Tsz Ho Chan Aditya Vassim

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Component 1 1)

Using the figure above, which was created in solidworks, the amount of sensors fitted on the Si wafer is 38 wafers. 2) Designing a pressure sensor Photolithography steps: 1. Surface preparation The wafer is initially heated to a temperature of 200-250C for 60 seconds in order to remove the moisture on the surface of the silicon wafer. Hexamethyldisilazane (HMSD) is added to the wafer surface to promote adhesion of the photoresist. 2. Photoresist application The wafer is covered with a positive photoresist, AZ3330, by spin coating. Viscous photoresist liquid solution of photoresist is added onto the wafer, after which the wafer is spun to produce a uniform thick layer. The wafer is spun at high speed of (5000- 6000rpm) for 60 seconds. 3. Soft Bake After applying AZ3330 onto the silicon wafer, the wafer is soft baked at 90C for 60s. This is done to remove the remaining solvent and to promote adhesion of resist layer to wafer. 4. Exposure

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A Hg lamp with wavelength of approximately 400nm (g- line= 435nm, h- line= 405nm, i- line= 365m) was used to transfer a pattern by exposure of the resistcoated wafer. Due to the wavelength of the illumination source, quartz and fused silica is not suitable. Therefore, borosilicate glass was chosen as the mask material because it provides the most pattern transmission over the span of the illumination wavelength. Assuming 10mW/cm^2, the exposure time was approximately 8-12 seconds. *Note* Because the process is limited to using shadow printing with contact masks, and the alignment and exposure was assumed to be perfect, so alignment was unnecessary. **Note** the masks at each level (wafer and die) were drawn and attached on a separate sheet 5. Development Soluble areas of photoresist were dissolved by developer chemical in order to show the windows and islands created through exposure (step 4). The developer chosen was AZ300MIF and the development time was approximately 30-40 seconds. *Note* development was assumed to be perfect and the accompanying graphs were drawn and attached on a separate sheet. 6. Hard bake An addition baking process was executed at approximately 90C for 60 seconds in order to evaporate remaining photoresist and improve adhesion. 7. Inspection Using optical and SEM metrology, the wafer was inspected. 8. Additive and subtractive process (detailed below) 9. Resist strip The remaining photoresist is removed from the substrate through stripping 10. Final Inspection A final inspection was conducted in order to ensure the quality of the wafer.

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*** Note*** since all processes that require photolithography (Only different masks) will follow the same procedure, the above steps will be referred when the lithography process is employed. A. In order to create the rectangular cavities on top of the pressure sensor, the photolithography process and isotropic wet etching was used, the masks were drawn and were shown on a separate sheet. To etch a 1um rectangular cavity, a 64HNO3:3NH4F:33H2O and an etch rate of 100A/s. This leads to a final substrate thickness of 0.3mm

Figure 1. Si wafer after isotropic wet etching and adding a layer of photoresist B. Using the aforementioned photolithography process and the masks shown on a separate sheet, a layer of photoresist that outlines the doping area was added. With a temperature specified at 1100C and a required doping depth of 0.001mm, the doping process time was calculated, as shown below: Since it is n- type doping, phosphorus was used during the doping process. The required doping depth is (Xdiff): (0.002mm-0.001mm)+ (0.46*0.001) = 0.00146mm Given kb = 1.38E-23 J/K, 1eV= 1.602E-19J, Ea (Phosphorus)= 3.66eV, D0(Phosphorus)= 3.85 cm^2/s, T= 1373K, Xdiff = 0.00146mm the following equation was used to find D, which will be used to find the time spent in the doping process:

After plugging in the aforementioned variables: D= 1.4047E-13

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Using D, the following equation was used to find the doping process time.

After plugging in the aforementioned variables: t= 3.7937 h The resulting wafer, shown below, will include a n+ Si layer in this cavity designated by the photoresist. After doping, the photoresist was stripped and etched off following step 8 and 9 on the photolithography process.

Figure 2. Si wafer after doping C. Next, an oxide layer was added using the dry oxidation process at 800C, the following formula was used to find the time it takes to form an oxidation layer of 0.001mm (1um)= xox. Given, A= 0.512um, B= 0.00129um^2/hr, and = 10.4 h

After plugging in the given values: t= 1161.69 h After forming an oxide layer, the photolithography process was used to create a cavity for the aluminum connect. The masks are were drawn and shown on a separate sheet. The resulting wafer is shown below.

