Discrete IGBTs

PRODUCT GUIDE

Features and Structure

IGBT: Insulated Gate Bipolar Transistor
q MOSFET-like high input impedance characteristics enable voltage drive q With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require low-saturation voltage, high-withstanding voltage and high current q Low carrier accumulation, excellent frequency and switching characteristics, suitable for use in highcurrent amplification

s Features
Rated at 1500 V and 80 A, Toshiba discrete IGBTs are excellent as power converters in such diverse applications as motor drives, uninterruptible power supply (UPS) units and induction heaters. Some features of Toshiba IGBTs are: (1) High switching speed (2) Low-saturation voltage (3) Built-in diode with optimal characteristics (4) High input impedance characteristics enable voltage drive (5) A variety of package types is available

s Construction
Basic structure (planar N-channel) consists of four layers (PNPN), as shown in the following figure. Low-saturation voltage is achieved by using the PNP transistor to modulate conductivity. Unlike a MOSFET, a four-layer transistor does not incorporate a reverse-conducting diode, since the P-layer forms the collector electrode.

Structure
Collector
N+

Equivalent Circuit
Emitter Electrode Gate
P N
N+

N+

N+

P+

Gate Emitter

P+

Collector IMOS

Collector

IIGBT

Collector RN- (MOD) RN- (MOD)

IT

B O N D IN G

PA D

IN S

P+

S IL IC O N

GA TE ME TAL
N+
+

U LA

G A TE

Gate
P
+

Gate

N N+ P+

P+ P+

P O LY

N+ N+ N+

P+

N+

P+

N+ N+ P
Co lle ct

M or

ET

AL

Emitter

Emitter

2.

IGBT Engineering Advances

Gate Process Generation Plane 2.5th generation 3rd generation
Emitter N+ P+ Gate

Power MOSFETs have long provided both high-speed and high-input impedance. However, various disadvantages such as increased resistance with increased breakdown voltage, as well as difficulties handling high breakdown voltages and high currents, are also associated with MOSFETs. The cross-section of the IGBT on the previous page shows how IGBT resistance is reduced by injecting holes + into the N layer from the P substrate collector to change the conductivity. Toshiba have miniaturized unit cells and optimized wafers to decrease VCE(sat) switching loss. The following data demonstrates the progress made thus far: 2.5th-generation IGBTs (VCE(sat) = 2.5 V Type)

Trench (4th generation)

Emitter N+ P+ NN+ P+ Gate

Structure

NN+ P+ Collector

Collector

VCE(sat)(@600 V) Cell Size ~900 V 1200 V

2.5 V typ. 1.00 1.00

2.1 V typ. 0.43 0.75

(1.6 V typ.) 0.06

Trade-Off Characteristics Evolution (VCES = 900 V type)

3.4 3.2 3 2.8
VCE (sat) (V)

2.5th Generation(GT60M104)

100

Changes in Chip Size

3rd-generation IGBTs (VCE(sat) = 2.3 V Type) Trench IGBTs (VCE(sat) = 2.1 V Type) In addition to wafer optimization, Toshiba are applying trench gater technology and developing improved lifetime control to optimize the VCE(sat) versus switching speed trade-off.

3rd Generation(GT60M301)
2.6

75
2.4 2.2 2 1.8 0.12

4th Generation(GT60M303)

35

0.2

0.28

0.36 tf (s)

0.44

0.52

Discrete IGBT development trends

1200 V 900 V 600 V
(1) Third generation (standard): low VCE(sat) and high ruggedness due to optimized carrier injection and reduced wafer thickness

(1) Soft switching: reduced trade-off between VCE(sat) and tf due to adoption of trench gate

(1) Third generation (standard): low VCE(sat) and high ruggedness due to miniaturization (up to 20 kHz). (2) Fast switching (FS): trench gate and carrier injection optimization (up to 50 kHz) (3) Ultra fast switching (UFS): trench gate, new wafer and new lifetime control (up to 150 kHz) (4) Soft switching: reduced trade-off between VCE(sat) and tf due to adoption of trench gate

1998
4

2000

2002

Discrete IGBT Line-up

SOP-8 Withstanding IGBT Current Rating Voltage Ic(A)@Tc = 25C VCES(V) @Tc = 25C DC Strobe flash One-shot flash 400 DP
straight formed leads leads

