CM600HA-5F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Trench Gate Design Single IGBTMOD

600 Amperes/250 Volts

D
W - DIA. (4 TYP.)

y
E

P Q
E
G

C
B

A
U - THD. (2 TYP.)

V -THD. (2 TYP.)

Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration, with a reverse connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diodes High Frequency Operation (20-25 kHz) Isolated Baseplate for Easy Heat Sinking Applications: DC Chopper Inverter UPS Forklift Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM600HA-5F is a 250V (VCES), 600 Ampere Single IGBTMOD Power Module.
Type CM Current Rating Amperes 600 VCES Volts (x 50) 5

E E

Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.25 3.66 0.63 0.30 0.69 1.14 0.79 0.94 0.31 0.24 2.44 1.89 Millimeters 108.0 93.0 16.0 7.5 17.5 29.0 20.0 24.0 7.9 6.0 62.0 48.0 Dimensions N P Q R S T U V W X Y Inches 0.39 0.39 0.51 0.33 1.42 1.02 M6 Metric M4 Metric 0.22 0.79 0.35 Millimeters 10.0 10.0 13.0 8.5 36.0 25.8 M6 M4 5.5 20.0 9.0

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-5F Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts

Absolute Maximum Ratings, Tj = 25C unless otherwise specified

Characteristics Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Maximum Mounting Torque, M6 Terminal Screws Maximum Mounting Torque, M6 Mounting Screws Maximum Mounting Torque, M4 (G, E) Terminal Screws Module Weight (Typical) Isolation Voltage, AC 1 minute, 60Hz Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd VRMS CM600HA-5F -40 to 150 -40 to 125 250 20 600 1200 600 1200 960 26 26 13 400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts

Static Electrical Characteristics, Tj = 25C unless otherwise specified

Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 10V, IC = 600A, VGE = 10V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 50V, IC = 600A, VGS = 10V IE = 600A, VGS = 0V Min. 3.0 Typ. 4.0 1.2 1.1 2200 Max. 1.0 0.5 5.0 1.7 2.0 Units mA A Volts Volts Volts nC Volts

Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified

Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol CIES COES CRES td(on) tr td(off) tF trr Qrr VCC = 50V, IC = 600A, VGE1 = VGE2 = 10V, RG = 4.2, Resistive Load IE = 600A, diE/dt = -1200A/ms IE = 600A, diE/dt = -1200A/ms VGE = 0V, VCE = 10V Test Conditions Min. Typ. 9.5 Max. 165 7.5 5.6 1000 4000 1000 500 300 Units nF nF nF ns ns ns ns ns C

Diode Reverse Recovery Time Diode Reverse Recovery Charge

Thermal and Mechanical Electrical Characteristics, Tj = 25C unless otherwise specified

Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Free Wheel Diode Per Module, Thermal Grease Applied Min. Typ. Max. 0.13 0.19 0.040 Units C/W C/W C/W

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-5F Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts

OUTPUT CHARACTERISTICS (TYPICAL)

TRANSFER CHARACTERISTICS (TYPICAL)

COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

1200
COLLECTOR CURRENT, IC, (AMPERES)

1000
VGE = 15V

1000 800 600 400 200 0

5.5

COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)

10 8 6

COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25oC

5.75

1200
VCE = 10V Tj = 25C Tj = 125C

2.0
VGE = 15V Tj = 25C Tj = 125C

1.5

800 600
5.25

1.0

400
5.0

0.5

200 0 0 1 2

4.5

4.75

0 0 2 4 6 8 10 0 200 400 600 800 1000 1200

GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)

CAPACITANCE VS. VCE (TYPICAL)

5
Tj = 25C
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, IE, (AMPERES)

104
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)

103

VGE = 0V f = 1MHz Cies

103

102

3
IC = 600A IC = 1200A

102

101
Coes Cres

IC = 240A

0 0 5 10 15
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

101 0.6

0.8

1.0

1.2

1.4

1.6

1.8

100 10-1

100

101

102

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

GATE CHARGE, VGE

104
REVERSE RECOVERY TIME, t rr, (ns)

103
VCC = 100V VGE = 10V RG = 4.2 Tj = 125C di/dt = -1200A/sec Tj = 25C

103

20
IC = 600A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

SWITCHING TIME, (ns)

15

VCC = 50V VCC = 100V

t rr

103

td(off) td(on)

102

Irr

102

10

tf

tr

102 101 102

COLLECTOR CURRENT, IC, (AMPERES)

103

101 101

102
EMITTER CURRENT, IE, (AMPERES)

101 103

0 0 1 2 3 4 5
GATE CHARGE, QG, (C)

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-5F Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.13C/W

101
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.185C/W

100

100

10-1

10-1

10-2

10-2

10-3 10-3

10-2

10-1
TIME, (s)

100

101

10-3 10-3

10-2

10-1
TIME, (s)

100

101

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