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Figure 3. Si wafer after adding oxide layer D. After adding the oxidazing layer, the aluminum sensor would be added through thermal PVD at a rate of 0.0001mm/min. First, the photolithography process will be used again to determine the location and size of the aluminum sensor (use mask). After determining the location and the size, the photoresist was removed and the thermal PVD process was executed. Therefore, the time of it takes to deposite the aluminum sensor is calculated, as shown below: t= 0.001mm / 0.0001mm/min = 10 min

Figure 4. After adding the aluminum sensors through thermal PVD E. Finally, to add the cavity at the bottom of the substrate, anisotropic etching was used due to its geometry. Using a reference chart, 40% KOH was selected to etch the 100 Si. According to the reference chart, at 100C, the etching rate was 180 microns/ hour X = 0.3mm- 0.05mm 0.001mm = 0.249 mm= The amount of be etched away time = 0.249mm / 0.18mm/hr = 1.3833 hours= The time it needs to etch 0.249mm The final figure is shown below:

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Figure 5. Final figure of the design process 3) Assume etch rate is 20um/ hr, in order to hold a 1um tolerance to the bottom cavity, the time needed to response is: t(time to etch 1 micrometer)= 1micrometer / (20 micrometer/hour) = 0.05 hour

Also, assuming Y= height of substrate after isotropic etching= 0.3mm and I= 0.075mm, the cavity size would be: Hole Size= I-2x, where x= Y/tan(54.74) Hole Size= 0.075- 2( .2121mm)= 0.3258mm Looking at the final figure of the design process shown above, the aluminum sensor masks and the oxidation etching masks would pose the highest demand with regard to mask alignment because the oxidation cavity depends on the doping of n+Si, and the aluminum sensor mask depends on the oxide layer cavity. Therefore, if the oxidation mask was not aligned accurately, the oxidation layer would not be dimensioned correctly, which will lead to incorrect dimension of the aluminum sensor. 4) To calculate the residual stress by deposition of SiO2, the strain must be calculated, as shown below: X (strain) = ((0.7*10-6)-(2.8*10-6))*(1100-25) = -2.2575*10-3 Using the strain calculated above, the stress can be calculated, as shown below: Y (stress) = ((70*109)/(1-0.17))*(-2.2575*10-3) = -190 MPa (compressive)

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If the stress exceeded the maximum stress that the layer could support, the simplest thing to change is to change the temperature. However, changing the temperature will change the time needed to oxidize the Si, which will increase lead time, and ultimately increase cost. 5) MSDS sheets for various materials and chemical used throughout the design and manufacturing process: A. HMDS a. Potential health effects i. Using this chemical can cause severe eye and skin burns b. First aid measures i. Inhalation: remove to fresh air ii. Ingestion: DO NOT induce vomiting. Given large quantities of water, do not give anything by mouth to an unconscious person. iii. Skin contact: Wash exposed area with soap and water iv. Immediately flush eyes with plenty of water for at least 15 minutes, lifting lower and upper eyelids occasionally v. Get medical attention immediately c. Personal protection i. Ventilation system: Standard ventilation system is sufficient to keep employee exposure as low as possible ii. NIOSH approved personal respirators: for conditions of use where exposure to the substance is inevitable iii. Skin protection: Wear impervious protective clothing iv. Eye protection: Use safety goggles or a full face shield where splashing is possible. B. Potassium Hydroxide (KOH) a. Potential health effects i. Eye: Causes severe eye burns, may cause irreversible eye injury. Contact may cause ulceration of the conjunctiva and cornea. Damages may be delayed ii. Skin: Causes skin burns. May cause deep, penetrating ulcers of the skin. iii. Ingestion: Harmful if swallowed. May cause circulatory system failure. May cause perforation of the digestive tract. Causes severe digestive tract burns with abdominal pain, vomiting, and possible death. iv. Inhalation: Harmful if inhaled. Irritation may lead to chemical pneumonitis and pulmonary edema. Causes severe irritation of upper