TO-220NIS TO-220FL TO-220SM TO-220AB TO-3P(N) TO-3P(IS) TO-3P(SM) TO-3P(LH)

Applications and Features

Resonance switching Soft switching

400 600

Soft switching series 900

40 50 30 50 60 80 15 40 60 60 40 5 10 15 20 30 50

Pulse 150 GT8G131 GT5G102 130 GT5G103 130 GT8G103 150 GT8G121 150 170 150 100 100 100 100 120 160 30 80 120 120 80 10 20 30 40 60 100 20 30 50 10 20 30 40 60 100 30 60 -60 GT5J121 GT5J321 GT10J321 GT15J321 GT20J321 GT5J301 GT10J303 GT15J301

GT25G101 GT25G101 GT25G102 GT25G102 GT40G121 GT50G321 GT30J322 GT50J322 GT60J321 GT60J322 GT80J101A GT15M321 GT40M101 GT60M302 GT60M303 GT60N321 GT40T301 GT40T102 GT5J311 GT10J312 GT15J311 GT10J301 GT20J301 GT20J101 GT30J301 GT30J101 GT10J311 GT20J311 GT30J311 GT50J301 GT50J102 GT10Q301 GT10Q101 GT15Q301 GT15Q102

1000 1500 General-purpose motors General-purpose inverters Hard switching Operating frequencies up to 20 kHz High rugged products 600

1200

10 15 25

GT15Q311 GT25Q301 GT25Q102

General-purpose inverters Fast switching Hard switching Operating frequencies up to 50 kHz FS series General-purpose inverters for low-VCE(sat) products Audio amplifiers

600

5 10 15 20 30 50

GT30J324 GT30J121 GT50J325 GT50J121 GT15J331 GT20D101 GT20D102

600 250 -250

15 20 -20

Product Number Format

(Example)

GT 60 M 3 03 A
Version Type number 1: N-channel 2: P-channel 3: N-channel with built-in freewheel diode

Table 1
Mark C D E F G H J K L Voltage (V) 150 200 250 300 400 500 600 700 800 Mark M N P Q R S T U V Voltage (V) 900 1000 1100 1200 1300 1400 1500 1600 1700

Withstand voltage rating (see Table 1) Collector current rating (DC) Discrete IGBT

Characteristics
1. Industrial Inverters
The addition of the fast switching (FS) series to the third-generation devices (high ruggedness) allows the construction of more efficient electronic equipment.

General-Purpose Inverters

Inverter Air Conditioners

Inverter Washing Maschines

UPS

PL Rectifier circuit Input CB Control Inverter

PL Output

Characteristics
As shown below, third-generation IGBT is low-loss and low-noise when it use for inverter applications because of high switching speed, Low-saturation voltage and high-efficiency diodes. (comparision with Toshiba MOSFET) Low-saturation voltage with minimal temperature dependence Superior reverse-recovery characteristics due to built-in diode with optimal characteristics

IC - VCE temperature characteristics

50

Turn-on waveform
VCE

GT50J301
40
Collector Current IC (A)
0V

MOSFET

30

MOSFET
@VGE = 15 V

20 GT50J301: Tj = 25C Tj = 125C MOSFET(500V/50A): Tch = 25C Tch = 125C 0 2 4 6 8 Collector - Emitter Voltage VCE (V) 10
IC @ Tj = 125C VCC = 300 V VGE = + 15 V GT50J301 - 5V dIC/dtr 300 A/s (@50 A) t : 0.1 s/div, VCE : 100 V / div IC : 10 A / div

10

0A

Simulation data of inverter application

Power loss vs. frequency characteristics

80 GT50J301: Tj = 25C Tj = 125C MOSFET (500 V / 50 A) : Tch = 25C Tch = 125C @fo = 50 Hz Po = 7.5 kW

60

Loss (W/Tr)

GT50J301 40 MOSFET

20

12 Carrier Frequency fC (kHz)

16

20

24

Fast switching IGBTs

With a design geared to high-speed operation, fast switching IGBTs reduce switching loss (Eon + Eoff) by 30% compared to high-rugged-products (according to Toshibas comparative tests).

