A
IH

'i
78. It is required to find the current through a particular branch of a linear bilateral network without mutual coupling when the branch impedance takes four different values. Which one of the following methods will be preferred? (a) Mesh analysis
/'

I ohm

(~

(b0hevenin's (c) (d)

equivalent circuit

IH

Nodal analysis Superposition theorem (d)

IF

79.

A source having internal impedance of 82. (9 + j12) Q is to deliver maximum power to a resistive load. The load resistance should be

(aV
(b) (c)

9Q

12 Q 15

An air-filled rectangular waveguide has dimensions of a = 6 em and b = 4 cm. The signal frequency is 3 GHz. Match List I with List II and select the correct answer using the code given below the lists :

n
A. B.

List I

--

List II

(d)

21 Q

TElO TEOl TEll TMn

1. 25 GHz 2. 3. 4. 375 GHz 4506 GHz 4506 GHz

1
J

---

I I

C. 80. There' are two conducting plates of sizes 1 m x 1 m and 2 m x 2 m. Ratio of the capacitance of the second one with respect to that of the first one is l D.

.\ -v- \

~i ".

Code: A
(av B 2 C 3 D 4

(~4

(b) 2
(c)

(b) 4
(c)

2
3

3 2
2

1
4

1/2

(d) 1/4
Q-GUG-K-FUA ( 14 - 0 )

(d) 4

If X(to
(a) (b)

= 8(to

(j) 0)

then X(t) is
\. l..

86.

Match

List I with

List II and select the

e-jOlot 8(t)

correct answer the lists : List I (Transducers) A. L.V.D.T.

using the code given below

List II (Type of transducer)

1.

Resistive Inductive

(d)

B.

Strain Gauge Dielectric Gauge Thermocouple

2.

84.

An electric charge of

Q coulombs is located at

C.

3. Capacitive

the origin. Consider electric potential V and electric field intensity E at any point (x, y, z). Then (a) (b) (c) (d)
I'

D.

4.

Self generating

E and V are both scalars Code: E and V are both vectors

A
E is a scalar and V is a vector (a) E is a vector and V is a scalar (b) regarding a
(~

B 3

D 4 2 4 2

2 4

1 1
3 3

V
85. Consider the following statements transmission line :
1.

3 1

(d) is constant and

IS

Its

attenuation

independent of frequency. s e h 2. Its attenuation varies linearly with

87.

Consider the following: ' In a parallel plate capacitor, let the charge be held constant while the dielectric material is

e
3.

frequency. Its phase shift vanes linearly with

replaced by a different dielectric. Consider frequency. 4. Its phase shift is constant and
IS

1. 2. 3. are correct

Stored energy. Electric field intensity. Capacitance.

independent of frequency. Which of the above statements for distortionless line ?

'\'

Which of these changes ? (a) (b) 1 only

~.

(a) (b) (c) (d)

1, 2, 3 and 4

1and 2 only
2 and 3 only 2 and 3

2 and 3 only 1 and 3 only 3 and 4 only (c) (~1,

Q-GUG-K-FUA

( 15 - 0 )

88.

,-----;~I __

,--1Q

----,

90.

Consider the following statements

+ V
rv

1V

They are given as necessary conditions for driving point functions with common factors in p(s) and q(s) cancelled:

c
1H

1.

-w

= 1 rls

The coefficients of the polynomial in pts) and qts) must be real. Poles and zeroes must be conjugate pairs if imaginary or complex. The terms of lowest degree in p(s) and q(s) may differ in degree by one at most. the above statements is/are

2.
3.

In the above circuit, the value of C for the circuit to exhibit a power factor of 0'86, is approximately

Which of correct?

(a)

04 F 06 F

u~v
(b) (c) (d)

1,2 and 3

1 only
1 and 2 only 2 and 3 only

(b)
(c)

14 F 01 F

(d)

91.