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respiratory tract with coughing, burns, breathing difficulty, and possible coma. v. Chronic: Prolonged or repeated skin contact may cause dermatitis. Prolonged or repeated eye contact may cause conjunctivitis. b. First aid measures i. Eyes: Immediately flush eyes with plenty of water for at least 15 minutes, occasionally lifting the upper and lower eyelids. Get medical aid immediately. ii. Skin: Get medical aid immediately. Immediately flush skin with plenty of soap and water for at least 15 minutes while removing contaminated clothing and shoes. Discard contaminated clothing in a manner which limits further exposure. iii. Ingestion: Do NOT induce vomiting. If victim is conscious and alert, give 2-4 cupfuls of milk or water. Never give anything by mouth to an unconscious person. Get medical aid immediately. iv. Inhalation: Get medical aid immediately. Remove from exposure to fresh air immediately. If breathing is difficult, give oxygen. If breathing has ceased apply artificial respiration using oxygen and a suitable mechanical device such as a bag and a mask. c. Personal protection i. Using a predetermined exposure limits and adequate ventilation systems, employee exposure can be limited ii. Wear protective apparel and clothing, use respirators if needed. C. AZ3330 photoresist a. Potential health effects i. Will cause severe eye and skin irritation. If ingested, it may be harmful. High vapor concentration will cause irritation to the nose, throat and lungs. b. First aid measures i. Inhalation: remove to fresh air ii. Contact with skin: Immediately remove contaminated clothing and flush affected area thoroughly with water. Remove residue with soap and water. IF necessary, clean area with a cloth or paper towel wetted with acetone. iii. Contact with eyes: Flush affected area thoroughly for 15 minutes nd get medical help immediately D. AZ300IF developer a. Potential health effect i. Causes severe eye and skin irritation. It is toxic by skin absorption. It may also cause reproductive and birth defects

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b. First aid measures i. Inhalation: remove to fresh air ii. Contact with skin: remove contaminated clothing and wash affected area thoroughly with soap and water iii. Contact with eyes: Flush thoroughly with water for 15 minutes iv. Ingestion: Give milk to dilute stomach contents, do not give anything by mouth to an unconscious person c. Personal protection i. Wear clothing suitable to prevent skin contact, use adequate ventilation system and respirator if needed.

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Masks:

Mask to etch away the bottom part of the substrate to create a cavity

Masks for doping

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Masks for aluminum sensors

I.

Figure. IV

Masks for oxidation

Tsz Ho Chan Aditya Vassim Component 2

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1) What is the relation of micromachining to conventional machining and briefly describe two aspects of size related effects are of concern with micromachining? Micromachining uses many characteristics of conventional machining since downsizing the scale of machining does not change the general characteristics of the process to certain extend. However, when the ratio of size of the microstructure of the work material to the tool dimension used becomes small, size effects can change the whole aspect of machining. There are two aspects of size related effects of concern with micromachining, they are: homogeneous and isotropic machining, and anisotropic machining. Homogeneous and isotropic machining focuses on the size effect, which is defined as the effect due to small ratio of the depth of cut to the tool edge radius but for which the material still behaves as homogenous and isotropic. Anisotropic machining focuses on the workpiece materials. When the tool dimension or a feature to be generated is of the same order as the grain size, or when the material cannot be treated as isotropic and homogeneous, the cutting mechanism differs substantially from conventional machining. 2) Give an example of a set of micro- geometries created with micromechanical machining, describe how they were made. An example would be micro- lenses on a silicon plate. This is done by rotating a circular arc diamond cutting edge and feeding the tool along an axis perpendicular to the silicon plate. 3) Comment on micro- tooling, materials used, fabrication processes and the challenges and problems faced with small- scale tools. Over the last two decades, knowledge of the design of ultraprecision machine tools has accumulated. Several factors are important when designing micro-tools, such as thermal stability, precise spindle bearings and linear guides, and high resolution of linear and rotary motions. Using these guidelines, ultraprecision machines and tools were assembled. Various materials were tested and used to fabricate micro- tools, such as diamond, sintered alumina powder titanium, among other materials. These materials were chosen to improve wear resistance, tool life, and to accommodate the fragile properties of micro- tools such as breakage caused by chip clogging and fatigue. The focused ion beam process has been used to fabricate micro-tools. This method uses a focused beam of ions to generate features, such as cutting edge on micro- tools, and the resulting micro- tools exhibit excellent surface finish. Other fabrication processes used include electrical discharge machining and the electrodischarge grinding process. In addition, grinding is also used for fabricating micro-tools by many researchers. However, the grinding process has a limitation on tool geometry and is usable only to the micro scale (10^-6m). To improve the grinding process, ultrasonic vibration is added to the grinding process to produce high aspect ratio micro- tools. Finally, researchers have also developed a machine tool fabrication process utilizing ELID grinding technology with high surface quality. Even with sophisticated micro- tool manufacturing techniques, fabrication of micro- tools is still one of the many challenges in micromachining. Imprecise geometry and the irregularity of tools often negate the advantages of ultra precision process control, state of the art machine tools and ultra fine tuning of process parameters.