Typical waveforms

GT20J321(FS)
VGE

GT20J301(3rd generation) Eon = 0.6 mJ Eoff = 0.47 mJ

VGE VCE IC LOSS IC

Ta = 25C

Eon = 0.95 mJ Eoff = 0.56 mJ

VCE IC LOSS IC

VGE

Tc = 125C

VCE IC LOSS

Eon = 0.9 mJ Eoff = 0.54 mJ

IC IC

VGE VCE IC LOSS

Eon = 1.1 mJ Eoff = 1.0 mJ

(LOSS: 0.5 mJ/div) (VCE: 50 V/div, IC: 5 A/div, VGE: 10 V/div, LOSS: 0.2 mJ/div, t: 2 s/div)

Reduced switching loss of fast switching products in comparison with high rugged products IC = 20 A, VGE = 15 V, RG = 33 , TC = 125C with inductive load VCC = 300 V

Turn-on loss

0.

J .9 m

mJ 1.1

Fast switching product

High-rugged product

GT20J321
Turn-off loss

GT20J301

mJ 0.54

mJ 1.0

Fast switching product

High-rugged product

GT20J321
8

GT20J301

Characteristics
High-rugged products with 600-V and 1200-V withstanding voltages (third generation)
With built-in diode
Package Product No. GT5J301 GT10J303 GT15J301 GT5J311 GT10J312 GT15J311 GT10J301 GT20J301 GT30J301 GT10Q301 GT15Q301 GT10J311 GT20J311 GT30J311 GT15Q311 GT50J301 GT25Q301 VCES (V) max 600 IC (A) DC max 5 10 15 5 10 15 10 20 30 10 15 10 20 30 15 50 25 PC (W) VCE(sat) (V) max typ. 2.1 28 2.1 30 2.1 35 2.1 45 2.1 60 2.1 70 2.1 90 2.1 130 2.1 155 2.1 140 2.1 170 2.1 80 2.1 120 2.1 145 2.1 160 2.1 200 2.1 200 tr (ns) typ. 0.10 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.07 0.05 0.12 0.12 0.12 0.05 0.12 0.10 tf (ns) typ. 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.16 0.16 0.15 0.15 0.15 0.16 0.15 0.16 VF (V) max 1.8 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 3.0 3.0 2.0 2.0 2.0 3.0 3.5 3.0 trr (ns) Remarks max 200 200 200 200 200 200 200 200 200 350 350 200 200 200 350 200 350

TO-220NIS

TO-220SM

600

600

TO-3P(N)

1200

TO-3P(SM)

600 1200 600 1200

TO-3P(LH)

Without built-in diode

Package Product No. GT20J101 GT30J101 GT10Q101 GT15Q102 GT50J102 GT25Q102 VCES (V) max 600 1200 600 1200 IC (A) DC max 20 30 10 15 50 25 PC (W) max 130 155 140 170 200 200 VCE(sat) (V) typ. 2.1 2.1 2.1 2.1 2.1 2.1 tr (ns) typ. 0.12 0.12 0.07 0.05 0.12 0.10 tf (ns) typ. 0.15 0.15 0.16 0.16 0.15 0.16 Remarks

TO-3P(N)

TO-3P(LH)

Fast switching (FS) series with 600-V withstanding voltage (fourth generation)
With built-in diode
Package Product No. GT5J321 GT10J321 GT15J321 GT20J321 GT30J324 GT50J325 VCES (V) max IC (A) DC max 5 10 15 600 20 30 50 PC (W) VCE(sat) (V) max typ. 2.0 28 2.0 29 1.9 30 2.0 40 2.0 155 2.0 200 tr (ns) typ. 0.03 0.03 0.04 0.04 0.05 0.07 tf (ns) typ. 0.05 0.03 0.03 0.04 0.05 0.05 VF (V) max 2.0 2.0 2.0 2.0 3.0 3.0 trr (ns) Remarks max 200 200 200 200 150 150

TO-220NIS

TO-3P(N) TO-3P(LH)

Without built-in diode

Package DP TO-3P(N) TO-3P(LH) Product No. GT5J121 GT30J121 GT50J121 VCES (V) max 600 IC (A) DC max 5 30 50 PC (W) max 40 155 200 VCE(sat) (V) typ. 2.0 2.0 2.0 tr (ns) typ. 0.03 0.05 0.07 tf (ns) typ. 0.05 0.05 0.05 Remarks

Characteristics
2. Microwave Ovens, Rice Cookers and Induction Heaters
Soft-switching circuits (current and voltage resonance type) that exhibit low switching loss are used in applications such as induction heaters (IHs) and IH rice cookers and microwave ovens. Toshiba offers a line of IGBTs with optimally low VCE(sat) and high switching speed which are especially suited to soft-switching circuits.