For distortionless

transmission

through

LTI

system phase of H( co) is (a) 89. A long straight non-magnetic conductor of

(b)

Constant One Zero Linearly dependent on (()

radius 8 mm is carrying

a uniform current

(c) ()

density of 100 kA/m2 in the az direction. For this case, which one of the following is not correct ?

92.
(a)
(b)

Consider the following statements 1. 2.

H = 105 aZ Nm2 for 0 < p < 8 mm

The coefficients in the polynomials pis) and q(s) must be real and positive. Poles and zeroes of z(s) must conjugate if imaginary or complex. be

V x B

=0

(c)

The magnetic field intensity for . 105 P > 8 mm is pa~ Nm

Which of these statements

are associated with

I
I!

the driving point function Z(s) = p(s) ? q(s) by the (a) Both 1 and 2

(d)

The

total

current
11:

carried

conductor is 64

(WI only (c) (d) 2 only Neither 1 nor 2

Q-GUG-K-FUA

( 16 - D )

93.

Consider the following statements relating to 96. the electrostatic and magneto static fields :
1.

A circuit consists of two clocked JK flip-flops connected as follows : J 0 and

Kl

= Ko =

Ql'

J 1 = Qo

The relative distribution of charges on an isolated conducting body is dependent on the total charge of the body. The magnetic flux through surface is zero. any closed

= Qo'

Each flip-flop receives the clock The circuit acts as a

\

input simultaneously. (~ (b) (c) (d)

'

urs

2.

Counter of mod 3
,.

~ ~
\ 4,.,

.)

.... .

\ '\:'

.
..
4 ~.

~,

md at

Which of the above statements (~either (b) 1 nor 2

is/are correct?

Counter of mod 4 Shift-left register Shift-right register

/,,\ 1\.,.

1 only 2 only
Both 1 and 2 97.

'ire

(c) (d)

Which

one

of

the

following

IS

not

94.

The crystal in which atoms are chemically highly inactive and they do not form compounds with other atoms is (a.&/Ionic crystal

ferromagnetic material ? (a) (b) (c) Cobalt Iron Nickel

~TI

(b) (c) (d)

Metal Valence crystal Van der Waals crystal

(d) Bismuth \.,,/0-'

95.

A two-port network has the ABCD parameters

[7 8].
3 4

98. Two such identical

,

5Q
+
-----:) II

5Q
+

5Q
+

networks

are

5Q

~ 2 V2

cascaded. The ABCD parameters cascaded network will be

of the overall

VI

5Q

vz

be With reference to the above network the value of Zll will be (a) (b)
(c)
\.
)

, .

,.

-3
3

, 1

(c)

-1

(d)

64]
16
( 17 - D )

(d)

-5

Q-GUG-K-FUA

99.

When donor atoms semiconductor, it

are

added

to

Directions:

(a)

Increases the energy band gap of the semiconductor

Each of the next twenty (20) items consists of two statements, one labelled as the 'Assertion (A)' and the other as 'Reason (R)'. You are to examine these two statements carefully and select the answers to these items using the codes given below .'

(b)

Decreases the energy band gap of the semiconductor

Codes:
(a) Both A and R are individually true and R is the correct explanation of A Both A and R are individually true but R is not the correct explanation of A A is true but R is false A is false but R is true
]

(c)

Introduces a new narrow band gap near the conductor band

(b)

(c) (~Introduces a new discrete energy level below the conduction band (d)

101. Assertion (A).' A

linear

system

gives

bounded output if the input is bounded. 100.

1
current 15 V

t=o

10 Q

IOQ

Reason (R).'

The roots of the characteristic equation have all negative real parts and the response due to

IOU

1
result

IH

initial conditions decay to zero as time t tends. to infinity.

The value steady-state

of V that

would

in a the

102. Assertion (A) .' The system described by y2(t) + 2y(t) = x2(t) + x(t) + c is a linear and static system. Reason (R).' The dynamic by system
IS

of 1 A through

inductor in the above circuit is

(~30V (b)

characterized equation.

differential

103. Assertion (A).' When five percent of silver is added to copper to form an resistivity alloy, the electrical of pure copper. Reason (R):' Silver has a higher value of resistivity than that of copper ..

