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Vishay Semiconductors
Applications
Input- and mixer stages especially UHF-tuners.
Features
D Integrated gate protection diodes D High cross modulation performance D Low noise figure
3 4 2
94 9307 96 12647
BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
Tamb 60 C
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BF966S
Vishay Semiconductors Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, VG1S = VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF966S BF966SA BF966SB Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS VG1S(OFF) VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V
Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps Gps DGps F F Min 15 Typ 18.5 2.2 1.1 25 0.8 25 18 1.0 1.8 Max 2.6 35 1.2 Unit mS pF pF fF pF dB dB dB dB dB
VG1S = 0, VG2S = 4 V
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VG2S = 4 to 2 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz
40
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BF966S
Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified)
300 P tot Total Power Dissipation ( mW ) 250 ID Drain Current ( mA ) 200 150 100 50 0 0
96 12159
VDS= 15V
VG1S= 4V 3V 2V
1V
0V 1V 1 0 1 2 3 4 5
1.5V 1V
VG1S= 2V
VG2S= 4V 0.5V
0V 0.5V 1V 2 4 6 8 10 12 14 16
12 15 18 21 24 27 30
12765
ID Drain Current ( mA )
90 ID Drain Current ( mA ) 80 70 60 50 40 30 20 10 0 1
12763
VDS= 15V
VG2S= 6V 5V 4V 3V 2V 1V 0V 1V
5
12766
10 12 14 16 18 20
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BF966S
Vishay Semiconductors
4.0 C issg2 Gate 2 Input Capacitance ( pF ) 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 3
12767
f=1300MHz ID=5mA ID=10mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100...1300MHz ID=20mA
100MHz 0 2 4 6 8 10 12 14 16 18 20
Re (y11) ( mS )
f= 200MHz
4V 3V 2V 1V 0V 0.5V 1V
S 21
VG2S=2...3V 4 3 2 1 0 1 2 3
12772
VDS=15V f=1MHz
VG2S=4V
0 5
f=100MHz
3V Im ( y ) ( mS ) 21
10 15 20 25 30
2V 0V 5 10 15 1V 0.5V 20 25 30
35 40 8
12771
1300MHz
12
16
20
24
ID Drain Current ( mA )
Re (y21) ( mS )
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BF966S
Vishay Semiconductors
8 f=1300MHz 7 6 Im ( y ) ( mS ) 22 5 4 3 2 1 0 0
12773
ID=10mA ID=5mA 20mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100...1300MHz 1.0 1.5 2.0 2.5
100MHz 0.5
Re (y22) ( mS )
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BF966S
Vishay Semiconductors VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50 S11
j 120 j0.5 j2 150 j0.2 j5 30 1000 0 0.2 0.5 1 2 5
W
90 60
S12
100
j0.2
12 924
S21
90 120 700 400 150 1000 30 60
150
j0.2
j0.5 120
12 926
60 90
12 927
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1300MHz 400 1000 700 j0.5 j j2
180
j5 150
120
12 925
60 90
S22
j j0.5 j2
j5
700
j5
1300MHz j2 j
BF966S
Vishay Semiconductors Dimensions in mm
96 12242
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BF966S
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.