Microwave Ovens

IH Rice Cookers

Induction Heaters

AC Input Voltage Valtage Resonance 100 V ~ 120 V

Circuit Waveform

IGBT Rating VCES = 900 V ~ 1000 V IC = 15 A ~ 60 A

IC

IC VCE VCE

VCES = 1500 V IC = 40 A

200 V ~ 240 V

Current Resonance

Waveform VCES = 400 V ~ 600 V IC = 30 A ~ 80 A

IC IC VCE VCE

10

Characteristics
IGBTs and Diodes for Voltage Resonance Circuits (with soft switching)
IGBT
AC Input Voltage Product No. GT15M321 GT40M101 100 V~120 V GT60M302 GT60M303 GT60N321 200 V~240 V GT40T102 GT40T301 VCES / IC 900 V / 15 A 900 V / 40 A 900 V / 60 A 900 V / 60 A 1000 V / 60 A 1500 V / 40 A 1500 V / 40 A FRD tf (s) VCE (sat) max max 0.4 0.4 0.37 0.4 0.4 0.4 0.4 2.5 3.4 3.3 2.7 2.8 5.0 5.0 (V) VGE / IC 15 V / 15 A 15 V / 40 A 15 V / 60 A 15 V / 60 A 15 V / 60 A 15 V / 40 A 15 V / 40 A Package TO-3P (IS) TO-3P (IS) TO-3P (LH) TO-3P (LH) TO-3P (LH) TO-3P (LH) TO-3P (LH)
1000-V withstanding voltage 1500-V withstanding voltage 1500-V withstanding voltage

Remarks
For ultra-low capacitance For Low capacitance

High-Speed Rectifiers (FRDs)

AC Input Voltage 100 V~120 V 200 V~240 V 100 V~240 V Product No. S5J12 S5J25 S5J53 S5783F VRRM / IFSM 900 V / 120 A 1500 V / 120 A 1500 V / 120 A 900 V / 250 A Cj (pF) typ. 30 75 75 60 trr (s) max 3.0 3.0 2.0 3.5 VFM max 2.0 2.5 2.5 1.6 (V) IF 15 A 30 A 30 A 60 A Package TO-220NIS TO-3P TO-3P (N) (IS) TO-220NIS Remarks

IGBTs for Current Resonance Circuits (with soft switching)

IGBT
AC Input Voltage Product No. GT40G121 GT50G321 GT80J101A 100 V~240 V GT50J102 GT50J301 GT50J322 GT30J322 VCES / IC 400 V / 40 A 400 V / 50 A 600 V / 80 A 600 V / 50 A 600 V / 50 A 600 V / 50 A 600 V / 30 A FRD tf (s) VCE (sat) max max 0.40 0.40 0.40 0.30 0.30 0.40 0.40 2.5 2.5 3.0 2.7 2.7 2.8 2.8 (V) VGE / IC 15 V / 60 A 15 V / 60 A 15 V / 80 A 15 V / 50 A 15 V / 50 A 15 V / 50 A 15 V / 50 A Package TO-220AB TO-3P (LH) TO-3P (LH) TO-3P (LH) TO-3P (LH) TO-3P (LH) TO-3P (IS)
Isolated package

Remarks
Compact package 400-V withstanding voltage

11

Characteristics
3. Strobes
Thyristors previously used in strobe control circuits are today increasingly being replaced by IGBTs which have the following advantages. As a voltage-controlled device, the IGBT requires few drive circuit components. The small circuits possible with IGBTs fit compactly into small camera bodies. Strobe flash IGBTs are capable of switching large currents.