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Another issue with micro- tools is that these tools experience a different loading situation from that seen in conventional machining, and these loads and strains can cause tool breakage. In addition, chip clogging is also another issue that increases stresses and cutting force, this can also cause breakage in only a few rotations. Also, excessive stress breakage is another problem commonly associated with micro- tools. The concept of excessive stress breakage is that the cutting edge loses its sharpness and becomes dull, therefore the tool is unable to remove enough material to create satisfactory space for the central section of the shaft of the tool, causing the tool to deflect. This deflection paired with a constant feed creates an excessive stress that can cause tool failure. 4) Describe the role of cutting fluid in micromachining. In micromachining, cutting fluid has both positive and negative effects. Cutting fluid can minimize burr, improve surface quality of side walls and decrease chip adhesion. However, the temperature difference between the cutting liquid and the heat generated by the cutting tools will create errors, thus ultimately affecting the overall accuracy and precision. 5) Describe the importance of metrology in micromachining (do not include the work reviewed from other authors). Metrology is important in micromachining. For example, in material removal processes at the micro-scale, the undeformed chip thickness can be on the order of a few microns or less, and can approach nanoscale in some cases. At these length scales, the surface, subsurface and edge condition of machined features and the fundamental mechanism for chip formation are much more intimately affected by the material properties and microstructure of the workpiece material, microtopographical features such as voids, secondary phases and interstitial particulates. Characterizing the surface, subsurface, and edge condition of machined features at this fine scale, as well as tracking relevant process parameters such as material removal rate, tool contact/ cycle time, and state of tool condition are of increasing importance for monitoring. Finally, the precision and accuracy measurements of the aforementioned categories such as microtopographical features and surface conditions will directly impact the overall quality of the products.

Component 3: Part 1 a)

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6 4
Voltage (V)

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Ch1 Ch2 Ch3 Ch4

2 0 -2 -4 0

4 time (s)

10

For data set 1, Channels 2 (Slope= 0.1412) and Channels 3 ( Slope= -0.1492) are affected by the drift and offset. b)
6 Ch1 Ch2 Ch3 Ch4

4
Voltages (V)

-2 0 2 4 6 Time (s) 8 10

For data set 2, again we can see that Channels 2(slope= 0.5064) and Channels 3( slope=-0.4166) are affected by the drift and offset.

Part 2 a).

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5 4 3
Voltage (V)

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Ch1 Ch2 Ch3 Ch4

2 1 0 -1 -2 0 2 4 time (s) 6 8 10

After offsetting channels 2 and 3, we get a value of 2.0220 for channel 2 and an offset of 1.0000 for channel 3.
3 Ch1 Ch2 Ch3 Ch4

2
Voltage (V)

-1 0

4 time (s)

10

b).

6 4 2 0 -2 0 2 4 6 Time (s) 8

Voltages (V)

Ch1 Ch2 Ch3 Ch4

10

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3 2 1 0 -1 0

Voltages (V)

Ch1 Ch2 Ch3 Ch4

4 6 Time (s)

10

After offsetting it, we get a slope of -2.1120 for channel 2 and 3.1132 for channel 3

Part 3 a)
60 Force 2 50 40
Force 2 (N)

30 20 10 0 -10 0 2 4 6 Time (s) 8 10

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50 Force 3 40
Force 3 (N)

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30 20 10 0 -10 0 2 4 6 Time (s) 8 10

The correlation between the two graphs is both Force 2 and Force 3 are identical looking and have very similar slopes.

b).
60 Force 2 50 40
Force 2 (N)

30 20 10 0 -10 0 20 40 60 Position (mm) 80 100

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50 Force 3 40
Force 3 (N)

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30 20 10 0 -10 0 20 40 60 Position (mm) 80 100

c).
80 Force 2 60
Force 2 (N)

40 20 0 -20 0

4 6 Time (s)

10

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60 Force 3 50 40
Force 3 (N)

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30 20 10 0 -10 0 2 4 6 Time (s) 8 10

The correlation between the two graphs is both Force 2 and Force 3 are identical looking and have very similar slopes.

d)
80 Force 2 60
Force 2 (N)

40 20 0 -20 0

20

40 60 Position (mm)

80

100

60 Force 3 50 40
Force 3 (N)

30 20 10 0 -10 0 20 40 60 Position (mm) 80 100

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Component 4 Tsz Ho Chan: I would prefer a required text for the course, but a final project like the one we have should be sufficient. I would prefer the lecture to be taught from the blackboard. After graduation, I hope to follow the manufacture track because it is interesting to understand the process of how things are made and how it can be improved. Aditya Vissam: Yes, I would have preferred a required text and an exam over this final project. No, the PowerPoint slides were good enough as opposed to the blackboard writings. I plan on entering the cement industry by working with my dad once I graduate. The manufacturing sector has always been a field of interest to me and all those field trips to the cement plant as a kid inspired me to actually pursue Industrial Engineering.

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IE 497 Final Project

Tsz Ho Chan Aditya Vassim