Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Abstract
Until now, most of the power supply for electronic products were the switching mode power supply. As a product that combined the control IC and the MOSFET, both used in the switching mode power supply, into one package, the SPS attempts to include the maximum number of external components to reduce the surrounding components as much as possible. It also strengthened its protection function. The SPS is available in all SMPS from small power supplies such as the charger to large power equipments such as adapters, printers, PCs and monitors. Especially, the SPS (KA3S series) (herein called SPS) described in this note is especially appropriate for the quasi resonant power supply used mostly in color TVs and is being sold through recent production. The SPS is classifed according to the voltage and current rating of the equipped MOSFET. The 5 types in the KA3S series, 800V (6A, 8A) and 650V (7A, 9A, 12A), developed to present are based on these ratings. Generally, the yback or forward method power supply used most widely in general electronic products employ the xed frequency hard switching method. For monitors and other TV-like displays, this noise directly affects the display quality. This why the quasi resonant yback switching is required. The quasi resonant-type operation is appropriate for TVs, monitors, VCR-like displays and related products because it greatly reduces the switching noise from dv/dt by using the snubber capacitor added between the MOSFET drain and source to extend the switch's turn off time. Furthermore, this method reduces switching loss by turning on the SPS when the voltage across is minimum or zero. The switching frequency of the SPS for TV is determined according the external SYNC circuit through SPS #5 pin, S/S (SYNC & SOFT START). According input AC line voltage and load conditions, the frequency is made to vary through the SYNC circuit; this minimizes the display noise. If the voltage of the SPS #5 pin has not reached Vsyth (typ. 6.4V), then, it switches at the internally set 20kHz frequency. Recently, TV manufacturers are worrying about having to meet the regulation on stand-by power consumption (i.e. Energy star in U.S.A.) The SPS executes the Burst Mode operation in which the SPS switching for a xed interval and stops and repeats this type of intermittent switching to reduce the switching loss which, in turn, reduces the standby power. This Burst Mode opertion can be implemented to satisfy the standby power regulation without having to add many components.The BURST MODE operation is vital to minimizing the switching loss in the standby state. To reduce the EMI generated during switching, the SPS is designed with much lower switching speed than that which drives the general MOSFET. It is designed to have a switching speed which disregards the IC input voltage, VCC.
In this perspective, not only is the SPS for the TV well-suited for making a low cost, high performance power supply but also, using few components, to satisfy the standby power consumption regulation.
1. Important Characteristics
Current Mode Control Quasi-Resonant Operation, Minimum Voltage Switching Low EMI emmision Substitutable for FREE VOLTAGE Power Input Auto Restart after Shutdown Optimum Gate Driver Design Low Standby Power Consumption (BURST MODE OPERATION) Various Protection Circuits Overvoltage protection Overload Protection Thermal shutdown Overcurrent Protection
2. Why the general yback method is inappropriate for the TV power supply
In the general yback power supply, resonance is mainly generated between the transformer primary inductance and the capacitance, which exists between MOSFET drain-source, after the MOSFET turns off. The instant the MOSFET primary switch turns on, the high voltage charged in the drain-source capacitor temporarily discharges, generating a large current spike. In the ideal case, the drain-source maximum and minimum voltages are as follows: Vdsmax = Vdc+(Np/Ns)*Vo Vdsmin = Vdc-(Np/Ns)*Vo Np: Number of transformer primary turns Ns: Number of transformer secondary turns Vo: Output Voltage Vdc: Voltage of the rectied AC line (DC link capacitor voltage) When the MOSFET turns on, a very complex waveform appears and will be affected by the transformer leakage inductance, MOSFET drain-source capacitance and reverse recovery current of the secondary diode etc. If it turns on at a very high voltage, a very large current spike, generated as the drain-source capacitor discharges, produces noise. The quasi resonance operation executes minimum or zero voltage switching to reduce this noise.
Vcc Vz [V]
Figure 1. Start-Up Operation If the Vdc voltage divided by resistance of the start-up resistor results in current larger than the SPS start-up current, then, this start-up resistor is selected. Two start-up resistors are used to reduce the Set failure due to the error of resistor breakdown voltage and to reduce the Set failure related to the Surge. Furthermore, it is best to use two small capacity resistors connected in series. In SPS initial start-up operation, the start-up current, owing from the Vdc and through the resistor, charges the VCC capacitor. If the VCC voltage becomes greater than the start-up voltage of 15V, the SPS starts switching the internal MOSFET. Once the MOSFET starts to switch, the current in the SPS control IC abruptly increases to 12mA, which makes it difcult to operate with just the current owing through the start-up resistor is difcult. Therefore, after start-up, the transformer VCC windings supply most of the SPS consumption power. If the VCC power capacitor becomes too large, the start-up time is longer; therefore, an appropriate size capacitor (in operating is 22~47F in operation) is be set. Figure 1 describes this operation. At start-up, the VCC only needs to be maintained at 10V. However, the VCC must be set (about 16~20V) such that OVP (min. VCC voltage above 23V) does not operate in the transient state.
