2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

October 2011

2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

Features
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

2N3904

MMBT3904
C C

PZT3904

E TO-92 EBC SOT-23

Mark:1A

E C SOT-223 B

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Ta = 25C unless otherwise noted

Parameter

Value
40 60 6.0 200 -55 to +150

Units
V V V mA C

Collector Current - Continuous Operating and Storage Junction Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

Ta = 25C unless otherwise noted

Parameter
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
2N3904 625 5.0 83.3 200 357 125 *MMBT3904 350 2.8 **PZT3904 1,000 8.0

Units
mW mW/C C/W C/W

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 1

www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

Electrical Characteristics
Symbol
OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX hFE

Ta = 25C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current DC Current Gain

Test Condition
IC = 1.0mA, IB = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 VCE = 30V, VEB = 3V VCE = 30V, VEB = 3V IC = 0.1mA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, VCE = 20V, f = 100MHz VCB = 5.0V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz IC = 100A, VCE = 5.0V, RS = 1.0k, f = 10Hz to 15.7kHz VCC = 3.0V, VBE = 0.5V IC = 10mA, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA

Min.
40 60 6.0

Max.

Units
V V V

50 50 40 70 100 60 30

nA nA

ON CHARACTERISTICS*

300

VCE(sat) VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.2 0.3 0.65 0.85 0.95

V V V V MHz

SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure 300 4.0 8.0 5.0

pF pF dB

SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time 35 35 200 50 ns ns ns ns

* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%

Ordering Information
Part Number
2N3904BU 2N3904TA 2N3904TAR 2N3904TF 2N3904TFR MMBT3904 MMBT3904_D87Z PZT3904

Marking
2N3904 2N3904 2N3904 2N3904 2N3904 1A 1A 3904

Package
TO-92 TO-92 TO-92 TO-92 TO-92 SOT-23 SOT-23 SOT-223

Packing Method
BULK AMMO AMMO TAPE REEL TAPE REEL TAPE REEL TAPE REEL TAPE REEL

Pack Qty
10000 2000 2000 2000 2000 3000 10000 2500

2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 2

www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

Typical Performance Characteristics

500 400
125 C

V CE = 5V

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain vs Collector Current

Collector-Emitter Saturation Voltage vs Collector Current

0.15

= 10
125 C

300
25 C

0.1
25 C

200 100 0 0.1

- 40 C

0.05
- 40 C

1 10 I C - COLLECTOR CURRENT (mA)

100

0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

V BE(ON) BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

1

Base-Emitter ON Voltage vs Collector Current

1 VCE = 5V 0.8
- 40 C 25 C

= 10

0.8

- 40 C 25 C

0.6
125 C

0.6
125 C

0.4

0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100

0.2 0.1

1 10 I C - COLLECTOR CURRENT (mA)

100

Collector-Cutoff Current vs Ambient Temperature

ICBO- COLLECTOR CURRENT (nA) 500
CAPACITANCE (pF) 10

Capacitance vs Reverse Bias Voltage

f = 1.0 MHz

100 10 1 0.1

VCB = 30V

5 4 3 2
C obo C ibo

25

50 75 100 125 TA - AMBIENT TEMPERATURE ( C)

150

1 0.1

1 10 REVERSE BIAS VOLTAGE (V)

100

2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 3

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2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

Typical Performance Characteristics (continued)

Noise Figure vs Frequency

12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1
A, I C = 100 A R S = 500

Noise Figure vs Source Resistance

12 NF - NOISE FIGURE (dB)
I C = 1.0 mA

I C = 1.0 mA R S = 200

V CE = 5.0V 10

A I C = 50 A R S = 1.0 k k
I C = 0.5 mA R S = 200

I C = 5.0 mA

8 6 4 2 0 0.1

A I C = 50 A

A I C = 100 A

1 10 f - FREQUENCY (kHz)

100

1 10 k R S - SOURCE RESISTANCE ((k ) )

100

Current Gain and Phase Angle vs Frequency

50 45 40 35 30 25 20 15 10 5 0 h fe
PD - POWER DISSIPATION (W)

Power Dissipation vs Ambient Temperature

0 20 40 60 80 100 120 140 160 180
1000
1

- CURRENT GAIN (dB)

SOT-223
0.75

- DEGREES

TO-92

V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz)

0.5

SOT-23
0.25

fe

25

50 75 100 TEMPERATURE (o C)

125

150

Turn-On Time vs Collector Current

500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100
Ic 10

Rise Time vs Collector Current

500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 =
Ic 10

100
T J = 125C

T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 4

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2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

Typical Performance Characteristics (continued)

Storage Time vs Collector Current

500 t S - STORAGE TIME (ns)
T J = 25C

Fall Time vs Collector Current

500 I B1 = I B2 = t f - FALL TIME (ns)
T J = 125C Ic 10

I B1 = I B2 =

Ic 10

VCC = 40V

100
T J = 125C

100
T J = 25C

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

10 5 1 10 I C - COLLECTOR CURRENT (mA) 100

Current Gain
V CE = 10 V f = 1.0 kHz T A = 25oC

Output Admittance
h oe - OUTPUT ADMITTANCE ( nhos mhos)
100 V CE = 10 V f = 1.0 kHz T A = 25oC

500

h fe - CURRENT GAIN

100

10

10 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

h re - VOLTAGE FEEDBACK RATIO (x10

100

_4

Input Impedance
(k) h ie - INPUT IMPEDANCE (k )
V CE = 10 V f = 1.0 kHz T A = 25oC

Voltage Feedback Ratio

10 7 5 4 3 2 V CE = 10 V f = 1.0 kHz T A = 25oC

10

0.1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

1 0.1

1 I C - COLLECTOR CURRENT (mA)

10

2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 5

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2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier

Test Circuits
3.0 V

300ns 300 ns

275
10.6 V

= Duty Cycle = 2%

k 10 K
0
< 4.0 pF C1 < 4.0pF < 1.0 ns < 1.0ns

- 0.5 V

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V
10 < t1 t< < 500 s 10 < 1 500 s

t1 10.9 V

275

= Duty Cycle = 2%

k 10 K
< 4.0 pF C1 < 4.0pF - 9.1 V
< 1.0 ns < 1.0ns

1N916

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 6

www.fairchildsemi.com

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Rev. I57

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