Single-Lens Reflex Camera

Compact Camera, DSC

Example of strobe flash circuit

D/D Conv. Diode

Battery Constant voltage circuit

Xe Lamp

Diode Trigger SCR Trigger signal Amp circuit IGBT

Regulator Controller

IGBT drive signal

NPN + PNP transistor N-ch + P-ch MOSFET

12

Characteristics
4-V to 4.5 V Gate Drive Series
The IGBT can be operated using a 4 ~ 45-V gate drive voltage. A gate drive power supply can be used as the common 5-V internal power supply in a camera, enabling the power supply circuitry to be simplified. To protect against insulator layer of the gates, zener diodes are included between the gate and emitter.

Example of IGBT gate drive circuit

1.2k P-ch 5-V power supply

SSM6L05FU IGBT GT8G131 GT8G121 GT8G103 GT5G103 N-ch 20k

470

1.2k 2SC4666 470 3V 0

Product No. GT5G103 GT8G103 GT8G121 GT8G131

VCES / ICP 400 V / 130 A 400 V / 150 A 400 V / 150 A 400 V / 150 A

VCE (sat) max 8 8 7 7

(V) VGE / IC 4.5 V / 130 A 4.5 V / 150 A 4.0 V / 150 A 4.0 V / 150 A

PC (W) @Tc = 25C 20 20 20 1.1(@Ta=25C)

Package DP DP DP SOP-8

Remarks

4-V gate drive

12-V Gate Drive Series

Product No. GT5G102 GT25G102 VCES / ICP 400 V / 130 A 400 V / 150 A VCE (sat) max 8 8 (V) VGE / IC 12 V / 130 A 12 V / 150 A PC (W) @Tc = 25C 20 75 Package DP TO-220 (FL) Remarks

20-V Gate Drive Series

Product No. GT25G101 VCES / ICP 400V / 170 A VCE (sat) max 8 (V) VGE / IC 20V / 170 A PC (W) @Tc = 25C 60 Package TO-220 (FL) Remarks

13

Package Dimensions
Unit: mm

SOP-8
8 5
6.0 0.3 4.4 0.2

DP (straight)
6.8 max 5.2 0.2
2.0 max

DP (lead bend)
2.0 max

TO-220NIS
10 0.3 3.2 0.2
3.9 3.0

0.6 max

6.8 max 5.2 0.2

2.7 0.2

0.6 max

5.5 0.2

1.5 0.2

1 0.595 TYP 1.27

0.25 M
12.0 max

2.5

0.15 0.05

+ 0.1

5.5 max
0.1 0.05 1.5 0.2

0.6 0.15

0.6 max

0.6 0.15 2.3 2.3

5.0 0.2

0.6 max 1.6 0.2

0.75 0.15 2.54 0.25

0.75 0.15

2.5 max

0.1

1, 2, 3. 4.

Emitter Gate

1. Gate 2. Collector 3. Emitter

0.1 0.1

1.1 0.2 2.5 max

1. Gate 2. Collector 3. Emitter

5, 6, 7, 8. Collector

TO-220AB
10.3 max
3.0

TO-220FL
1.32

TO-220SM
1.32
2.0

TO-3P (N)
15.9 max 3.2 0.2
1.0 2.0 2.8
1 2 3

3.6 0.2

10.3 max

10.3 max 1.32

2.5 max

9.1 10.6 max

9.1 10.6 max

6.7 max

0.1
3 0.2 1.5

12.6 min

1.5

2.5 max

1.3 0.76 2.54 0.25

12.6 min

0.76 2.54 2.54

4.7 max

2.6 0.5

0.6

1.6 max 0.76

2.0 0.3 + 0.3 1.0 0.25 5.45 0.2

1.8 max + 0.3 0.6 0.1

2.54 0.25
4.7 max

2.54 0.25
0.5

2.54 0.25
4.7 max 0.5 2.6

5.45 0.2
4.8 max
1. Gate 2. Collector 3. Emitter

3
2.6

1 2 3

1
1. Gate 2. Collector 3. Emitter

3
1. Gate 2. Collector 3. Emitter 1. Gate 2. Collector 3. Emitter

TO-3P (SM)
15.9 max 11.0
15.3 max

TO-3P (IS)
15.8 0.5 3.6 0.2
5.5 21.0 0.5

TO-3P (L)
3.5
20.5 max 3.3 0.2
6.0 26.0 0.5

TO-3P (LH)
20.5 max 3.3 0.2
6.0 2.50 1.5 2.0 11.0 26.0 0.5 20.0 0.6
1. Gate 2. Collector 3. Emitter

