Study of Magnetoresistance

Semiconductor Devices and Technology Lab Electronics Department IIT Roorkee

GROUP MEMBERS: 1) Siddharth Jindal 2) Tangirala Bhargav 3) Yogesh kapila

Study of Magnetoresistance By: Siddharth Jindal, Tangirala Bhargav and Yogesh Kapila

AimCalibrate a magnetic field sensor using magnetoresistance effect in Ge Apparatus RequiredSample(Ge: n type),Magnetoresistance set-up ,Four probe arrangement ,Electromagnet, EMU- 50, Constant Current Power Supply, DPS- 50,Digital Gauss Meter, DGM-102 TheoryMAGNETORESISTANCE SETUP: Magneto resistance is the property of a material to change the value of its electric resistance when an external magnetic field is applied to it. This effect was first discovered by William Thomson in 1956. Due to magneto resistance the drift velocity of all the carrier is not same. The Hall voltage is V = Et = |vxH| Where, v = drift velocity E = applied electric field t = thickness of the crystal H = Magnetic field

Four Probe Arrangement When the magnetic field on, Hall effect compensates the Lorentz force for carrier with the average velocity; slower carriers will be over compensated and faster one under compensated resulting in trajectories that are not along the applied field. This results in an effective decrease of the mean free path and hence an increase in resistivity.

Calculation of mobility (m-)/ = (*xB)2 where. m = Resistivity with magnetic field = Resistivity without magnetic field * = Hall mobility B = Magnetic field

* = xr where, r = scattering factor = electron mobility

Procedure: 1. Set the suitable air gap, i.e., 19 mm between the electromagnets. 2. Turn on the constant current supply, digital gauss meter and magnetoresistance set up. 3. Place the probe between electromagnet and measure the magnetic field on changing the value of current. 4. Now set up the probe current (I) = 4 mA (constant for whole set of readings) 5. Measure the voltage V for different value of currents and magnetic field, keeping probe current constant. 6. Calculate the magnetic field resistance by using the formula: R =V /I 7. R= 174.7/4= 43.675 where R is sample resistance without magnetic field. 8. Draw a graph between R/R vs Magnetic field. 9. Draw a graph between log ( R/Rx 10^-3) vs log (magnetic field x 10^-2) Here, R= Rm R Where R = sample resistance without magnetic field Rm = sample resistance with magnetic field

OBSERVATION TABLE

CURRENT(A) MAGNETIC FIELD(Gauss) VOLTAGE(mV) Rm 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 12 178 361 558 758 944 1132 1321 1536 1734 1921 2130 2310 2500 2700 2880 3070 3260

(Rm-R)/R

Log((RmR)/R) -2.15341597 -2.15341597 -2.15341597 2.112196276 2.112196276 2.074551928 2.074551928 2.007831854 1.950010021 1.898989856 -1.85333828 1.792764808 1.739614988 1.692266246 1.636230061 1.598489693 -1.56376837 1.521410052

Log(B) 1.079181246 2.250420002 2.557507202 2.746634199 2.879669206 2.974971994 3.053846427 3.120902818 3.186391216 3.239049093 3.283527365 3.328379603 3.36361198 3.397940009 3.431363764 3.459392488 3.487138375 3.5132176

144 36.3636364 0.00702399 144 36.3636364 0.00702399 144 36.3636364 0.00702399 144.1 36.3888889 0.00772331 144.1 36.3888889 0.00772331 144.2 36.4141414 0.00842264 144.2 36.4141414 0.00842264 144.4 36.4646465 0.00982128 144.6 36.5151515 0.01121993 144.8 36.5656566 0.01261857 145 36.6161616 0.01401721 145.3 36.6919192 0.01611518 145.6 36.7676768 0.01821315 145.9 36.8434343 0.02031111 146.3 36.9444444 0.0231084

146.6 37.020202 0.02520637 146.9 37.0959596 0.02730434 147.3 37.1969697 0.03010163

(Rm-R)/R vs Magnetic Field

(Rm-R)/R

0.035 0.03 0.025

(Rm-R)/R

0.02 0.015 0.01 0.005 0 0 1000 2000 3000 4000 (Rm-R)/R

Magnetic Field

Log/Log Plot
logB
0 2 -0.5 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4

log((Rm-R)/R)

-1 -1.5 -2 -2.5

Log/Log Plot

Calculation of mobility (m-)/ = (*xB)2 Where, m = Resistivity with magnetic field = Resistivity without magnetic field * = Hall mobility H = magnetic field And, * = xr Where, r= scattering factor = electron mobility General modelf(x)= a*x^2 As calculated from graph, coefficient, (with 95% confidence bounds) a=355 x 10^5 (approx.) a= ^2 = 5960 = xr (r=1.5)

= 5960 x 2/3= 3973.33 cm^2 per V per s

ResultCalculated mobility of Germanium is 3973.33 cm^2 per V per S

Conclusion Some materials undergo a change in their electrical resistance when subjected to an external magnetic field. This effect is known as magnetoresistance. This is due to the fact that the drift velocity of all charge carriers are not the same. In the presence of magnetic field, the Hall voltage compensates the Lorentz force on the charge carriers moving with average velocity.

Slower carriers will be over compensated, while faster carriers will be undercompensated. As a result of this, the carriers do not move in the direction of the applied electric field. Consequently the mean free path of the electrons decreases, resulting in greater electrical resistance. Thus, in short, we may state that As observed from the graph, the resistance of sample increases with significant increase in magnetic field Hence, we may conclude that magnetoresistance does exist in increases with increase in magnetic field.