Midterm

Solutions Question 1 VS=5.0V, RL1=15.0, RL2=19.0, RW1=3.0, RW2=3.0. view eL1 as a voltage divider between rw1 and RL1||(rw2+RL2) eL1 = VS * !"#! !!!||(!"#!!!!) = 3.74 V eL2 = eL1*!!!!!"# = 3.23 V Recall that P = v2/R where V is the voltage across the resistor of interest PRW1 = (VS eL1)2/RL1 = 0.527 W PRL1 = eL12/RL1 = 0.933 W 2 PRW2 = (eL1 eL2) /RL2 = 0.0867 W PRL2 = eL22/RL2 = 0.549 W by conservation of energy. The total power consumed by the rest of the circuit is supplied by the voltage source. So Power dissipated by the voltage source is negative of the sum of the powers we just calculated. PVS = -2.098 W Question 2 The voltage across the load is measured to be v=10 V when the current through the load is measured to be i=22 A. The load is then changed and the voltage across the new load is measured to be v=22 V when the current through the load is measured to be i=17 A. Note that we can replace the black box by a thevenin equivalent circuit with a voltage source and a resistor. So with a resistive load, i=(VTHv)/RTH.
!!! !!!||(!"#!!!!)

In the first case, i1=(VTHv1)/RTH. Rearrange to get RTH=(VTHv1)/i1 In the second case,

i2=(VTHv2)/RTH. Rearrange to get RTH=(VTHv2)/i2 So (VTHv1)/i1 = (VTHv2)/i2 = RTH Solve for VTH in the equation (VTHv1)/i1 = (VTHv2)/i2 VTH = (i1v2 - i2v1)/(i1 i2)= 62.8 V For the short circuit, ISC = VTH/RTH. Recall that RTH=(VTHv1)/i1 = 2.4 ISC = i1VTH/(VTHv1) = 26.17 A Open circuit voltage is VTH = 62.8 V Question 3 The MOSFET's parameters are: VT=0.9V and K=0.018A/v2. The resistance of the load resistor RL=100. Part 1 VGS = VG VIN To stay out of cut off region, VGS > VT VG VIN > VT VG > VIN + VT VIN swings between 1V and -2V. Therefore, VG > 1 + 0.9 and VG > -2 + 0.9 VG > 1.9 and VG > -1.1 VG > 1.9 is the more constraining condition. So, To keep the MOSFET in cutoff, minimum value if VG is 1.9V Part 2 Assume VG=3.0V VOUT = VDS + VIN Take KCL at output node VOUT = VDD IDSRL substitute value for VOUT VDS + VIN = VDD IDS RL VDS = VDD IDSRL VIN in saturation, VDS VGS VT VDS VG VIN VT substitute value for VDS in previous equation VDD IDSRL VIN VG VIN VT. Cancel VIN on both sides VDD VG + IDSRL VT in saturation, IDS = K/2(VGS - VT)2 = K/2(VG VIN - VT)2 . After substituting, VDD VG + K/2(VG - VIN - VT)2RL VT Since The expression on the left has a maximum value when VIN is the lowest possible value, we

pick VIN = -2V and substitute the other values to get VDD 17.99V Part 3 Choose the operating point where the input bias voltage VIN=0 iDS = K/2(vGS - VT)2 VGS = VG VIN. Since VIN = 0, VGS = VG Remember that ids = vgs*iDS / vGS|vGS=VG iDS / vGS|vGS=VG = K(VG - VT) ids = K(VG - VT)vgs gm = K(VG VT) = 0.0378 Part 4

small signal model vgs = -vin vout = -idsRL = -(-vinRLK(VG - VT)) = vinRLK(VG - VT) vout/vin = RLK(VG - VT) = 3.78 Part 5 vin/iin = vin/-ids = vin/-K(VG - VT)vgs recall that vgs = -vin vin/iin = vin/Kvin(VG - VT) = 1/K(VG VT) = 26.46 Question 4 Part 1 By Inspection C = A + B = A + B

And the only diagram 2 is not implemented by the circuit Part 2 VS=4V, VOH=3.52V, VIH=2.08V, VIL=1.92V, VOL=1.12V. Low-level noise margin = VIL VOL = 0.8V Part 3 High-level noise margin = VOH VIH = 1.44 V Part 4 Forbidden region = VIH VIL = 0.16 V Part 5 Assume that RON=5.0k for our MOSFETS We have a voltage divider at the output and we want RPU such that the maximum output of this divider is VOL. VOL = VSRON/(RPU + RON) RPU + RON = VSRON/VOL RPU = VSRON/VOL RON = 12.857 k Part 6 Let's choose RPU=14.0k Remember that P = v2/R In order to find maximum power. We consider all possible values of inputs and pick the one that leads to highest power consumption when A = 0, B = 0

P = VS2/(RPU + RON) when A = 0, B = 1

P = VS /(RPU + (RON)) when A = 1, B = 0

P = 2VS2/(RPU + RON) when A = 1, B = 1

P = 2VS /(RPU + RON) We can see that we get maximum in the last two cases. Maximum power = 2VS2/(RPU + RON) = 1.684 mW Part 7 At the rising edge, the MOSFET preceding that stage is in off state. So the capacitor only sees a resistance of RPU.

 rise = RPUCGS = 7 * 10-10 S = 0.7 ns Part 8 At the falling edge, the MOSFET is in on state. So the capacitor sees a resistance of RPU||RON

fall = (RPU||RON)CGS = CGSRPURON/(RPU + RON) = 1.842 * 10-10 s= 0.1842 ns Question 5 The resistors both have the resistance R=8.2k. The voltage of the DC sources is V1=2.25V and V2=2.5V. The peak voltage of this waveform is 8V. Part 1 D1 and D2 will clip the voltage. So, the voltage at the "input" of D1 cannot be higher than V 1, and the voltage at the output of D2 cannot be lower than v2. Therefore, the maximum positive voltage that can appear at v is 2.25 Part 2 Similarly, the maximum negative voltage that can appear at v is -2.5V. Part 3 Maximum current through D1: When the AC voltage source is at +8V and v = 2.25V. Current through D1 is the current from the AC source minus the current going through resistor R: (V S v) / R v/R =0.00043.

Part 4 Maximum current through D2: v = -2.5 and AC voltage source is at -8V. Current through D2 plus current through the resistor R is the current flowing into the AC source. Thus, current through D 2 is current through the AC source minus current through the resistor R: (v Vs ) / R + v/R = 0.00037.