1.5
3.6 max

4.0

13.5

15.5

2.50

0.1
3.0

2.0 11.0

1.5

4.0

20.5 0.5

9.0 20.0 0.3

15.7 max

3.3 max

4.5

4.5 0.2

1 2 3

+ 0.1

2.6

0.5 0.2

1.1 0.2

2.3 2.3

2.54 0.25

13.0 min

0.95 max

0.6 0.15 0.95 max

0.9

0.4 0.1

5.5 0.2

5.6 max

1.1

1.1

15 0.3

1. Gate 2. Collector 3. Emitter

0.3 4.5 0.2

1.2

0.6

1.5

2.0 5.45 5.45 1 2 3

2.0 1.0 0.15

+ 0.25

2.5 3.0 + 2.5 1.0 0.25 5.45 0.15

+ 0.25 0.6 0.10 2.8 5.2 max

20.0 0.6

2.5 3.0 + 0.3 1.0 0.25 5.45 0.15

+ 0.25 0.6 0.10

1.5

19.4 min

5.45 0.15

5.45 0.15
1.5 2.8 5.2 max

5.0 max

5.45 0.2
0.6 0.15
+ 0.25

5.45 0.2
1.0 5.0 0.3

3.4

3.15 0.1

+ 0.2

1. Gate 2. Collector 3. Emitter

1. Gate 2. Collector 3. Emitter

1. Gate 2. Collector 3. Emitter

14

2.0

Final-phase and Discontinued Products

The following products are in stock but are being phased out of production. Recommended equivalent products which can be used in their place are shown. However, the characteristics of a recommended equivalent product may not be exactly the same as those of the finalphase-production or discontinued product. Before using a recommended equivalent product, please check it is suitable for use under the intended operating conditions.
Final-Phase-Production or Discontinued Product MG60M1AL1 Soft switching Resonance switching MG30T1AL1 GT40M301 GT40T101 Application GT50M101 GT50L101 GT50Q101 GT50S101 GT50T101 GT60M101 GT60M102 GT60M103 GT40M104 GT60M105 GT60M305 GT60J101 GT80J101 General-purpose motors General-purpose inverters GT8J101 GT8J102 GT8N101 GT8Q101 GT8Q102 GT15J101 GT15J102 GT15J103 GT15N101 GT15Q101 GT25H101 GT25J101 GT25J102 GT25Q101 GT50J101 GT5G101 GT8G101 GT8G102 GT10G101 GT10G102 GT15G101 GT20G101 GT20G102 GT50G101 GT50G102 GT75G101 Maximum Ratings VCES (V) IC (A) DC 60 900 30 1500 40 900 40 1500 900 800 1200 1400 1500 900 900 900 900 900 900 600 600 Package IH IH TO-3P(LH) TO-3P(LH) Recommended Equivalent Product GT60M303 GT40T301 GT60M303 GT40T301 GT40T102 GT60M303 GT60M303 GT40T301 GT40T102 GT40T301 GT40T102 GT40T301 GT40T102 GT60M302 GT60M302 GT60M302 GT60M302 GT60M302 GT60M303 GT50J102 GT80J101A GT60J321 GT10J303 GT10J312 GT10Q101 GT10Q101 GT15Q311 GT20J101 GT15J301 GT15J311 GT15Q102 GT15Q102 GT30J101 GT30J101 GT30J101 GT25Q102 GT50J102 GT5G102 GT5G103 GT8G103 GT8G121 GT25G101 GT25G102 GT25G101 GT25G101 GT25G102 GT25G101 GT25G102 GT25G101 Maximum Ratings VCES (V) IC (A) DC 900 60 1500 40 900 60 1500 40 1500 40 900 60 900 60 1500 40 1500 40 1500 40 1500 40 1500 40 1500 40 900 60 900 60 900 60 900 60 900 60 900 60 600 50 600 80 600 60 600 10 600 10 1200 10 1200 10 1200 15 600 20 600 15 600 15 1200 15 1200 15 600 30 600 30 600 30 1200 25 600 50 400 130(pulse) 400 130(pulse) 400 150(pulse) 400 150(pulse) 400 170(pulse) 400 150(pulse) 400 170(pulse) 400 170(pulse) 400 150(pulse) 400 170(pulse) 400 150(pulse) 400 170(pulse) Package TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-3P(LH) TO-220NIS TO-220SM TO-3P(N) TO-3P(N) TO-3P(SM) TO-3P(N) TO-220NIS TO-220SM TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(LH) TO-3P(LH) DP DP DP DP TO-220FL TO-220FL TO-220FL TO-220FL TO-220FL TO-220FL TO-220FL TO-220FL