Rev C, November 1999
VDS1
VDS
ID
Vcb
VSS Imp Im
ICR
ID2 t0 t1 t2 t3 t4 t4 t5
D1
CR
Figure 3. Equivalent Circuit at MOSFET Turn-Off At t0 the MOSFET drain current is compared in the IC internal current sense comparator and the MOSFET turns off. The MOSFET gate driver terminal in the SPS is set such that its turn-on and turn-off drive characteristics do not generate noise on the display. When the MOSFET turns off, the energy stored in transformer magnetic inductance increases the equivalent output capacitor(Coss) voltage of Vds and the snubber capacitor voltage between the drain-source. Because the equivalent output capacitor (Coss) of the MOSFET is much smaller than the snubber capacitor, most of the charging current ows to the snubber capacitor. Until Vds voltage reaches the sum of the DC input voltage (Vi) and primary side winding voltage (Vr:nVo) from to the secondary side voltage at (t1), the energy stored in the transformer magnetic inductance is not supplied to the secondary side during this interval because the secondary side diode is not on. The Vds1 in Figure 2 is Vds1 = Vi + Vr (Vr = n(Vo+Vd), n: Np:Ns, Vd:diode voltage drop) The Vds voltage consists of the rectied voltage of the input voltage and converted output voltage (nVo), where n is the turn ratio. The nVO is how the primary side perceives VO. Here, the rectied input voltage, Vi, is the DC voltage having twice the AC line frequency and the secondary side voltage is almost a xed DC voltage. For this reason, the Vi voltage includes twice the ripple of the AC line frequency. During the switching period, however, Vds is assumed to be most DC voltage. The turn-off time from t0 to t1 is related to the equation below. t (t0~t1) = (Coss+Cr)*Vds1/Ids_peak (Ids_peak: drain-source current at turn-off)
D2 ICO CO
IO + VO -
Lm n : 1
D1
CR
5 1N4148 + R2 C2 R3 D4 Vcb
Figure 5. Charging Circuit when the Secondary side Diode Turns On The resistor and capacitor related to this circuit should be designed carefully such that Sync voltage does not exceed Vsyth in the standby state but rises to about 8V during normal operation and that minimum voltage (Vds) switching is veried in normal operation. R1 and R2s resistances of about few tens k~100k do not present any problems in testing. A capacitor of lower than about few hundreds pF satises the above conditions. In this case, the Vds voltage can be divided mainly into two parts. It is the sum of the primary side input voltage (Vin) and nVO . The applied transformer primary side voltage n (turn ratio) times the output voltage (VO) when the diode has turned on. Therefore, if there is no leakage inductance, Vds becomes Vin+nVO .
C2
R3
(1) Vi =Vr(nVo)
In the resonance circuit, the maximum positive (+) inductor voltage (Vlm) is nVO (i.e Vr) and Vds voltage is Vin minus inductor voltage. In this case, minimum Vds is Vin-nVO . Because nVO equals Vin, the minimum is zero. The moment Vds voltage reaches the minimum value, the #5 pin voltage crosses Vsyth through the external SYNC circuit and the SPS internal MOSFET turns on again. Zero voltage switching occurs; MOSFET turn-on loss becomes zero; and noise due to the current spike at turn-on is not generated. t3 = L m C rs C rs = C oss + C r The resonance interval, Dt3(t2~t4) applicable to half of the LC resonance period is calculated by the equation above. As shown by the equation above, the resonance interval is proportional to the transformer inductance and resonance capacitor (Crs), the sum of the MOSFET output capacitor and snubber capacitor. After resonance begins, the VCC line voltage stops charging the SYNC circuit capacitor, which starts discharging through the external resistor, R#3 and SPS internal resistor, Rss. Vsync is calculated by the equation below. The SYNC equivalent circuit of this case is shown below.
R 3 + R SS -------------------------- t R3R SS C 2
----- 5 R3 R3 + ------------------------ 1 e R 3 + R SS
R3
In the SYNC circuit, the time it takes for Vsync to reduce from Vsyth_h to Vsyth (typ.6.4V) should be set to half the resonance period, calculated above. If the transformer inductor value changes or snubber capacitor value is changed, this time setting must be veried.