(c)

20 V
25 V

of the alloy is more than that (d)

Q-GUG-K-FUA

( 18 - 0 )

-=,

104. Assertion (A): Magnetic of an

susceptibility

value

109. Assertion (A):

In an intrinsic semiconductor, the concentration and holes of electrons with increases

antiferromagnetic

substance at 0 K is zero. Reason (R) : At 0 K, atomic magnetic Reason (R):

increase in the temperature. Law of mass action holds good in case of semiconductors.

moments magnetic

are frozen with dipoles pointing III

random directions. 105. Assertion (A): A thermocouple component. Reason (R) : is an active 110. Assertion (A) : Capacitance between two

parallel plates of area 'A' each by a and distance of separation 'd' is EA/d for large Aid ratio. Reason (R) : Fringing electric field can be

It IS activated temperature gradient.

106. Assertion (A): Synthesis problem IS not unique in the sense that we . may be able to find more than one network which provides prescribed response. Reason (RJ : The problem of synthesis deals with the design and specification of the network.

neglected for large Aid ratio.

111. Assertion (A) : In

solving

boundary the method

value of

problems,

images is used. Reason (R) : By this technique, conducting

surfaces can be removed from

the solution domain. 107. Assertion (A): In an intrinsic semiconductor, electron mobility in conduction band is different from hole 112. Assertion (A): The velocity of light in any mobility in valence band. medium is slower than that of Reason (R) : In an intrinsic semiconductor, electrons and holes are created solely by thermal excitation across the energy gap. 108. Assertion (A): At very high temperatures, Reason (RJ: vacuum. The dielectric constant of the vacuum is unity and is lesser than that of any other medium.

both p and n-type semiconductors behave intrinsic semiconductor. Reason (R) : In n-type semiconductor

as 113. Assertion (A): To obtain high Q, a resonator should have a large ratio of the Reason (R): volume to surface area. It is the volume that stores

majority carriers are electrons and in a p-type semiconductor the majority carriers are holes, whereas III an intrinsic f semiconductor the number of holes and electrons are equal.

energy and it is the surface area that dissipates energy.

Q-GUG-K-FUA

( 19 - D )

114.

Assertion (A) : TEM

(Transfer

Electro

118. Assertion (A):

If we have two p-n-p and n-p-n transistors of identical

Magnetic) waves cannot ,propagate within a hollow waveguide of any shape.

construction, the n-p-n transistor will have better

Reason (R):

For

a TEM

wave

to exist

frequency response characteristic p-n-p transistor. compared to the

within the waveguide, lines of H field must be closed loops which requires an axial component of E which is not present in a TEM wave.

Reason (R):

The

diffusion

constant

of

electron is higher than that of holes.

115.

Assertion (A): Si is mainly used for making

ICs and not Ge. 119.

Assertion (A) : Many

semiconductors

where

Reason (R):

In Si, 8i02 layer which acts as an insulator can be formed for isolation purposes. Corresponding oxide cannot be formed in Ge. layer

minimum energy in the conduction band and maximum energy in the valence band occur at the same ~ value of k (wave vector), are

116.

Assertion (A): The short-circuit

current

gain

preferred for optical lenses.

of a bipolar junction transistor, in common base configuration increases with increase in the reverse bias collector to base voltage.

Reason (R) :

For such semiconductors,

the

efficiency of carrier generation and high. recombination is very

Reason (R) :

With' increase

in the reverse the

bias collector to base voltage, the effective base width 120. Assertion (A): At low temperature, decreases. conductivity of a semiconductor 117. Assertion (A): A bipolar junction transistor basically a current amplifier. is increases

with

increase in the temperature.

Reason (R): Reason (R):

The most simplified model of a BJT has a current dependent current circuit, directly source in its output whose depends magnitude upon the

The breaking bonds increases

of the covalent with increase generating

in the temperature,

increasing number of electrons and holes.

input current.

Q-GUG-K-FUA

( 20 - D )