50 TO-3P(L) 50 TO-3P(L) 50 IH 50 IH 50 IH 60 60 60 60 60 60 60 80 TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(L) TO-3P(LH) TO-3P(L) TO-3P(L)

Strobe flash

8 TO-220NIS 600 8 TO-220SM 600 8 TO-3P(N) 1000 8 TO-3P(N) 1200 8 TO-220SM 1200 15 TO-3P(N) 600 15 TO-220NIS 600 15 TO-220SM 600 15 TO-3P(N) 1000 1200 15 TO-3P(N) 25 TO-3P(N) 500 25 TO-3P(N) 600 600 25 TO-3P(IS) 25 TO-3P(LH) 1200 50 TO-3P(L) 600 400 130(pulse) NPM 400 130(pulse) NPM 400 150(pulse) NPM 400 400 400 400 400 400 400 400 130(pulse) 130(pulse) 170(pulse) 130(pulse) 130(pulse) 100(pulse) 100(pulse) 150(pulse) TO-220NIS TO-220NIS TO-220NIS TO-220FL TO-220FL TO-3P(N) TO-3P(N) TO-3P(N)

15

OVERSEAS SUBSIDIARIES AND AFFILIATES

Toshiba America Electronic Components, Inc.
Headquarters-Irvine, CA
9775 Toledo Way, Irvine, CA 92618, U.S.A. Tel: (949)455-2000 Fax: (949)859-3963

010124 (D)

Toshiba Electronics Europe GmbH

Dsseldorf Head Office
Hansaallee 181, D-40549 Dsseldorf Germany Tel: (0211)5296-0 Fax: (0211)5296-400

Toshiba Electronics Asia, Ltd.

Hong Kong Head Office
Level 11, Top Glory Insurance Building, Grand Century Place, No.193, Prince Edward Road West, Mong Kok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969

Boulder, CO
3100 Arapahoe Avenue, Ste. 500, Boulder, CO 80303, U.S.A. Tel: (303)442-3801 Fax: (303)442-7216

Mnchen Office
Bro Mnchen Hofmannstrasse 52, D-81378, Mnchen, Germany Tel: (089)748595-0 Fax: (089)748595-42

Beijing Office
Rm 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791

Boynton Beach, FL(Orlando)

11924 W. Forest Hill Blvd., Ste. 22-337, Boynton Beach, FL 33414, U.S.A. Tel: (561)374-6193 Fax: (561)374-6194

Toshiba Electronics France SARL

Immeuble Robert Schumann 3 Rue de Rome, F-93561, Rosny-Sous-Bois, Cedex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15

Chengdu Office
Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road, Xinhua Avenue, Chengdu, 610017, China Tel: (028)675-1773 Fax: (028)675-1065

Toshiba Electronics Italiana S.R.L.

Centro Direzionale Colleoni Palazzo Perseo Ingr. 2-Piano 6, Via Paracelso n.12, 1-20041 Agrate Brianza Milan, Italy Tel: (039)68701 Fax:(039)6870205

Deerfield, IL(Chicago)
One Pkwy., North, Suite 500, Deerfield, IL 60015-2547, U.S.A. Tel: (847)945-1500 Fax: (847)945-1044

Shenzhen Office
Rm 3010-3012, Office Tower Shun Hing Square, Di Wang Commercial Centre, 333 ShenNan East Road, Shenzhen, 518008, China Tel: (0755)246-1582 Fax: (0755)246-1581

Duluth, GA(Atlanta)
3700 Crestwood Parkway, Ste. 460, Duluth, GA 30096, U.S.A. Tel: (770)931-3363 Fax: (770)931-7602

Toshiba Electronics Espaa, S.A.

