FQP55N10

August 2000

QFET
FQP55N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

TM

Features
55A, 100V, RDS(on) = 0.026 @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating

D
!
"

G! G DS

! "
" "

TO-220
FQP Series
!

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQP55N10 100 55 38.9 220 25

(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

1100 55 15.5 6.0 155 1.03 -55 to +175 300

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 0.97 -62.5 Units C/W C/W C/W

2000 Fairchild Semiconductor International

Rev. A, August 2000

FQP55N10

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0.1 ------1 10 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 27.5 A VDS = 40 V, ID = 27.5 A
(Note 4)

2.0 ---

-0.021 38

4.0 0.026 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---2100 640 130 2730 830 170 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 55 A, VGS = 10 V
(Note 4, 5)

VDD = 50 V, ID = 55 A, RG = 25
(Note 4, 5)

--------

25 250 110 140 75 13 36

60 510 230 290 98 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 55 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 55 A, dIF / dt = 100 A/s
(Note 4)

------

---100 380

55 220 1.5 ---

A A V ns nC

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.55mH, IAS = 55A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2000 Fairchild Semiconductor International

Rev. A, August 2000

FQP55N10

Typical Characteristics

10

ID, Drain Current [A]

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :

10

10

175

10

25
10
0

Notes : 1. 250 Pulse Test s 2. TC = 25

-55

Notes : 1. VDS = 40V 2. 250 Pulse Test s

10 -1 10

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.12
10
2

RDS(on) [ ], Drain-Source On-Resistance

VGS = 10V

IDR , Reverse Drain Current [A]

0.09

10

0.06

VGS = 20V

10

0.03
Note : TJ = 25

175

25

Notes : 1. VGS = 0V 2. 250 Pulse Test s

0.00 0 60 120 180 240 300

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID , Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

5000

10

VDS = 50V VDS = 80V

VGS, Gate-Source Voltage [V]

4000

Capacitance [pF]

3000

Ciss Coss

Notes : 1. VGS = 0 V 2. f = 1 MHz

2000

Crss
1000

2
Note : ID = 55A

0 -1 10

0 10
0

10

10

20

30

40

50

60

70

80

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2000 Fairchild Semiconductor International

Rev. A, August 2000

FQP55N10

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Normalized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

Notes : 1. VGS = 10 V 2. ID = 27.5 A

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

60 10
3

Operation in This Area is Limited by R DS(on)

50

10

ID, Drain Current [A]

1 ms 10 ms
10
1

ID, Drain Current [A]

2

100 s

10 s
40

DC

30

20

10

Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse

o o

10

10

-1

10

10

10

0 25

50

75

100

125

150

175

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

( t) , T h e r m a l R e s p o n s e

10

D = 0 .5 0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

N o te s : 1 . Z J C ( t ) = 0 . 9 7 /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P D M * Z JC(t)

PDM t1 t2

JC

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2000 Fairchild Semiconductor International

Rev. A, August 2000

FQP55N10

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2000 Fairchild Semiconductor International

Rev. A, August 2000

FQP55N10

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2000 Fairchild Semiconductor International

Rev. A, August 2000

FQP55N10

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

2000 Fairchild Semiconductor International

Rev. A, August 2000

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. F1