VGS
VDS1
VDS
ID
Vcb
VSS
ICR t0 t1 t2 t3 t4 t4 t5
VGS
VDS1
Vcb
VSS
ICR t0 t1 t2 t3 t4 t4 t5
D2 + ICO CO
IO + VO -
VLm + Vi -
Lm n : 1
IDS + VDS
ID1
ICR
D1
CR
10
11
D2 + ICO CO
IO + VO -
VLm + Vi -
Lm n : 1
IDS + VDS
ID1
ICR
D1
CR
MOSFETDrain current vs ac line voltage MOSFET drain current ID (A) 3.5 3 2.5 2 1.5 1 0.5 0 80 130 180 230 280 ac line voltage Vac (V) ID
Swiching frequency vs line voltage 80 Switching frequency kHz 70 60 50 40 30 20 10 0 80 130 180 230 280 Freq
12
Temprature vs ac line voltage 60 Temprature (degree) 50 40 30 20 10 0 80 130 180 230 280 ac line voltage Vac (V) Ttrans: transformer temperature Tsps: SPS case temperature Ths: temperature of the heatsink mounted with SPS Ttrans Tsps Ths
SPS
Vfb
1 C9
3S0680R
3 Sync 5 Vss + + 2
Vcc
13
B. Operation
1). Sync Circuit Charging (Figure 15.) When SPS turns off and the current ybacks to the secondary side, C1 charges to the Zener voltage of 7.5V through R1 as D1, connected to the Vcc winding, turns on. The charging time is a function of R1, R2 and C1.(FIG.15) 2). Sync Circuit Discharge (Figure 16.) Even though the discharge path is through both R2 and R3 (as shown in the diagram), most of the current ows through R3 if C1's voltage is above 5.6V. (R2>>R3) C1 and R3 determines the timing to detect the minimum Vds voltage in the KS3S series application. An appropriate R2 value has been set to execute Soft Start and Burst Mode Operations. The SPS, equipped with the feedback offset (stops the switching when feedback pin voltage becomes lower than about 0.3V and makes the Burst Mode Operation possible), stops the switching when the feedback level is low as it is in the Stand-By Mode. In this case, C1 and R2 are in such a way as to make the Sync Pin voltage fall to about 0V. The SPS switching stops until the output voltage falls to certain value and, then, executes soft start (i.e., the Burst Mode Operation) again.Depending on feedback dynamics and output load, the cycle of this operation can change.
Rev C, November 1999
14
SYNC PIN R1 R3
R2 7.5V C1 5.6V
Figure 16. Sync Circuit Discharging The Sync timing can be truned by appropriately controlling C1 and R2//R3 to eliminate R3 and 5.6V Zener, but this requires using within -1% staturated devices, which happen to be inappropriate for production.
C. Parameters Setting
Devices cannot be set simply through calculations. Though most are set through testing, the values can be set easily by following the steps, below. R2 is set experimentally to about 600~800 but inversely proportional to the Stand-By Load. R1 is increased usually to an appropriate value such that the device is int destroyed at output short or abnormal conditions. However, it is set to match the winding ratio in order to clamp the sync pin voltage to 7.5V near the end of yback. As C1 becomes larger, the sync timing error, from the deviation of the IC internal sync reference, increases. If C1 becomes smaller, the sync pin voltage becomes less than the feedback pin voltage in normal operation mode due to the lowering switching frequency from the load increase and all this can cause a shutdown. An appropriate R3 should be set according to Lm and snubber capacitor to tune the sync timing.
15
R6
SPS
Vfb
1 C9
D6 C12
+ C13
3S0680RF
3 Sync 5 Vss R1 C2 R3 ZD2 ZD1 D4 2 C11 BEAD1 D5 C8 C7 R2 + +
Vcc D2 R4
R5
Vx + C4 VR1 D3 R9 +
C10
R8
Q1
C6
R12
16
12
11
10
2; 31T (0.5 ) PRIMARY INDUCTANCE: LP=600uH (NP1+NP2) 10% Core: FERRITE Core EER3543 (SAM-HWA CO.LTD) 3; 4; 5; 6;
9 10 (NS2) 3 1 (NP2)
11 (NS3) 7 (NP3)
17
PART LIST
Part R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 VR1 C1 C2 C3 Value 33 120 (1W) 680 28k (1W) 28k (1W) NTC (4.9) 1.6k 300k short 1k 210k (1%) 4.9k(1%) 20k 224 (250V) (b) 683 (50V) (c) 223 (50V) (f): D2 D3 IN4004 IN4937 Part C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 Value 47uF (50V) (e) 220uF (400V) (e) 220pF (25V) (f) 1000uF (25V) (e) 1000uF (25V) (e) 222 (800V) (f) 102 (100V) (f) 561 (2kV) (f) 47uF (200V) (e) 100uF (200V) (e) 561 (kV) (f) OPT Q1 F1 T2 ZD1 ZD2 PC817 KA431AZ LINE FILTER (6mH) on/off switch (5A, 270V) 7.5V 5.6V Part D4 D5 D6 BRIDGE DIODE FUSE BEAD1 BEAD2 Value 1N4148 1R5GU41 RU20A D2SB (270V, 4A) 4A, 250Vac 2uH 100uH (1A)
18
References
[1] Transformer and Inductor Design Handbook, 2nd Edition, Colonel Wm. T. McLyman, Marcel Dekker, Inc., 1988. [2] Filter Inductor and Flyback Transformer Design for Switching Power Supplies, Lloyd H. Dixon, Jr., Unitrode Switching Regulated Power Supply Design Seminar Manual, Unitrode Corporation. 1988. [3] Flyback converter design using SPS, S.T.IM, SPS Application note, Fairchild Electronics
Author
Jeong-Yul Yun is an application engineer in Power Device Division, Fairchild Electronics Co., LTD. Tel. 82-32-680-1275 Fax. 82-32-680-1317 E-mail. yunhuh@fairchildsemi.co.kr
19
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx CoolFET CROSSVOLT E2CMOSTM FACT FACT Quiet Series FAST FASTr GTO HiSeC
DISCLAIMER
ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6 SuperSOT-8
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.