Transistor Basics - BJTs

Bob York

Bipolar Junction Transistors (BJTs)

Key points: BJTs are current-controlled devices Every BJT has a base, collector, and emitter The base current controls the collector current Thereare two types of BJTS: NPN and PNP
The use of BJTs is conceptually similar to the use of FETs with some differences in biasing and details of operation. The NPN is analogous to the N-channel FET The PNP is analogous to the P-channel FET In the forward active region the collector current varies linearly with the base current. This linear dependence simplifies bias calculations and also makes BJTs attractive for many analog circuit applications

NPN BJT
Collector Base Emitter Base

PNP BJT
Emitter

Collector

Ic, , mA
5 4 3 2

Ideal NPN CE Characteristics

Forward active region 50 A 40 A 30 A 20 A 10 A 0 A Increasing Ib

C B Ib E

Ic Vce

Forward active region:

I c Ib
beta is the current gain

NPN Common-emitter (CE) configuration

Vce, sat 0.2-0.3V

VCE
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Bob York

NPN I-V Characteristics: The Ebers-Moll Model

The physical construction of BJTs is like two PN junction diodes that are very close together The Ebers-Moll Model (right) uses dependent sources to model the physical interaction between the BE and BC diodes. One junction is always larger than the other, giving asymmetrical I-V characteristics (below)
Forward active region (BE diode forward biased, CB diode reverse biased)

NPN BJT Ic Ib vcb vce vbe

Ebers-Moll (EM) NPN Model C Ib Idc Ic

FIde

B Ie

Ide

RIdc

Ie Ic Ib

Ie

Ic

Increasing Ib

Each active region can be described by a current gain, f and r, where f >> r In the forward active region,

Reverse active region (BE diode reverse biased, CB diode forward biased)

I c f Ib

I c f Ib

I e ( f 1) I b

Ic f Ie

f f 1

In the reverse active region,

Ib

VCE

I c r Ib
Bob York

Reverse active currents are exaggerated here for clarity. Usually r<<f

I c r I b I e ( r 1) I b

I c r I e r

r 1

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NPN BJT: The Forward Active Region

Devices are designed to operate in the forward active region where: Base-emitter diode is forward biased Base-collector diode is reverse biased For silicon transistors: Ib vcb vce NPN BJT Ic Ib B Ie E
50 A 40 A 30 A 20 A 10 A Increasing Ib EM NPN Model in forward active region

C Ic=FIE

vbe 0.6-0.7 V
Ic, , mA
5 4 3 2 1

vcb 0.4 V

Vce >0.2-0.3V

vbe

I e Ib I c

Ideal NPN CE Characteristics Forward active region

I c f Ib

Simplified Model for Si NPN biasing calculations in Forward Active Region Ib B 0.7V E C Ic=f IB

0 A

Vce, sat 0.2-0.3V

Bob York

VCE

BE diode replaced by constantvoltage-drop model

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PNP BJTs
PNPs are the complementary version of NPNs, just like PMOS is the complementary version of NMOS. Polarity of currents and voltages reversed as compared with NPN. For the forward active region: Ib

PNP BJT
Ie veb vec vbc

EM PNP Model in forward active region

E Ib B

I e Ib I c

veb 0.6-0.7 V

vbc 0.4 V

Vec 0.2-0.3V

Generally PNP has smaller current gain than NPN Ic, , mA

5 4 3 2 1 Ideal PNP CE Characteristics Forward active region 50 A 40 A 30 A 20 A 10 A 0 A Increasing Ib

Ic C

Ic=FIE

Simplified Model for Si PNP biasing calculations in Forward Active Region E 0.7V Ib B Vec Ic=f IB C

I c f Ib

Vce, sat 0.2-0.3V

Bob York

EB diode replaced by constantvoltage-drop model

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Real BJTs
Real Devices depart from the idealized behavior in a number of ways. Two important ones are illustrated here Most BJTs show a significant slope in the I-V curves. This is called the Early effect. We will learn how to model this in ECE 2C. Also, the current gain is not exactly constant and varies with device current and temperature as shown below. Note increases with temperature. The current gain can also vary from device-todevice, so circuit techniques must be used to make the designs insensitive to variations in Ic, , mA
Forward active region 70 A 60 A 8 6 4 2 50 A 40 A 30 A 20 A 10 A 0 A Increasing Ib

Vce,sat

VCE

Current gain vs. collector current at different temperatures (2N3904 data sheet)

Bob York

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