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Features
100A, 55V (See Note) Low On-Resistance, rDS(ON) = 0.008 Temperature Compensating PSPICE Model Thermal Impedance SPICE Model UIS Rating Curve Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards
Symbol
D
Ordering Information
PART NUMBER HRF3205 HRF3205S PACKAGE TO-220AB TO-263AB BRAND HRF3205 HRF3205S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE) GATE SOURCE DRAIN GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
HRF3205, HRF3205S
TC = 25oC, Unless Othewise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
55 55 20V 100 390 Figure 10 175 1.17 -55 to 175 300 260
V V V A A W W/oC oC
oC oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TC = 150oC VGS = 20V Reference to 25oC, ID = 250A ID = 59A, VGS = 10V (Figure 4) VDD = 28V, ID 59A, RL = 0.47, VGS = 10V, RGS = 2.5 MIN 55 2 VDD = 44V, ID 59A, VGS = 10V, Ig(REF) = 3mA (Figure 6) VDS = 25V, VGS = 0V, f = 1MHz (Figure 5) Measured From the Contact Modified MOSFET Screw on Tab to Center of Die Symbol Showing the Internal Devices InMeasured From the Drain ductances Lead, 6mm (0.25in) From D Package to Center of Die Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad
LD G LS S
UNITS V V A A nA V ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Breakdown Voltage Temperature Coefficient Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Source Inductance
IGSS V(BR)DSS/ TJ rDS(ON) td(ON) tr td(OFF) tf Qg Qgs Qgd CISS COSS CRSS LS
LD
4.5
nH
0.85 62 40
HRF3205, HRF3205S
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current (Note 2) SYMBOL ISD ISDM TEST CONDITIONS MOSFET Symbol Showing The Integral Reverse P-N Junction Diode
D
MIN -
TYP -
UNITS A A
Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge NOTE:
ISD = 59A (Note 4) ISD = 59A, dISD/dt = 100A/s (Note 4) ISD = 59A, dISD/dt = 100A/s (Note 4)
110 450
V ns nC
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)
100
10 0.1
20s PULSE WIDTH TC = 25oC 1.0 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V)
10 0.1
20s PULSE WIDTH TC = 175oC 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5 ID = 98A, VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
2.0
100
TJ = 25oC
1.5
10
TJ = 175oC
1.0
1 3 4.5 6
VDS = 25V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 7.5 9
0.5
0 -80
-40
200
(Continued)
20
1000
100
10s 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100s 1ms 10ms
10
TJ = 25oC
10
1 1
120
90
60
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10 0.01
100
(Continued)
THERMAL IMPEDANCE
ZJC, NORMALIZED
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101
0.01
0V
IAS 0.01
0 tAV
VDS RL
VGS
VDS
(Continued)
90%
VGS
DUT RGS
VDD 0
10% 90%
10%
50%
rev 7/25/97
LDRAIN DPLCAP 5 RLDRAIN DBREAK 11 + 17 EBREAK 18 MWEAK MMED MSTRO CIN LSOURCE 8 RSOURCE RLSOURCE S1A 12 S1B CA 13 + EGS 6 8 EDS 13 8 S2A 14 13 S2B CB + 5 8 8 22 RVTHRES 14 IT VBAT + 15 17 RBREAK 18 RVTEMP 19 7 SOURCE 3 DRAIN 2 RSLC1 51 ESLC 50
RSLC2
5 51
LDRAIN 2 5 1e-9 LGATE 1 9 2.6e-9 LSOURCE 3 7 1.1e-9 K1 LGATE LSOURCE 0.0085 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD
RLGATE
RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 3.5e-4 RGATE 9 20 0.36 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 4.5e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD
VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*550),3))} .MODEL DBODYMOD D (IS = 4.25e-12 RS = 1.8e-3 TRS1 = 2.75e-3 TRS2 = 5e-6 CJO = 5.95e-9 TT = 4e-7 M = 0.55) .MODEL DBREAKMOD D (RS = 0.0 6IKF = 30 TRS1 = -3e- 3TRS2 = 3e-6) .MODEL DPLCAPMOD D (CJO = 4.45e- 9IS = 1e-3 0N = 1 M = 0.88 VJ = 1.45) .MODEL MMEDMOD NMOS (VTO = 2.93 KP = 9.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1) .MODEL MSTROMOD NMOS (VTO = 3.23 KP = 150 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.35 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10) .MODEL RBREAKMOD RES (TC1 = 8e- 4TC2 = 4e-6) .MODEL RDRAINMOD RES (TC1 = 8e-2 TC2 = 5e-6) .MODEL RSLCMOD RES (TC1 = 1e-4 TC2 = 1.05e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-4 TC2 = 1.5e-5) .MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.2e-5) .MODEL RVTEMPMOD RES (TC1 = -2.2e- 3TC2 = -7e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 .ENDS ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -9 VOFF= -4) VON = -4 VOFF= -9) VON = 0 VOFF= 2.5) VON = 2.5 VOFF= 0)
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
+ -
RDRAIN 21 16
DBODY
RTHERM2
CTHERM2
RTHERM3
CTHERM3
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
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Rev. H4
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