`~ivjvcbx t wc,G,we,G, 9661920-73/4980

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DEPT. OF APPLIED PHYSICS, ELECTRONICS & COMMUNICATION ENGINEERING UNIVERSITY OF DHAKA

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Ref. No............................

August 10, 2010 Dated, the.

Spectral Linewidth of Laser:

Intensity c/2nL Gain curve

Frequency

Fig.: The longitudinal modes in the laser cavity. Oscillations occur in the laser cavity over a small range of frequencies where the cavity gain is sufficient. Hence the device is not a perfectly monochromatic source but emits over a narrow spectral band. Different oscillation frequencies within the spectral band result from frequency variations (I) due to the thermal motion of atoms within the amplifying medium and (II) by atomic collisions. Hence the amplification within the laser medium results in a broadened laser transition or gain curve over a finite spectral width. Instead of producing a continuous range of wavelengths over their spectral width, lasers produce a series of lines at a number of discrete wavelengths. The resonance condition along the axis of the optical cavity exists when the optical spacing between the mirrors L is given by q L= 2n where, is the emission wavelength n is the refractive index of the amplifying medium, and q is an integer. Discrete emission of frequencies f are defined by qc f = 2nL where c is the velocity of light. Thus the different frequencies of oscillation or modes within the laser cavity are separated by a frequency interval f where c f = 2nL The mode separation in terms of the free space wavelength is given by f 2 2 = = f = f c 2nL Although a large number of modes may be generated within the laser cavity, the spectral output from the device is defined by the gain curve. Hence, laser emission will only include the longitudinal modes contained within the spectral width of the gain curve.

Lec-37, Pg-01

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DEPT. OF APPLIED PHYSICS, ELECTRONICS & COMMUNICATION ENGINEERING UNIVERSITY OF DHAKA

DHAKA-1000, BANGLADESH FAX: 880-2-8615583 E-MAIL: APECE@YAHOO.COM

Ref. No............................

August 10, 2010 Dated, the.

Threshold Condition: The major losses incurred in the optical cavity are (a) absorption and scattering in the amplifying medium (b) absorption, scattering and diffraction at the mirrors, and (c) nonuseful transmission through the mirrors. To make a laser diode generate light, the optical gain must exceed the losses. When the optical gain is exactly matched by the losses, the situation is called the threshold condition. The corresponding forward current is called the threshold current. Semiconductor Lasers: Semiconductor lasers are diodes that emit coherent light by stimulated emission. They consist of a p-n junction inside a slab of semiconductor. Excitation is provided by current flow through the device. Semiconductors are materials that have electrical conductivity intermediate between the high conductivity of metals and the low conductivity of insulators. The most common semiconductor material that has been used in lasers is gallium arsenide (GaAs). Properties of Semiconductor Lasers: A few of the properties that are usually associated with GaAs lasers are (1) The small dimension of the junction in which the light is produced leads to a beam width of several degrees. (2) GaAs lasers emit radiation in the near infrared portion of the spectrum. (3) The spectral width of the radiation is typically around two or three nanometers. (4) They can be modulated easily at high frequencies by modulating the current through the junction. (5) They are efficient, small and rugged. (6) They are much less expensive than other types of lasers. Formation of p-n Junction:
p-type Depletion layer n-type Electron

Hole

- Acceptor
Donor

Potential barrier EF

- --

Fig.: The impurities and charge carriers at a p-n junction and corresponding energy band diagram. In the compound GaAs, each gallium atom has three electrons in its outermost shell and each arsenic atom has five. When a trace of an impurity element with two outer electrons, such as zinc, is added to the crystal, the result is the shortage of one electron from one of the pairs. This shortage sets up an imbalance in which there is a place in the

Lec-37, Pg-02

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Telephone : PABX : 9661920-73/4980

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DEPT. OF APPLIED PHYSICS, ELECTRONICS & COMMUNICATION ENGINEERING UNIVERSITY OF DHAKA

DHAKA-1000, BANGLADESH FAX: 880-2-8615583 E-MAIL: APECE@YAHOO.COM

Ref. No............................

August 10, 2010 Dated, the.

crystal for an electron but there is no electron available. This is commonly called a hole. This forms the so called ptype semiconductor. When a trace of an impurity element with six outer electrons, such as selenium, is added to a crystal of GaAs, it provides an additional electron which is not needed for the bonding. This electron can be free to move through the crystal. This type is called an n-type semiconductor. When p-type and n-type regions are grown side by side in a semiconductor material the result is a p-n junction. A thin depletion region or layer is formed at the junction through carrier recombination which effectively leaves it free of mobile charge carriers. This establishes a potential barrier between the p- and n-type regions which restricts the interdiffusion of majority carriers from their respective regions. The width of the depletion region and thus the magnitude of the potential barrier is dependent upon the carrier concentration in the p- and n-type regions and any external applied voltage. [Ref.: Optical Fiber Communications: Principles and Practice, John M. Senior]

Lec-37, Pg-03

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