Parque Empresarial San Fernando Edificio Europa, a 1 Planta, ES-28831 Madrid, Spain Tel: (91)660-6700 Fax:(91)660-6799

Toshiba Electronics Korea Corporation

Seoul Head Office
14/F, KEC B/D, 257-7 Yangjae-Dong, Seocho-ku, Seoul, Korea Tel: (02)589-4334 Fax: (02)589-4302

Edison, NJ
2035 Lincoln Hwy. Ste. #3000, Edison NJ 08817, U.S.A. Tel: (732)248-8070 Fax: (732)248-8030

Toshiba Electronics(UK) Limited

Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276)69-4600 Fax: (01276)69-4800

Orange County, CA
2 Venture Plaza, #500 Irvine, CA 92618, U.S.A. Tel: (949)453-0224 Fax: (949)453-0125

Toshiba Electronics Scandinavia AB

Gustavslundsvgen 12, 2nd Floor S-161 15 Bromma, Sweden Tel: (08)704-0900 Fax: (08)80-8459

Gumi Office
6/F, Ssangyong Investment Securities B/D, 56 Songjung-Dong, Gumi City Kyeongbuk, Korea Tel: (82)54-456-7613 Fax: (82)54-456-7617

Portland, OR
1700 NW 167th Place, #240, Beaverton, OR 97006, U.S.A. Tel: (503)629-0818 Fax: (503)629-0827

Toshiba Electronics Asia (Singapore) Pte. Ltd.

Singapore Head Office
438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore 119968 Tel: (278)5252 Fax: (271)5155

Raleigh, NC
5511 Capitol Center Dr., #114, Raleigh, NC 27606, U.S.A. Tel: (919)859-2800 Fax: (919)859-2898

Toshiba Technology Development (Shanghai) Co., Ltd.

23F, Shanghai Senmao International Building, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002

Richardson, TX(Dallas)
777 East Campbell Rd., Suite 650, Richardson, TX 75081, U.S.A. Tel: (972)480-0470 Fax: (972)235-4114

Bangkok Office
135 Moo 5 Bangkadi Industrial Park, Tivanon Rd., Bangkadi Amphur Muang Pathumthani, Bangkok, 12000, Thailand Tel: (02)501-1635 Fax: (02)501-1638

Tsurong Xiamen Xiangyu Trading Co., Ltd.

8N, Xiamen SEZ Bonded Goods Market Building, Xiamen, Fujian, 361006, China Tel: (0592)562-3798 Fax: (0592)562-3799

San Jose Engineering Center, CA

1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408)526-2400 Fax:(408)526-2410

Toshiba Electronics Trading (Malaysia)Sdn. Bhd.

Kuala Lumpur Head Office
Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (3)731-6311 Fax: (3)731-6307

Wakefield, MA(Boston)
401 Edgewater Place, Suite #360, Wakefield, MA 01880-6229, U.S.A. Tel: (781)224-0074 Fax: (781)224-1095

Toshiba Electronics Taiwan Corporation

Taipei Head Office
17F, Union Enterprise Plaza Bldg. 109 Min Sheng East Rd., Section 3, 0446 Taipei, Taiwan Tel: (02)514-9988 Fax: (02)514-7892

Penang Office

Toshiba Do Brasil S.A.

Electronic Components Div.
Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga 09850-550-Sao Bernardo do campo - SP Tel: (011)7689-7171 Fax: (011)7689-7189

Suite 13-1, 13th Floor, Menard Penang Garden, 42-A, Jalan Sultan Ahmad Shah, 100 50 Penang, Malaysia Tel: 4-226-8523 Fax: 4-226-8515

Kaohsiung Office
16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd., 80027, Kaohsiung, Taiwan Tel: (07)222-0826 Fax: (07)223-0046

Toshiba Electronics Philippines, Inc.

26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511

The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customers own risk.

Electronic Devices Sales & Marketing Division

1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan Tel: +81-3-3457-3405 Fax: +81-3-5444-9431

Website: http://www.semicon.toshiba.co.jp/eng/index.html

2001 TOSHIBA CORPORATION Printed in Japan